TWI529853B - 電子機器 - Google Patents

電子機器 Download PDF

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Publication number
TWI529853B
TWI529853B TW102113877A TW102113877A TWI529853B TW I529853 B TWI529853 B TW I529853B TW 102113877 A TW102113877 A TW 102113877A TW 102113877 A TW102113877 A TW 102113877A TW I529853 B TWI529853 B TW I529853B
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Taiwan
Prior art keywords
point metal
melting point
metal component
synthetic resin
component
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TW102113877A
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English (en)
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TW201401437A (zh
Inventor
關根重信
關根由莉奈
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納普拉有限公司
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Publication of TW201401437A publication Critical patent/TW201401437A/zh
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Publication of TWI529853B publication Critical patent/TWI529853B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • H01L21/4814—Conductive parts
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Description

電子機器
本發明係關於電子機器，即應用電子學技術的電器產品。
眾所周知，電子機器係在基板的一面上形成有規定圖案的配線圖案，並在此配線圖案上焊接主動零件或被動零件等電子零件。配線圖案係藉由在預先形成於基板上的Cu箔經塗布蝕刻光阻後，使用光微影步驟對Cu箔圖案化而得。配線圖案中，只在焊接電子零件所需的部分使Cu箔露出，並在基板上形成以熱硬化性環氧樹脂等而構成的焊料光阻皮膜以免在不需要焊接的部分附著焊料。而且，在露出的Cu箔焊接電子零件。
如此，以往的電子機器必須經由覆銅基板的製備、蝕刻光阻塗布步驟、光微影步驟、焊料光阻塗布步驟及零件安裝步驟之多個步驟而製造。因此，在成本降低或提升量產性方面會受限。
亦有採用與上述手法相異之將導電性糊直接網版印刷至基板上的手法。此時所用的導電性糊係為將作為導電成分的金屬粉末或合金粉末分散於有機媒液中者。有機媒劑係包含熱硬化性樹脂或熱可塑性樹脂等樹 脂及溶劑。按照情況，有時會添加第3成分以提升金屬粉末的分散性或確保難燃性。
如此得到的配線圖案成為金屬粉末分散於樹脂中之構成。因此，相較使用金屬導體本身的情況，導電性較差。
於是，為了提升導電性，而考慮使用粒徑較小的金屬粉末並增加填充率。然而，金屬粉末係粒徑愈小愈易凝聚，因此難以在導電性糊中均勻分散。又，相鄰金屬粒子間的接觸部分增加，連接電阻亦相對增加，無法得到與填充率的增加相應之導電性提升的效果。
已知若使用銀粉或Cu粉作為上述金屬粉末，則可得到導電性良好的配線。然而，含有銀粉的導電性糊若在高溫多濕的氣體環境中被施加電場，則有在電路或電極產生稱為遷移的銀之電沉積，且在由配線圖案形成的電極間或配線間產生短路現象的缺點。作為用於防止此遷移的對策手段，已知例如在銀粉的表面塗布防濕塗料或在導電性糊添加氮化合物等腐蝕抑制劑等的手法，但並無法得到充分效果(參照日本特開2001-189107)。又，有為了得到高導電性的導體而必須增加銀粉的添加量，且因為銀粉為高價，所以電子機器亦變得高價之缺點。
