JP5214213B2 - 記憶装置の駆動方法 - Google Patents

記憶装置の駆動方法 Download PDF

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Publication number
JP5214213B2
JP5214213B2 JP2007276352A JP2007276352A JP5214213B2 JP 5214213 B2 JP5214213 B2 JP 5214213B2 JP 2007276352 A JP2007276352 A JP 2007276352A JP 2007276352 A JP2007276352 A JP 2007276352A JP 5214213 B2 JP5214213 B2 JP 5214213B2
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Prior art keywords
electrode
film
transistor
memory element
conductive layer
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JP2007276352A
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Japanese (ja)
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JP2008135729A (ja
JP2008135729A5 (enExample
Inventor
肇 徳永
利彦 齋藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2007276352A 2006-10-24 2007-10-24 記憶装置の駆動方法 Expired - Fee Related JP5214213B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007276352A JP5214213B2 (ja) 2006-10-24 2007-10-24 記憶装置の駆動方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006288788 2006-10-24
JP2006288788 2006-10-24
JP2007276352A JP5214213B2 (ja) 2006-10-24 2007-10-24 記憶装置の駆動方法

Publications (3)

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JP2008135729A JP2008135729A (ja) 2008-06-12
JP2008135729A5 JP2008135729A5 (enExample) 2010-12-09
JP5214213B2 true JP5214213B2 (ja) 2013-06-19

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JP2007276352A Expired - Fee Related JP5214213B2 (ja) 2006-10-24 2007-10-24 記憶装置の駆動方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5268192B2 (ja) * 2009-02-26 2013-08-21 株式会社半導体エネルギー研究所 Ｏｔｐメモリの検査方法、ｏｔｐメモリの作製方法、および半導体装置の作製方法
WO2011152286A1 (en) * 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN110071136A (zh) * 2018-01-21 2019-07-30 成都海存艾匹科技有限公司 三维纵向电编程存储器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745792A (ja) * 1992-12-18 1995-02-14 Texas Instr Inc <Ti> アンチヒューズとそれをプログラムする方法
JP3559580B2 (ja) * 1993-12-17 2004-09-02 財団法人国際科学振興財団 半導体装置
JP3682305B2 (ja) * 1993-12-17 2005-08-10 財団法人国際科学振興財団 半導体装置の製造方法
JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
JPH08139197A (ja) * 1994-11-11 1996-05-31 Tadahiro Omi シリサイド反応を利用した半導体装置
JPH1056066A (ja) * 1996-08-08 1998-02-24 Matsushita Electron Corp アンチヒューズ素子およびその製造方法
JP2000123592A (ja) * 1998-10-19 2000-04-28 Mitsubishi Electric Corp 半導体装置
JP4045245B2 (ja) * 2004-02-12 2008-02-13 株式会社ルネサステクノロジ 半導体装置

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