JP2015115543A5 - - Google Patents
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- Publication number
- JP2015115543A5 JP2015115543A5 JP2013258350A JP2013258350A JP2015115543A5 JP 2015115543 A5 JP2015115543 A5 JP 2015115543A5 JP 2013258350 A JP2013258350 A JP 2013258350A JP 2013258350 A JP2013258350 A JP 2013258350A JP 2015115543 A5 JP2015115543 A5 JP 2015115543A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- current blocking
- blocking layer
- forming
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 40
- 230000000903 blocking effect Effects 0.000 claims 32
- 239000000463 material Substances 0.000 claims 16
- 239000010408 film Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 10
- 238000000137 annealing Methods 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 239000007769 metal material Substances 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013258350A JP6094819B2 (ja) | 2013-12-13 | 2013-12-13 | 半導体発光素子及びその製造方法 |
| TW103131352A TW201526288A (zh) | 2013-12-13 | 2014-09-11 | 半導體發光元件及其製造方法 |
| US14/561,968 US9437778B2 (en) | 2013-12-13 | 2014-12-05 | Semiconductor light-emitting element and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013258350A JP6094819B2 (ja) | 2013-12-13 | 2013-12-13 | 半導体発光素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015115543A JP2015115543A (ja) | 2015-06-22 |
| JP2015115543A5 true JP2015115543A5 (enExample) | 2016-09-23 |
| JP6094819B2 JP6094819B2 (ja) | 2017-03-15 |
Family
ID=53369544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013258350A Active JP6094819B2 (ja) | 2013-12-13 | 2013-12-13 | 半導体発光素子及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9437778B2 (enExample) |
| JP (1) | JP6094819B2 (enExample) |
| TW (1) | TW201526288A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102320790B1 (ko) | 2014-07-25 | 2021-11-03 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 및 그 제조 방법 |
| KR101761835B1 (ko) * | 2015-05-22 | 2017-07-26 | 서울바이오시스 주식회사 | 고효율 발광 다이오드 |
| US9595616B1 (en) * | 2015-12-02 | 2017-03-14 | Sandia Corporation | Vertical III-nitride thin-film power diode |
| KR102554231B1 (ko) * | 2016-06-16 | 2023-07-12 | 서울바이오시스 주식회사 | 전극 구조를 갖는 수직형 발광 다이오드 및 그것을 갖는 발광 다이오드 패키지 |
| JP6824501B2 (ja) * | 2017-02-08 | 2021-02-03 | ウシオ電機株式会社 | 半導体発光素子 |
| US9893254B1 (en) * | 2017-04-20 | 2018-02-13 | High Power Opto. Inc. | Structure of high temperature resistant reflecting layer of light-emitting diode |
| US20190189850A1 (en) * | 2017-12-19 | 2019-06-20 | Epistar Corporation | Light-emitting device |
| DE102019135171A1 (de) * | 2019-12-19 | 2021-06-24 | Rogers Germany Gmbh | Lotmaterial, Verfahren zur Herstellung eines solchen Lotmaterials und Verwendung eines solchen Lotmaterials zur Anbindung einer Metallschicht an eine Keramikschicht |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59125680A (ja) * | 1983-01-06 | 1984-07-20 | Nec Corp | 半導体発光素子 |
| JP2006269912A (ja) * | 2005-03-25 | 2006-10-05 | Matsushita Electric Ind Co Ltd | 発光素子及びその製造方法 |
| CN102047454B (zh) * | 2008-04-16 | 2013-04-10 | Lg伊诺特有限公司 | 发光器件及其制造方法 |
| JP5725927B2 (ja) * | 2010-05-18 | 2015-05-27 | ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． | 高効率発光ダイオード及びその製造方法 |
| EP2439793B1 (en) * | 2010-10-11 | 2016-03-16 | LG Innotek Co., Ltd. | Light emitting device and lighting instrument including the same |
| JP5620846B2 (ja) * | 2011-02-16 | 2014-11-05 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
| EP2528114A3 (en) | 2011-05-23 | 2014-07-09 | LG Innotek Co., Ltd. | Light emitting device, light emitting device package, and light unit |
| JP2013197197A (ja) * | 2012-03-16 | 2013-09-30 | Toshiba Corp | 半導体発光装置及びその製造方法 |
-
2013
- 2013-12-13 JP JP2013258350A patent/JP6094819B2/ja active Active
-
2014
- 2014-09-11 TW TW103131352A patent/TW201526288A/zh unknown
- 2014-12-05 US US14/561,968 patent/US9437778B2/en active Active
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