又，就含有Cu粉的導電性糊而言，因為加熱硬化後的Cu之氧化性較高，所以空氣中及接著劑中所包含的氧與Cu粉會產生反應，並在其表面形成氧化膜，而使導電性顯著降低。作為該對策，日本特開平5-212579 揭示添加各種添加劑防止Cu粉的氧化且使導電性安定的Cu糊。然而，其導電性不如銀糊，而且在保存‧穩定性方面亦有缺點。
為了改善遷移並得到廉價導電性糊，而提出使用銀鍍敷Cu粉的導電性糊(參照日本特開平7-138549、日本特開平10-134636)。然而，若將銀均勻且較厚地覆膜，有時無法充分得到遷移的改善效果。反之，若較覆地被膜，則為了確保良好的導電性而必須增加導電粉的填充量，結果，有時會產生接著劑成分相對減少所伴隨的黏接力(黏接強度)之降低的問題。
更且，屋外所使用的電子機器，例如太陽能電池，係要求在長期間可承受嚴酷環境變動的耐久性。特別是太陽能電池設置於日照時間長的砂漠等時，有時設置場所的溫度變動幅度會超過100℃。然而，由上述技術形成電極的以往太陽能電池在放置於如此嚴酷的自然環境中時，具有數年左右電極即因氧化而劣化的問題。
作為解決上述問題點的手段，日本特許第4778120揭示使高熔點金屬成分及低熔點金屬成分彼此擴散接合而形成敷金屬層，同時對此敷金屬層藉由合成樹脂膜覆蓋合成樹脂膜的表面之技術。
藉由此技術，可實現具有導電性、電化學穩定性、抗氧化性、填充性、緻密性、機械‧物理強度優異且相對基板之黏接力‧密接力高的高品質‧高可靠度之敷金屬配線的電子機器。
然而，因為為使用絕緣層覆蓋敷金屬層的構 造，所以雖然可得到上述優異效果，但在敷金屬配線上連接電子零件的端子電極時，或連接其他外部導體時，由於連接作業的靈巧性不同，有時導致絕緣層殘留於敷金屬層與端子電極之間，而降低電性連接的可靠性。
為了解決上述課題，本發明之電子機器係包含基板，前述基板係具有敷金屬配線。前述敷金屬配線係包含敷金屬層與合成樹脂膜。前述敷金屬層係包含高熔點金屬成分與低熔點金屬成分，前述高熔點金屬成分及前述低熔點金屬成分彼此擴散接合。前述合成樹脂膜係覆蓋前述敷金屬層的表面，且膜厚在5nm~1000nm的範圍。
如上述，因為高熔點金屬成分及低熔點金屬成分彼此擴散接合，所以可實現具有電化學穩定性、抗氧化性優異且不易產生遷移或氧化膜等的敷金屬層之電子機器。
又，因為藉由高熔點金屬成分及低熔點金屬成分的擴散接合，而形成大致無孔洞或斷線的連續的敷金屬層，所以敷金屬層的填充度與緻密性上升，而可得到具有高導電性且高機械‧物理強度的敷金屬層之電子機器。而且，因為包含高熔點金屬成分與低熔點金屬成分，所以藉由材料的選擇，而可得到具有高導電性的敷金屬層之電子機器。
又，因為合成樹脂膜覆蓋敷金屬層的表面，所以除了可避免敷金屬層的外部損傷，還能夠提升抗氧 化性、耐久性與耐候性。而且，除了敷金屬層本身對於基板的密接力‧黏接力，亦產生由合成樹脂膜所帶來之密接力‧黏接力，因此敷金屬配線整體的密接力‧黏接力會提升。
作為上述作用效果的結合，可得到具有導電性、電化學穩定性、抗氧化性、填充性、緻密性、機械‧物理強度優異且對基板具有高黏接力‧密接力之高品質‧高可靠度的敷金屬配線之電子機器。
更且，合成樹脂膜係以5nm~1000nm的範圍之膜厚覆蓋敷金屬層的表面。若為膜厚在5nm~1000nm之範圍之合成樹脂膜，則藉由在敷金屬配線連接外部導體或電子零件時的熱處理，合成樹脂膜會軟化或流動化而流出到連接區域的外側，或者熔解而燒除。因此，在敷金屬層與外部導體或電子零件之間，合成樹脂膜消失，而外部導體或電子零件與敷金屬層直接連接。假設即使合成樹脂膜殘存於敷金屬層與外部導體或電子零件的端子電極之間，若為膜厚在5nm~1000nm的範圍的合成樹脂膜，則可望有穿隧效應等，因此可確保兩者間的電性導通。連接部分的外側由合成樹脂膜覆蓋，因此不損害由合成樹脂膜所帶來之氧化防止機能。即，若按本發明，則可實現外部導體及電子零件對於敷金屬層之電性連接的可靠性較高，而且針對敷金屬層具有氧化防止機能的敷金屬配線。
若合成樹脂膜薄於5nm，則氧化防止機能降低，若超過1000nm，則作為絕緣膜的性質會強烈顯著出 現。從確保此種氧化防止機能及導電性的觀點來看，合成樹脂膜的理想膜厚之範圍為5nm~500nm的範圍。
合成樹脂膜較佳為擴展到敷金屬層的整個表面且連續又完整地覆蓋該表面之全體，但在合成樹脂膜的膜面內亦可包含露出敷金屬層的露出部分。然而，露出部分的面積係設定為不損害氧化防止機能的範圍。
較佳為合成樹脂膜與敷金屬層同時形成。此時，與不同時形成敷金屬層及樹脂層相異，敷金屬層不接觸空氣。因此，可得到具有不受氧化的高品質敷金屬層之電子機器。
