TWI412303B - 電子機器、電子零件、太陽能電池、太陽光發電裝置、發光二極體、發光裝置、照明裝置、號誌燈及液晶顯示器 - Google Patents

電子機器、電子零件、太陽能電池、太陽光發電裝置、發光二極體、發光裝置、照明裝置、號誌燈及液晶顯示器 Download PDF

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Publication number
TWI412303B
TWI412303B TW100147025A TW100147025A TWI412303B TW I412303 B TWI412303 B TW I412303B TW 100147025 A TW100147025 A TW 100147025A TW 100147025 A TW100147025 A TW 100147025A TW I412303 B TWI412303 B TW I412303B
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Taiwan
Prior art keywords
layer
metallization
melting point
point metal
metal component
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TW100147025A
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English (en)
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TW201247044A (en
Inventor
Shigenobu Sekine
Yurina Sekine
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Napra Co Ltd
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Publication of TW201247044A publication Critical patent/TW201247044A/zh
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Description

電子機器、電子零件、太陽能電池、太陽光發電裝置、發光二極體、發光裝置、照明裝置、號誌燈及液晶顯示器
本發明係關於一種電子機器，即應用電子工學技術的電氣製品。關於本發明的電子機器中，不用說是在基板上配置有電子零件的一般電子機器，也包含太陽能電池、太陽光發電裝置、使用發光二極體的發光裝置、照明裝置、號誌燈等的電子機器等。
如眾所周知，電子機器係在基板的一面上形成具有既定圖案的配線圖案，在此配線圖案上焊接主動零件或被動零件等的電子零件。配線圖案係藉由在預先形成於基板上的Cu箔上塗布抗蝕劑後，將Cu箔利用光微影步驟圖案化而得到。配線圖案之中，僅焊接電子零件所需的部分，露出Cu箔，在不要焊接的部分以不附加焊錫的方式，在基板上形成以熱硬化性環氧樹脂等構成的抗焊皮膜。然後，在露出的Cu箔上焊接電子零件。
如此，在習知的電子機器方面，必須經過準備貼銅基板、塗布抗蝕劑步驟、光微影步驟、塗布抗焊劑步驟及安裝零件步驟這種多數的步驟而進行製造。因此，在減低成本或提升量產上皆有限。
也有和上述的手法不同，採取在基板上直接網版印刷導電性糊的手法。此時所使用的導電性糊為使成為導電成分的金屬粉末或合金粉末分散於有機媒液中的導電性糊。有機媒液含有熱硬化性絕緣樹脂、或熱可塑性絕緣樹脂等的絕緣樹脂及溶劑。根據情況，也有為了提升金屬粉末的分散性或確保阻燃性而添加第3成分。
如此得到的配線圖案成為金屬粉末分散於絕緣樹脂中的結構。因此，相較於利用金屬導體本身的情況，導電性變差。
於是，為了使導電性提升，考慮使用粒徑小的金屬粉末，使填充率增加。然而，金屬粉末因粒徑越小越容易凝聚而難以使其均勻地分散於導電性糊中，並且相鄰的金屬粒子間的接觸部分增加而連接電阻增加的部分卻得不到與填充率增加相稱的導電性提升的效果。
此外，已知使用銀粉或Cu粉作為上述金屬粉末，就可得到導電性良好的配線。
然而，含有銀粉的導電性糊在高溫多濕的氣體環境下施加電場，就會在電路或電極產生稱為遷移(migration)的銀的電解結晶，在由配線圖案所形成的電極間或配線間發生短路現象這種缺點。作為用以防止此遷移的對策手段，已知例如在銀粉的表面塗布防濕塗料、或在導電性糊中添加氮化合物等抑制腐蝕劑等的手法，但並不能得到充分的效果(參閱特開2001-189107號公報)。此外，要得到導電性高的導體，必須增加銀粉的摻合量，因銀粉昂貴而有電子機器變得昂貴的缺點。
