CN101728451B - 半导体光电元件 - Google Patents
半导体光电元件 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 182
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims abstract description 16
- 230000005693 optoelectronics Effects 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 abstract 2
- 238000005036 potential barrier Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 25
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 19
- 238000010586 diagram Methods 0.000 description 7
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
一种半导体光电元件,其包括:一个基板和一个磊晶结构层,该磊晶结构层位于所述基板之上,该磊晶结构层包括一个N型半导体层,一个第一P型半导体层,一个多重量子井结构层以及一个未掺杂的半导体层。该N型半导体层所用材料的化学通式为AlaInbGa1-a-bN。该第一P型半导体层所用材料的化学通式为AlcIndGa1-c-dN。该多重量子井结构层设置在该N型半导体层与该第一P型半导体层之间。该未掺杂的半导体层设置在该N型半导体层与该多重量子井结构层之间,该未掺杂的半导体层的位垒层能阶高于该多重量子井结构层的位垒层能阶。
Description
技术领域
本发明涉及一种半导体光电元件。
背景技术
发光二极管(LED,Light Emitting Diode)以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点,从而可作为光源而广泛应用于照明领域,具体可参见Joseph Bielecki等人在文献2007IEEE,23rd IEEE SEMI-THERM Symposium中的ThermalConsiderations for LED Components in an Automotive Lamp一文。发光二极管是一种可将电流转换成特定波长范围的光的半导体元件。光检测器是一种可将特定波长范围的光转换为电流的半导体元件。氮化镓系半导体可以用作蓝光发光二极管的发光元件,也可以用作光检测器的光吸收元件。
氮化镓系半导体用作蓝光发光二极管的发光元件的工作原理是通过在氮化镓系半导体层提供顺向偏压,使电子与空穴在氮化镓系半导体层中结合,电子与空穴结合释放能量而发出特定波长的光,该特定波长的光的波长范围取决于氮化镓系半导体层的导电带与价电子带之间的能隙,一般氮化镓系半导体层可产生波长介于200nm至1.5μm波长范围内的光。
氮化镓系半导体层用作光检测器的光吸收元件的工作原理是通过光入射至氮化镓系半导体层,并使氮化镓系半导体层在逆向偏压下吸收光能量并产生电子与空穴对,进而产生电流,一般氮化镓系半导体层可用于检测波长范围内介于200nm至1.5μm波长范围内的光。
由于现有的形成光检测器或发光二极管的氮化镓系半导体层的结构有细微的差异,因此,使得现有的氮化镓系半导体层的使用受到局限。
发明内容
有鉴于此,有必要提供一种具有可发光且可进光检测的半导体光电元件。
一种半导体光电元件,其包括:一个基板和一个磊晶结构层,该磊晶结构层位于所述基板之上,该磊晶结构层包括一个N型半导体层、一个第一P型半导体层以及一个多重量子井结构层,该N型半导体层所用材料的化学通式为AlaInbGa1-a-bN,其中,a≧0,b≧0,1≧a+b≧0,该第一P型半导体层所用材料的化学通式为AlcIndGa1-c-dN,其中,c≧0,d≧0,1≧c+d≧0,该多重量子井结构层设置在该N型半导体层与该第一P型半导体层之间,该多重量子井结构层所用材料的化学通式为AlxInyGa1-x-yN,其中,x≧0,y≧0,1≧x+y≧0,其特征在于:
该磊晶结构层进一步包括一个未掺杂的半导体层,该未掺杂的半导体层设置在该N型半导体层与该多重量子井结构层之间,该未掺杂的半导体层所用材料的化学通式为:AlrInsGa1-r-sN,其中,r>0,s≧0,1≧r+s>0,该未掺杂的半导体层中Al的含量为:大于或等于5%,小于或等于20%,且该未掺杂的半导体层的位垒层能阶高于该多重量子井结构层的位垒层能阶,该未掺杂的半导体层的能阶该高于N型半导体层的能阶,该未掺杂的半导体层的厚度大于或等于1nm且小于或等于50nm,该未掺杂的半导体层降低该半导体光电元件在施加逆向偏压下产生的暗电流。
与现有技术相比,所述半导体光电元件包括一个未掺杂的半导体层,其在施加顺向偏压下可使得电子与空穴在氮化镓系半导体层中结合,电子与空穴结合释放能量而发出特定波长的光,用作发光元件。当施加逆向偏压时,该未掺杂的半导体层可降低该半导体光电元件在施加逆向偏压下产生的暗电流,以使得该半导体光电元件在光检测下所测量得的光电流读值比光电流与暗电流同时存在时的光电流读值更精确,方便光电流感测,以使得该半导体光电元件在逆向偏压下可用作光检测器。所述暗电流是指一光检测元件于未照光下施以一逆向偏压时产生的微电流。所述光电流是指一光检测元件于光照下施以一逆向偏压,光由该光检测元件的光吸收层吸收并形成分离的电子电洞对所产生的电流。
附图说明
图1是本发明第一实施例提供的半导体光电元件的结构剖面示意图。
图2是图1中提供的半导体光电元件的能阶示意图。
图3是本发明第二实施例提供的半导体光电元件的结构剖面示意图。
图4是图3中提供的半导体光电元件的能阶示意图。
图5是本发明第三实施例提供的半导体光电元件的结构剖面示意图。
具体实施方式
请参照图1,为本发明第一实施例提供的半导体光电元件100的结构剖面示意。该半导体光电元件100包括一个基板11,一个磊晶结构层12。
该基板11的材料可以为蓝宝石、氮化镓、铜钨、硅、碳化硅或氮化铝等。
该磊晶结构层12包括一个N型半导体层121,一个第一P型半导体层122,一个设置在该N型半导体层121与该第一P型半导体层122之间的多重量子井结构层123,以及一个未掺杂的半导体层124。
该磊晶结构层12通过有机金属气相沉积法(Metal-OrganicChemical Vapor Deposition,MOCVD)沉积在该基板11上。
该N型半导体层121所用材料的化学通式为AlaInbGa1-a-bN,其中,a≧0,b≧0,1≧a+b≧0。该N型半导体层121中具有掺杂物,用以提供电子。该N型半导体层121可以为N型氮化镓(n-typeGaN)、N型氮化铟镓(n-type InGaN)、N型氮化铝镓(n-type AlGaN),或是N型氮化铝铟镓(n-type Al0.25In0.25Ga0.5N)等按任意比例组合成的半导体层。
该第一P型半导体层122所用材料的化学通式为AlcIndGa1-c-dN,其中,c≧0,d≧0,1≧c+d≧0。该第一P型半导体层122中具有掺杂物,用以提供空穴。该第一P型半导体层122可以为P型氮化镓(p-type GaN)、P型氮化铟镓(p-type InGaN)、P型氮化铝镓(p-typeAlGaN),或是P型氮化铝铟镓(p-type Al0.25In0.25Ga0.5N)等按任意比例组合成的半导体层。
该多重量子井结构层123包括多个交替重叠的半导体结构层,其所用材料的化学通式为AlxInyGa1-x-yN,其中,x≧0,y≧0,1≧x+y≧0。具体的,该多重量子井结构层123包括的多个半导体结构层可以包括交替重叠的GaN层、InyGa1-yN层、GaN层、InyGa1-yN层、GaN层等。该多重量子井结构层123为该半导体光电元件100的主要光活性层(active layer)。
该未掺杂的半导体层124设置在该N型半导体层121与该多重量子井结构层123之间。该未掺杂的半导体层124所用材料的化学通式为:AlrInsGa1-r-sN,其中,r≧0,s≧0,1≧r+s≧0,通过改变r、s的值即可控制该未掺杂的半导体层124的位垒层能阶。该未掺杂的半导体层124的位垒层能阶高于该多重量子井结构层123的位垒层能阶,请一并参见图2所示的半导体光电组件100的磊晶结构能阶示意图。其中,Ec是导电带能阶(conduction band energy level),Ev是价电子带能阶(valence band energy level)。该未掺杂的半导体层124的能阶是一位垒层能阶,即该未掺杂的半导体层124的能阶高于N型半导体层121的能阶,该未掺杂的半导体层124的能阶也高于相邻的该多重量子井结构层123的能阶,以使得该半导体光电组件100在逆向偏压下能有效降低暗电流,以提升光电流的辨别性。
该未掺杂的半导体层124用于降低该半导体光电元件100在施加逆向偏压下所产生的暗电流。其中,通过控制Al的含量可以控制该半导体光电元件100在施加逆向偏压下以作为光检测器时的光电流与暗电流之比。若Al的含量低于5%时,将造成该未掺杂的半导体层124的能障过低,无法有效的降低暗电流,若Al的含量高于20%,将造成该未掺杂的半导体层124的能障过高,进而会降低光电流。因此该未掺杂的半导体层124中Al的含量优选为:大于或等于5%,小于或等于20%。同时,该未掺杂的半导体层124的厚度也将影响该未掺杂的半导体层124的性能。若该未掺杂的半导体层124的厚度小于1nm时,该未掺杂的半导体层124容易被电流击穿而造成穿透现象(tunneling),使得大部分电流从击穿处通过,造成元件功能降低甚至损坏。若该未掺杂的半导体层124的厚度大于50nm,则会造成光电流降低,且电阻加大,造成光电流难以量测。因此该未掺杂的半导体层124的厚度一般优选大于或等于1nm且小于或等于50nm。
该半导体光电元件100进一步包括一个第一电极层125、一个第二电极层126以及一个缓冲层127。
该第一电极层125设置在该第一P型半导体层122上,该第二电极层126设置在该N型半导体层121的暴露在外的凸台上,以使得该第二电极层126与该未掺杂的半导体层124相互分离。组成该第一电极层125与该第二电极层126的材料可以为钛(Ti)、铝(Al)、镍(Ni)、铂(Pt)、铬(Cr)、铜(Au)等金属或其合金,或为透明导电氧化物,如氧化铟锡(In2O3:Sn,ITO),氧化铟锌(ZnO:In,IZO)等。该第一电极层125与该第二电极层126用于提供该半导体光电元件100的外部电性连接。因此,在施加顺向偏压下,电子与空穴结合释放能量而发出特定波长的光,以使该半导体光电元件100用作发光元件,如发光二极管。在施加逆向偏压下,该半导体光电元件100在光检测下所测量得的光电流读值比光电流与暗电流同时存在时的光电流读值更精确,方便光电流感测,以使得该半导体光电元件在逆向偏压下可用作光检测器。
该缓冲层127位于该基板11与该N型半导体层121之间,其材料一般为氮化镓缓冲层(GaN buffer layer),该缓冲层127可以通过有机金属气相沉积法而形成在该基板13上。
请参照图3,为本发明第二实施例提供的半导体光电元件200的结构剖面示意。其与第一实施例提供的半导体光电元件100结构基本相同,不同之处在于:该半导体光电元件200进一步包括一个第二P型半导体层228。
该第二P型半导体层228位于该第一P型半导体层222与该多重量子井结构层223之间。该第二P型半导体层228所用材料的化学通式为:AlwGa1-wN,其中,1>w≧0。该第二P型半导体层228也可以称作为电流阻挡层(electron blocking layer)或局限层(confinement layer)。在对该半导体光电元件200施加顺向偏压下,该第二P型半导体层228用于阻挡电流,减小电子通过多重量子井结构层223逸出,以使得电子与空穴在该多重量子井结构层223中相结合,释放能量并发光,从而增加该半导体光电元件200在顺向偏压下的发光效率,其能阶示意图可一并参见图4所示。
该半导体光电元件200包括的未掺杂的半导体层224用于提升该半导体光电元件200作为光检测元件的电流识别性,该第二P型半导体层228能有效的提高该半导体光电元件200作为发光元件的发光效率。该半导体光电元件200可以通过顺向偏压与逆向偏压下相互转换,因此,其具备作为发光二极管及光检测元件的双重功能。
请参照图5,为本发明第三实施例提供的半导体光电元件300的结构剖面示意。该半导体光电元件300包括一个N型半导体层321,一个第一P型半导体层322,一个设置在该N型半导体层321与该第一P型半导体层322之间的多重量子井结构层323,一个位于该N型半导体层321与该多重量子井结构层323之间的未掺杂的半导体层324,以及一个位于该多重量子井结构层323与该第一P型半导体层322之间的第二P型半导体层328,一个反射层329以及一个导电基板33。
该反射层329与该第一P型半导体层322相连接,其用于反射光。该反射层329可以为铂、银或铝等高反射率金属层。该反射层329可以通过电镀或蒸镀等方法形成在该第一P型半导体层322上。当该半导体光电元件300施加顺向偏压时,该多重量子井结构层323发出的光可以通过该反射层329反射回该多重量子井结构层323的远离该反射层329的一侧,以增加该半导体光电元件300的发光效率。当该半导体光电元件300施加逆向偏压时,穿过该多重量子井结构层323且未被其吸收的光通过该反射层329反射回该多重量子井结构层323,以增加其光吸收率。因此,该反射层329可有效的增加该半导体光电元件300的发光效率及光检测效率。
该导电基板33设置在该反射层329的远离该第一P型半导体层322的一侧,其构成材料可以为铜、铜钨、硅、碳化硅或铝等。该基板33通过共晶接合法(eutectic process)与该反射层329相连接。该基板33具有良好的导热性与导电性。因此,电流可通过该基板33,且该多重量子井结构层323产生的热量也可以通过该基板33传送出去。同时,该基板33可增强该半导体光电元件300的机械强度,以防止该半导体光电元件300被压损、变形等。
在本实施例中,第一电极层325设置在该N型半导体层321上,该第二电极层326设置在基板33上。
另外,本领域技术人员还可于本发明精神内做其它变化,以用于本发明等设计,只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (10)
1.一种半导体光电元件,其包括:一个基板和一个磊晶结构层,该磊晶结构层位于所述基板之上,该磊晶结构层包括一个N型半导体层、一个第一P型半导体层以及一个多重量子井结构层,该N型半导体层所用材料的化学通式为AlaInbGa1-a-bN,其中,a≧0,b≧0,1≧a+b≧0,该第一P型半导体层所用材料的化学通式为AlcIndGa1-c-dN,其中,c≧0,d≧0,1≧c+d≧0,该多重量子井结构层设置在该N型半导体层与该第一P型半导体层之间,该多重量子井结构层所用材料的化学通式为AlxInyGa1-x-yN,其中,x≧0,y≧0,1≧x+y≧0,其特征在于:
该磊晶结构层进一步包括一个未掺杂的半导体层,该未掺杂的半导体层设置在该N型半导体层与该多重量子井结构层之间,该未掺杂的半导体层所用材料的化学通式为:AlrInsGa1-r-sN,其中,r>0,s≧0,1≧r+s>0,该未掺杂的半导体层中Al的含量为:大于或等于5%,小于或等于20%,且该未掺杂的半导体层的位垒层能阶高于该多重量子井结构层的位垒层能阶,该未掺杂的半导体层的能阶该高于N型半导体层的能阶,该未掺杂的半导体层的厚度大于或等于1nm且小于或等于50nm,该未掺杂的半导体层降低该半导体光电元件在施加逆向偏压下产生的暗电流。
2.如权利要求1所述的半导体光电元件,其特征在于,该未掺杂的半导体层的厚度为大于等于1nm且小于等于50nm。
3.如权利要求1所述的半导体光电元件,其特征在于,该磊晶结构层进一步包括一个第二P型半导体层,该第二P型半导体层设置在该第一P型半导体层与该多重量子井结构层之间,该第二P型半导体层所用材料的化学通式为:AlwGa1-wN,其中,1>w≧0。
4.如权利要求1所述的半导体光电元件,其特征在于,该半导体光电元件为一个光检测元件。
5.如权利要求1所述的半导体光电元件,其特征在于,该半导体光电元件为一个发光二极管。
6.如权利要求1所述的半导体光电元件,其特征在于,该基板具有导电性。
7.如权利要求6所述的半导体光电元件,其特征在于,该基板的材料包括铜、铜钨、硅、碳化硅或铝。
8.如权利要求1所述的半导体光电元件,其特征在于,该基板为蓝宝石基板。
9.如权利要求1所述的半导体光电元件,其特征在于,该半导体元件进一步包括一个反射层,该反射层位于该基板与该第一P型半导体层之间。
10.如权利要求9所述的半导体光电元件,其特征在于,该反射层的材料包括铂、银或铝。
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