敷金屬配線可形成於Cu膜(Cu箔)等金屬或合金膜上。若在Cu膜上形成由高熔點金屬成分及低熔點金屬成分而構成的敷金屬配線，則可在Cu箔的厚度保持不變的情況下，使敷金屬配線整體的剖面積增大並降低電阻。又，可在將Cu箔保持薄質的情況下，使敷金屬配線整體的剖面積增大並降低電阻。
本發明中，電子機器可包含應用電子學的技術之所有電器製品。本發明揭示其中的電腦、行動電話、積層電子裝置、電子機器、電子零件、太陽能電池、發光二極體、發光裝置、照明裝置、信號燈及液晶顯示器。此等雖由具體名稱指定，但在作為應用電子學技術的電器製品方面，係包含於本發明所說的電子機器之範疇。
如上述，若按本發明，則可得到如下效果。
(a)可提供一種具有抗氧化性、導電性、電化學穩定性、填充性、緻密性、機械‧物理強度優異且對基板具有高黏接力‧密接力之高品質‧高可靠度的敷金屬配線之電子機器。
(b)可提供一種在將外部導體或電子零件連接至敷金屬配線時，可確實確保抗氧化性並確實確保兩者間的電性導通之電器。
2‧‧‧外裝體
8‧‧‧液晶面板
9‧‧‧背光燈
11‧‧‧基板
12‧‧‧敷金屬配線
12n‧‧‧敷金屬配線
12p‧‧‧敷金屬配線
13‧‧‧端子電極
14‧‧‧參照符號
14A‧‧‧第1晶片零件
14a‧‧‧活性層
14B‧‧‧第2晶片零件
14C‧‧‧第3晶片零件
14n‧‧‧n型半導體
14p‧‧‧p型半導體
15n‧‧‧n電極接點
15p‧‧‧p電極接點
17NT‧‧‧第1貫通電極
17PT‧‧‧第2貫通電極
121‧‧‧敷金屬層
121n‧‧‧敷金屬層
121p‧‧‧敷金屬層
122‧‧‧合成樹脂膜
122n‧‧‧合成樹脂膜
122p‧‧‧合成樹脂膜
123‧‧‧低熔點金屬成分
124‧‧‧高熔點金屬成分
125‧‧‧金屬膜
126‧‧‧鈍化膜
132‧‧‧絕緣層
140‧‧‧發光元件
141‧‧‧電子零件
142‧‧‧電子零件
143‧‧‧電子零件
144‧‧‧電子零件
145‧‧‧電子零件
146‧‧‧電子零件
161‧‧‧透明結晶基板
162‧‧‧緩衝層
163‧‧‧反射膜
164‧‧‧不重複的部分
165‧‧‧金屬導電層
B1‧‧‧露出部分
B2‧‧‧露出部分
LED1‧‧‧發光二極體
LED2‧‧‧發光二極體
LED3‧‧‧發光二極體
LEDm‧‧‧發光二極體
第1圖為表示本發明之電子機器的一例之圖。
第2圖為表示第1圖所示的電子機器所用之敷金屬配線的一部分之剖面圖。
第3圖為表示第1圖所示的電子機器所用之敷金屬配線的其他位置之剖面圖。
第4圖為表示敷金屬配線形成用導電糊之圖。
第5圖為表示第4圖所示之導電糊的塗布狀態之圖。
第6圖為表示本發明的電子機器所用之敷金屬配線的其他例之剖面圖。
第7圖為表示作為本發明的電子機器之一例的積層電子裝置之圖。
第8圖為表示作為本發明的電子機器之其他例的太陽能電池之俯視圖。
第9圖為第8圖所示的太陽能電池之底面圖(光入射側與相反側)。
第10圖為表示作為本發明的電子機器之其他例的發 光二極體之剖面圖。
第11圖為表示使用第10圖所示之發光二極體的發光裝置、照明裝置或信號燈之圖。
第12圖為表示以第11圖所示的發光二極體為背光燈而使用的液晶顯示器之部分剖面圖。
參照第1圖，本發明之電子機器係包含基板11與電子零件141~146。此等通常配置於外裝體2的內部。基板11係具有具備規定圖案的敷金屬配線12。基板11可為有機基板，亦可為無機基板。又，可構成半導體電路的基板可為例如Si基板，亦可單純是絕緣基板。
電子零件141~146係在基板11上電性連接於敷金屬配線12。在第1圖，附加將電子零件141~146作為群組顯示的參照符號14。電子零件141~146之每一者為主動零件、被動零件或彼等的複合零件，其個數、種類、形狀等對應電子機器的機能與設計而變化。電子零件141~146係以取決於電子系統內電子的動作或關於其之力場的方式產生影響，並達成系統所欲達成的機能。電子零件141~146係由敷金屬配線12彼此連接，並構成具有特定機能的電路。電子零件141~146係有個別封裝的情況，以及以積體電路的方式複合封裝並模組化的情況。
更且，本發明之電子機器亦包含如下的電子機器：不明確劃分基板11與電子零件141~146，而基板11承擔作為電子零件141~146的機能之電子機器，例如太陽能電池等。
敷金屬配線12係如第2圖及第3圖所示，包含敷金屬層121與合成樹脂膜122。敷金屬層121係包含低熔點金屬成分123與高熔點金屬成分124，且高熔點金屬成分124及低熔點金屬成分123彼此擴散接合，構成高填充密度之一連串連續的金屬層。高熔點金屬成分124係可包含選自Ag、Cu、Au、Pt、Ti、Zn、Al、Fe、Si或Ni之群組中的至少1種，低熔點金屬成分123係可包含選自Sn、In、Bi或Ga的群組中之至少1種。