此外，含有Cu粉的導電性糊因加熱硬化後的Cu的氧化性高而Cu粉會和空氣中及黏合劑中所含的氧反應，在其表面形成氧化膜，使導電性明顯降低。作為其對策，在特開平5-212579號公報中揭示了一種加入各種添加劑，以防止Cu粉的氧化，使導電性穩定的Cu糊。然而，其導電性比不上銀糊，而保存、穩定性也有缺點。
為了改善遷移，得到廉價的導電性糊，一種使用鍍銀Cu粉的導電性糊被提出(參閱特開平7-138549號公報、特開平10-134636號公報)。然而，若將銀均勻且厚地覆膜，則有時會不能充分得到遷移的改善效果。相反地，若薄地覆膜，則為了確保良好的導電性而需要使導電粉的填充量增加，其結果，有時會產生引起接著力(接著強度)伴隨相對的黏合劑成分減少而降低這種問題。
再者，在室外所使用的電子機器，例如太陽能電池方面，被要求長期間經得起嚴酷的環境變動的耐久性。特別是在日照時間長的沙漠等設置太陽能電池時，有時設置場所的溫度變動幅度會超過100℃。然而，利用上述技術形成電極的習知的太陽能電池被放置於如此嚴酷的自然環境中時，會產生電極在幾年左右就劣化、產生剝離等的問題。
本發明之課題係提供一種具有導電性、電氣化學穩定性、耐氧化性、填充性、緊密性、機械及物理強度佳並且對於基板的接著力及密合力高的高品質及高可靠性的金屬化配線之電子機器。
為了解決上述的課題，關於本發明之電子機器含有基板與電子零件。前述基板具有金屬化配線，前述電子零件在前述基板上電性連接於前述金屬化配線。
前述金屬化配線包含金屬化層、及絕緣層。前述金屬化層含有高熔點金屬成分與低熔點金屬成分，前述高熔點金屬成分及前述低熔點金屬成分互相擴散接合。前述絕緣層係和前述金屬化層同時形成，構成覆蓋前述金屬化層外面的保護膜。
如上述，在本發明方面，由於金屬化層含有高熔點金屬成分與低熔點金屬成分，所以能夠以低熔點金屬成分具有的低的熔點使高熔點金屬成分與低熔點金屬成分之間產生擴散接合。
如上述，由於高熔點金屬成分及低熔點金屬成分互相擴散接合，所以可實現具有電氣化學穩定性、耐氧化性佳並且難以產生遷移或氧化膜等的金屬化層之電子機器。
此外，由於藉由高熔點金屬成分及低熔點金屬成分的擴散接合構成幾乎沒有孔洞或斷線的連續的金屬化層，所以可得到具有金屬化層的填充度、緊密性提升、導電性高、機械及物理強度高的金屬化層之電子機器。而且，由於含有高熔點金屬成分與低熔點金屬成分，所以藉由其材料選定，可得到具有導電性高的金屬化層之電子機器。
再者，由於絕緣層構成為覆蓋金屬化層外面的保護膜，所以除了可避免金屬化層的外在損傷之外，耐氧化性、耐久性、耐候性也提升。而且，除了對於基板的金屬化層本身的密合力及接著力之外，也產生絕緣層的密合力及接著力，所以金屬化配線全體的密合力及接著力提升。
此外，由於絕緣層和金屬化層同時形成，所以和在不同時間形成金屬化層與絕緣層不同，金屬化層不會接觸到空氣。因此，可得到具有不受到氧化的高品質的金屬化層之電子機器。
綜合上述的作用效果，可得到具有導電性、電氣化學穩定性、耐氧化性、填充性、緊密性、機械及物理強度佳並且對於基板的接著力及密合力高的高品質、高可靠性的金屬化配線之電子機器。
金屬化配線也可以形成於Cu膜(Cu箔)等的金屬或合金膜之上。若在Cu膜上形成以高熔點金屬成分及低熔點金屬成分構成的金屬化配線，則在不改變Cu箔厚度的情況下，可使金屬化配線全體的剖面積增大，減低電阻。此外，在使Cu箔變薄的情況下，可使金屬化配線全體的剖面積增大，減低電阻。
在本發明方面，於電子機器中可包含應用電子工學技術的電氣製品的全部。在本發明方面，該等電子機器之中，將揭示關於電腦、行動電話、積層電子裝置、電子機器、電子零件、太陽能電池、發光二極體、發光裝置、照明裝置、號誌燈及液晶顯示器等。此等電子機器雖然為具體的名稱所指定，但在應用電子工學技術的電氣製品這一方面，包含於本發明中所謂的電子機器之範疇內。
如上述，藉由本發明，可提供一種具有電氣化學穩定性、耐氧化性、填充性、緊密性、導電性、機械及物理強度佳並且對於基板的接著力及密合力高的高品質及高可靠性的金屬化配線之電子機器。
本發明從下文所給予的詳細敘述及僅作為實例的附圖中當可更加充分理解，並且如此不被認為是限定本發明。
 [實施發明之形態]
參閱圖1，關於本發明的電子機器含有基板11與電子零件141～146。此等構件一般配置於外裝體2的內部。
基板11含有具有既定圖案的金屬化配線12。基板11可以是有機基板，也可以是無機基板。此外，可以是可構成半導體電路的基板，例如Si基板，也可以是單一的絕緣基板。
電子零件141～146在基板11上電性連接於金屬化配線12。圖1上附有以電子零件141～146為群而顯示的參考符號14。電子零件141～146為主動零件、被動零件或此等零件的複合零件，其個數、種類、形狀等按照電子機器的功能、設計而變化。電子零件141～146係以在電子系統內取決於電子的動作或其相關的力場之形式給予影響，實現系統所求的功能。電子零件141～146以金屬化配線12互相連接，構成具有特定功能的電子電路。電子零件141～146有被個別地封裝的情況、及以積體電路的形式被複合地封裝並模組化的情況。
