JP2017152667A5 - - Google Patents
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- Publication number
- JP2017152667A5 JP2017152667A5 JP2016088311A JP2016088311A JP2017152667A5 JP 2017152667 A5 JP2017152667 A5 JP 2017152667A5 JP 2016088311 A JP2016088311 A JP 2016088311A JP 2016088311 A JP2016088311 A JP 2016088311A JP 2017152667 A5 JP2017152667 A5 JP 2017152667A5
- Authority
- JP
- Japan
- Prior art keywords
- barrier layer
- ohmic electrode
- nickel
- layer
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 1
- 229910021334 nickel silicide Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229910017518 Cu Zn Inorganic materials 0.000 description 3
- 229910017752 Cu-Zn Inorganic materials 0.000 description 3
- 229910017943 Cu—Zn Inorganic materials 0.000 description 3
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/079,457 US20190058048A1 (en) | 2016-02-24 | 2017-02-02 | Ohmic electrode |
| PCT/JP2017/003816 WO2017145694A1 (ja) | 2016-02-24 | 2017-02-02 | オーミック電極 |
| KR1020187026713A KR20180116324A (ko) | 2016-02-24 | 2017-02-02 | 오믹 전극 |
| CN201780013111.8A CN108701596A (zh) | 2016-02-24 | 2017-02-02 | 欧姆电极 |
| EP17756136.2A EP3422389A4 (en) | 2016-02-24 | 2017-02-02 | OHMSCHE ELECTRODE |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016032693 | 2016-02-24 | ||
| JP2016032693 | 2016-02-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017152667A JP2017152667A (ja) | 2017-08-31 |
| JP2017152667A5 true JP2017152667A5 (enExample) | 2019-10-10 |
| JP6690985B2 JP6690985B2 (ja) | 2020-04-28 |
Family
ID=59739131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016088311A Expired - Fee Related JP6690985B2 (ja) | 2016-02-24 | 2016-04-26 | オーミック電極 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20190058048A1 (enExample) |
| EP (1) | EP3422389A4 (enExample) |
| JP (1) | JP6690985B2 (enExample) |
| KR (1) | KR20180116324A (enExample) |
| CN (1) | CN108701596A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019140234A (ja) * | 2018-02-09 | 2019-08-22 | トヨタ自動車株式会社 | 半導体装置 |
| WO2020170813A1 (ja) * | 2019-02-18 | 2020-08-27 | 三菱電機株式会社 | 電力用半導体装置および電力変換装置 |
| US10847647B2 (en) | 2019-03-14 | 2020-11-24 | Cree, Inc. | Power semiconductor devices having top-side metallization structures that include buried grain stop layers |
| CN114207838B (zh) * | 2019-08-09 | 2025-11-04 | 日立能源有限公司 | 应变增强型SiC功率半导体器件和制造方法 |
| EP4071786B1 (en) * | 2021-04-06 | 2025-11-05 | Hitachi Energy Ltd | Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4091931B2 (ja) * | 2004-07-13 | 2008-05-28 | 新電元工業株式会社 | ＳｉＣ半導体装置およびＳｉＣ半導体装置の製造方法 |
| JP4038498B2 (ja) * | 2004-07-13 | 2008-01-23 | 新電元工業株式会社 | 半導体素子および半導体素子の製造方法 |
| JP4594113B2 (ja) * | 2005-01-19 | 2010-12-08 | 新電元工業株式会社 | 半導体装置の製造方法 |
| JP2008166504A (ja) * | 2006-12-28 | 2008-07-17 | Toshiba Corp | 電界効果トランジスタおよびその製造方法 |
| CN101842878B (zh) * | 2007-10-24 | 2012-05-23 | 松下电器产业株式会社 | 半导体元件及其制造方法 |
| JP2011091364A (ja) * | 2009-07-27 | 2011-05-06 | Kobe Steel Ltd | 配線構造およびその製造方法、並びに配線構造を備えた表示装置 |
| EP2487720A4 (en) * | 2009-10-05 | 2014-01-01 | Sumitomo Electric Industries | SEMICONDUCTOR COMPONENT |
| JP6324914B2 (ja) * | 2010-11-25 | 2018-05-16 | 三菱電機株式会社 | 炭化珪素半導体装置 |
| JP5889171B2 (ja) * | 2012-12-04 | 2016-03-22 | 三菱電機株式会社 | 炭化珪素半導体装置及びその製造方法 |
| JP6010773B2 (ja) * | 2014-03-10 | 2016-10-19 | パナソニックＩｐマネジメント株式会社 | 半導体素子及びその製造方法 |
-
2016
- 2016-04-26 JP JP2016088311A patent/JP6690985B2/ja not_active Expired - Fee Related
-
2017
- 2017-02-02 CN CN201780013111.8A patent/CN108701596A/zh active Pending
- 2017-02-02 KR KR1020187026713A patent/KR20180116324A/ko not_active Ceased
- 2017-02-02 EP EP17756136.2A patent/EP3422389A4/en not_active Withdrawn
- 2017-02-02 US US16/079,457 patent/US20190058048A1/en not_active Abandoned
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