合成樹脂膜122係以5nm~100nm的範圍之膜厚覆蓋敷金屬層121的表面。若合成樹脂膜122薄於5nm，則氧化防止機能降低，若超過1000nm，則作為絕緣膜的性質會強烈顯現。從確保氧化防止機能及導電性的觀點來看，合成樹脂膜122之較佳的膜厚之範圍為5nm~500nm的範圍。
合成樹脂膜122係不只敷金屬層121的表面，亦可連續覆蓋線寬方向的兩側面及長度方向的端面。電子零件141~146如第3圖所示，以其端子電極13穿過合成樹脂膜122且深入其下側的敷金屬層121的方式連接。
構成合成樹脂膜122的樹脂可由包含熱硬化性樹脂或熱可塑製樹脂者構成。使用熱硬化性樹脂時，其硬化點較佳為高於低熔點金屬成分123的熔點，且低於高熔點金屬成分124的熔點。
樹脂較佳為包含選自環氧樹脂、丙烯酸樹脂或酚樹脂中之至少1種。作為用於糊化的溶劑，可使用丁基卡必醇、丁基卡必醇丙酸酯、丁基賽路蘇、甲基異丁 基酮、甲苯或二甲苯等眾所周知的有機溶媒。
合成樹脂膜122較理想為擴展到敷金屬層121的整個表面，且連續完全地覆蓋其整個表面，但可在其一部分包含露出敷金屬層121的露出部分B1、B2。敷金屬層121係包含高熔點金屬成分124與低熔點金屬成分123，因此於例如使低熔點金屬微粒子123熔解且與高熔點金屬微粒子124擴散接合時，有時高熔點金屬微粒子124不熔解而保持微粒子狀態。此時，敷金屬層121的表面可能成為高熔點金屬微粒子124突出的凸部與低熔點金屬微粒子123熔解的凹部交錯之複雜的凹凸面。結果，合成樹脂膜122非完整覆蓋敷金屬層121的表面之構造，特別在高熔點金屬微粒子124突出的凸部分容易產生露出敷金屬層121的露出部分B1、B2。露出部分B1、B2的面積設定為不損害氧化防止機能的範圍。藉由調整合成樹脂與低熔點金屬成分123及高熔點金屬成分124的組成比例等而可做到如上述般的設定。
如上述，敷金屬層121係包含高熔點金屬成分124與低熔點金屬成分123，高熔點金屬成分124及低熔點金屬成分123彼此擴散接合，因此可得到下述的作用效果。
首先，因為高熔點金屬成分124及低熔點金屬成分123彼此擴散接合，所以可實現具有電化學穩定性與抗氧化性優異的敷金屬層121之電子機器。
例如，使用Ag作為熔點金屬成分時，在敷金屬層121，藉由Ag與低熔點金屬成分123之間產生擴散接 合，而使其電化學穩定性增加並確實防止Ag的遷移。使用Cu作為高熔點金屬成分124時，Cu與低熔點金屬成分123之間產生擴散接合而防止Cu的氧化。
再者，藉由高熔點金屬成分124及低熔點金屬成分123的擴散接合而形成無孔洞或斷線的連續的敷金屬層121，因此敷金屬層121的填充度與緻密性提升且導電性提高，同時機械‧物理強度增加。然而，因為包含高熔點金屬成分124與低熔點金屬成分123，所以可藉由該材料的選擇而得到具有高導電性的敷金屬層121之電子機器。
在本發明，更且，合成樹脂膜122覆蓋敷金屬層121的表面，因此除了可避免敷金屬層121的外部損傷，還可提升抗氧化性。更且，耐久性與耐候性亦提升。而且，除了敷金屬層121本身對基板的密接力‧黏接力之外，亦產生合成樹脂膜122所帶來之密接力‧黏接力，因此整體敷金屬配線12的密接力‧黏接力提升。
合成樹脂膜122係以5nm~1000nm的範圍之膜厚覆蓋敷金屬層121的表面。若為膜厚在5nm~1000nm的範圍的合成樹脂膜122，則藉由在敷金屬配線12連接電子零件141~146的端子電極13時的熱處理，合成樹脂膜122會軟化或流動化而流出到連接區域的外側或熔解而燒除。因此，敷金屬層121與電子零件141~146的端子電極13之間，合成樹脂膜消失，且電子零件141~146的端子電極13會直接連接到敷金屬層121。假設即使合成樹脂膜122殘存於敷金屬層121與電子零件141~146的端子電極13之 間，若為膜厚在5nm~1000nm的範圍的合成樹脂膜122，則可望有穿隧效應等，因此可確保兩者間的電性導通。連接部分的外側係由合成樹脂膜122覆蓋，因此不損害由合成樹脂膜122帶來的之氧化防止機能。即，若按本發明，則可實現電子零件141~146的端子電極13對敷金屬層121的電性連接之可靠性較高，而且針對敷金屬層121具有氧化防止機能之敷金屬配線12。
又，若為上述膜厚，則容易以化學或機械方式部分地除去合成樹脂膜122，且將外部導體或電子零件141~146的端子電極13直接接合於敷金屬層121。
較佳為合成樹脂膜122與敷金屬層121同時形成。此時，與敷金屬層121和樹脂層不同時形成者相異，敷金屬層121不接觸空氣。因此，可得到具有不受氧化的高品質敷金屬層121之電子機器。
敷金屬層121及合成樹脂膜122可使用包含樹脂、金屬成分與溶劑的導電糊而同時形成。
