I254466 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種基板結構，尤指一種供發光二極 體模組使用之基板結構者。 【先前技術】 按，發光二極體(Light Emitting Diode)主要為一種利 _ 用DI-V族或Π-IV族化合物半導體材料及元件結構變化 所構成的發光元件。由於發光二極體其發光的原理及結構 與傳統鶴絲燈泡有所不同，相對於鴿絲燈泡易於耗費電 力、散發大量熱量、不耐碰撞及使用壽命較短等缺點，發 光一極體則具有體積小、壽命長、驅動電壓低、反應速度 ，及耐震性佳等特性，而廣泛被應用在可攜式通訊裝置、 父通號誌、、戶外顯示看板、汽車光源及照明等電子產品領 域。 鲁 但隨著製造技術的精進，發光二極體經由不斷的研發 改善，逐漸地加強其發光的效率，使其發光亮度能夠做進 一步的提升，藉以擴大並適應於各種產品上之需求。換言 ^，為了增高發光二極體亮度，除了藉由解決其外在的封 袈問題外，亦需要設計使發光二極體具有較高的電功率及 更強之工作電流，以期能生產出具有高亮度的發光二極 體但由於在提高其電功率及工作電流之下，發光二極體 將會相對產生出較多之熱量，使得其易於因過熱而影響其 性能之表現，甚裘造成發光二極體之毀損。 3 1254466 請分別參閱第1圖及第2圖所示，係習知的發光二極 體模組之基板結構之剖面示意圖。為了解決發光二極體運 作時所產生之熱量，習用的發光二極體模組Γ主要係設 置於一金屬基板10’上，以便於發光二極體20’可以藉由 金屬基板10’提供散熱之功效，其中該金屬基板10’係由 具較佳導熱性之金屬材料所製成；再者，該金屬基板10’ 表面主要係藉由壓合加工之方式，分別將一絕緣層12’及 一導電層14’逐一疊置於金屬基板10’表面，且金屬基板 10’表面在進行壓合加工前尚須先進行極化處理；當絕緣 層12’及導電層14’壓合於金屬基板10’表面後，需再藉由 蝕刻加工之方式，將金屬基板10’表面上不需使用之導電 層14’予以去除，使其裸露出下層之絕緣層12’，僅保留 所需的導電層14’以作為導電線路；最後，為設置發光二 極體20’需再將前述所裸露出之絕緣層12’予以加工去除 後，藉以裸露出位於絕緣層12’下方的金屬基板10’表面， 使得位於發光二極體20’底部之封裝部22’得以貼附並設 置於該金屬基板10’之表面，而發光二極體20’之外電極 引腳24’則經由銲固方式設置於該導電層14’上。如第2 圖所示，由此使得發光二極體20’所產生之熱量一部份得 經由外電極引腳24’直接散逸於空氣中，另一部份的熱量 則可藉由熱傳導之方式，經由傳導至金屬基板10’後散逸 至空氣中，以解決發光二極體20’之工作溫度有過高之情 形。 惟，由於習用的基板結構主要係先由透過壓合加工的 1254466 方式，將整片的絕緣層及導電 上，芒猶诱矾屢人电嘈宜置於金屬基板的表面 上纪種透過反合加工的方式 耗費大詈的雷力，品好在在加工的過程中需要 仆产理亦π媒基板表面更需要在事先進行椏 化處理，亦同樣需要耗費大量 -.I -7- ^ 电刀，再者，金眉暴板表 面上不舄要的導電層及絕緣層部八 甘他r*掩AA 士 1丄人 刀必頊透過银刻力口工或I254466 IX. Description of the Invention: [Technical Field] The present invention relates to a substrate structure, and more particularly to a substrate structure for use in a light-emitting diode module. [Prior Art] Light Emitting Diode is mainly a light-emitting element composed of a DI-V group or a Group-IV compound semiconductor material and a change in element structure. Since the principle and structure of the light-emitting diode are different from those of the conventional crane light bulb, the light-emitting diode has the disadvantages of being easy to consume electric power, emitting a large amount of heat, being resistant to collision and having a short service life. Small in size, long life, low driving voltage, fast response, and good shock resistance, it is widely used in portable communication devices, parent communication, outdoor display panels, automotive light sources and lighting. Lu, with the improvement of manufacturing technology, the LED has been gradually improved by the continuous research and development, and its luminous efficiency can be further improved, so as to expand and adapt to the needs of various products. In other words, in order to increase the brightness of the light-emitting diode, in addition to solving the external sealing problem, it is also necessary to design the light-emitting diode to have higher electric power and stronger working current, so as to produce high. Brightness of the light-emitting diode, but due to the increase of its electric power and operating current, the light-emitting diode will relatively generate more heat, making it easy to affect its performance due to overheating, and even cause the light-emitting diode Body damage. 