JP2005072603A - 窒化物系発光素子及びその製造方法 - Google Patents

窒化物系発光素子及びその製造方法 Download PDF

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Publication number
JP2005072603A
JP2005072603A JP2004245933A JP2004245933A JP2005072603A JP 2005072603 A JP2005072603 A JP 2005072603A JP 2004245933 A JP2004245933 A JP 2004245933A JP 2004245933 A JP2004245933 A JP 2004245933A JP 2005072603 A JP2005072603 A JP 2005072603A
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JP
Japan
Prior art keywords
metal
layer
light emitting
nitride
type cladding
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JP2004245933A
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English (en)
Japanese (ja)
Inventor
June-O Song
俊 午 宋
Tae-Yeon Seong
泰 連 成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Gwangju Institute of Science and Technology
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Samsung Electronics Co Ltd
Gwangju Institute of Science and Technology
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Application filed by Samsung Electronics Co Ltd, Gwangju Institute of Science and Technology filed Critical Samsung Electronics Co Ltd
Publication of JP2005072603A publication Critical patent/JP2005072603A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
JP2004245933A 2003-08-25 2004-08-25 窒化物系発光素子及びその製造方法 Pending JP2005072603A (ja)

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KR1020030058841A KR100624411B1 (ko) 2003-08-25 2003-08-25 질화물계 발광소자 및 그 제조방법

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JP2011128659A Division JP2011181961A (ja) 2003-08-25 2011-06-08 窒化物系発光素子及びその製造方法

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JP2005072603A true JP2005072603A (ja) 2005-03-17

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JP2011128659A Pending JP2011181961A (ja) 2003-08-25 2011-06-08 窒化物系発光素子及びその製造方法

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US (1) US7462877B2 (enExample)
EP (1) EP1511091B1 (enExample)
JP (2) JP2005072603A (enExample)
KR (1) KR100624411B1 (enExample)
CN (1) CN100361324C (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007318157A (ja) * 2006-05-25 2007-12-06 Philips Lumileds Lightng Co Llc 半導体発光機器のための反射電極
JP2010010591A (ja) * 2008-06-30 2010-01-14 Toshiba Corp 半導体発光装置
JP2011258993A (ja) * 2011-09-26 2011-12-22 Toshiba Corp 半導体発光装置及びその製造方法
JP2012059745A (ja) * 2010-09-06 2012-03-22 Toshiba Corp 半導体素子
JP2013062535A (ja) * 2012-12-18 2013-04-04 Toshiba Corp 半導体発光装置及びその製造方法
JP2014532993A (ja) * 2011-11-07 2014-12-08 コーニンクレッカ フィリップス エヌ ヴェ より一様な注入及びより少ない光学的損失を備える改善されたｐ型接点

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KR100571816B1 (ko) * 2003-09-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
KR100647278B1 (ko) 2003-10-27 2006-11-17 삼성전자주식회사 ＩＩＩ - Ｖ 족 ＧａＮ 계 화합물 반도체 및 이에적용되는 ｐ-형 전극
KR100601971B1 (ko) * 2003-12-22 2006-07-18 삼성전자주식회사 탑에미트형 질화물계 발광소자 및 그 제조방법
KR20050082040A (ko) * 2004-02-17 2005-08-22 어드밴스드 에피텍시 테크날리지 발광다이오드 제조방법
TWI292631B (en) * 2005-02-05 2008-01-11 Epistar Corp Light emitting diode and method of the same
EP1750309A3 (en) * 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
CN1909238B (zh) * 2005-08-03 2010-11-03 三星电机株式会社 具有保护元件的发光装置及该发光装置的制造方法
JP2007157853A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
JP2007157852A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
CN101728451B (zh) * 2008-10-21 2013-10-30 展晶科技(深圳)有限公司 半导体光电元件
JP5498723B2 (ja) * 2009-04-10 2014-05-21 スタンレー電気株式会社 酸化亜鉛系半導体素子及びその製造方法
JP5845557B2 (ja) * 2010-03-30 2016-01-20 ソニー株式会社 半導体発光素子の製造方法
WO2011125289A1 (ja) * 2010-04-01 2011-10-13 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP4820465B1 (ja) * 2010-04-02 2011-11-24 パナソニック株式会社 窒化物系半導体素子およびその製造方法
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
KR20140140166A (ko) * 2013-05-28 2014-12-09 포항공과대학교 산학협력단 발광 다이오드
CN109037200B (zh) * 2018-07-18 2020-06-30 易美芯光（北京）科技有限公司 Led阵列结构及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232685A (ja) * 1996-02-27 1997-09-05 Toshiba Corp 半導体発光装置
JPH10190055A (ja) * 1996-12-24 1998-07-21 Rohm Co Ltd 半導体発光素子
JPH10308533A (ja) * 1997-05-09 1998-11-17 Toshiba Corp 窒化ガリウム系化合物半導体発光素子およびその製造方法ならびに発光装置
JP2001007398A (ja) * 1999-06-08 2001-01-12 Agilent Technol Inc ｐ型ＧａＮ層に透光性接触部を形成する方法
JP2002026392A (ja) * 2000-06-30 2002-01-25 Toshiba Corp 半導体発光素子とその製造方法、及び半導体発光装置
JP2002170990A (ja) * 2000-12-04 2002-06-14 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体へのｐ型オーム性接合形成方法