如第4圖所示，敷金屬層121及合成樹脂膜122係藉由如下方式而獲得：將包含金屬成分與樹脂122的導電糊，使用網版印刷與凹版印刷技術等，而如第5圖所示以形成規定圖案的方式，予以塗布於基板11並實施熱處理再使其產生擴散接合，上述金屬成分係由作為金屬微粒子的高熔點金屬成分124及作為金屬微粒子的低熔點金屬成分123而構成。因此，不需要以往必須的覆銅基板之製備、蝕刻光阻塗布步驟及光微影步驟，即可得到顯著的成本降低及量產性提升的效果。金屬微粒子可為球 狀，亦可為扁平狀。為奈米複合構造者特別理想。奈米複合構造係指使結晶或非結晶的奈米粒子混合或生成於母材之構造。
使擴散接合產生的手法包含2個手法。一個是利用低熔點金屬材料所具有的低熔點之方法，另一個是利用奈米大小效果，特別是量子大小效果的方法。前者的情況，將低熔點金屬成分123以材料具有的低熔點熔解，並與高熔點金屬成分124擴散接合。後者的情況，作為高熔點金屬材料，使用粒徑或厚度為縮小成例如100nm以下的高熔點金屬微粒子124，並利用奈米大小效果，以低於高熔點金屬材料本身具有的熔點(初期熔點)之溫度使其熔解並產生擴散接合。
上述2個手法中，利用低熔點金屬材料具有的低熔點時，較佳為在熱處理中以高於低熔點金屬成分123的熔點且低於高熔點金屬成分124的熔點之溫度，例如100~300℃加熱。藉由此熱處理，可得到低熔點金屬成分123熔解，高熔點金屬成分124及低熔點金屬成分123凝聚，且高熔點金屬成分124彼此之間由熔解的低熔點金屬成分123填補的填充構造，同時在低熔點金屬成分123與高熔點金屬成分124之間產生擴散接合(金屬間結合)。藉由此擴散接合而形成有不含有樹脂的敷金屬層121。敷金屬層121由於其比重差而沉降至較樹脂層122更靠下側。藉此形成有以合成樹脂膜122覆蓋附著於基板11的敷金屬層121之表面(表面及側面)的敷金屬配線12。合成樹脂膜122係構成覆蓋敷金屬層121的表面(表面、側面)之合成 樹脂膜122，因此不需要其他步驟來塗布合成樹脂膜122。
又，使用Ag作為高熔點金屬成分124時，在敷金屬層121中，Ag與低熔點金屬成分123之間亦產生擴散接合，更且，在整體導電性組成物合成樹脂膜122被覆敷金屬層121。藉由此構成可確實防止Ag的遷移。同樣地，使用Cu作為高熔點金屬成分124時，Cu與低熔點金屬成分123之間亦產生擴散接合，且敷金屬層121進一步由合成樹脂膜122所被覆，因此可防止Cu的氧化。
低熔點金屬微粒子123及高熔點金屬微粒子124可為球狀，亦可為扁平狀。若為扁平狀，作為一例，最大厚度為50nm以下且最大直徑為厚度的2倍以上者屬適當。
作為導電糊的其他例，可使用以低熔點金屬膜123覆蓋高熔點金屬微粒子124的表面之金屬微粒子，或者亦可與此相反而使用以高熔點金屬膜覆蓋低熔點金屬微粒子123的表面之金屬微粒子。
以高熔點金屬成分124及低熔點金屬成分123而構成的敷金屬配線12如第6圖所示，係可形成於Cu膜等金屬膜125上。若在Cu膜125(Cu箔)上形成以高熔點金屬成分124及低熔點金屬成分123而構成的敷金屬層121，則可在Cu膜125之厚度保持不變的情況下，使整體敷金屬配線12的剖面積增大並降低電阻。或者，藉由減薄Cu膜125的厚度，同時將由附著於其上之由高熔點金屬成分124及低熔點金屬成分123而成的敷金屬層121形成為較厚， 而可增大整體敷金屬配線12的剖面積並降低電阻。
本發明之電子機器可包含應用電子學的技術之所有電器製品。若代表性地予以例示，則例如為電腦、行動資訊機器、電腦周邊終端裝置、OA機器、通訊機器、業務用資訊終端/自動識別裝置、汽車電子機器、產業用機械、娛樂機器、音響機器、影像放映機器或家庭用電器等。雖然不是用來限定本發明者，但作為其具體例，可舉出例如液晶顯示器、個人電腦、汽車導航系統、行動電話、積層電子裝置、太陽能電池、太陽光發電裝置、發光二極體、發光裝置、照明裝置、信號燈、遊戲機、數位相機、電視接收機、DVD播放器、電子記事本、電子辭典、硬碟記錄器、行動資訊終端(PDA)、錄影機、印表機、電漿顯示器、收音機等。由於受限於紙本篇幅，因此以積層電子裝置、太陽能電池、發光二極體、發光裝置、照明裝置、信號燈及液晶顯示器為上述電子機器的一例加以說明。
1.積層電子裝置
首先，參照第7圖圖示將第1晶片零件14A、第2晶片零件14B、第3晶片零件14C積層的積層電子裝置。第1晶片零件14A及第3晶片零件14C係為例如電腦中的主記憶體晶片及與其連接的邏輯IC晶片等。第2晶片零件14B係為例如插入物(interposer)，且在構成主記憶體晶片的第1晶片零件14A與構成邏輯IC晶片的第3晶片零件14C之間，於兩者間形成規定配線。第2晶片零件14B與第3晶片零件14C之間及第2晶片零件14B與第1晶片零件14A之間， 形成有具有規定圖案的敷金屬配線12。第1晶片零件14A的端子電極13及第2晶片零件14B的端子電極13與敷金屬配線12連接。第1晶片零件14A與第2晶片零件14B之間及第2晶片零件14B與第3晶片零件14C之間設有絕緣層132。
