JP4963160B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4963160B2
JP4963160B2 JP2004363416A JP2004363416A JP4963160B2 JP 4963160 B2 JP4963160 B2 JP 4963160B2 JP 2004363416 A JP2004363416 A JP 2004363416A JP 2004363416 A JP2004363416 A JP 2004363416A JP 4963160 B2 JP4963160 B2 JP 4963160B2
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JP
Japan
Prior art keywords
wiring
photomask
data
memory
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004363416A
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English (en)
Japanese (ja)
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JP2005203763A (ja
JP2005203763A5 (enExample
Inventor
清 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004363416A priority Critical patent/JP4963160B2/ja
Publication of JP2005203763A publication Critical patent/JP2005203763A/ja
Publication of JP2005203763A5 publication Critical patent/JP2005203763A5/ja
Application granted granted Critical
Publication of JP4963160B2 publication Critical patent/JP4963160B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Read Only Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2004363416A 2003-12-19 2004-12-15 半導体装置 Expired - Fee Related JP4963160B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004363416A JP4963160B2 (ja) 2003-12-19 2004-12-15 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003423841 2003-12-19
JP2003423841 2003-12-19
JP2004363416A JP4963160B2 (ja) 2003-12-19 2004-12-15 半導体装置

Publications (3)

Publication Number Publication Date
JP2005203763A JP2005203763A (ja) 2005-07-28
JP2005203763A5 JP2005203763A5 (enExample) 2007-12-06
JP4963160B2 true JP4963160B2 (ja) 2012-06-27

Family

ID=34829375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004363416A Expired - Fee Related JP4963160B2 (ja) 2003-12-19 2004-12-15 半導体装置

Country Status (1)

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JP (1) JP4963160B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4946438B2 (ja) * 2004-07-06 2012-06-06 コニカミノルタホールディングス株式会社 半導体装置、その製造方法及び電子装置
KR101150996B1 (ko) * 2004-09-24 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP4906076B2 (ja) * 2005-07-29 2012-03-28 株式会社半導体エネルギー研究所 半導体装置
JP5127176B2 (ja) * 2005-07-29 2013-01-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5063084B2 (ja) * 2005-11-09 2012-10-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20070126556A1 (en) * 2005-12-07 2007-06-07 Kovio, Inc. Printed radio frequency identification (RFID) tag using tags-talk-first (TTF) protocol
US20070138462A1 (en) * 2005-12-21 2007-06-21 Palo Alto Research Center Incorporated Electronic device with unique encoding
EP1993781A4 (en) * 2006-02-03 2016-11-09 Semiconductor Energy Lab Co Ltd MANUFACTURING METHOD FOR MEMORY ELEMENT, LASER RADIATION APPARATUS AND LASER RADIATION METHOD
JP5178022B2 (ja) * 2006-02-03 2013-04-10 株式会社半導体エネルギー研究所 記憶素子の作製方法
US8580700B2 (en) 2006-02-17 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7532378B2 (en) 2006-02-21 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, method of laser irradiation, and method for manufacturing semiconductor device
US7541213B2 (en) * 2006-07-21 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2015121298A1 (en) * 2014-02-11 2015-08-20 Imec Vzw Method for customizing thin film electronic circuits
CN119849416B (zh) * 2025-03-19 2025-05-16 河南嵩山实验室产业研究院有限公司洛阳分公司 基于亲和性与对称性的晶圆级芯片布局方法、装置及介质

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244497A (ja) * 1987-03-31 1988-10-11 Texas Instr Japan Ltd 半導体装置
JP2679146B2 (ja) * 1988-09-05 1997-11-19 日本電気株式会社 半導体記憶装置およびその製造方法
JPH0481299U (enExample) * 1990-11-27 1992-07-15
JPH06112436A (ja) * 1992-09-28 1994-04-22 Fujitsu Ltd 半導体装置及びその製造方法
JPH0773689A (ja) * 1993-09-03 1995-03-17 Nec Kyushu Ltd 半導体記憶回路
JPH1022481A (ja) * 1996-07-08 1998-01-23 Toshiba Corp 読み出し専用半導体記憶装置
JP4085459B2 (ja) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 ３次元デバイスの製造方法
JP2003133691A (ja) * 2001-10-22 2003-05-09 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体

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JP2005203763A (ja) 2005-07-28

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