JP2009163860A5 - - Google Patents

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Publication number
JP2009163860A5
JP2009163860A5 JP2008308750A JP2008308750A JP2009163860A5 JP 2009163860 A5 JP2009163860 A5 JP 2009163860A5 JP 2008308750 A JP2008308750 A JP 2008308750A JP 2008308750 A JP2008308750 A JP 2008308750A JP 2009163860 A5 JP2009163860 A5 JP 2009163860A5
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JP
Japan
Prior art keywords
state
circuit
antifuse
memory
writing
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Application number
JP2008308750A
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English (en)
Japanese (ja)
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JP5268600B2 (ja
JP2009163860A (ja
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Priority to JP2008308750A priority Critical patent/JP5268600B2/ja
Priority claimed from JP2008308750A external-priority patent/JP5268600B2/ja
Publication of JP2009163860A publication Critical patent/JP2009163860A/ja
Publication of JP2009163860A5 publication Critical patent/JP2009163860A5/ja
Application granted granted Critical
Publication of JP5268600B2 publication Critical patent/JP5268600B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008308750A 2007-12-14 2008-12-03 半導体装置及びメモリのデータ書き込み方法 Expired - Fee Related JP5268600B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008308750A JP5268600B2 (ja) 2007-12-14 2008-12-03 半導体装置及びメモリのデータ書き込み方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007323224 2007-12-14
JP2007323224 2007-12-14
JP2008308750A JP5268600B2 (ja) 2007-12-14 2008-12-03 半導体装置及びメモリのデータ書き込み方法

Publications (3)

Publication Number Publication Date
JP2009163860A JP2009163860A (ja) 2009-07-23
JP2009163860A5 true JP2009163860A5 (enExample) 2012-01-12
JP5268600B2 JP5268600B2 (ja) 2013-08-21

Family

ID=40753036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008308750A Expired - Fee Related JP5268600B2 (ja) 2007-12-14 2008-12-03 半導体装置及びメモリのデータ書き込み方法

Country Status (3)

Country Link
US (1) US7872934B2 (enExample)
JP (1) JP5268600B2 (enExample)
KR (1) KR101529057B1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5371400B2 (ja) * 2007-12-14 2013-12-18 株式会社半導体エネルギー研究所 メモリ及び半導体装置
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
US8520426B2 (en) * 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
JP2012256821A (ja) * 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
US10142424B2 (en) * 2013-10-16 2018-11-27 Empire Technology Development Llc Two-level cloud system migration
US11562902B2 (en) * 2020-07-19 2023-01-24 Applied Materials, Inc. Hydrogen management in plasma deposited films

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Publication number Priority date Publication date Assignee Title
JPS60117660A (ja) 1983-11-30 1985-06-25 Fujitsu Ltd 半導体記憶装置
JPH02239664A (ja) * 1989-03-13 1990-09-21 Olympus Optical Co Ltd 電気的記憶装置
US5426614A (en) * 1994-01-13 1995-06-20 Texas Instruments Incorporated Memory cell with programmable antifuse technology
JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
JP3501416B2 (ja) 1994-04-28 2004-03-02 忠弘 大見 半導体装置
JP3190800B2 (ja) * 1995-03-15 2001-07-23 甲府日本電気株式会社 転送速度切り替え機能付き非同期転送回路
JPH11273387A (ja) * 1998-03-26 1999-10-08 Sanyo Electric Co Ltd 不揮発性半導体メモリ装置
JP4316159B2 (ja) * 2001-05-24 2009-08-19 東芝メモリシステムズ株式会社 半導体記憶装置及び情報の記憶方法
US6879525B2 (en) * 2001-10-31 2005-04-12 Hewlett-Packard Development Company, L.P. Feedback write method for programmable memory
US6690597B1 (en) * 2003-04-24 2004-02-10 Hewlett-Packard Development Company, L.P. Multi-bit PROM memory cell
JP2005183557A (ja) * 2003-12-18 2005-07-07 Canon Inc 半導体集積回路とその動作方法、該回路を備えたｉｃカード
JP4515134B2 (ja) 2004-04-06 2010-07-28 成田国際空港株式会社 航空手荷物管理システム
US7224630B2 (en) * 2005-06-24 2007-05-29 Freescale Semiconductor, Inc. Antifuse circuit
JP5145217B2 (ja) * 2006-05-31 2013-02-13 ルネサスエレクトロニクス株式会社 半導体装置
US7499355B2 (en) * 2006-07-31 2009-03-03 Sandisk 3D Llc High bandwidth one time field-programmable memory
US7649798B2 (en) * 2006-08-17 2010-01-19 Broadcom Corporation Memory device using antifuses
CN101523611B (zh) * 2006-10-04 2012-07-04 株式会社半导体能源研究所 半导体器件及其制造方法
KR101481400B1 (ko) * 2006-10-24 2015-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저장 디바이스를 포함하는 반도체 디바이스와 이를 구동하기 위한 방법
KR101416876B1 (ko) * 2006-11-17 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조방법
JP4556062B2 (ja) * 2007-02-01 2010-10-06 株式会社テクナム トンネル等の高速走行洗浄方法とトンネル等の高速走行洗浄装置
US7994607B2 (en) * 2007-02-02 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5525694B2 (ja) * 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法

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