敷金屬配線12為與本發明相關者，係包含敷金屬層121與合成樹脂膜(參照第2圖、第3圖等)。敷金屬層121係包含高熔點金屬成分124與低熔點金屬成分123，高熔點金屬成分124及低熔點金屬成分123彼此擴散接合，而形成一連串連續的敷金屬層121。合成樹脂膜122係與敷金屬層121同時形成，並以5nm~1000nm的範圍之厚度覆蓋敷金屬層121的表面。
藉此，可得到具有導電性、電化學穩定性、抗氧化性、填充性、緻密性、機械‧物理強度優異，而且基板相互間的黏接力高之高品質‧高可靠度的敷金屬配線12之積層電子裝置。
合成樹脂膜122係以5nm~1000nm的範圍之膜厚覆蓋敷金屬層121之表面，因此可確保合成樹脂膜122對於敷金屬層121之作為氧化防止膜的機能，同時使其發揮作為具有實質導電性的膜之作用。若為膜厚在5nm~1000nm的範圍的合成樹脂膜122，則藉由在敷金屬配線12連接第1晶片零件14A、第2晶片零件14B及第3晶片零件14C時的熱處理，合成樹脂膜122軟化或流動化而流出到連接區域的外側或熔解而燒除。因此，在敷金屬層121與第1晶片零件14A、第2晶片零件14B及第3晶片零 件14C的端子電極之間，合成樹脂膜消失，第1晶片零件14A、第2晶片零件14B及第3晶片零件14C的端子電極直接連接敷金屬層121。假設即使合成樹脂膜122殘存於敷金屬層121、第1晶片零件14A、第2晶片零件14B及第3晶片零件14C的端子電極之間，但若為膜厚在5nm~1000nm的範圍的合成樹脂膜122，則可望有穿隧效應等，因此可確保兩者間的電性導通。連接部分的外側由合成樹脂膜122覆蓋，因此不損害由合成樹脂膜122所帶來之氧化防止機能。即，若按本發明，則可實現第1晶片零件14A、第2晶片零件14B及第3晶片零件14C的端子電極對敷金屬層121之電性連接的可靠性較高，而且針對敷金屬層121具有氧化防止機能的敷金屬配線12。
又，若為上述膜厚，則易於以化學或機械方式部分地除去合成樹脂膜122，且易於將第1晶片零件14A、第2晶片零件14B及第3晶片零件14C的端子電極直接接合於敷金屬層121。
若第2晶片零件14B為插入物時，較佳為應用所謂的TSV(Through Silicon Via)技術，並在厚度方向形成貫通電極。藉此，實現三維電路配置構造，並藉由與線寬的微細化相異之手法，而可有助於大容量化、傳送速度的高速化與高頻特性的改善等。
在實現TSV構造時，擔負中心的作用之縱導體較佳為由流動性導電材填充法所形成之導體。為了採用流動性導電材填充法形成縱導體(貫通電極)，需要例如預先將流動性導電材填充於在基板開孔的微細孔內， 在對填充的流動性導電材施加使用按壓板的按壓、噴射射出壓或轉壓的狀態下，而使其冷卻、硬化。若藉由此流動性導電材填充法，則相較鍍敷等，在可極短時間形成無空洞等的高品質縱導體(貫通電極)。因此，藉由與線寬的微細化相異之手法，而實現圖謀大容量化、傳送速度的高速化、高頻特性的改善等之高品質的三維構造之電子機器。
作為其他形態，亦可在記憶體或邏輯IC等電子零件141~146本身中，應用TSV技術而實現三維構造。
2.太陽能電池
參照第8圖及第9圖，為了進行矽基板11的背面(與光入射面之相反的那一側)之p+半導體層14p及n+半導體層14n的電性連接，而將形成於矽基板11的背面之鈍化膜126除去成期望的圖案形狀，並對應鈍化膜126被除去之部分，在p+半導體層14p上形成有p電極接點15p，同時在n+半導體層14n上形成有n電極接點15p。又，在鈍化膜126及n電極接點15n上形成有敷金屬配線12n，同時在鈍化膜126及p電極接點15p上形成有敷金屬配線12p。敷金屬配線12p及敷金屬配線12n主要為收集太陽能電池單元所產生的電流之電極，此等係形成為叉指電極。在一片矽基板11上排列多個太陽能電池單元時，可使敷金屬配線12p及敷金屬配線12n之任一者擔負作為連接太陽能電池單元間的匯流排電極之作用。
在此，如第2圖~第3圖所示，敷金屬配線12p係包含敷金屬層121p與合成樹脂膜122p。敷金屬層121p 係包含高熔點金屬成分124與低熔點金屬成分123。高熔點金屬成分124及低熔點金屬成分123彼此擴散接合。合成樹脂膜122p係與敷金屬層121p同時形成，並以5nm~1000nm的範圍之厚度覆蓋敷金屬層121p的表面。
