JP6094819B2 - 半導体発光素子及びその製造方法 - Google Patents

半導体発光素子及びその製造方法 Download PDF

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Publication number
JP6094819B2
JP6094819B2 JP2013258350A JP2013258350A JP6094819B2 JP 6094819 B2 JP6094819 B2 JP 6094819B2 JP 2013258350 A JP2013258350 A JP 2013258350A JP 2013258350 A JP2013258350 A JP 2013258350A JP 6094819 B2 JP6094819 B2 JP 6094819B2
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Japan
Prior art keywords
layer
current blocking
electrode
blocking layer
light emitting
Prior art date
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JP2013258350A
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English (en)
Japanese (ja)
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JP2015115543A (ja
JP2015115543A5 (enExample
Inventor
隆博 井上
隆博 井上
月原　政志
政志 月原
晃平 三好
晃平 三好
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
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Ushio Denki KK
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Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP2013258350A priority Critical patent/JP6094819B2/ja
Priority to TW103131352A priority patent/TW201526288A/zh
Priority to US14/561,968 priority patent/US9437778B2/en
Publication of JP2015115543A publication Critical patent/JP2015115543A/ja
Publication of JP2015115543A5 publication Critical patent/JP2015115543A5/ja
Application granted granted Critical
Publication of JP6094819B2 publication Critical patent/JP6094819B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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JP2013258350A 2013-12-13 2013-12-13 半導体発光素子及びその製造方法 Active JP6094819B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013258350A JP6094819B2 (ja) 2013-12-13 2013-12-13 半導体発光素子及びその製造方法
TW103131352A TW201526288A (zh) 2013-12-13 2014-09-11 半導體發光元件及其製造方法
US14/561,968 US9437778B2 (en) 2013-12-13 2014-12-05 Semiconductor light-emitting element and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013258350A JP6094819B2 (ja) 2013-12-13 2013-12-13 半導体発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2015115543A JP2015115543A (ja) 2015-06-22
JP2015115543A5 JP2015115543A5 (enExample) 2016-09-23
JP6094819B2 true JP6094819B2 (ja) 2017-03-15

Family

ID=53369544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013258350A Active JP6094819B2 (ja) 2013-12-13 2013-12-13 半導体発光素子及びその製造方法

Country Status (3)

Country Link
US (1) US9437778B2 (enExample)
JP (1) JP6094819B2 (enExample)
TW (1) TW201526288A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102320790B1 (ko) 2014-07-25 2021-11-03 서울바이오시스 주식회사 자외선 발광 다이오드 및 그 제조 방법
KR101761835B1 (ko) * 2015-05-22 2017-07-26 서울바이오시스 주식회사 고효율 발광 다이오드
US9595616B1 (en) * 2015-12-02 2017-03-14 Sandia Corporation Vertical III-nitride thin-film power diode
KR102554231B1 (ko) * 2016-06-16 2023-07-12 서울바이오시스 주식회사 전극 구조를 갖는 수직형 발광 다이오드 및 그것을 갖는 발광 다이오드 패키지
JP6824501B2 (ja) * 2017-02-08 2021-02-03 ウシオ電機株式会社 半導体発光素子
US9893254B1 (en) * 2017-04-20 2018-02-13 High Power Opto. Inc. Structure of high temperature resistant reflecting layer of light-emitting diode
US20190189850A1 (en) * 2017-12-19 2019-06-20 Epistar Corporation Light-emitting device
DE102019135171A1 (de) * 2019-12-19 2021-06-24 Rogers Germany Gmbh Lotmaterial, Verfahren zur Herstellung eines solchen Lotmaterials und Verwendung eines solchen Lotmaterials zur Anbindung einer Metallschicht an eine Keramikschicht

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125680A (ja) * 1983-01-06 1984-07-20 Nec Corp 半導体発光素子
JP2006269912A (ja) * 2005-03-25 2006-10-05 Matsushita Electric Ind Co Ltd 発光素子及びその製造方法
CN102047454B (zh) * 2008-04-16 2013-04-10 Lg伊诺特有限公司 发光器件及其制造方法
JP5725927B2 (ja) * 2010-05-18 2015-05-27 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 高効率発光ダイオード及びその製造方法
EP2439793B1 (en) * 2010-10-11 2016-03-16 LG Innotek Co., Ltd. Light emitting device and lighting instrument including the same
JP5620846B2 (ja) * 2011-02-16 2014-11-05 スタンレー電気株式会社 半導体発光装置およびその製造方法
EP2528114A3 (en) 2011-05-23 2014-07-09 LG Innotek Co., Ltd. Light emitting device, light emitting device package, and light unit
JP2013197197A (ja) * 2012-03-16 2013-09-30 Toshiba Corp 半導体発光装置及びその製造方法

Also Published As

Publication number Publication date
TW201526288A (zh) 2015-07-01
US20150171271A1 (en) 2015-06-18
JP2015115543A (ja) 2015-06-22
US9437778B2 (en) 2016-09-06

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