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JP3499385B2 (ja) * 1996-11-02 2004-02-23 豊田合成株式会社 ３族窒化物半導体の電極形成方法
JP4183299B2 (ja) * 1998-03-25 2008-11-19 株式会社東芝 窒化ガリウム系化合物半導体発光素子
JP3736181B2 (ja) 1998-05-13 2006-01-18 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
DE19921987B4 (de) 1998-05-13 2007-05-16 Toyoda Gosei Kk Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen
US6992334B1 (en) 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
TW439304B (en) * 2000-01-05 2001-06-07 Ind Tech Res Inst GaN series III-V compound semiconductor devices
JP3795298B2 (ja) * 2000-03-31 2006-07-12 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
US6693352B1 (en) * 2000-06-05 2004-02-17 Emitronix Inc. Contact structure for group III-V semiconductor devices and method of producing the same
JP4925512B2 (ja) * 2001-02-16 2012-04-25 スタンレー電気株式会社 波長変換型半導体素子
JP5283293B2 (ja) 2001-02-21 2013-09-04 ソニー株式会社 半導体発光素子
JP3972670B2 (ja) * 2002-02-06 2007-09-05 豊田合成株式会社 発光装置
KR100612832B1 (ko) * 2003-05-07 2006-08-18 삼성전자주식회사 고성능의 질화갈륨계 광소자 구현을 위한 니켈계 고용체를 이용한 오믹 접촉 형성을 위한 금속박막 및 그 제조방법
US6969874B1 (en) * 2003-06-12 2005-11-29 Sandia Corporation Flip-chip light emitting diode with resonant optical microcavity
KR100568269B1 (ko) * 2003-06-23 2006-04-05 삼성전기주식회사 플립-칩 본딩용 질화갈륨계 발광 다이오드 및 그 제조방법
US20050072968A1 (en) * 2003-10-06 2005-04-07 Tzong-Liang Tsai Light-emitting device
KR100571818B1 (ko) * 2003-10-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232685A (ja) * 1996-02-27 1997-09-05 Toshiba Corp 半導体発光装置
JPH10190055A (ja) * 1996-12-24 1998-07-21 Rohm Co Ltd 半導体発光素子
JPH10308533A (ja) * 1997-05-09 1998-11-17 Toshiba Corp 窒化ガリウム系化合物半導体発光素子およびその製造方法ならびに発光装置
JP2001007398A (ja) * 1999-06-08 2001-01-12 Agilent Technol Inc ｐ型ＧａＮ層に透光性接触部を形成する方法
JP2002026392A (ja) * 2000-06-30 2002-01-25 Toshiba Corp 半導体発光素子とその製造方法、及び半導体発光装置
JP2002170990A (ja) * 2000-12-04 2002-06-14 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体へのｐ型オーム性接合形成方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007318157A (ja) * 2006-05-25 2007-12-06 Philips Lumileds Lightng Co Llc 半導体発光機器のための反射電極
JP2010010591A (ja) * 2008-06-30 2010-01-14 Toshiba Corp 半導体発光装置
US8093608B2 (en) 2008-06-30 2012-01-10 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
US8384109B2 (en) 2008-06-30 2013-02-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
US8648377B2 (en) 2008-06-30 2014-02-11 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JP2012059745A (ja) * 2010-09-06 2012-03-22 Toshiba Corp 半導体素子
JP2011258993A (ja) * 2011-09-26 2011-12-22 Toshiba Corp 半導体発光装置及びその製造方法
JP2014532993A (ja) * 2011-11-07 2014-12-08 コーニンクレッカ フィリップス エヌ ヴェ より一様な注入及びより少ない光学的損失を備える改善されたｐ型接点
US9583679B2 (en) 2011-11-07 2017-02-28 Koninklijke Philips N.V. P-contact with more uniform injection and lower optical loss
JP2013062535A (ja) * 2012-12-18 2013-04-04 Toshiba Corp 半導体発光装置及びその製造方法

Also Published As

Publication number Publication date
JP2011181961A (ja) 2011-09-15
EP1511091B1 (en) 2014-01-01
CN1591917A (zh) 2005-03-09
US7462877B2 (en) 2008-12-09
EP1511091A3 (en) 2006-12-13
KR20050022242A (ko) 2005-03-07
CN100361324C (zh) 2008-01-09
US20050045907A1 (en) 2005-03-03
KR100624411B1 (ko) 2006-09-18
EP1511091A2 (en) 2005-03-02

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