敷金屬配線12n亦同樣地包含敷金屬層121n與合成樹脂膜122n。敷金屬層121n係包含高熔點金屬成分124與低熔點金屬成分123。高熔點金屬成分124及低熔點金屬成分123彼此擴散接合並構成敷金屬層121n。合成樹脂膜122n係與敷金屬層121n同時形成，並以5nm~1000nm的範圍之膜厚覆蓋敷金屬層121n的表面。該形成方法係如上述。
合成樹脂膜122p、122n係以5nm~1000nm的範圍之膜厚覆蓋敷金屬配線12p、12n的表面，因此可確保合成樹脂膜122p、122n對於敷金屬層121p、121n之作為氧化防止膜的機能，同時亦可發揮作為具有實質導電性之膜的作用。若為膜厚在5nm~1000nm的範圍的合成樹脂膜122p、122n，則藉由在敷金屬配線12p、12n連接外部導體(未圖示)時的熱處理，合成樹脂膜122p、122n會軟化或流動化而流出到連接區域的外側，或者熔解而燒除。因此，在敷金屬層121p、121n與外部導體之間，合成樹脂膜消失，外部導體直接連接到敷金屬層121p、121n。假設即使合成樹脂膜122p、122n殘存於敷金屬層121p、121n與外部導體之間，若為膜厚在5nm~1000nm的範圍的合成樹脂膜122p、122n，則可望有穿隧效應等，因此可確保兩者間的電性導通。因為連接部分的外側由合成 樹脂膜122p、122n覆蓋，所以不損害由合成樹脂膜122p、122n所帶來之氧化防止機能。即，若按本發明，則可實現外部導體對敷金屬層121p、121n之電性連接的可靠性較高，而且針對敷金屬層121p、121n具有氧化防止機能的敷金屬配線12p、12n。
又，若按上述膜厚，則容易以化學或機械方式部分地除去合成樹脂膜122p、122n，且將外部導體直接接觸敷金屬層121p、121n。
本發明之敷金屬配線12不只應用於圖示的太陽能電池，亦應用於其他類型的太陽能電池。例如，在太陽光入射側具有ITO等透明電極的太陽能電池中形成透明電極的情況或在色素增感型太陽能電池中形成電極的情況等。
3.發光二極體
再者，參照第10圖圖示本發明之發光二極體。第10圖所例示的發光二極體係包含發光元件140、n敷金屬配線(第1敷金屬配線)12n與p敷金屬配線(第2敷金屬配線)12p。發光元件140係積層於透明結晶基板161。透明結晶基板161係由藍寶石等構成，其表面為光出射面，發光元件140係在與透明結晶基板161的光射出面為相反側的其他面積層。
發光元件140的構造如下：在積層於透明結晶基板161的緩衝層162上形成n型半導體層14n，並在n型半導體層14n上夾著活性層14a而積層p型半導體層14p。位於透明結晶基板161側的n型半導體層14n具有與P型半導 體層14p不重複的部分164，此部分164的階差由金屬導電層165填補。
敷金屬配線12n係連接於n型半導體層14n，敷金屬配線12p係連接於p型半導體層14p。敷金屬配線12n係包含敷金屬層121n與合成樹脂膜122n，敷金屬層121n係接合於金屬導電層165的表面。敷金屬配線12p的敷金屬層121p係設於與敷金屬配線12n相同側之面，並夾著反射膜163而連接於p型半導體層14p。
在敷金屬層121n及敷金屬層121p，連接有貫通支持基板11及合成樹脂膜122n、122p的第1及第2貫通電極17NT、17PT。
敷金屬配線12n係使用包含樹脂與金屬成分的同一導電糊而同時形成。金屬成分係包含高熔點金屬成分124與低熔點金屬成分123，高熔點金屬成分124及低熔點金屬成分123彼此擴散接合，並構成敷金屬層121n。合成樹脂膜122n係包含樹脂，並以5nm~1000nm的範圍之膜厚覆蓋敷金屬層121n的表面。敷金屬層121n係連接到n電極接點15n。
敷金屬配線12p亦使用包含樹脂與金屬成分之同一導電糊而同時形成。金屬成分係包含高熔點金屬成分124與低熔點金屬成分123，高熔點金屬成分124及低熔點金屬成分123彼此擴散接合，並構成敷金屬層121p。合成樹脂膜122p係以5nm~1000nm的範圍之膜厚覆蓋敷金屬層121p的表面。參照符號16為絕緣層。
若按上述構成，則可得到具有導電性、電化 學穩定性、抗氧化性、填充性、緻密性、機械‧物理強度優異且相對基板之黏接力‧密接力高的高品質‧高可靠度之敷金屬層121p、121n的發光二極體。
