JP2014120542A5 - - Google Patents
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- Publication number
- JP2014120542A5 JP2014120542A5 JP2012272987A JP2012272987A JP2014120542A5 JP 2014120542 A5 JP2014120542 A5 JP 2014120542A5 JP 2012272987 A JP2012272987 A JP 2012272987A JP 2012272987 A JP2012272987 A JP 2012272987A JP 2014120542 A5 JP2014120542 A5 JP 2014120542A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- manufacturing
- semiconductor device
- type semiconductor
- contact formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims description 92
- 238000004519 manufacturing process Methods 0.000 claims description 52
- 230000015572 biosynthetic process Effects 0.000 claims description 44
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims 22
- 229910052751 metal Inorganic materials 0.000 claims 16
- 239000002184 metal Substances 0.000 claims 16
- 229910045601 alloy Inorganic materials 0.000 claims 10
- 239000000956 alloy Substances 0.000 claims 10
- 239000010955 niobium Substances 0.000 claims 8
- 239000010948 rhodium Substances 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 229910052735 hafnium Inorganic materials 0.000 claims 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910008484 TiSi Inorganic materials 0.000 claims 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 4
- 229910052741 iridium Inorganic materials 0.000 claims 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 4
- 229910052758 niobium Inorganic materials 0.000 claims 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 4
- 229910052762 osmium Inorganic materials 0.000 claims 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 4
- 229910052702 rhenium Inorganic materials 0.000 claims 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 4
- 229910052703 rhodium Inorganic materials 0.000 claims 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 4
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 3
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012272987A JP5949516B2 (ja) | 2012-12-14 | 2012-12-14 | 半導体装置の製造方法 |
| US14/105,018 US9123635B2 (en) | 2012-12-14 | 2013-12-12 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012272987A JP5949516B2 (ja) | 2012-12-14 | 2012-12-14 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014120542A JP2014120542A (ja) | 2014-06-30 |
| JP2014120542A5 true JP2014120542A5 (enExample) | 2015-02-05 |
| JP5949516B2 JP5949516B2 (ja) | 2016-07-06 |
Family
ID=50929901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012272987A Active JP5949516B2 (ja) | 2012-12-14 | 2012-12-14 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9123635B2 (enExample) |
| JP (1) | JP5949516B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6007769B2 (ja) * | 2012-12-14 | 2016-10-12 | 豊田合成株式会社 | 半導体装置 |
| JP6369366B2 (ja) * | 2015-03-26 | 2018-08-08 | 豊田合成株式会社 | 半導体装置の製造方法 |
| JP6631853B2 (ja) * | 2015-09-25 | 2020-01-15 | パナソニックＩｐマネジメント株式会社 | 半導体装置 |
| JP6888224B2 (ja) * | 2017-10-16 | 2021-06-16 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2783349B2 (ja) | 1993-07-28 | 1998-08-06 | 日亜化学工業株式会社 | ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法 |
| JP3620926B2 (ja) * | 1995-06-16 | 2005-02-16 | 豊田合成株式会社 | ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子 |
| JP3625377B2 (ja) * | 1998-05-25 | 2005-03-02 | ローム株式会社 | 半導体発光素子 |
| JP4003296B2 (ja) | 1998-06-22 | 2007-11-07 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
| JP4645753B2 (ja) | 2003-02-06 | 2011-03-09 | 株式会社豊田中央研究所 | Ｉｉｉ族窒化物半導体を有する半導体素子 |
| JP4645034B2 (ja) | 2003-02-06 | 2011-03-09 | 株式会社豊田中央研究所 | Ｉｉｉ族窒化物半導体を有する半導体素子 |
| JP2008053449A (ja) | 2006-08-24 | 2008-03-06 | Rohm Co Ltd | 半導体装置およびその製造方法 |
| JP2008205175A (ja) | 2007-02-20 | 2008-09-04 | Rohm Co Ltd | 窒化物半導体素子の製造方法 |
| JP4478175B2 (ja) | 2007-06-26 | 2010-06-09 | 株式会社東芝 | 半導体装置 |
| JP2009094427A (ja) * | 2007-10-12 | 2009-04-30 | Eudyna Devices Inc | 発光素子の製造方法 |
| JP2009117820A (ja) * | 2007-10-16 | 2009-05-28 | Rohm Co Ltd | 窒化物半導体素子および窒化物半導体素子の製造方法 |
| JP5390983B2 (ja) * | 2008-08-08 | 2014-01-15 | 古河電気工業株式会社 | 電界効果トランジスタおよび電界効果トランジスタの製造方法 |
| JP5325534B2 (ja) | 2008-10-29 | 2013-10-23 | 株式会社東芝 | 窒化物半導体素子 |
| JP2010205918A (ja) * | 2009-03-03 | 2010-09-16 | Sumitomo Electric Ind Ltd | パワーデバイスおよびその製造方法 |
| JP5453892B2 (ja) * | 2009-04-15 | 2014-03-26 | トヨタ自動車株式会社 | 窒化物半導体装置 |
| JP5144585B2 (ja) * | 2009-05-08 | 2013-02-13 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
| JP4737471B2 (ja) | 2009-10-08 | 2011-08-03 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
-
2012
- 2012-12-14 JP JP2012272987A patent/JP5949516B2/ja active Active
-
2013
- 2013-12-12 US US14/105,018 patent/US9123635B2/en active Active
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