JP5845557B2 - 半導体発光素子の製造方法 - Google Patents
半導体発光素子の製造方法 Download PDFInfo
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- JP5845557B2 JP5845557B2 JP2010078239A JP2010078239A JP5845557B2 JP 5845557 B2 JP5845557 B2 JP 5845557B2 JP 2010078239 A JP2010078239 A JP 2010078239A JP 2010078239 A JP2010078239 A JP 2010078239A JP 5845557 B2 JP5845557 B2 JP 5845557B2
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- 239000004065 semiconductor Substances 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010410 layer Substances 0.000 claims description 237
- 238000007747 plating Methods 0.000 claims description 39
- 239000011241 protective layer Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 15
- 238000007772 electroless plating Methods 0.000 claims description 13
- 239000000470 constituent Substances 0.000 claims description 5
- 238000006479 redox reaction Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 47
- 239000002184 metal Substances 0.000 description 47
- 229910002601 GaN Inorganic materials 0.000 description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 17
- 238000005253 cladding Methods 0.000 description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 239000010931 gold Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 239000010949 copper Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052763 palladium Inorganic materials 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000009791 electrochemical migration reaction Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003487 electrochemical reaction Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
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- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- NTWRPUHOZUFEDH-UHFFFAOYSA-N C[Mg]C1C=CC=C1 Chemical compound C[Mg]C1C=CC=C1 NTWRPUHOZUFEDH-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Description
図1は、本発明の一実施の形態に係る発光ダイオード(LED)の断面構造を表したものである。なお、図1は、模式的に表したものであり、実際の寸法、形状とは異なっている。
次に、このような構成を備えた発光ダイオードの製造方法の一例について、図2から図7を参照しつつ詳細に説明する。図2〜図7は、いずれも、製造過程における発光ダイオードの断面構成を表すものである。ここでは、複数の発光ダイオードを一括形成する場合を例示して説明する。
このように、本実施の形態では、光反射層31を覆う保護層32が無電解めっき法により形成されためっき膜からなるようにしたので、保護層32は高精度な寸法を有すると共に緻密な組織を有することとなる。さらに、保護層32を形成するにあたり、めっき下地層としての金属層32Aを予め形成し、めっき浴との電気化学反応により金属層32Aの周囲領域におけるp型コンタクト層27の表面上にもめっき成長を生じさせるようにしたので、保護層32のアライメント精度が向上する。特に、金属層32Aの組成を変化させたり、その表面積を変化させたりすることによって金属層32Aの表面電位を調整し、めっき浴中の金属イオンの吸着力(金属イオンを金属層32Aに引き寄せる化学力)を調整すれば、よりいっそう寸法精度やアライメント精度が高い保護層32が得られる。すなわち、本実施の形態の発光ダイオードおよびその製造方法によれば、無電解めっき法により形成された機械的強度の高い保護層32によって、半導体層20の上に設けられた光反射層31を隙間無く確実に覆うことができる。したがって、高い反射率を有する銀(Ag)などによって光反射層31を構成しつつ、その光反射層31の酸化防止やエレクトロケミカルマイグレーションの防止を確実に図ることができる。その結果、全体構造の寸法の微小化に対応しつつ、高い信頼性を実現することができる。
Claims (4)
- 半導体層の上に光反射層を形成する工程と、
前記光反射層の上にめっき下地層を形成する工程と、
前記めっき下地層の上面のみを覆うキャップ層を形成したのち、保護層を、前記めっき下地層を利用した無電解めっき法により前記光反射層、前記めっき下地層および前記キャップ層を覆うように形成する工程と
を含み、
前記キャップ層を、めっき浴中において酸化還元反応を生じない材料により形成し、
前記保護層を形成する際、前記めっき下地層の端面が露出した状態で前記無電解めっきを行う
半導体発光素子の製造方法。 - 前記保護層を、前記めっき下地層、前記光反射層および前記半導体層のうちの少なくとも1つを基点として成長させる
請求項1記載の半導体発光素子の製造方法。 - 前記めっき下地層の露出面積を変化させることにより、前記保護層の平面形状および断面形状を調整する
請求項1記載の半導体発光素子の製造方法。 - 前記めっき下地層の構成材料を選択し、前記めっき下地層の表面電位を変更することにより、前記保護層の平面形状および断面形状を調整する
請求項1記載の半導体発光素子の製造方法。
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US13/053,433 US20110241047A1 (en) | 2010-03-30 | 2011-03-22 | Photo-emission semiconductor device and method of manufacturing same |
CN201110073883.5A CN102208513B (zh) | 2010-03-30 | 2011-03-23 | 发光半导体器件及其制造方法 |
US15/679,459 US11335830B2 (en) | 2010-03-30 | 2017-08-17 | Photo-emission semiconductor device and method of manufacturing same |
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TW201414012A (zh) * | 2012-09-26 | 2014-04-01 | Chi Mei Lighting Tech Corp | 發光裝置及其製作方法 |
JP6208051B2 (ja) * | 2014-03-06 | 2017-10-04 | 大同特殊鋼株式会社 | 点光源発光ダイオード |
CN105226160A (zh) * | 2015-09-01 | 2016-01-06 | 中国科学院半导体研究所 | 化学镀银制作氮化镓基发光二极管反射镜金属层的方法 |
CN106057993B (zh) * | 2016-08-18 | 2019-07-23 | 厦门市三安光电科技有限公司 | 一种薄膜垂直发光组件及其制作方法 |
JP6824501B2 (ja) * | 2017-02-08 | 2021-02-03 | ウシオ電機株式会社 | 半導体発光素子 |
CN111200046B (zh) * | 2020-01-13 | 2022-06-03 | 广东省半导体产业技术研究院 | Led芯片结构及其制作方法 |
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JP2007081312A (ja) * | 2005-09-16 | 2007-03-29 | Showa Denko Kk | 窒化物系半導体発光素子の製造方法 |
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US7781247B2 (en) * | 2006-10-26 | 2010-08-24 | SemiLEDs Optoelectronics Co., Ltd. | Method for producing Group III-Group V vertical light-emitting diodes |
JP4367531B2 (ja) * | 2007-06-06 | 2009-11-18 | ソニー株式会社 | 発光素子における電極構造の形成方法、及び、積層構造体の形成方法 |
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JP5845557B2 (ja) | 2010-03-30 | 2016-01-20 | ソニー株式会社 | 半導体発光素子の製造方法 |
JP5740901B2 (ja) | 2010-10-15 | 2015-07-01 | ソニー株式会社 | 発光装置および表示装置 |
JP6328497B2 (ja) | 2014-06-17 | 2018-05-23 | ソニーセミコンダクタソリューションズ株式会社 | 半導体発光素子、パッケージ素子、および発光パネル装置 |
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US20170345973A1 (en) | 2017-11-30 |
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CN102208513B (zh) | 2016-06-22 |
US20110241047A1 (en) | 2011-10-06 |
CN102208513A (zh) | 2011-10-05 |
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