再者，就本發明的電子機器中所含的構件而言，也有不具有基板11與電子零件141～146的明確區分，而基板11擔負作為電子零件141～146的功能的電子機器，例如太陽能電池等。
如圖2及圖3所圖示，金屬化配線12包含金屬化層121、及絕緣層122。金屬化層121含有高熔點金屬成分與低熔點金屬成分，高熔點金屬成分及低熔點金屬成分互相擴散接合，構成填充密度高的一連串連續的金屬層。高熔點金屬成分可含有由Ag、Cu、Au、Pt、Ti、Zn、Al、Fe、Si或Ni之群中所選擇的至少一種，低熔點金屬成分可含有由Sn、In、Bi或Ga之群中所選擇的至少一種。金屬化層121也可以含有奈米碳管。
絕緣層122係由絕緣樹脂構成，和金屬化層121同時形成，構成覆蓋金屬化層121外面的保護膜。如圖2及圖3所圖示，絕緣層122具有既定的厚度，連續覆蓋金屬化層121的表面、線寬方向的兩側面及長度方向的端面。
此外，如圖4所圖示，電子零件141～146係以其端子電極13穿過絕緣層122，深入其下側的金屬化層121之方式連接。端子電極13的周圍由絕緣層122所覆蓋。
如上述，金屬化層121因含有高熔點金屬成分與低熔點金屬成分而可利用低熔點金屬成分具有的低熔點，使高熔點金屬成分與低熔點金屬成分之間產生擴散接合。如此，由於高熔點金屬成分及低熔點金屬成分互相擴散接合，所以可得到如下所述的作用效果。
首先，由於高熔點金屬成分及低熔點金屬成分互相擴散接合，所以可實現具有電氣化學穩定性、耐氧化性佳的金屬化層121的電子機器。
例如使用Ag作為熔點金屬成分時，在金屬化層121方面，藉由在Ag與低熔點金屬成分之間產生擴散接合，其電氣化學穩定性增加，可確實防止Ag的遷移。使用Cu作為高熔點金屬成分時，也在Cu與低熔點金屬成分之間產生擴散接合，可防止Cu的氧化。
其次，由於藉由高熔點金屬成分及低熔點金屬成分的擴散接合構成沒有孔洞或斷線的連續的金屬化層121，所以金屬化層121的填充度、緊密性提升、導電性變高，並且機械及物理強度增加。而且，由於含有高熔點金屬成分與低熔點金屬成分，所以藉由其材料選定，可得到具有導電性高的金屬化層121之電子機器。
此外，由於絕緣層122構成覆蓋金屬化層121外面的保護膜，所以除了可避免金屬化層121的外在損傷之外，耐氧化性、耐久性及耐候性也提升。而且，除了金屬化層121本身的密合力及接著力之外，也產生絕緣層122的密合力及接著力，所以金屬化配線12全體的密合力及接著力提升。
再者，由於絕緣層122係和金屬化層121同時形成，所以和在不同時間形成金屬化層121與絕緣層122不同，金屬化層121不會接觸到空氣。因此，可得到具有不受到氧化的高品質的金屬化層121之電子機器。
綜合上述的作用效果，可得到具有導電性、電氣化學穩定性、耐氧化性、填充性、緊密性、機械及物理強度佳並且對於基板的接著力及密合力高的高品質及高可靠性的金屬化層121之電子機器。
金屬化層121及絕緣層122可使用含有絕緣樹脂、金屬成分及溶劑的導電糊形成。構成絕緣層122的絕緣樹脂可以含有熱硬化性絕緣樹脂、或熱可塑性絕緣樹脂者構成。使用熱硬化性絕緣樹脂時，最佳為其硬化點比低熔點金屬成分的熔點高、比高熔點金屬成分的熔點低。
最好絕緣樹脂包含由環氧絕緣樹脂、丙烯酸酯絕緣樹脂或酚醛絕緣樹脂中所選擇的至少一種。就用以糊化的溶劑而言，可使用丁基卡必醇、丁基卡必醇醋酸、丁基賽路蘇、甲基異丁基酮、甲苯、或二甲苯之類的眾所周知的有機溶媒。
如圖5所圖示，金屬化層121及絕緣層122係將包含由金屬粒子的高熔點金屬成分124及金屬粒子的低熔點金屬成分123構成的金屬成分、及絕緣樹脂122的導電糊使用網版印刷技術，如圖6所圖示，以成為既定圖案的方式塗布於基板11上，進行熱處理而得到。因此，不需要以往必須的準備貼銅基板、塗布抗蝕劑步驟及光微影步驟，即可得到顯著的成本減低及量產性提升的效果。
當熱處理時，最佳是以比低熔點金屬成分123的熔點高、比高熔點金屬成分124的熔點低的溫度，例如100～300℃加熱。藉由此熱處理，可得到低熔點金屬成分123熔化，高熔點金屬成分124及低熔點金屬成分123凝聚，高熔點金屬成分124的相互間由熔化的低熔點金屬成分123所掩埋的填充構造，並且在低熔點金屬成分123與高熔點金屬成分124之間產生擴散接合(金屬間結合)。藉由此擴散接合，形成不含絕緣樹脂的金屬化層121。金屬化層121因其比重差而沈降於比絕緣樹脂層122更下側。藉此，形成以由絕緣樹脂構成的保護層122覆蓋附著於基板11上的金屬化層121外面(表面及側面)的兩層構造的金屬化配線12。由於絕緣層122構成覆蓋金屬化層121外面(表面、側面)的保護膜122，所以不需要另外的用以塗布保護膜122的步驟。
