KR101529057B1 - 반도체 장치 및 메모리의 데이터 기록 방법 - Google Patents

반도체 장치 및 메모리의 데이터 기록 방법 Download PDF

Info

Publication number
KR101529057B1
KR101529057B1 KR1020080126772A KR20080126772A KR101529057B1 KR 101529057 B1 KR101529057 B1 KR 101529057B1 KR 1020080126772 A KR1020080126772 A KR 1020080126772A KR 20080126772 A KR20080126772 A KR 20080126772A KR 101529057 B1 KR101529057 B1 KR 101529057B1
Authority
KR
South Korea
Prior art keywords
state
fuse
circuit
memory
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080126772A
Other languages
English (en)
Korean (ko)
Other versions
KR20090064338A (ko
Inventor
하지메 도쿠나가
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20090064338A publication Critical patent/KR20090064338A/ko
Application granted granted Critical
Publication of KR101529057B1 publication Critical patent/KR101529057B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069—I/O lines read out arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1020080126772A 2007-12-14 2008-12-12 반도체 장치 및 메모리의 데이터 기록 방법 Expired - Fee Related KR101529057B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007323224 2007-12-14
JPJP-P-2007-323224 2007-12-14

Publications (2)

Publication Number Publication Date
KR20090064338A KR20090064338A (ko) 2009-06-18
KR101529057B1 true KR101529057B1 (ko) 2015-06-16

Family

ID=40753036

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080126772A Expired - Fee Related KR101529057B1 (ko) 2007-12-14 2008-12-12 반도체 장치 및 메모리의 데이터 기록 방법

Country Status (3)

Country Link
US (1) US7872934B2 (enExample)
JP (1) JP5268600B2 (enExample)
KR (1) KR101529057B1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5371400B2 (ja) * 2007-12-14 2013-12-18 株式会社半導体エネルギー研究所 メモリ及び半導体装置
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
US8520426B2 (en) * 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
JP2012256821A (ja) * 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
US9076505B2 (en) 2011-12-09 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
US10142424B2 (en) * 2013-10-16 2018-11-27 Empire Technology Development Llc Two-level cloud system migration
US11562902B2 (en) * 2020-07-19 2023-01-24 Applied Materials, Inc. Hydrogen management in plasma deposited films

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353412A (ja) * 2001-05-24 2002-12-06 Toshiba Microelectronics Corp 半導体記憶装置及び情報の記憶方法
JP2005183557A (ja) * 2003-12-18 2005-07-07 Canon Inc 半導体集積回路とその動作方法、該回路を備えたｉｃカード
US7224630B2 (en) * 2005-06-24 2007-05-29 Freescale Semiconductor, Inc. Antifuse circuit
JP2007138703A (ja) * 2007-02-01 2007-06-07 Tekunamu:Kk トンネル等の高速走行洗浄方法とトンネル等の高速走行洗浄装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117660A (ja) 1983-11-30 1985-06-25 Fujitsu Ltd 半導体記憶装置
JPH02239664A (ja) * 1989-03-13 1990-09-21 Olympus Optical Co Ltd 電気的記憶装置
US5426614A (en) * 1994-01-13 1995-06-20 Texas Instruments Incorporated Memory cell with programmable antifuse technology
JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
JP3501416B2 (ja) 1994-04-28 2004-03-02 忠弘 大見 半導体装置
JP3190800B2 (ja) * 1995-03-15 2001-07-23 甲府日本電気株式会社 転送速度切り替え機能付き非同期転送回路
JPH11273387A (ja) * 1998-03-26 1999-10-08 Sanyo Electric Co Ltd 不揮発性半導体メモリ装置
US6879525B2 (en) * 2001-10-31 2005-04-12 Hewlett-Packard Development Company, L.P. Feedback write method for programmable memory
US6690597B1 (en) * 2003-04-24 2004-02-10 Hewlett-Packard Development Company, L.P. Multi-bit PROM memory cell
JP4515134B2 (ja) 2004-04-06 2010-07-28 成田国際空港株式会社 航空手荷物管理システム
JP5145217B2 (ja) * 2006-05-31 2013-02-13 ルネサスエレクトロニクス株式会社 半導体装置
US7499355B2 (en) * 2006-07-31 2009-03-03 Sandisk 3D Llc High bandwidth one time field-programmable memory
US7649798B2 (en) * 2006-08-17 2010-01-19 Broadcom Corporation Memory device using antifuses
KR101406770B1 (ko) * 2006-10-04 2014-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 이의 제작 방법
EP2076923B1 (en) * 2006-10-24 2012-08-15 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device including storage device and method for driving the same
KR101416876B1 (ko) * 2006-11-17 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조방법
US7994607B2 (en) * 2007-02-02 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5525694B2 (ja) * 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353412A (ja) * 2001-05-24 2002-12-06 Toshiba Microelectronics Corp 半導体記憶装置及び情報の記憶方法
JP2005183557A (ja) * 2003-12-18 2005-07-07 Canon Inc 半導体集積回路とその動作方法、該回路を備えたｉｃカード
US7224630B2 (en) * 2005-06-24 2007-05-29 Freescale Semiconductor, Inc. Antifuse circuit
JP2007138703A (ja) * 2007-02-01 2007-06-07 Tekunamu:Kk トンネル等の高速走行洗浄方法とトンネル等の高速走行洗浄装置

Also Published As

Publication number Publication date
KR20090064338A (ko) 2009-06-18
JP2009163860A (ja) 2009-07-23
JP5268600B2 (ja) 2013-08-21
US7872934B2 (en) 2011-01-18
US20090154262A1 (en) 2009-06-18

Similar Documents

Publication Publication Date Title
KR101529057B1 (ko) 반도체 장치 및 메모리의 데이터 기록 방법
JP5371400B2 (ja) メモリ及び半導体装置
JP6968214B2 (ja) 半導体装置
KR101389119B1 (ko) 발진회로 및 그것을 구비한 반도체장치
KR101517943B1 (ko) 반도체장치 및 반도체장치 제조방법
US7994000B2 (en) Semiconductor device and method of manufacturing the same
US20140353758A1 (en) Semiconductor device
CN101097613A (zh) 半导体装置
EP2031546B1 (en) Semiconductor device
KR20080048423A (ko) 기억장치 및 반도체 장치
JP2005293563A (ja) 半導体装置、無線チップ、ｉｃカード、ｉｃタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグ及び衣類
JP2005268774A (ja) 半導体装置の製造方法、ｉｃカード、ｉｃタグ、ｒｆｉｄ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグ及び衣類
KR101205195B1 (ko) 반도체 장치
JP5346459B2 (ja) 発振回路およびそれを備えた半導体装置
JP2005251183A (ja) 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグ及び衣類
US8058997B2 (en) Wireless system, semiconductor device, and communication device
US20080186181A1 (en) Wireless system, semiconductor device, and communication device
KR101447051B1 (ko) 반도체 장치

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20180516

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20190515

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220611

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220611