JP5008323B2 - メモリ装置 - Google Patents

メモリ装置 Download PDF

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Publication number
JP5008323B2
JP5008323B2 JP2006074366A JP2006074366A JP5008323B2 JP 5008323 B2 JP5008323 B2 JP 5008323B2 JP 2006074366 A JP2006074366 A JP 2006074366A JP 2006074366 A JP2006074366 A JP 2006074366A JP 5008323 B2 JP5008323 B2 JP 5008323B2
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JP
Japan
Prior art keywords
layer
region
conductive layer
organic compound
contact
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006074366A
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English (en)
Japanese (ja)
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JP2006310799A (ja
JP2006310799A5 (enExample
Inventor
良信 浅見
圭恵 高野
真之 坂倉
亮二 野村
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006074366A priority Critical patent/JP5008323B2/ja
Publication of JP2006310799A publication Critical patent/JP2006310799A/ja
Publication of JP2006310799A5 publication Critical patent/JP2006310799A5/ja
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Publication of JP5008323B2 publication Critical patent/JP5008323B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2006074366A 2005-03-28 2006-03-17 メモリ装置 Expired - Fee Related JP5008323B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006074366A JP5008323B2 (ja) 2005-03-28 2006-03-17 メモリ装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005091318 2005-03-28
JP2005091318 2005-03-28
JP2006074366A JP5008323B2 (ja) 2005-03-28 2006-03-17 メモリ装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010046236A Division JP2010183088A (ja) 2005-03-28 2010-03-03 半導体装置
JP2012061508A Division JP5401574B2 (ja) 2005-03-28 2012-03-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2006310799A JP2006310799A (ja) 2006-11-09
JP2006310799A5 JP2006310799A5 (enExample) 2009-04-02
JP5008323B2 true JP5008323B2 (ja) 2012-08-22

Family

ID=37477263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006074366A Expired - Fee Related JP5008323B2 (ja) 2005-03-28 2006-03-17 メモリ装置

Country Status (1)

Country Link
JP (1) JP5008323B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692223B2 (en) * 2006-04-28 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method for manufacturing the same
EP1962408B1 (en) 2006-11-16 2015-05-27 Semiconductor Energy Laboratory Co., Ltd. Radio field intensity measurement device, and radio field intensity detector and game console using the same
KR101416876B1 (ko) 2006-11-17 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조방법
EP2084745A4 (en) 2006-11-29 2012-10-24 Semiconductor Energy Lab DEVICE AND METHOD FOR THE PRODUCTION THEREOF
JP5459896B2 (ja) * 2007-03-05 2014-04-02 株式会社半導体エネルギー研究所 配線及び記憶素子の作製方法
JP5512931B2 (ja) * 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7977678B2 (en) * 2007-12-21 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
WO2011062067A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102687275B (zh) * 2010-02-05 2016-01-27 株式会社半导体能源研究所 半导体装置
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI539597B (zh) * 2011-01-26 2016-06-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2012209543A (ja) * 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US9653614B2 (en) * 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10566455B2 (en) 2013-03-28 2020-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162370A (ja) * 1995-12-14 1997-06-20 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2002026282A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 単純マトリクス型メモリ素子の製造方法
JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
JP2002043517A (ja) * 2000-07-21 2002-02-08 Sony Corp 半導体装置およびその製造方法
JP2002198496A (ja) * 2000-12-26 2002-07-12 Seiko Epson Corp 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置
JP2004128471A (ja) * 2002-08-07 2004-04-22 Canon Inc 不揮発メモリ装置
JP4566578B2 (ja) * 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
JP5110414B2 (ja) * 2003-03-19 2012-12-26 大日本印刷株式会社 有機双安定性素子、これを用いた有機双安定性メモリ装置、およびそれらの駆動方法

Also Published As

Publication number Publication date
JP2006310799A (ja) 2006-11-09

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