此外，使用Ag作為高熔點金屬成分時也是，在金屬化層121方面，在Ag與低熔點金屬成分之間產生擴散接合，並且在導電性組成物全體方面，絕緣層122覆蓋金屬化層121。藉由此結構，可確實地防止Ag的遷移。同樣地，使用Cu作為高熔點金屬成分時也是，在Cu與低熔點金屬成分之間產生擴散接合，並且金屬化層121由絕緣層122所覆蓋，所以可防止Cu的氧化。
就導電糊之別例而言，如圖7所圖示，可以使用以低熔點金屬膜123覆蓋高熔點金屬粒子124表面的金屬粒子者，或者也可以與此相反，使用以高熔點金屬膜覆蓋低熔點金屬粒子表面的金屬粒子者。
以高熔點金屬成分及低熔點金屬成分構成的金屬化配線12也可以如圖8及圖9所例示，形成於Cu膜等的金屬膜125之上。若將以高熔點金屬成分及低熔點金屬成分構成的金屬化層121形成於Cu膜125(Cu箔)之上，則在不改變Cu膜125厚度的情況下，可使金屬化配線12全體的剖面積增大，減低電阻。或者，藉由一面使Cu膜125的厚度變薄，一面將附著於其上的以高熔點金屬成分及低熔點金屬成分構成的金屬化層121形成得較厚，可使金屬化配線12全體的剖面積增大，減低電阻。
圖10為關於本發明的金屬化配線12的剖面照片。金屬化配線12為包含Sn、Bi、Ag的系統，分為絕緣層122、金屬化層121的兩層，絕緣層122覆膜金屬化層121的表面。觀察圖10得知，金屬化層121沒有間隙或斷線等。
圖11為使用以銀粒子及環氧絕緣樹脂構成的導電性糊所得到之比較例的配線的剖面照片。由此剖面照片得知，不被覆膜於銀粒子表面而各自存在。此外，看到斷線部。
再者，在關於本發明的金屬化配線12方面，如圖10所示，分為絕緣樹脂層、及金屬化層121兩層，絕緣樹脂層覆膜於絕緣層122的表面。相對於此，在比較例方面，如圖11的剖面照片所示，得知不被覆膜於銀粒子表面而各自存在，產生了銀遷移。出現於圖11的中間部的暗色部分顯示銀遷移所造成的斷線部分。
其次，就具有關於本發明的金屬化配線的PET薄膜、及具有上述比較例的銀配線的PET薄膜進行了測定折彎幾次就會產生斷線的強度試驗。施加的負荷、或塗布的厚度、室溫等的實驗條件為相同。
具有比較例的銀配線的PET薄膜藉由50次左右的折彎操作即產生了斷線，相對於此，具有關於本發明的金屬化配線的PET薄膜藉由超過5000次的折彎才產生了斷線。
本發明的電子機器中可包含應用電子工學技術的電氣製品的全部。若具代表性地例示，則為例如電腦、行動資訊機器、電腦周邊終端裝置、OA機器、通信機器、業務用資訊終端及自動辨識裝置、汽車電子機器、產業用機械、娛樂機器、音響機器、錄放影機器或家庭用電氣機器等。雖然不限定，但作為其具體例，可例示液晶顯示器、個人電腦、汽車導航系統、行動電話、積層電子裝置、太陽能電池、太陽光發電裝置、發光二極體、發光裝置、照明裝置、號誌燈、遊戲機、數位相機、電視接收機、DVD播放機、電子記事本、電子辭典、磁碟式記錄器、可攜式資訊終端機(PDA)、視頻攝影機、印表機、電漿顯示器、收音機等。由於紙面有限，所以作為上述電子機器之一例，以電腦、行動電話、積層電子裝置、太陽能電池、太陽光發電裝置、發光二極體、發光裝置、照明裝置、號誌燈、及液晶顯示器為例進行說明。
＜個人電腦＞
例如，如圖12所圖示，許多個人電腦具有CPU(Central Processing Unit；中央處理單元)141、及DRAM等的主記憶體143構成中心並於此附加硬碟控制器146、圖形控制器145等的基本結構。各構成部分由成為通信路徑的CPU匯流排12B1、記憶體匯流排12B2、內部匯流排12B3、12B4等所連結，此等匯流排12B1～12B4由晶片組144所結合。許多情況下，CPU141含有記憶體功能的一部分(快取記憶體)142，主記憶體143保持資料與程式的資訊。再者，作為周邊裝置4，具備輸入裝置43(鍵盤、滑鼠、掃描器等)、輸出裝置41(液晶顯示器、揚聲器等)、二次記憶裝置(硬碟驅動器等)42及通信裝置(調變解調器、網路介面等)。
關於本發明的金屬化配線除了可適用於CPU匯流排12B1、記憶體匯流排12B2、內部匯流排12B3、12B4之外，也可以適用於各構成部分141～146、4與匯流排12B1～12B4之間的配線12A。即，在接線板(基板)上形成匯流排12B1～12B4、或構成部分141～146、4與匯流排12B1～12B4之間的配線12A的情況下，將此等配線作為關於本發明的金屬化配線。如圖2～圖4所圖示，金屬化配線包含金屬化層121與絕緣層122。金屬化層121含有高熔點金屬成分與低熔點金屬成分，高熔點金屬成分及低熔點金屬成分互相擴散接合，構成連續的一連串的層。絕緣層122係和金屬化層121同時形成，構成覆蓋金屬化層121外面的保護膜。關於各構成部分與匯流排12B1～12B4之間的配線12A也同樣。
