CN1591917A - 氮化物基发光器件及其制造方法 - Google Patents
氮化物基发光器件及其制造方法 Download PDFInfo
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- CN1591917A CN1591917A CNA2004100545391A CN200410054539A CN1591917A CN 1591917 A CN1591917 A CN 1591917A CN A2004100545391 A CNA2004100545391 A CN A2004100545391A CN 200410054539 A CN200410054539 A CN 200410054539A CN 1591917 A CN1591917 A CN 1591917A
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 169
- 239000002184 metal Substances 0.000 claims abstract description 169
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 39
- 238000000137 annealing Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 229910052709 silver Inorganic materials 0.000 claims description 26
- 239000004332 silver Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 24
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 239000010948 rhodium Substances 0.000 claims description 16
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052703 rhodium Inorganic materials 0.000 claims description 13
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- 239000011701 zinc Substances 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052702 rhenium Inorganic materials 0.000 claims description 8
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 6
- 150000002602 lanthanoids Chemical class 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000013517 stratification Methods 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000005253 cladding Methods 0.000 abstract 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- 229910002601 GaN Inorganic materials 0.000 description 14
- 238000000151 deposition Methods 0.000 description 14
- 239000003570 air Substances 0.000 description 12
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 229910000990 Ni alloy Inorganic materials 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910000480 nickel oxide Inorganic materials 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910020647 Co-O Inorganic materials 0.000 description 1
- 229910020704 Co—O Inorganic materials 0.000 description 1
- 229910019080 Mg-H Inorganic materials 0.000 description 1
- 229910018553 Ni—O Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR58841/2003 | 2003-08-25 | ||
KR1020030058841A KR100624411B1 (ko) | 2003-08-25 | 2003-08-25 | 질화물계 발광소자 및 그 제조방법 |
KR58841/03 | 2003-08-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1591917A true CN1591917A (zh) | 2005-03-09 |
CN100361324C CN100361324C (zh) | 2008-01-09 |
Family
ID=34101837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100545391A Expired - Lifetime CN100361324C (zh) | 2003-08-25 | 2004-07-23 | 氮化物基发光器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7462877B2 (zh) |
EP (1) | EP1511091B1 (zh) |
JP (2) | JP2005072603A (zh) |
KR (1) | KR100624411B1 (zh) |
CN (1) | CN100361324C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102511086A (zh) * | 2010-04-02 | 2012-06-20 | 松下电器产业株式会社 | 氮化物系半导体元件及其制造方法 |
CN102696122A (zh) * | 2010-04-01 | 2012-09-26 | 松下电器产业株式会社 | 氮化物系半导体元件及其制造方法 |
CN109037200A (zh) * | 2018-07-18 | 2018-12-18 | 易美芯光(北京)科技有限公司 | Led阵列结构及其制备方法 |
Families Citing this family (20)
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KR100571816B1 (ko) * | 2003-09-08 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
KR100647278B1 (ko) | 2003-10-27 | 2006-11-17 | 삼성전자주식회사 | III - V 족 GaN 계 화합물 반도체 및 이에적용되는 p-형 전극 |
KR100601971B1 (ko) * | 2003-12-22 | 2006-07-18 | 삼성전자주식회사 | 탑에미트형 질화물계 발광소자 및 그 제조방법 |
KR20050082040A (ko) * | 2004-02-17 | 2005-08-22 | 어드밴스드 에피텍시 테크날리지 | 발광다이오드 제조방법 |
TWI292631B (en) * | 2005-02-05 | 2008-01-11 | Epistar Corp | Light emitting diode and method of the same |
CN1909238B (zh) * | 2005-08-03 | 2010-11-03 | 三星电机株式会社 | 具有保护元件的发光装置及该发光装置的制造方法 |
EP1750309A3 (en) * | 2005-08-03 | 2009-07-29 | Samsung Electro-mechanics Co., Ltd | Light emitting device having protection element |
JP2007157853A (ja) * | 2005-12-01 | 2007-06-21 | Sony Corp | 半導体発光素子およびその製造方法 |
JP2007157852A (ja) * | 2005-12-01 | 2007-06-21 | Sony Corp | 半導体発光素子およびその製造方法 |
US7501295B2 (en) * | 2006-05-25 | 2009-03-10 | Philips Lumileds Lighting Company, Llc | Method of fabricating a reflective electrode for a semiconductor light emitting device |
JP5197186B2 (ja) | 2008-06-30 | 2013-05-15 | 株式会社東芝 | 半導体発光装置 |
CN101728451B (zh) * | 2008-10-21 | 2013-10-30 | 展晶科技(深圳)有限公司 | 半导体光电元件 |
JP5498723B2 (ja) * | 2009-04-10 | 2014-05-21 | スタンレー電気株式会社 | 酸化亜鉛系半導体素子及びその製造方法 |
JP5845557B2 (ja) * | 2010-03-30 | 2016-01-20 | ソニー株式会社 | 半導体発光素子の製造方法 |
