JP5124693B1 - 電子機器 - Google Patents
電子機器 Download PDFInfo
- Publication number
- JP5124693B1 JP5124693B1 JP2012098837A JP2012098837A JP5124693B1 JP 5124693 B1 JP5124693 B1 JP 5124693B1 JP 2012098837 A JP2012098837 A JP 2012098837A JP 2012098837 A JP2012098837 A JP 2012098837A JP 5124693 B1 JP5124693 B1 JP 5124693B1
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- Prior art keywords
- melting point
- point metal
- metallized
- metal component
- synthetic resin
- Prior art date
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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Abstract
【解決手段】基板11は、メタライズ配線12を有している。メタライズ配線12は、メタライズ層121と、合成樹脂膜122とを含んでいる。メタライズ層121は、高融点金属成分と低融点金属成分とを含み、高融点金属成分及び低融点金属成分が互いに拡散接合している。合成樹脂膜122は、メタライズ層121の表面を覆い、膜厚が5nm〜1000nmの範囲にある。
【選択図】図2
Description
性が銀ペーストには及ばず、また保存・安定性にも欠点があった。
タライズ層の表面を覆い、膜厚が5nm〜1000nmの範囲にある。
(a)耐酸化性、導電性、電気化学的安定性、充填性、緻密性、機械的・物理的強度に優れ、しかも基板に対する接着力・密着力の高い高品質・高信頼度のメタライズ配線を有する電子機器を提供することができる。
(b)メタライズ配線に外部導体や電子部品を接続する際、耐酸化性を確保しつつ、両者間の電気的導通を確実に確保し得る電気機器を提供することができる。
まず、図7を参照すると、第1のチップ部品14Aと、第2のチップ部品14Bと、第3のチップ部品14Cとを積層した積層電子装置が図示されている。第1のチップ部品14A及び第3のチップ部品14Cは、例えばたコンピュータにおいて、メイン・メモリのチップ及びそれに接続されるロジックICチップ等である。第2のチップ部品14Bは、例えばインターポーザであり、メイン・メモリ・チップを構成する第1のチップ部品14Aと、ロジックICチップを構成する第3のチップ部品14Cとの間にあって、両者間に所定の配線を形成するものである。第2のチップ部品14Bと第3のチップ部品14Cとの間、及び、第2のチップ部品14Bと第1のチップ部品14Aとの間には、所定のパターンを有するメタライズ配線12が形成されている。メタライズ配線12には、第1のチップ部品14Aの端子電極13及び第2のチップ部品14Bの端子電極13が接続されている。第1のチップ部品14Aと第2のチップ部品14Bとの間、及び、第2のチップ部品14Bと第3のチップ部品14Cとの間には、絶縁層132が設けられている。
有する積層電子装置が得られる。
図8及び図9を参照すると、シリコン基板11の裏面(光入射面とは反対側)のp+半導体層14pおよびn+半導体層14nとの電気的接続を行なうために、シリコン基板11の裏面に形成されたパッシベーション膜126が所望のパターン形状に除去され、パッシベーション膜126が除去された部分に合わせて、p+半導体層14p上にp電極コンタクト15pが形成されるとともに、n+半導体層14n上にn電極コンタクト15pが形成される。また、パッシベーション膜126及びn電極コンタクト15nの上に、メタ
ライズ配線12nが形成されるとともに、パッシベーション膜126及びp電極コンタクト15pの上にメタライズ配線12pが形成される。メタライズ配線12pおよびメタライズ配線12nは、主に太陽電池セルに発生した電流を収集する電極であり、これらは、インター・デジタル電極として形成されている。一枚のシリコン基板11上に、多数の太陽電池セルを配列してゆく場合には、メタライズ配線12pおよびメタライズ配線12nの何れか一方に、太陽電池セル間を接続するバス電極としての役割を担わせることができる。
次に、図10を参照すると、本発明に係る発光ダイオードが図示されている。図10に例示された発光ダイオードは、発光素子140と、nメタライズ配線(第1メタライズ配線)12nと、pメタライズ配線(第2メタライズ配線)12pとを含んでいる。発光素子140は、透明結晶基板161に積層されている。透明結晶基板161は、サファイヤ等で構成されたもので、表面が光出射面であり、発光素子140は透明結晶基板161の光出射面とは反対側の他面に積層されている。
イズ層121p、121nと、第1及び第2貫通電極17NT、17PTとの間に残存したとしても、5nm〜1000nmの範囲にある膜厚の合成樹脂膜122p、122nであれば、トンネル効果等を期待することもできるから、両者間の電気的導通を確保することができる。接続部分の外側は、合成樹脂膜122p、122nによって覆われるから、合成樹脂膜122p、122nによる酸化防止機能が損なわれることがない。即ち、本発明によれば、メタライズ層121p、121nに対する第1及び第2貫通電極17NT、17PTの電気的接続の信頼性が高く、しかも、メタライズ層121p、121nに対する酸化防止機能を有するメタライズ配線12p、12nを実現することができる。