合成樹脂膜122n、122p係以5nm~1000nm的範圍之膜厚覆蓋敷金屬層121n、121p的表面，因此可確保合成樹脂膜122n、122p對於敷金屬層121p、121n之作為氧化防止膜的機能，同時亦可發揮作為具有實質導電性之膜的作用。若為膜厚在5nm~1000nm的範圍的合成樹脂膜122p、122n，則藉由在敷金屬配線12p、12n連接第1及第2貫通電極17NT、17PT時的熱處理，合成樹脂膜122p、122n會軟化或流動化而流出到連接區域的外側，或者熔解而燒除。因此，在敷金屬層121p、121n與第1及第2貫通電極17NT、17PT之間，合成樹脂膜消失，第1及第2貫通電極17NT、17PT直接連接到敷金屬層121p、121n。假設即使合成樹脂膜122p、122n殘存於敷金屬層121p、121n與第1及第2貫通電極17NT、17PT之間，若為膜厚在5nm~1000nm的範圍的合成樹脂膜122p、122n，則可望有穿隧效應等，因此可確保兩者間的電性導通。因為連接部分的外側由合成樹脂膜122p、122n覆蓋，所以不損害由合成樹脂膜122p、122n所帶來之氧化防止機能。即，若按本發明，則可實現第1及第2貫通電極17NT、17PT對敷金屬層121p、121n之電性連接的可靠性較高，而且針對敷金屬層121p、121n具有氧化防止機能的敷金屬配線12p、12n。
又，若為上述膜厚，則容易以化學或機械方 式部分地除去合成樹脂膜122p、122n，且將第1及第2貫通電極17NT、17PT直接接觸敷金屬層121p、121n。
尚且，本發明之敷金屬配線12不只應用於圖示的發光二極體，亦應用於其他類型的發光二極體。例如，在光射出側具有ITO等透明電極的發光二極體池中形成透明電極的情況等。
4.發光裝置、照明裝置或信號燈
參照第11圖圖示具有m個發光二極體LED1~LEDm的發光裝置。發光二極體LED1~LEDm係如第10圖所示，包含發光元件140、n敷金屬配線(第1敷金屬配線)12n、p敷金屬配線(第2敷金屬配線)12p。發光二極體LED1~LEDm的具體構造係如參照第10圖詳細說明。發光二極體LED1~LEDm可為單列或複數列配置。又，在發光二極體LED1~LEDm中基板可為共通。更且，可為R、G、B的發光二極體之排列，亦可為排列單色光的發光二極體。
第11圖所示的發光裝置可作為照明裝置使用，亦可作為交通訊號的信號燈使用。此等發光裝置、照明裝置或信號燈為高品質且高可靠性，可由目前為止的說明瞭解。
5.液晶顯示器
第12圖為表示液晶顯示器之圖，係為組合液晶面板8與背光燈9之構造。背光燈9係為將第11圖所示的m個發光二極體LED1~LEDm排列成行列狀。此液晶顯示器為高品質且高可靠度，可由目前為止的說明瞭解。
11‧‧‧基板
12‧‧‧敷金屬配線
13‧‧‧端子電極
121‧‧‧敷金屬層
122‧‧‧合成樹脂膜
123‧‧‧低熔點金屬成分
124‧‧‧高熔點金屬成分
141‧‧‧電子零件
142‧‧‧電子零件
143‧‧‧電子零件
144‧‧‧電子零件
145‧‧‧電子零件
146‧‧‧電子零件
B1‧‧‧露出部分

Claims (8)

  1. 一種電子機器，係包含基板與電子零件，前述基板係具有敷金屬配線，前述敷金屬配線係包含敷金屬層與合成樹脂膜，前述敷金屬層係包含高熔點金屬成分與低熔點金屬成分，前述高熔點金屬成分及前述低熔點金屬成分彼此擴散接合並附著於前述基板的表面，前述合成樹脂膜係與前述敷金屬層同時形成並覆蓋前述敷金屬層的表面，且其膜厚在5nm~1000nm的範圍，但不包含100nm以上的範圍，前述電子零件係電性連接於前述敷金屬層。
  2. 如申請專利範圍第1項之電子機器，其中前述合成樹脂膜之膜厚在5nm~500nm的範圍，但不包含100nm以上的範圍。
  3. 如申請專利範圍第1項之電子機器，其中前述高熔點金屬成分及前述低熔點金屬成分係具有奈米複合構造。
  4. 如申請專利範圍第2項之電子機器，其中前述高熔點金屬成分及前述低熔點金屬成分係具有奈米複合構造。
  5. 如申請專利範圍第1項之電子機器，其係選自電腦、行動資訊機器、電腦周邊終端裝置、OA機器、通訊機器、業務用資訊終端/自動識別裝置、汽車電子機器、產業用機械、娛樂機器、音響機器、影像放映機器或家庭用電器之群組中的至少一種。
  6. 如申請專利範圍第2項之電子機器，其係選自電腦、行動資訊機器、電腦周邊終端裝置、OA機器、通訊機器 、業務用資訊終端/自動識別裝置、汽車電子機器、產業用機械、娛樂機器、音響機器、影像放映機器或家庭用電器之群組中的至少一種。
  7. 如申請專利範圍第3項之電子機器，其係選自電腦、行動資訊機器、電腦周邊終端裝置、OA機器、通訊機器、業務用資訊終端/自動識別裝置、汽車電子機器、產業用機械、娛樂機器、音響機器、影像放映機器或家庭用電器之群組中的至少一種。
  8. 如申請專利範圍第4項之電子機器，其係選自電腦、行動資訊機器、電腦周邊終端裝置、OA機器、通訊機器、業務用資訊終端/自動識別裝置、汽車電子機器、產業用機械、娛樂機器、音響機器、影像放映機器或家庭用電器之群組中的至少一種。
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