JP5263757B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5263757B2 JP5263757B2 JP2008018739A JP2008018739A JP5263757B2 JP 5263757 B2 JP5263757 B2 JP 5263757B2 JP 2008018739 A JP2008018739 A JP 2008018739A JP 2008018739 A JP2008018739 A JP 2008018739A JP 5263757 B2 JP5263757 B2 JP 5263757B2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
(実施の形態1)
(実施の形態2)
11:第1の電極
12:絶縁物
13:シリコン膜
14:ゲルマニウム膜
15:第2の電極
100a:第1のシート
100b:第2のシート
101:絶縁表面を有する基板
102:剥離層
103:絶縁層
104:ゲート絶縁膜
105:第1のゲート電極
106:第2のゲート電極
107:第1の電極
108:ソース領域
109:ドレイン領域
110:ドレイン領域
111:ソース領域
112:チャネル形成領域
113:チャネル形成領域
114:層間絶縁膜
115a:シリコン膜
115b:ゲルマニウム膜
116:ソース電極
117:ドレイン電極
118:ソース電極
119:第3の電極
120:第2の電極
121:接続電極
122:絶縁膜
123:第4の電極
124:金属層
125:アンテナ
302A:メモリ部及び駆動回路
302B:メモリ部及び駆動回路
302C:メモリ部及び駆動回路
302D:メモリ部及び駆動回路
302E:メモリ部及び駆動回路
303A:アンテナ
303B:アンテナ
303C:アンテナ
303D:アンテナ
303E:アンテナ
501:基板
502:金属層
503:第1絶縁膜
504〜508:ゲート電極
509:第1の電極
510:サイドウォール
511:サイドウォール
512:ゲート絶縁層
513:絶縁層
514:ソース領域又はドレイン領域
515:ソース領域又はドレイン領域
516:チャネル形成領域
517:ソース領域又はドレイン領域
518:ソース領域又はドレイン領域
519:LDD領域
520:LDD領域
521:チャネル形成領域
522:第4絶縁膜
523:第5絶縁膜
524a:シリコン層
524b:ゲルマニウム層
525〜534:ソース電極またはドレイン電極
535〜539:ゲート引出配線
540:第2の電極
541:第3の電極
542:第4の電極
543:第6絶縁膜
544:引出配線
545:下地膜
546:アンテナ
600:アンチヒューズ型のROM
601:ロジック回路部
602:メモリ部
603:アンテナ部及び電源部
604:第1の電極の引出配線部
701:第2の電極
702:第5の電極
1511 電源回路
1512 クロック発生回路
1513 データ復調/変調回路
1514 制御回路
1515 インターフェイス回路
1516 記憶回路
1517 データバス
1518 アンテナ(アンテナコイル)
1519 リーダライタ
1520 半導体装置
1523a センサ
1523b センサ回路
2700 筐体
2701 パネル
2702 ハウジング
2703 プリント配線基板
2704 操作ボタン
2705 バッテリ
2706 筐体
2708 接続フィルム
2709 画素領域
Claims (4)
- 基板上方に、第1の半導体層を形成する工程と、
前記基板及び前記第1の半導体層上方に、第1の絶縁層を形成する工程と、
前記第1の絶縁層上方に、前記第1の半導体層と重なる領域を有する第1の電極と、第2の電極と、を形成する工程と、
前記第1の電極及び前記第2の電極上方に、第2の絶縁層を形成する工程と、
前記第2の絶縁層に、前記第2の電極に達する第1の開口を形成する工程と、
前記第1の開口に、シリコンを含む第2の半導体層を形成する工程と、
前記第2の半導体層上方に、ゲルマニウムを含む第3の半導体層を形成する工程と、
前記第1の絶縁層及び前記第2の絶縁層に、前記第1の半導体層に達する第2の開口を形成する工程と、
前記第3の半導体層上方に第3の電極を形成し、前記第2の開口に第4の電極を形成する工程と、を有することを特徴とする半導体装置の作製方法。 - 基板上方に、第1の半導体層を形成する工程と、
前記基板及び前記第1の半導体層上方に、第1の絶縁層を形成する工程と、
前記第1の絶縁層上方に、前記第1の半導体層と重なる領域を有する第1の電極と、第2の電極と、を形成する工程と、
前記第1の電極及び前記第2の電極上方に、第2の絶縁層を形成する工程と、
前記第2の絶縁層に、前記第2の電極に達する第1の開口を形成する工程と、
前記第1の開口に、シリコンを含む第2の半導体層を形成する工程と、
前記第2の半導体層上方に、ゲルマニウムを含む第3の半導体層を形成する工程と、
前記第1の絶縁層及び前記第2の絶縁層に、前記第1の半導体層に達する第2の開口を形成する工程と、
前記第3の半導体層上方に第3の電極を形成し、前記第2の開口に第4の電極を形成し、前記第2の絶縁層上方に第5の電極を形成する工程と、
前記第5の電極上方に、アンテナを形成する工程と、を有することを特徴とする半導体装置の作製方法。 - 請求項1又は2において、
前記第2の電極は、タングステンを含み、
前記第2の半導体層は、アモルファスシリコンを含み、
前記第3の半導体層は、アモルファスゲルマニウムを含み、
前記第3の電極は、チタンを含むことを特徴とする半導体装置の作製方法。 - 請求項1乃至3のいずれか一項において、
前記第2の半導体層は、酸素又は窒素を含むことを特徴とする半導体装置の作製方法。
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