CN110739012B - 存储阵列块及半导体存储器 - Google Patents
存储阵列块及半导体存储器 Download PDFInfo
- Publication number
- CN110739012B CN110739012B CN201910866578.8A CN201910866578A CN110739012B CN 110739012 B CN110739012 B CN 110739012B CN 201910866578 A CN201910866578 A CN 201910866578A CN 110739012 B CN110739012 B CN 110739012B
- Authority
- CN
- China
- Prior art keywords
- memory
- bit line
- transistor
- memory cell
- array block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000015654 memory Effects 0.000 title claims abstract description 89
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910866578.8A CN110739012B (zh) | 2019-09-12 | 2019-09-12 | 存储阵列块及半导体存储器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910866578.8A CN110739012B (zh) | 2019-09-12 | 2019-09-12 | 存储阵列块及半导体存储器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110739012A CN110739012A (zh) | 2020-01-31 |
CN110739012B true CN110739012B (zh) | 2021-07-20 |
Family
ID=69267898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910866578.8A Active CN110739012B (zh) | 2019-09-12 | 2019-09-12 | 存储阵列块及半导体存储器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110739012B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111724848B (zh) * | 2020-06-10 | 2021-04-16 | 厦门半导体工业技术研发有限公司 | 一种阻变式存储器单元的操作电路、操作方法及集成电路 |
US11729997B2 (en) * | 2020-06-29 | 2023-08-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | 3D stackable memory and methods of manufacture |
CN114242748A (zh) * | 2021-12-20 | 2022-03-25 | 厦门半导体工业技术研发有限公司 | 一种存储单元组及其制造方法 |
CN114783486B (zh) * | 2022-06-21 | 2022-08-26 | 北京大学 | 一种基于1t2r阻变存储器阵列的存内计算加速器及其应用 |
CN117672284A (zh) * | 2022-08-22 | 2024-03-08 | 浙江驰拓科技有限公司 | 存储阵列及其互联结构、操作方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100653699B1 (ko) * | 2004-08-04 | 2006-12-04 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 배치방법 |
CN101359503A (zh) * | 2008-07-24 | 2009-02-04 | 复旦大学 | 一种电阻转换存储器及其存储操作方法 |
JP5598338B2 (ja) * | 2011-01-13 | 2014-10-01 | ソニー株式会社 | 記憶装置およびその動作方法 |
-
2019
- 2019-09-12 CN CN201910866578.8A patent/CN110739012B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN110739012A (zh) | 2020-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110739012B (zh) | 存储阵列块及半导体存储器 | |
US6462984B1 (en) | Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array | |
KR101652826B1 (ko) | 반도체 소자 및 그 구동 방법 | |
US7251154B2 (en) | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | |
EP1489621B1 (en) | Transistor-free random access memory | |
US7894237B2 (en) | Programming multilevel cell phase change memories | |
CN115552527A (zh) | 读取刷新操作 | |
US11783902B2 (en) | Multi-state programming of memory cells | |
JP2006510220A (ja) | メモリ及びアクセス装置 | |
WO2018022382A2 (en) | Variable page size architecture | |
JP7471422B2 (ja) | メモリセルの三状態プログラミング | |
CN110428858B (zh) | 基于具有滞回特性器件的静态存储器 | |
US9887004B2 (en) | Bi-directional RRAM decoder-driver | |
CN110827877A (zh) | 针对存储器装置中的存取线故障的存取方案 | |
US8842462B2 (en) | Resistive random access memory device and operating method thereof | |
US20220238157A1 (en) | Memory cell programming that cancels threshold voltage drift | |
US20070153562A1 (en) | Bit cell of organic memory | |
US10192616B2 (en) | Ovonic threshold switch (OTS) driver/selector uses unselect bias to pre-charge memory chip circuit and reduces unacceptable false selects | |
CN103971725A (zh) | 基于电阻的随机存取存储器 | |
JP7092924B2 (ja) | 読み出し中のmramにおける信号の保存 | |
CN100536023C (zh) | 半密度嵌入rom的dram | |
CN110751968A (zh) | 用于puf的电路结构、获取puf数据的方法及电子设备 | |
US9147657B2 (en) | Memory cell repair | |
CN116114021B (zh) | 使用非对称电流脉冲来对存储器单元进行编程 | |
JP7095163B2 (ja) | 読み出し中のmramにおける信号の増幅 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Liu Yihua Inventor after: Xiao Han Inventor after: Wang Zongwei Inventor after: Cai Yimao Inventor after: Huang Ru Inventor before: Liu Yihua Inventor before: Xiao Han Inventor before: Wang Zongwei Inventor before: Cai Yimao |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200826 Address after: Room 101, building 1, block C, Qianjiang Century Park, ningwei street, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant after: Hangzhou Weiming Information Technology Co.,Ltd. Applicant after: Institute of Information Technology, Zhejiang Peking University Address before: Room 288-1, 857 Xinbei Road, Ningwei Town, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant before: Institute of Information Technology, Zhejiang Peking University Applicant before: Hangzhou Weiming Information Technology Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |