CN100361324C - 氮化物基发光器件及其制造方法 - Google Patents

氮化物基发光器件及其制造方法 Download PDF

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Publication number
CN100361324C
CN100361324C CNB2004100545391A CN200410054539A CN100361324C CN 100361324 C CN100361324 C CN 100361324C CN B2004100545391 A CNB2004100545391 A CN B2004100545391A CN 200410054539 A CN200410054539 A CN 200410054539A CN 100361324 C CN100361324 C CN 100361324C
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CN
China
Prior art keywords
layer
metal
light
type cladding
emitting device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB2004100545391A
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English (en)
Chinese (zh)
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CN1591917A (zh
Inventor
宋俊午
成泰连
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Gwangju Institute of Science and Technology
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Samsung Electronics Co Ltd
Gwangju Institute of Science and Technology
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Publication of CN1591917A publication Critical patent/CN1591917A/zh
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Publication of CN100361324C publication Critical patent/CN100361324C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
CNB2004100545391A 2003-08-25 2004-07-23 氮化物基发光器件及其制造方法 Expired - Lifetime CN100361324C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR58841/2003 2003-08-25
KR58841/03 2003-08-25
KR1020030058841A KR100624411B1 (ko) 2003-08-25 2003-08-25 질화물계 발광소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
CN1591917A CN1591917A (zh) 2005-03-09
CN100361324C true CN100361324C (zh) 2008-01-09

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CNB2004100545391A Expired - Lifetime CN100361324C (zh) 2003-08-25 2004-07-23 氮化物基发光器件及其制造方法

Country Status (5)

Country Link
US (1) US7462877B2 (enExample)
EP (1) EP1511091B1 (enExample)
JP (2) JP2005072603A (enExample)
KR (1) KR100624411B1 (enExample)
CN (1) CN100361324C (enExample)

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KR100647278B1 (ko) 2003-10-27 2006-11-17 삼성전자주식회사 ＩＩＩ - Ｖ 족 ＧａＮ 계 화합물 반도체 및 이에적용되는 ｐ-형 전극
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KR20050082040A (ko) * 2004-02-17 2005-08-22 어드밴스드 에피텍시 테크날리지 발광다이오드 제조방법
TWI292631B (en) * 2005-02-05 2008-01-11 Epistar Corp Light emitting diode and method of the same
EP1750309A3 (en) * 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
CN1909238B (zh) * 2005-08-03 2010-11-03 三星电机株式会社 具有保护元件的发光装置及该发光装置的制造方法
JP2007157852A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
JP2007157853A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
JP5197186B2 (ja) * 2008-06-30 2013-05-15 株式会社東芝 半導体発光装置
CN101728451B (zh) * 2008-10-21 2013-10-30 展晶科技(深圳)有限公司 半导体光电元件
JP5498723B2 (ja) * 2009-04-10 2014-05-21 スタンレー電気株式会社 酸化亜鉛系半導体素子及びその製造方法
WO2011125289A1 (ja) * 2010-04-01 2011-10-13 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP4820465B1 (ja) * 2010-04-02 2011-11-24 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5132739B2 (ja) * 2010-09-06 2013-01-30 株式会社東芝 半導体素子
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
JP5646423B2 (ja) * 2011-09-26 2014-12-24 株式会社東芝 半導体発光装置及びその製造方法
EP2745333B8 (en) * 2011-11-07 2018-09-05 Lumileds Holding B.V. Improved p-contact with more uniform injection and lower optical loss
JP2013062535A (ja) * 2012-12-18 2013-04-04 Toshiba Corp 半導体発光装置及びその製造方法
KR20140140166A (ko) * 2013-05-28 2014-12-09 포항공과대학교 산학협력단 발광 다이오드
CN109037200B (zh) * 2018-07-18 2020-06-30 易美芯光（北京）科技有限公司 Led阵列结构及其制备方法

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WO2001047038A1 (en) * 1999-12-22 2001-06-28 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for light-emitting semiconductor devices
EP1168460A2 (en) * 2000-06-30 2002-01-02 Kabushiki Kaisha Toshiba Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element

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JP5283293B2 (ja) 2001-02-21 2013-09-04 ソニー株式会社 半導体発光素子
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KR100612832B1 (ko) * 2003-05-07 2006-08-18 삼성전자주식회사 고성능의 질화갈륨계 광소자 구현을 위한 니켈계 고용체를 이용한 오믹 접촉 형성을 위한 금속박막 및 그 제조방법
US6969874B1 (en) * 2003-06-12 2005-11-29 Sandia Corporation Flip-chip light emitting diode with resonant optical microcavity
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US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001047038A1 (en) * 1999-12-22 2001-06-28 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for light-emitting semiconductor devices
EP1168460A2 (en) * 2000-06-30 2002-01-02 Kabushiki Kaisha Toshiba Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102208513A (zh) * 2010-03-30 2011-10-05 索尼公司 发光半导体器件及其制造方法
CN102208513B (zh) * 2010-03-30 2016-06-22 索尼公司 发光半导体器件及其制造方法

Also Published As

Publication number Publication date
EP1511091A3 (en) 2006-12-13
US7462877B2 (en) 2008-12-09
EP1511091A2 (en) 2005-03-02
JP2005072603A (ja) 2005-03-17
KR100624411B1 (ko) 2006-09-18
KR20050022242A (ko) 2005-03-07
US20050045907A1 (en) 2005-03-03
JP2011181961A (ja) 2011-09-15
CN1591917A (zh) 2005-03-09
EP1511091B1 (en) 2014-01-01

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