3 1254466 Please refer to FIG. 1 and FIG. 2 respectively for a schematic cross-sectional view of a substrate structure of a conventional light-emitting diode module. In order to solve the heat generated by the operation of the LED, the conventional LED module is mainly disposed on a metal substrate 10', so that the LED 20' can be cooled by the metal substrate 10'. The metal substrate 10' is made of a metal material having a better thermal conductivity; further, the surface of the metal substrate 10' is mainly formed by pressing processing, and an insulating layer 12' and A conductive layer 14' is stacked one on another on the surface of the metal substrate 10', and the surface of the metal substrate 10' is subjected to polarization treatment before being subjected to the pressing process; when the insulating layer 12' and the conductive layer 14' are pressed against the metal substrate After the 10' surface, the conductive layer 14' which is not needed on the surface of the metal substrate 10' is removed by etching to expose the underlying insulating layer 12', leaving only the desired conductive layer. 14' as a conductive line; finally, in order to provide the light-emitting diode 20', the exposed insulating layer 12' is processed and removed, thereby exposing the surface of the metal substrate 10' under the insulating layer 12'. The package portion 22 ′ at the bottom of the light-emitting diode 20 ′ is attached and disposed on the surface of the metal substrate 10 ′, and the electrode lead 24 ′ outside the light-emitting diode 20 ′ is disposed on the solder joint. On the conductive layer 14'. As shown in FIG. 2, the heat generated by the LED 20' is partially dissipated directly into the air via the external electrode pin 24', and the other portion of the heat can be transferred by heat. After being conducted to the metal substrate 10', it is dissipated into the air to solve the problem that the operating temperature of the light-emitting diode 20' is too high. However, since the conventional substrate structure is mainly made of the 1254466 method through the embossing process, the entire insulating layer and the conductive layer are placed on the surface of the metal substrate. The processing method consumes a lot of lightning force, and the product needs to be produced in the process of processing. The surface of the π-media substrate needs to be deuterated in advance, and it also takes a lot of cost. -I -7- ^ Electric knife In addition, the conductive layer and the insulating layer on the surface of the golden eyebrow blast board are not the most important ones.
其働:方式去除，但事實上，在實際的生產過輕中可 以㈣^屬基板上所需要保留作為導電線路的導電層， 以及在¥電層與金屬基板間作為絕緣作用的絕緣廣，僅佔 金屬基板全部表面積約3〇%而已，而其餘大約補的導 電層及絕緣層則都被加工所去除；因此，由上述說明可知 習用的發光二極體模組之基板結構在製造過程中，不但會 耗費大量的能源及浪費其所需的製造原料，使得製造成本 不易降低，且在其製造過程中所使用的蝕刻加工技術，更 品以具有強酸性或強鹼性的化學溶劑來進行加工，使得在 加工的過程中易於產生有毒氣體及具有強酸性或強鹼性 的有毒廢液，進而造成環境上之污染，並不符合環保的概 念0 【發明内容】 本發明之主要目的，在於提供一種發光二極體模組之 基板結構，可以簡化其加工製程，大幅降低製程過程中所 需耗費的大量能源，並降低對環境的污染。 本發明之另一目的，在於提供一種發光二極體模組之 基板結構，其金屬基板表面上之導電線路的建構可以達到 1254466 及其目的，茲附以圖式及較佳具體實施例之詳細說明如 后·· 請參閱第3圖所示，係為本發明第—實施例之發光二 極體模組之基板結構示意圖。如圖所示，本發明之發光二 極體模組1之基板結構具有一高散熱性之金屬基板1〇， 並在該金屬基板10上表面形成有複數的隔離層，該隔 離層係直接依所需之導電線路的路徑而佛設，而且在該隔 離層12表面上佈設有一導電層14，使得導電層14在金 屬基板10表面得以構成一導電線路之佈局。 請參閱第4圖所示’係為本發明第一實施例之發光二 極體模組之結構示意圖。該發光二極體模組丨設有一個以 上之發光一極體20 ’該發光二極體20係附著設置於裸露 的金屬基板10表面’该發光一極體20係屬於表面黏著型 發光二極體，且藉由發光二極體20底部所設之散熱導材 封裝體22直接貼设於金屬基板1〇之表面，里封裝體22 外側所設置之二外電極引腳24則分別電氣連結於與其相 對應之導電層14，藉以組成發光二極體模組工。 本發明中所述之金屬基板10係由具有良好導熱性之 銅或銘合金板等金屬板材所製成，而該隔離層12主要係 以具财南溫樹脂直接在金屬基板1 〇表面上塗佈而構成， 耐高溫樹脂則係以聚亞醯胺(Polyimide)或BT樹脂 (Bismaleimidem 與 Triagzine Resin monomer 之聚合物)/玉署 氧樹脂(EPOXY)混合膠等材質為較佳之選擇，或以在功能 上具有等效性質的導熱膠直接塗佈構成，該隔離層12亦 1254466 可以組成成分為50%〜9〇%樹脂及10%〜50%石墨粉所混合 構成’或以組合成分為5〇%〜9〇%樹脂及1〇%〜50%氮化硼 所混合構成，使得隔離層12在金屬基板1〇及導電層14 間能夠產生電路絕緣之效果。