JP2011181961A5 - - Google Patents
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- Publication number
- JP2011181961A5 JP2011181961A5 JP2011128659A JP2011128659A JP2011181961A5 JP 2011181961 A5 JP2011181961 A5 JP 2011181961A5 JP 2011128659 A JP2011128659 A JP 2011128659A JP 2011128659 A JP2011128659 A JP 2011128659A JP 2011181961 A5 JP2011181961 A5 JP 2011181961A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- layer
- nitride
- light emitting
- based light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims 47
- 239000002184 metal Substances 0.000 claims 47
- 150000004767 nitrides Chemical class 0.000 claims 22
- 229910044991 metal oxide Inorganic materials 0.000 claims 14
- 150000004706 metal oxides Chemical class 0.000 claims 14
- 238000005253 cladding Methods 0.000 claims 13
- 238000000034 method Methods 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 7
- 229910052703 rhodium Inorganic materials 0.000 claims 6
- 239000010948 rhodium Substances 0.000 claims 6
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 4
- 239000010941 cobalt Substances 0.000 claims 4
- 229910017052 cobalt Inorganic materials 0.000 claims 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 4
- 229910052741 iridium Inorganic materials 0.000 claims 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 4
- 229910052746 lanthanum Inorganic materials 0.000 claims 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 4
- 229910052763 palladium Inorganic materials 0.000 claims 4
- 229910052697 platinum Inorganic materials 0.000 claims 4
- 229910052702 rhenium Inorganic materials 0.000 claims 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 4
- 229910052707 ruthenium Inorganic materials 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 4
- 229910052718 tin Inorganic materials 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- 229910052725 zinc Inorganic materials 0.000 claims 4
- 239000011701 zinc Substances 0.000 claims 4
- 150000002739 metals Chemical class 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030058841A KR100624411B1 (ko) | 2003-08-25 | 2003-08-25 | 질화물계 발광소자 및 그 제조방법 |
| KR2003-058841 | 2003-08-25 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004245933A Division JP2005072603A (ja) | 2003-08-25 | 2004-08-25 | 窒化物系発光素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011181961A JP2011181961A (ja) | 2011-09-15 |
| JP2011181961A5 true JP2011181961A5 (enExample) | 2012-07-05 |
Family
ID=34101837
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004245933A Pending JP2005072603A (ja) | 2003-08-25 | 2004-08-25 | 窒化物系発光素子及びその製造方法 |
| JP2011128659A Pending JP2011181961A (ja) | 2003-08-25 | 2011-06-08 | 窒化物系発光素子及びその製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004245933A Pending JP2005072603A (ja) | 2003-08-25 | 2004-08-25 | 窒化物系発光素子及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7462877B2 (enExample) |
| EP (1) | EP1511091B1 (enExample) |
| JP (2) | JP2005072603A (enExample) |
| KR (1) | KR100624411B1 (enExample) |
| CN (1) | CN100361324C (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100571816B1 (ko) * | 2003-09-08 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
| KR100647278B1 (ko) | 2003-10-27 | 2006-11-17 | 삼성전자주식회사 | ＩＩＩ - Ｖ 족 ＧａＮ 계 화합물 반도체 및 이에적용되는 ｐ-형 전극 |
| KR100601971B1 (ko) * | 2003-12-22 | 2006-07-18 | 삼성전자주식회사 | 탑에미트형 질화물계 발광소자 및 그 제조방법 |
| KR20050082040A (ko) * | 2004-02-17 | 2005-08-22 | 어드밴스드 에피텍시 테크날리지 | 발광다이오드 제조방법 |
| TWI292631B (en) * | 2005-02-05 | 2008-01-11 | Epistar Corp | Light emitting diode and method of the same |
| EP1750309A3 (en) * | 2005-08-03 | 2009-07-29 | Samsung Electro-mechanics Co., Ltd | Light emitting device having protection element |
| CN1909238B (zh) * | 2005-08-03 | 2010-11-03 | 三星电机株式会社 | 具有保护元件的发光装置及该发光装置的制造方法 |
| JP2007157853A (ja) * | 2005-12-01 | 2007-06-21 | Sony Corp | 半導体発光素子およびその製造方法 |
| JP2007157852A (ja) * | 2005-12-01 | 2007-06-21 | Sony Corp | 半導体発光素子およびその製造方法 |
| US7501295B2 (en) * | 2006-05-25 | 2009-03-10 | Philips Lumileds Lighting Company, Llc | Method of fabricating a reflective electrode for a semiconductor light emitting device |
| JP5197186B2 (ja) | 2008-06-30 | 2013-05-15 | 株式会社東芝 | 半導体発光装置 |