藉此，可得到具有導電性、電氣化學穩定性、耐氧化性、填充性、緊密性、機械及物理強度佳並且對於基板的接著力及密合力高的高品質及高可靠性的匯流排12B1～12B4、及配線12A之個人電腦。
＜行動電話＞
其次，例如如圖13所例示，行動電話具有天線154、前端模組141、功率放大電路142、收發信IC140及數位基帶147等。收發信IC具有發信電路143、收信電路148、進行基帶處理的類比電路145及輸入輸出介面I/O146等。類比電路145包含A/D轉換電路151及D/A轉換電路152等。
關於本發明的金屬化配線既可適用於天線154、前端模組141、功率放大電路142、收發信IC140及數位基帶147之間的配線12A，亦可適用於各構成部分141～154的內部配線。
藉此，可得到具有導電性、電氣化學穩定性、耐氧化性、填充性、緊密性、機械及物理強度佳並且對於基板的接著力及密合力高的高品質及高可靠性的配線12A及內部有配線之行動電話。
＜積層電子裝置＞
其次，參閱圖14，圖示了層積有第1晶片零件14A、第2晶片零件14B、及第3晶片零件14C的積層電子裝置。在例如圖12所示的電腦中，第1晶片零件14A及第3晶片零件14C係主記憶體143的晶片及與其連接的邏輯IC晶片等。第2晶片零件14B係為例如插件，位於構成主記憶體晶片的第1晶片零件14A與構成邏輯IC晶片的第3晶片零件14C之間，在兩者間形成既定的配線。在第2晶片零件14B與第3晶片零件14C之間及第2晶片零件14B與第1晶片零件14A之間形成有具有既定圖案的金屬化配線12。
金屬化配線12係關於本發明的金屬化配線，包含金屬化層121與絕緣層122。金屬化層121含有高熔點金屬成分與低熔點金屬成分，高熔點金屬成分及低熔點金屬成分互相擴散接合，形成一連串連續的金屬化層121。絕緣層122係由絕緣樹脂所構成，和金屬化層121同時形成，構成覆蓋金屬化層121外面的保護膜。
藉此，可得到具有導電性、電氣化學穩定性、耐氧化性、填充性、緊密性、機械及物理強度佳並且基板相互間的接著力高的高品質及高可靠性的金屬化配線12之積層電子裝置。
要得到圖14所示的三維積層電子裝置，如圖15所圖示，在第2晶片零件14B的一面或兩面塗布關於本發明的導電性糊12，塗布之後施以熱處理。由於導電性糊12含有高熔點金屬成分與低熔點金屬成分，所以當熱處理時，以比低熔點金屬成分的熔點高、比高熔點金屬成分的熔點低的溫度，例如100～300℃加熱。藉由此熱處理，低熔點金屬成分熔化。藉此，形成高熔點金屬成分及低熔點金屬成分凝聚，高熔點金屬成分之間藉由熔化的低熔點金屬成分所掩埋的填充構造，並且在低熔點金屬成分與高熔點金屬成分之間產生擴散接合。
由於低熔點金屬成分及高熔點金屬成分朝向第1晶片零件14A的端子電極13與第2晶片零件14B的端子電極125、及第2晶片零件14B的端子電極13與第3晶片零件14C的端子電極125凝聚，所以會形成連接第1晶片零件14A的端子電極13與第2晶片零件14B的端子電極125的金屬化層121、及連接第2晶片零件14B的端子電極13與第3晶片零件14C的端子電極125的金屬化層121。金屬化層121的外面(表面及側面)係以絕緣樹脂構成的保護層122所覆蓋。
第2晶片零件14B為插件的情況下，最佳為適用所謂的TSV(Through Silicon Via；經由矽通路)技術，在厚度方向形成貫穿電極。藉此，可有助於實現三維電路配置構造，以和線寬細微化不同的手法改善大容量化、傳輸速度的高速化、高頻特性等。
在實現TSV構造方面，最佳係擔任中心角色的縱向導體是藉由熔融金屬填充法形成的熔融凝固導體。要用熔融金屬填充法形成以熔融凝固體構成的縱向導體(貫穿電極)，係例如預先在基板上所開的微細孔內填充熔融金屬，在對所填充的熔融金屬施加使用壓板的沖壓、注入射出壓或滾壓的狀態下進行冷卻，使其硬化。藉由此熔融金屬填充法，相較於電鍍等，可在極短時間內形成無空洞等的高品質的縱向導體(貫穿電極)。因此，可實現以和線寬細微化不同的手法謀求改善大容量化、傳輸速度的高速化、高頻特性等的高品質的三維構造的電子機器。
作為別的形態，也可以將TSV技術適用於記憶體或邏輯IC等的電子零件141～146本身而實現三維構造。即使在圖13所示的行動電話方面，關於主要的構成部分，也可以適用TSV技術。
＜太陽能電池＞
參閱圖16及圖17，為了進行與矽基板11背面(和光射入面相反側)的p+ 半導體層14P及n+ 半導體層14n的電性連接，形成於矽基板11背面的鈍化膜126被去除成所希望的圖案形狀，配合鈍化膜126被去除的部分，在p+ 半導體層14P上形成p電極接點15p，並在n+ 半導體層14n上形成n電極接點15p。此外，在鈍化膜126及n電極接點15n之上形成n金屬化配線12n，並在鈍化膜126及p電極接點15p之上形成p金屬化配線12p。p金屬化配線12p及n金屬化配線12n主要是收集太陽能電池元件上所產生的電流的電極，此等金屬化配線被形成作為交叉指形(interdigital)電極。於在一片矽基板11上排列多數個太陽能電池元件的情況下，可使p金屬化配線12p及n金屬化配線12n之任一方擔任作為連接太陽能電池元件間的匯流排電極的角色。