図11を参照すると、m個の発光ダイオードLED1〜LEDmを有する発光装置が図示されている。発光ダイオードLED1〜LEDmは、図10に示したものであって、発光素子140と、nメタライズ配線(第1メタライズ配線)12nと、pメタライズ配線(第2メタライズ配線)12pとを含んでいる。発光ダイオードLED1〜LEDmの具体的な構造は、図10を参照して詳説したとおりである。発光ダイオードLED1〜LEDmは、単列、又は、複数列配置してもよい。また、基板は、発光ダイオードLED1〜LEDmにおいて、共通のものであってもよい。更に、R、G、Bの発光ダイオードの配列であってもよいし、単色光の発光ダイオードを配列したものであってもよい。
図12は、液晶ディスプレイを示す図で、液晶パネル8とバックライト9とを組み合わせた構造となっている。バックライト9は、図11に示したm個の発光ダイオードLED1〜LEDmを、行列状に整列したものである。この液晶ディスプレイが、高品質で、信頼度が高いものであることは、これまでの説明から明らかである。
12 メタライズ配線
121 メタライズ層
122 合成樹脂膜
14 電子部品
Claims (4)
- 基板と、電子部品とを含む電子機器であって、
前記基板は、メタライズ配線を有しており、
前記メタライズ配線は、メタライズ層と、合成樹脂膜とを含んでおり、
前記メタライズ層は、高融点金属成分と低融点金属成分とを含み、前記高融点金属成分及び前記低融点金属成分が互いに拡散接合し、前記基板の表面に付着しており、
前記合成樹脂膜は、前記メタライズ層と同時に形成され、前記メタライズ層の表面を覆い、膜厚が5nm〜1000nmの範囲にあり、
前記電子部品は、前記メタライズ層に電気的に接続されている。 - 請求項1に記載された電子機器であって、前記合成樹脂膜は、膜厚が5nm〜500nmの範囲にある。
- 請求項1又は2に記載された電子機器であって、前記高融点金属成分及び前記低融点金属成分は、ナノコンポジット構造を有する。
- 請求項1乃至3の何れかに記載された電子機器であって、コンピュータ、モバイル情報機器、コンピュータ周辺端末装置、OA機器、通信機器、業務用情報端末・自動認識装置、カーエレクトロニクス機器、産業用機械、エンターテインメント機器、音響機器、映像機器又は家庭用電気機器の群から選択された少なくとも一種である。
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JP2012098837A JP5124693B1 (ja) | 2012-04-24 | 2012-04-24 | 電子機器 |
US13/859,175 US20130277850A1 (en) | 2012-04-24 | 2013-04-09 | Electronic device |
SG2013026984A SG194295A1 (en) | 2012-04-24 | 2013-04-10 | Electronic device |
EP13275090.2A EP2657962A1 (en) | 2012-04-24 | 2013-04-16 | Electronic device with a metallisation layer having a high- and a low-melting-point component diffusion-bonded together and a synthetic resin layer covering the metallisation layer |
KR1020130043756A KR101355748B1 (ko) | 2012-04-24 | 2013-04-19 | 전자기기 |
TW102113877A TWI529853B (zh) | 2012-04-24 | 2013-04-19 | 電子機器 |
CN2013101444077A CN103378051A (zh) | 2012-04-24 | 2013-04-24 | 电子设备 |
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Cited By (2)
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EP2839904A1 (en) * | 2013-08-21 | 2015-02-25 | Napra Co., Ltd. | Functional material |
US9293416B2 (en) | 2012-08-29 | 2016-03-22 | Napra Co., Ltd. | Functional material |
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TWI529853B (zh) | 2016-04-11 |
EP2657962A1 (en) | 2013-10-30 |
US20130277850A1 (en) | 2013-10-24 |
SG194295A1 (en) | 2013-11-29 |
KR20130119872A (ko) | 2013-11-01 |
TW201401437A (zh) | 2014-01-01 |
KR101355748B1 (ko) | 2014-01-27 |
JP2013229376A (ja) | 2013-11-07 |
CN103378051A (zh) | 2013-10-30 |
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