The other way: the method is removed, but in fact, in actual production, the conductive layer can be retained as a conductive line on the substrate, and the insulation between the electricity layer and the metal substrate is widely used as insulation. The total surface area of the metal substrate is about 3%, and the remaining conductive layers and insulating layers are removed by processing; therefore, the above description shows that the substrate structure of the conventional LED module is in the manufacturing process. Not only will it consume a lot of energy and waste the required manufacturing materials, the manufacturing cost is not easy to reduce, and the etching processing technology used in the manufacturing process is processed by a chemical solvent having strong acidity or strong alkalinity. Therefore, it is easy to generate toxic gas and toxic waste liquid with strong acidity or strong alkalinity during processing, thereby causing environmental pollution, and does not conform to the concept of environmental protection. [Invention] The main object of the present invention is to provide The substrate structure of the LED module can simplify the processing process and greatly reduce the large amount of energy required in the process Source and reduce pollution to the environment. Another object of the present invention is to provide a substrate structure of a light-emitting diode module, wherein the conductive line on the surface of the metal substrate can be constructed to reach 1254466 and its purpose, and the drawings and details of the preferred embodiment are attached. The following is a schematic view of the substrate structure of the light-emitting diode module according to the first embodiment of the present invention. As shown in the figure, the substrate structure of the LED module 1 of the present invention has a high heat dissipation metal substrate 1 〇, and a plurality of isolation layers are formed on the upper surface of the metal substrate 10, and the isolation layer is directly A desired conductive path is provided, and a conductive layer 14 is disposed on the surface of the isolation layer 12 such that the conductive layer 14 forms a conductive line on the surface of the metal substrate 10. Please refer to FIG. 4, which is a schematic structural view of a light emitting diode module according to a first embodiment of the present invention. The light-emitting diode module is provided with one or more light-emitting diodes 20'. The light-emitting diodes 20 are attached to the surface of the bare metal substrate 10. The light-emitting diode 20 belongs to a surface-adhesive light-emitting diode. The heat dissipation material package 22 disposed on the bottom of the LED 20 is directly attached to the surface of the metal substrate 1 , and the external electrode pins 24 disposed on the outer side of the package 22 are electrically connected to each other. The conductive layer 14 corresponding thereto is used to form a light-emitting diode module. The metal substrate 10 described in the present invention is made of a metal plate such as a copper or a mother alloy plate having good thermal conductivity, and the separator 12 is mainly coated on the surface of the metal substrate 1 with a resin. The composition is made of cloth, and the high temperature resistant resin is preferably made of polyimide or BT resin (polymer of Bismaleimidem and Triagzine Resin monomer) / jade oxygen resin (EPOXY) mixed rubber, or the like. The thermal conductive adhesive having functional properties is directly coated, and the separator 12 is also composed of a composition of 50% to 9% by weight of resin and 10% to 50% of graphite powder, or a combination of 5〇. The composition of %~9〇% resin and 1%% to 50% boron nitride is mixed, so that the isolation layer 12 can have the effect of circuit insulation between the metal substrate 1 and the conductive layer 14.
