CN110751968A - 用于puf的电路结构、获取puf数据的方法及电子设备 - Google Patents
用于puf的电路结构、获取puf数据的方法及电子设备 Download PDFInfo
- Publication number
- CN110751968A CN110751968A CN201910867358.7A CN201910867358A CN110751968A CN 110751968 A CN110751968 A CN 110751968A CN 201910867358 A CN201910867358 A CN 201910867358A CN 110751968 A CN110751968 A CN 110751968A
- Authority
- CN
- China
- Prior art keywords
- puf
- resistance value
- memory
- puf data
- circuit structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000011159 matrix material Substances 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 14
- 230000006870 function Effects 0.000 claims abstract description 11
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 10
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 238000009826 distribution Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 5
- 229910003070 TaOx Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910867358.7A CN110751968A (zh) | 2019-09-12 | 2019-09-12 | 用于puf的电路结构、获取puf数据的方法及电子设备 |
PCT/CN2020/114134 WO2021047527A1 (zh) | 2019-09-12 | 2020-09-09 | 用于puf的电路结构、获取puf数据的方法及电子设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910867358.7A CN110751968A (zh) | 2019-09-12 | 2019-09-12 | 用于puf的电路结构、获取puf数据的方法及电子设备 |
Publications (1)
Publication Number | Publication Date |
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CN110751968A true CN110751968A (zh) | 2020-02-04 |
Family
ID=69276412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910867358.7A Pending CN110751968A (zh) | 2019-09-12 | 2019-09-12 | 用于puf的电路结构、获取puf数据的方法及电子设备 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN110751968A (zh) |
WO (1) | WO2021047527A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021047527A1 (zh) * | 2019-09-12 | 2021-03-18 | 杭州未名信科科技有限公司 | 用于puf的电路结构、获取puf数据的方法及电子设备 |
WO2021239910A1 (de) * | 2020-05-29 | 2021-12-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und verfahren zur erzeugung von hardware-basierten physikalisch nicht klonbaren funktionen und deren verwendung |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106920568A (zh) * | 2017-03-10 | 2017-07-04 | 东南大学 | 一种四值忆阻器的读写电路 |
CN109472168A (zh) * | 2017-09-08 | 2019-03-15 | 中电海康集团有限公司 | 基于一次性可编程mram的物理不可克隆函数生成方法及装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108875417B (zh) * | 2017-05-09 | 2020-05-08 | 中芯国际集成电路制造(上海)有限公司 | Puf特征值的生成方法和具有puf的器件 |
US10243749B2 (en) * | 2017-05-16 | 2019-03-26 | Samsung Electronics Co., Ltd. | Physically unclonable function circuit, and system and integrated circuit including the same |
CN109509495B (zh) * | 2017-09-14 | 2020-09-22 | 清华大学 | 阻变存储器的操作方法及其操作装置、芯片以及芯片认证方法 |
CN109495272B (zh) * | 2018-10-31 | 2021-04-30 | 复旦大学 | 一种基于忆阻器的强puf电路 |
CN110751968A (zh) * | 2019-09-12 | 2020-02-04 | 浙江省北大信息技术高等研究院 | 用于puf的电路结构、获取puf数据的方法及电子设备 |
-
2019
- 2019-09-12 CN CN201910867358.7A patent/CN110751968A/zh active Pending
-
2020
- 2020-09-09 WO PCT/CN2020/114134 patent/WO2021047527A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106920568A (zh) * | 2017-03-10 | 2017-07-04 | 东南大学 | 一种四值忆阻器的读写电路 |
CN109472168A (zh) * | 2017-09-08 | 2019-03-15 | 中电海康集团有限公司 | 基于一次性可编程mram的物理不可克隆函数生成方法及装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021047527A1 (zh) * | 2019-09-12 | 2021-03-18 | 杭州未名信科科技有限公司 | 用于puf的电路结构、获取puf数据的方法及电子设备 |
WO2021239910A1 (de) * | 2020-05-29 | 2021-12-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und verfahren zur erzeugung von hardware-basierten physikalisch nicht klonbaren funktionen und deren verwendung |
Also Published As
Publication number | Publication date |
---|---|
WO2021047527A1 (zh) | 2021-03-18 |
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CB03 | Change of inventor or designer information |
Inventor after: Liu Yihua Inventor after: Xiao Han Inventor after: Wang Zongwei Inventor after: Cai Yimao Inventor after: Huang Ru Inventor before: Liu Yihua Inventor before: Xiao Han Inventor before: Wang Zongwei Inventor before: Cai Yimao |
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CB03 | Change of inventor or designer information | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200826 Address after: Room 101, building 1, block C, Qianjiang Century Park, ningwei street, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant after: Hangzhou Weiming Information Technology Co.,Ltd. Applicant after: Institute of Information Technology, Zhejiang Peking University Address before: Room 288-1, 857 Xinbei Road, Ningwei Town, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant before: Institute of Information Technology, Zhejiang Peking University Applicant before: Hangzhou Weiming Information Technology Co.,Ltd. |
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Application publication date: 20200204 |
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RJ01 | Rejection of invention patent application after publication |