此處，p金屬化配線12p包含金屬化層121p、及絕緣層122p。金屬化層121p含有高熔點金屬成分與低熔點金屬成分。高熔點金屬成分及低熔點金屬成分互相擴散接合。絕緣層122p係和金屬化層121p同時形成，構成覆蓋金屬化層121p外面的保護膜。
n金屬化配線12n也同樣，包含金屬化層121n、及絕緣層122n。金屬化層121n含有高熔點金屬成分與低熔點金屬成分。高熔點金屬成分及低熔點金屬成分互相擴散接合，構成金屬化層121n。絕緣層122n係和金屬化層121n同時形成，構成覆蓋金屬化層121n外面的保護膜。關於其形成方法，如已述。
其次，參閱圖18，在設於矽基板11一面的鈍化膜126上形成和n+ 半導體層14n電性連接的n電極接點15n、及和p+ 半導體層14P電性連接的p電極接點15p。在n電極接點15n及鈍化膜126之上形成n金屬化配線12n，再以覆蓋n金屬化配線12n的表面並露出p電極接點15p的表面之方式形成p金屬化配線12p。
n金屬化配線12n的金屬化層121n含有高熔點金屬成分與低熔點金屬成分，高熔點金屬成分及低熔點金屬成分互相擴散接合。絕緣層122n係和金屬化層121n同時形成，覆蓋金屬化層121n的外面。金屬化層121n連接於n電極接點15n。
p金屬化配線12p的金屬化層121p含有高熔點金屬成分與低熔點金屬成分，高熔點金屬成分及低熔點金屬成分互相擴散接合。絕緣層122p係和金屬化層121p同時形成，構成覆蓋金屬化層121p外面的保護膜。金屬化層121p連接於p電極接點15p。在基板11的太陽光射入面上附著有防止反射膜129。
藉由上述結構，可得到具有導電性、電氣化學穩定性、耐氧化性、填充性、緊密性、機械及物理強度佳並且對於基板的接著力及密合力高的高品質及高可靠性的金屬化層121p、121n之太陽能電池，此由已述即可清楚知道。而且，此本發明的效果在就連太陽能電池被設置在沙漠等自然環境嚴酷的場所時，也經得起其大幅的溫度變動，可使其長期間穩定地動作這一方面是極為有用的。
關於本發明的金屬化配線不僅可以適用於圖示的太陽能電池，也可以適用於其他類型的太陽能電池。例如，在太陽光射入側有ITO等的透明電極之太陽能電池形成透明電極的情況、或在色素增感型太陽能電池形成電極的情況等。
＜太陽光發電裝置＞
參閱圖19，圖示了使用太陽能電池的太陽光發電裝置6。圖示的太陽光發電裝置係將由太陽能電池61輸出的直流電力利用電力轉換裝置62轉換為交流，將所轉換的交流電力經過配電裝置63供應給負載65，並將剩餘電力供應給商用交流系統7。電力轉換裝置62及配電裝置63為控制裝置64所控制。太陽能電池61係集合了多數個圖16～圖18所示的太陽能電池的電池。
＜發光二極體＞
其次，參閱圖20，圖示了關於本發明的發光二極體。圖20所例示的發光二極體含有發光元件14、n金屬化配線(第1金屬化配線)12n、及p金屬化配線(第2金屬化配線)12p。發光元件14層積於透明結晶基板161上。透明結晶基板161係以藍寶石等構成，表面為光射出面，發光元件14層積於和透明結晶基板161的光射出面相反側的另一面上。
發光元件14係在層積於透明結晶基板161上的緩衝層162之上形成有n型半導體層14n，在n型半導體層14n之上經由活性層14a而層積有p型半導體層14p的構造。位於透明結晶基板161之側的n型半導體層14n具有不與p型半導體層14p重疊的部分164，此部分164的階差為金屬導電層165所掩埋。
n金屬化配線12n連接於n型半導體層14n，p金屬化配線12p連接於p型半導體層14p。n金屬化配線12n包含金屬化層121n與絕緣層122n，金屬化層121n與金屬導電層165的表面接合。p金屬化配線12p的金屬化層121p設於和n金屬化配線12n同側之面上，經由反射膜163而連接於p型半導體層14p。
在金屬化層121n及金屬化層121p上連接貫穿支持基板11及絕緣層122n、122p的第1及第2貫穿電極17NT、17PT。
n金屬化配線12n係使用包含絕緣樹脂與金屬成分的同一導電糊所同時形成。金屬成分含有高熔點金屬成分與低熔點金屬成分，高熔點金屬成分及低熔點金屬成分互相擴散接合而構成金屬化層121n。絕緣層122n係由絕緣樹脂構成，覆蓋金屬化層121n的外面。金屬化層121n連接於n電極接點15n。
p金屬化配線12p也是使用包含絕緣樹脂與金屬成分的同一導電糊所同時形成。金屬成分含有高熔點金屬成分與低熔點金屬成分，高熔點金屬成分124及低熔點金屬成分123互相擴散接合而構成金屬化層121p。絕緣層122p係由絕緣樹脂構成，構成覆蓋金屬化層121p外面的保護膜。