| CN101728451B (zh) * | 2008-10-21 | 2013-10-30 | 展晶科技(深圳)有限公司 | 半导体光电元件 |
| JP5498723B2 (ja) * | 2009-04-10 | 2014-05-21 | スタンレー電気株式会社 | 酸化亜鉛系半導体素子及びその製造方法 |
| JP5845557B2 (ja) * | 2010-03-30 | 2016-01-20 | ソニー株式会社 | 半導体発光素子の製造方法 |
| WO2011125289A1 (ja) * | 2010-04-01 | 2011-10-13 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
| JP4820465B1 (ja) * | 2010-04-02 | 2011-11-24 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
| JP5132739B2 (ja) * | 2010-09-06 | 2013-01-30 | 株式会社東芝 | 半導体素子 |
| WO2012071107A1 (en) * | 2010-11-23 | 2012-05-31 | Qd Vision, Inc. | Device including semiconductor nanocrystals & method |
| JP5646423B2 (ja) * | 2011-09-26 | 2014-12-24 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
| KR102107863B1 (ko) | 2011-11-07 | 2020-05-08 | 루미리즈 홀딩 비.브이. | 더 균일한 주입과 낮은 광손실을 갖는 개선된 p-컨택트 |
| JP2013062535A (ja) * | 2012-12-18 | 2013-04-04 | Toshiba Corp | 半導体発光装置及びその製造方法 |
| KR20140140166A (ko) * | 2013-05-28 | 2014-12-09 | 포항공과대학교 산학협력단 | 발광 다이오드 |
| CN109037200B (zh) * | 2018-07-18 | 2020-06-30 | 易美芯光（北京）科技有限公司 | Led阵列结构及其制备方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3754120B2 (ja) * | 1996-02-27 | 2006-03-08 | 株式会社東芝 | 半導体発光装置 |
| JP3499385B2 (ja) * | 1996-11-02 | 2004-02-23 | 豊田合成株式会社 | ３族窒化物半導体の電極形成方法 |
| JP3737226B2 (ja) * | 1996-12-24 | 2006-01-18 | ローム株式会社 | 半導体発光素子 |
| JPH10308533A (ja) * | 1997-05-09 | 1998-11-17 | Toshiba Corp | 窒化ガリウム系化合物半導体発光素子およびその製造方法ならびに発光装置 |
| JP4183299B2 (ja) * | 1998-03-25 | 2008-11-19 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
| JP3736181B2 (ja) | 1998-05-13 | 2006-01-18 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| DE19921987B4 (de) | 1998-05-13 | 2007-05-16 | Toyoda Gosei Kk | Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen |
| US6287947B1 (en) * | 1999-06-08 | 2001-09-11 | Lumileds Lighting, U.S. Llc | Method of forming transparent contacts to a p-type GaN layer |
| US6992334B1 (en) | 1999-12-22 | 2006-01-31 | Lumileds Lighting U.S., Llc | Multi-layer highly reflective ohmic contacts for semiconductor devices |
| US6903376B2 (en) * | 1999-12-22 | 2005-06-07 | Lumileds Lighting U.S., Llc | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
| TW439304B (en) * | 2000-01-05 | 2001-06-07 | Ind Tech Res Inst | GaN series III-V compound semiconductor devices |
| JP3795298B2 (ja) * | 2000-03-31 | 2006-07-12 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法 |
| US6693352B1 (en) * | 2000-06-05 | 2004-02-17 | Emitronix Inc. | Contact structure for group III-V semiconductor devices and method of producing the same |
| JP4024994B2 (ja) | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
| JP2002170990A (ja) * | 2000-12-04 | 2002-06-14 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体へのｐ型オーム性接合形成方法 |
| JP4925512B2 (ja) * | 2001-02-16 | 2012-04-25 | スタンレー電気株式会社 | 波長変換型半導体素子 |
| JP5283293B2 (ja) | 2001-02-21 | 2013-09-04 | ソニー株式会社 | 半導体発光素子 |
| JP3972670B2 (ja) * | 2002-02-06 | 2007-09-05 | 豊田合成株式会社 | 発光装置 |
| KR100612832B1 (ko) * | 2003-05-07 | 2006-08-18 | 삼성전자주식회사 | 고성능의 질화갈륨계 광소자 구현을 위한 니켈계 고용체를 이용한 오믹 접촉 형성을 위한 금속박막 및 그 제조방법 |
| US6969874B1 (en) * | 2003-06-12 | 2005-11-29 | Sandia Corporation | Flip-chip light emitting diode with resonant optical microcavity |
| KR100568269B1 (ko) * | 2003-06-23 | 2006-04-05 | 삼성전기주식회사 | 플립-칩 본딩용 질화갈륨계 발광 다이오드 및 그 제조방법 |
| US20050072968A1 (en) * | 2003-10-06 | 2005-04-07 | Tzong-Liang Tsai | Light-emitting device |
| KR100571818B1 (ko) * | 2003-10-08 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
| US7009215B2 (en) * | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
-
2003
- 2003-08-25 KR KR1020030058841A patent/KR100624411B1/ko not_active Expired - Fee Related
-
2004
- 2004-07-15 US US10/891,014 patent/US7462877B2/en not_active Expired - Lifetime
- 2004-07-23 EP EP04254402.3A patent/EP1511091B1/en not_active Expired - Lifetime
- 2004-07-23 CN CNB2004100545391A patent/CN100361324C/zh not_active Expired - Lifetime
- 2004-08-25 JP JP2004245933A patent/JP2005072603A/ja active Pending
-
2011
- 2011-06-08 JP JP2011128659A patent/JP2011181961A/ja active Pending
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