JP2004518022A5 - - Google Patents

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Publication number
JP2004518022A5
JP2004518022A5 JP2002556406A JP2002556406A JP2004518022A5 JP 2004518022 A5 JP2004518022 A5 JP 2004518022A5 JP 2002556406 A JP2002556406 A JP 2002556406A JP 2002556406 A JP2002556406 A JP 2002556406A JP 2004518022 A5 JP2004518022 A5 JP 2004518022A5
Authority
JP
Japan
Prior art keywords
metal layer
metal
copper
reduction potential
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002556406A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004518022A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2001/047369 external-priority patent/WO2002055762A2/en
Publication of JP2004518022A publication Critical patent/JP2004518022A/ja
Publication of JP2004518022A5 publication Critical patent/JP2004518022A5/ja
Pending legal-status Critical Current

Links

JP2002556406A 2000-11-03 2001-11-03 電子デバイス製造のための金属の電気化学的共析出 Pending JP2004518022A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24593700P 2000-11-03 2000-11-03
PCT/US2001/047369 WO2002055762A2 (en) 2000-11-03 2001-11-03 Electrochemical co-deposition of metals for electronic device manufacture

Publications (2)

Publication Number Publication Date
JP2004518022A JP2004518022A (ja) 2004-06-17
JP2004518022A5 true JP2004518022A5 (enExample) 2005-05-19

Family

ID=22928699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002556406A Pending JP2004518022A (ja) 2000-11-03 2001-11-03 電子デバイス製造のための金属の電気化学的共析出

Country Status (7)

Country Link
US (1) US20020127847A1 (enExample)
EP (1) EP1346083A2 (enExample)
JP (1) JP2004518022A (enExample)
KR (1) KR20030048110A (enExample)
CN (1) CN1529772A (enExample)
AU (1) AU2002245083A1 (enExample)
WO (1) WO2002055762A2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030159941A1 (en) * 2002-02-11 2003-08-28 Applied Materials, Inc. Additives for electroplating solution
US6974767B1 (en) * 2002-02-21 2005-12-13 Advanced Micro Devices, Inc. Chemical solution for electroplating a copper-zinc alloy thin film
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
JP4758614B2 (ja) * 2003-04-07 2011-08-31 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 電気めっき組成物および方法
US20050045485A1 (en) * 2003-09-03 2005-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Method to improve copper electrochemical deposition
TWI400365B (zh) 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
US7771579B2 (en) * 2004-12-03 2010-08-10 Taiwan Semiconductor Manufacturing Co. Electro chemical plating additives for improving stress and leveling effect
US7271482B2 (en) * 2004-12-30 2007-09-18 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
DE102005014748B4 (de) * 2005-03-31 2007-02-08 Advanced Micro Devices, Inc., Sunnyvale Technik zum elektrochemischen Abscheiden einer Legierung mit chemischer Ordnung
US7905994B2 (en) 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
JP2010045140A (ja) * 2008-08-11 2010-02-25 Nec Electronics Corp リードフレーム、リードフレームの製造方法及び半導体装置の製造方法
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
WO2015065150A1 (ko) * 2013-11-04 2015-05-07 서울시립대학교 산학협력단 합금 도금액과 펄스전류를 이용한 다층 도금 박막 제조방법
US9496145B2 (en) 2014-03-19 2016-11-15 Applied Materials, Inc. Electrochemical plating methods
US9758896B2 (en) 2015-02-12 2017-09-12 Applied Materials, Inc. Forming cobalt interconnections on a substrate
WO2016171526A1 (ko) * 2015-04-22 2016-10-27 덕산하이메탈(주) 나노 그레인 사이즈에 의한 발열 반응을 이용한 저온 소결 접합소재 및 이의 제조방법
KR102028239B1 (ko) * 2015-09-02 2019-10-02 단국대학교 천안캠퍼스 산학협력단 전주를 이용한 다양한 조성의 합금 박막 제조 방법
US9809892B1 (en) * 2016-07-18 2017-11-07 Rohm And Haas Electronic Materials Llc Indium electroplating compositions containing 1,10-phenanthroline compounds and methods of electroplating indium
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN115182004A (zh) 2016-12-20 2022-10-14 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
RU2684423C1 (ru) * 2018-05-21 2019-04-09 Федеральное государственное бюджетное образовательное учреждение высшего образования "Саратовский государственный технический университет имени Гагарина Ю.А." (СГТУ имени Гагарина Ю.А.) Способ изготовления хеморезистора на основе наноструктур оксида цинка электрохимическим методом
JP7087759B2 (ja) * 2018-07-18 2022-06-21 住友金属鉱山株式会社 銅張積層板
US11901225B2 (en) * 2021-09-14 2024-02-13 Applied Materials, Inc. Diffusion layers in metal interconnects

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4108739A (en) * 1973-09-04 1978-08-22 Fuji Photo Film Co., Ltd. Plating method for memory elements
JPS5713637B2 (enExample) * 1973-09-04 1982-03-18
BR8805772A (pt) * 1988-11-01 1990-06-12 Metal Leve Sa Processo de formacao de camada de deslizamento de mancal
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
JP4394234B2 (ja) * 2000-01-20 2010-01-06 日鉱金属株式会社 銅電気めっき液及び銅電気めっき方法
US6679983B2 (en) * 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper

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