很清楚的，藉由上述結構，可得到具有導電性、電氣化學穩定性、耐氧化性、填充性、緊密性、機械及物理強度佳並且對於基板的接著力及密合力高的高品質及高可靠性的金屬化層121p、121n之發光二極體。
再者，關於本發明的金屬化配線不僅可以適用於圖示的發光二極體，也可以適用於其他類型的發光二極體。例如，在光射出側有ITO等的透明電極之發光二極體方面形成透明電極的情況等。
＜發光裝置、照明裝置或號誌燈＞
參閱圖21，圖示了具有m個發光二極體LED1～LEDm的發光裝置。發光二極體LED1～LEDm顯示於圖20，含有發光元件14、n金屬化配線(第1金屬化配線)12n、及p金屬化配線(第2金屬化配線)12p。發光二極體LED1～LEDm的具體構造係如參閱圖20所詳細說明者。發光二極體LED1～LEDm可以單行或複數行配置。此外，在發光二極體LED1～LEDm方面，基板可以共用。再者，可以是R、G、B的發光二極體的排列，也可以是排列單色光的發光二極體。
圖21所示的發光裝置既可以也用作照明裝置，也可以用作交通號誌的號誌燈。至此的說明中，很清楚的，此等發光裝置、照明裝置或號誌燈為高品質且可靠性高。
＜液晶顯示器＞
圖22為顯示液晶顯示器的圖，係組合液晶面板8與背光9的構造。背光9係將圖20所示的m個發光二極體LED1～LEDm排列成行列狀。此液晶顯示器為高品質且可靠性高從至此的說明中是很清楚的。
雖然本發明係就其較佳實施例特別顯示及敘述，但顯然熟練本技術之人在不脫離本發明之精神、範圍及教義內，於形態及細節中可進行各種變更。
2．．．外裝體
4．．．周邊裝置
6．．．太陽光發電裝置
7．．．商用交流系統
8．．．液晶面板
9．．．背光
11．．．基板
12．．．金屬化配線
12A．．．配線
12B1．．．CPU匯流排
12B2．．．記憶體匯流排
12B3、12B4．．．內部匯流排
12p．．．p金屬化配線
12n．．．n金屬化配線
13．．．端子電極
14．．．電子零件
14A．．．第1晶片零件
14B．．．第2晶片零件
14C．．．第3晶片零件
14P．．．p+ 半導體層
15p．．．p電極接點
14n．．．n+ 半導體層
15n．．．n電極接點
17NT．．．第1貫穿電極
17PT．．．第2貫穿電極
61．．．太陽能電池
62．．．電力轉換裝置
63．．．配電裝置
65．．．供應給負載
121 121p．．．金屬化層
122．．．絕緣層
122 122p．．．絕緣層
123．．．低熔點金屬成分
124．．．高熔點金屬成分
125．．．Cu膜
126．．．鈍化膜
IC140．．．收發信
141．．．CPU
142．．．快取記憶體
143．．．主記憶體
144．．．晶片組
145．．．圖形控制器
146．．．硬碟控制器
147．．．數位基帶
154．．．天線
圖1為顯示關於本發明的電子機器之一例的圖。
圖2為顯示用於圖1所示的電子機器之金屬化配線的一部分之剖面圖。
圖3為圖2的3-3線剖面圖。
圖4為用於圖1所示的電子機器之金屬化配線的別的位置的剖面圖。
圖5為顯示金屬化配線形成用導電糊的圖。
圖6為顯示圖5所示的導電糊的塗布狀態之圖。
圖7為顯示金屬化配線形成用導電糊之他例的圖。
圖8為顯示用於關於本發明的電子機器之金屬化配線的別例的剖面圖。
圖9為圖8的9-9線剖面圖。
圖10為關於本發明的電子機器之金屬化配線的剖面照片。
圖11為比較例的金屬化配線的剖面照片。
圖12為顯示關於本發明的電子機器之一例的電腦結構的圖。
圖13為顯示關於本發明的電子機器之他例的行動電話結構的圖。
圖14為顯示關於本發明的電子機器之一例的積層電子裝置的圖。
圖15為顯示圖14所示的積層電子裝置之製程的圖。
圖16為關於本發明的電子機器之他例的太陽能電池的平面圖。
圖17為圖16所示的太陽能電池的底面圖(和光射入側相反側)。
圖18為顯示太陽能電池之別例的剖面圖。
圖19為圖16～圖18所示的太陽光發電裝置的方塊圖。
圖20為關於本發明的電子機器之他例的發光二極體的剖面圖。
圖21為顯示使用圖20所示的發光二極體之發光裝置、照明裝置或號誌燈的圖。
圖22為使用圖20所示的發光二極體作為背光的液晶顯示器的部分剖面圖。
11．．．基板
12．．．金屬化配線
121．．．金屬化層
122．．．絕緣層

Claims (12)

  1. 一種電子機器，其係含有基板與電子零件，其中，該基板具有金屬化配線；該金屬化配線包含金屬化層、及絕緣層；該金屬化層含有高熔點金屬成分與低熔點金屬成分，該高熔點金屬成分及該低熔點金屬成分互相擴散接合；該絕緣層係和該金屬化層同時形成，覆蓋該金屬化層的外面；該電子零件電性連接於該金屬化層。