另者’該導電層14則係以金屬粉末或導電碳纖維等 具有良好導電性及低阻抗之材料混合構成，例如金、銀、 銅、鐵、錫、鎂、鋁或及其氧化物等微粒金屬元素及氧化 物，並藉由網版印刷方式或直接以塗佈方式建構設置於隔 離層12表面；當然該導電層14另以在功效上同樣具有等 效性負之粉末式導電銀、銅膏或導電銀、銅膠取代，以直 接塗佈的方式設置於隔離層12表面。 同％，為了防止導電層14與金屬基板1〇之間因隔離 層12較薄’使得所形成的隔離間距過近而產生央端放電 放應故本發明之導電層M面積需小於所相對應設置之 隔離層12面積’使得設置在隔離層12表面上之導電層 14邊緣與隔離層12邊緣之間具有-間距d。 由前述說明可知，本發明之金屬基板1〇由於可以 接以塗佈方式，將_層12建構於 ， 隔離層12在金屬基杯10矣& , 饥川衣w 似离基板10表面上所需塗佈的路徑位置及 積’可以依照金屬基板10矣 關你番m "板10表面上所需佈局之導電線路 關位置及形狀而進行加工， 朴 门日守口亥導電層14由於也可 猎由網版印刷或塗你方忒古 / 式直接建構於隔離層12表面， 但可間化以往加工製裎，大氩 Α 大為改善以往需要藉由蝕刻類 $要的隔離層12或導電層14而產生之耗電、教 8 1254466 意圖。 第2圖係習知的發光二極體模組之剖面示意圖。 第3圖係本發明第一實施例之發光二極體模組之基 板結構不意圖。 第4圖係本發明第一實施例之發光二極體模組之結 構示意圖。 第5圖係本發明第二實施例之發光二極體模組之基 板結構示意圖。 【主要元件符號說明】 1， 發光二極體模組 10， 金屬基板 12， 絕緣層 14， 導電層 20， 發光二極體 22， 封裝體 24， 外電極引腳 1 發光二極體模組 10 金屬基板 12 隔離層 12a 上層隔離層 122 通孔 14 導電層 1254466 14a 上層導電層 142 導電體 20 發光二極體 22 封裝體 24 外電極引腳In addition, the conductive layer 14 is composed of a material having good conductivity and low impedance such as metal powder or conductive carbon fiber, such as particulate metal such as gold, silver, copper, iron, tin, magnesium, aluminum or its oxide. The element and the oxide are disposed on the surface of the isolating layer 12 by screen printing or directly by coating; of course, the conductive layer 14 is also equivalent in powdery conductive silver and copper paste. Or conductive silver or copper glue is substituted and disposed on the surface of the isolation layer 12 in a direct coating manner. In the same case, in order to prevent the isolation layer 12 from being thin between the conductive layer 14 and the metal substrate 1 使得 so that the isolation gap formed is too close to generate a central discharge discharge, the area of the conductive layer M of the present invention needs to be smaller than the corresponding The spacer layer 12 is disposed such that the edge of the conductive layer 14 disposed on the surface of the spacer layer 12 and the edge of the spacer layer 12 have a spacing d. It can be seen from the above description that the metal substrate 1 of the present invention can be formed by coating, and the spacer layer 12 is formed on the surface of the substrate 10 in the metal base cup 10 amp & The position and product of the path to be coated can be processed according to the position and shape of the conductive line of the desired layout on the surface of the board 10, and the Pumen Day Shoukouhai conductive layer 14 can also be processed. Hunting is directly applied to the surface of the isolation layer 12 by screen printing or painting. However, it can be used to refine the conventional processing, and the large argon is greatly improved by etching the spacer 12 or conductive. The power consumption generated by layer 14 is taught by 8 1254466. Figure 2 is a schematic cross-sectional view of a conventional light-emitting diode module. Fig. 3 is a schematic view showing the structure of the substrate of the light-emitting diode module of the first embodiment of the present invention. Fig. 4 is a view showing the structure of a light-emitting diode module according to a first embodiment of the present invention. Fig. 5 is a schematic view showing the structure of a substrate of a light-emitting diode module according to a second embodiment of the present invention. [Main component symbol description] 1. Light-emitting diode module 10, metal substrate 12, insulating layer 14, conductive layer 20, light-emitting diode 22, package body 24, external electrode pin 1 light-emitting diode module 10 Metal substrate 12 isolation layer 12a upper isolation layer 122 via 14 conductive layer 1254466 14a upper conductive layer 142 conductor 20 light emitting diode 22 package 24 external electrode lead