JP5132739B2 (ja) * | 2010-09-06 | 2013-01-30 | 株式会社東芝 | 半導体素子 |
WO2012071107A1 (en) * | 2010-11-23 | 2012-05-31 | Qd Vision, Inc. | Device including semiconductor nanocrystals & method |
JP5646423B2 (ja) * | 2011-09-26 | 2014-12-24 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
WO2013068878A1 (en) * | 2011-11-07 | 2013-05-16 | Koninklijke Philips Electronics N.V. | Improved p-contact with more uniform injection and lower optical loss |
JP2013062535A (ja) * | 2012-12-18 | 2013-04-04 | Toshiba Corp | 半導体発光装置及びその製造方法 |
KR20140140166A (ko) * | 2013-05-28 | 2014-12-09 | 포항공과대학교 산학협력단 | 발광 다이오드 |
Family Cites Families (24)
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JP3754120B2 (ja) * | 1996-02-27 | 2006-03-08 | 株式会社東芝 | 半導体発光装置 |
JP3499385B2 (ja) * | 1996-11-02 | 2004-02-23 | 豊田合成株式会社 | 3族窒化物半導体の電極形成方法 |
JP3737226B2 (ja) * | 1996-12-24 | 2006-01-18 | ローム株式会社 | 半導体発光素子 |
JPH10308533A (ja) * | 1997-05-09 | 1998-11-17 | Toshiba Corp | 窒化ガリウム系化合物半導体発光素子およびその製造方法ならびに発光装置 |
JP4183299B2 (ja) * | 1998-03-25 | 2008-11-19 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
JP3736181B2 (ja) | 1998-05-13 | 2006-01-18 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
DE19921987B4 (de) | 1998-05-13 | 2007-05-16 | Toyoda Gosei Kk | Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen |
US6287947B1 (en) * | 1999-06-08 | 2001-09-11 | Lumileds Lighting, U.S. Llc | Method of forming transparent contacts to a p-type GaN layer |
US6903376B2 (en) | 1999-12-22 | 2005-06-07 | Lumileds Lighting U.S., Llc | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
US6992334B1 (en) | 1999-12-22 | 2006-01-31 | Lumileds Lighting U.S., Llc | Multi-layer highly reflective ohmic contacts for semiconductor devices |
TW439304B (en) * | 2000-01-05 | 2001-06-07 | Ind Tech Res Inst | GaN series III-V compound semiconductor devices |
JP3795298B2 (ja) * | 2000-03-31 | 2006-07-12 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
US6693352B1 (en) * | 2000-06-05 | 2004-02-17 | Emitronix Inc. | Contact structure for group III-V semiconductor devices and method of producing the same |
JP4024994B2 (ja) | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
JP2002170990A (ja) * | 2000-12-04 | 2002-06-14 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体へのp型オーム性接合形成方法 |
JP4925512B2 (ja) * | 2001-02-16 | 2012-04-25 | スタンレー電気株式会社 | 波長変換型半導体素子 |
JP5283293B2 (ja) | 2001-02-21 | 2013-09-04 | ソニー株式会社 | 半導体発光素子 |
JP3972670B2 (ja) * | 2002-02-06 | 2007-09-05 | 豊田合成株式会社 | 発光装置 |
KR100612832B1 (ko) * | 2003-05-07 | 2006-08-18 | 삼성전자주식회사 | 고성능의 질화갈륨계 광소자 구현을 위한 니켈계 고용체를 이용한 오믹 접촉 형성을 위한 금속박막 및 그 제조방법 |
US6969874B1 (en) * | 2003-06-12 | 2005-11-29 | Sandia Corporation | Flip-chip light emitting diode with resonant optical microcavity |
KR100568269B1 (ko) * | 2003-06-23 | 2006-04-05 | 삼성전기주식회사 | 플립-칩 본딩용 질화갈륨계 발광 다이오드 및 그 제조방법 |
US20050072968A1 (en) * | 2003-10-06 | 2005-04-07 | Tzong-Liang Tsai | Light-emitting device |
KR100571818B1 (ko) * | 2003-10-08 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
US7009215B2 (en) * | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
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2003
- 2003-08-25 KR KR1020030058841A patent/KR100624411B1/ko active IP Right Grant
-
2004
- 2004-07-15 US US10/891,014 patent/US7462877B2/en not_active Expired - Lifetime
- 2004-07-23 CN CNB2004100545391A patent/CN100361324C/zh not_active Expired - Lifetime
- 2004-07-23 EP EP04254402.3A patent/EP1511091B1/en not_active Expired - Lifetime
- 2004-08-25 JP JP2004245933A patent/JP2005072603A/ja active Pending
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2011
- 2011-06-08 JP JP2011128659A patent/JP2011181961A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102696122A (zh) * | 2010-04-01 | 2012-09-26 | 松下电器产业株式会社 | 氮化物系半导体元件及其制造方法 |
CN102511086A (zh) * | 2010-04-02 | 2012-06-20 | 松下电器产业株式会社 | 氮化物系半导体元件及其制造方法 |
CN109037200A (zh) * | 2018-07-18 | 2018-12-18 | 易美芯光(北京)科技有限公司 | Led阵列结构及其制备方法 |
CN109037200B (zh) * | 2018-07-18 | 2020-06-30 | 易美芯光(北京)科技有限公司 | Led阵列结构及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100361324C (zh) | 2008-01-09 |
JP2011181961A (ja) | 2011-09-15 |
EP1511091A2 (en) | 2005-03-02 |
JP2005072603A (ja) | 2005-03-17 |
KR20050022242A (ko) | 2005-03-07 |
US7462877B2 (en) | 2008-12-09 |
US20050045907A1 (en) | 2005-03-03 |
EP1511091B1 (en) | 2014-01-01 |
EP1511091A3 (en) | 2006-12-13 |
KR100624411B1 (ko) | 2006-09-18 |
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