  2. 如申請專利範圍第1項之電子機器，其中該高熔點金屬成分含有由Ag、Cu、Au、Pt、Ti、Zn、Al、Fe、Si或Ni之群中所選擇的至少一種；該低熔點金屬成分含有由Sn、In、Bi或Ga之群中所選擇的至少一種。
  3. 如申請專利範圍第1項之電子機器，其中該金屬化配線形成於金屬膜之上，該金屬化層附著於該金屬膜之上。
  4. 如申請專利範圍第1項之電子機器，其係由電腦、行動資訊機器、電腦周邊終端裝置、OA機器、通信機器、業務用資訊終端-自動辨識裝置、汽車電子機器、產業用機械、娛樂機器、音響機器、錄放影機器或家庭用電氣機器之群中所選擇的至少一種。
  5. 一種電子零件，其係層積有複數個晶片零件，其中，該複數個晶片零件係由金屬化配線所接合； 該金屬化配線包含金屬化層、及絕緣層；該金屬化層含有高熔點金屬成分與低熔點金屬成分，該高熔點金屬成分及該低熔點金屬成分互相擴散接合；該絕緣層係和該金屬化層同時形成，覆蓋該金屬化層的外面；該晶片零件之端子電極電性連接於該金屬化層。
  6. 一種太陽能電池，其係含有半導體基板、第1金屬化配線、及第2金屬化配線，其中，該半導體基板具有n型半導體層及p型半導體層；該第1金屬化配線連接於該n型半導體層；該第2金屬化配線連接於該p型半導體層；該第1金屬化配線及該第2金屬化配線各自包含金屬化層、及絕緣層；該金屬化層含有高熔點金屬成分與低熔點金屬成分，該高熔點金屬成分及該低熔點金屬成分互相擴散接合；該絕緣層係和該金屬化層同時形成，覆蓋該金屬化層的外面。
  7. 一種太陽光發電裝置，其係含有太陽能電池，其中，該太陽能電池含有半導體基板、第1金屬化配線、及第2金屬化配線；該半導體基板具有該n型半導體層及該p型半導體層；該第1金屬化配線連接於該n型半導體層； 該第2金屬化配線連接於該p型半導體層；該第1金屬化配線及該第2金屬化配線各自包含金屬化層、及絕緣層；該金屬化層含有高熔點金屬成分與低熔點金屬成分，該高熔點金屬成分及該低熔點金屬成分互相擴散接合；該絕緣層係和該金屬化層同時形成，覆蓋該金屬化層的外面。
  8. 一種發光二極體，其係含有發光元件、第1金屬化配線、及第2金屬化配線，其中，該發光元件包含層積有n型半導體層與p型半導體層的構造；該第1金屬化配線連接於該n型半導體層；該第2金屬化配線連接於該p型半導體層；該第1金屬化配線及該第2金屬化配線各自包含金屬化層、及絕緣層；該金屬化層含有高熔點金屬成分與低熔點金屬成分，該高熔點金屬成分及該低熔點金屬成分互相擴散接合；該絕緣層係和該金屬化層同時形成，覆蓋該金屬化層的外面。
  9. 一種發光裝置，其係具有發光二極體，其中，該發光二極體含有發光元件、第1金屬化配線、及第2金屬化配線；該發光元件包含層積有n型半導體層與p型半導體 層的構造；該第1金屬化配線連接於該n型半導體層；該第2金屬化配線連接於該p型半導體層；該第1金屬化配線及該第2金屬化配線各自包含金屬化層、及絕緣層；該金屬化層含有高熔點金屬成分與低熔點金屬成分，該高熔點金屬成分及該低熔點金屬成分互相擴散接合；該絕緣層係和該金屬化層同時形成，覆蓋該金屬化層的外面。
  10. 一種照明裝置，其係具有發光二極體，其中，該發光二極體含有發光元件、第1金屬化配線、及第2金屬化配線；該發光元件包含層積有n型半導體層與p型半導體層的構造；該第1金屬化配線連接於該n型半導體層；該第2金屬化配線連接於該p型半導體層；該第1金屬化配線及該第2金屬化配線各自包含金屬化層、及絕緣層；該金屬化層含有高熔點金屬成分與低熔點金屬成分，該高熔點金屬成分及該低熔點金屬成分互相擴散接合；該絕緣層係和該金屬化層同時形成，覆蓋該金屬化層的外面。
  11. 一種號誌燈，其係具有發光二極體，其中， 該發光二極體含有發光元件、第1金屬化配線、及第2金屬化配線；該發光元件包含層積有n型半導體層與p型半導體層的構造；該第1金屬化配線連接於該n型半導體層；該第2金屬化配線連接於該p型半導體層；該第1金屬化配線及該第2金屬化配線各自包含金屬化層、及絕緣層；該金屬化層含有高熔點金屬成分與低熔點金屬成分，該高熔點金屬成分及該低熔點金屬成分互相擴散接合；該絕緣層係和該金屬化層同時形成，覆蓋該金屬化層的外面。
  12. 一種液晶顯示器，其係含有液晶面板、及背光，其中，該背光係照射該液晶面板，且排列有複數個發光二極體而成；該發光二極體含有發光元件、第1金屬化配線、及第2金屬化配線；該發光元件包含層積有n型半導體層與p型半導體層的構造；該第1金屬化配線連接於該n型半導體層；該第2金屬化配線連接於該p型半導體層；該第1金屬化配線及該第2金屬化配線各自包含金屬化層、及絕緣層； 該金屬化層含有高熔點金屬成分與低熔點金屬成分，該高熔點金屬成分及該低熔點金屬成分互相擴散接合；該絕緣層係和該金屬化層同時形成，覆蓋該金屬化層的外面。
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