JP6690985B2 - オーミック電極 - Google Patents

オーミック電極 Download PDF

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Publication number
JP6690985B2
JP6690985B2 JP2016088311A JP2016088311A JP6690985B2 JP 6690985 B2 JP6690985 B2 JP 6690985B2 JP 2016088311 A JP2016088311 A JP 2016088311A JP 2016088311 A JP2016088311 A JP 2016088311A JP 6690985 B2 JP6690985 B2 JP 6690985B2
Authority
JP
Japan
Prior art keywords
layer
electrode
electrode layer
barrier layer
ohmic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2016088311A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017152667A (ja
JP2017152667A5 (enExample
Inventor
後藤　裕史
裕史 後藤
尚敏 坂本
尚敏 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to CN201780013111.8A priority Critical patent/CN108701596A/zh
Priority to PCT/JP2017/003816 priority patent/WO2017145694A1/ja
Priority to US16/079,457 priority patent/US20190058048A1/en
Priority to EP17756136.2A priority patent/EP3422389A4/en
Priority to KR1020187026713A priority patent/KR20180116324A/ko
Publication of JP2017152667A publication Critical patent/JP2017152667A/ja
Publication of JP2017152667A5 publication Critical patent/JP2017152667A5/ja
Application granted granted Critical
Publication of JP6690985B2 publication Critical patent/JP6690985B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/035—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon carbide [SiC] technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2016088311A 2016-02-24 2016-04-26 オーミック電極 Expired - Fee Related JP6690985B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201780013111.8A CN108701596A (zh) 2016-02-24 2017-02-02 欧姆电极
PCT/JP2017/003816 WO2017145694A1 (ja) 2016-02-24 2017-02-02 オーミック電極
US16/079,457 US20190058048A1 (en) 2016-02-24 2017-02-02 Ohmic electrode
EP17756136.2A EP3422389A4 (en) 2016-02-24 2017-02-02 OHMSCHE ELECTRODE
KR1020187026713A KR20180116324A (ko) 2016-02-24 2017-02-02 오믹 전극

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016032693 2016-02-24
JP2016032693 2016-02-24

Publications (3)

Publication Number Publication Date
JP2017152667A JP2017152667A (ja) 2017-08-31
JP2017152667A5 JP2017152667A5 (enExample) 2019-10-10
JP6690985B2 true JP6690985B2 (ja) 2020-04-28

Family

ID=59739131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016088311A Expired - Fee Related JP6690985B2 (ja) 2016-02-24 2016-04-26 オーミック電極

Country Status (5)

Country Link
US (1) US20190058048A1 (enExample)
EP (1) EP3422389A4 (enExample)
JP (1) JP6690985B2 (enExample)
KR (1) KR20180116324A (enExample)
CN (1) CN108701596A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019140234A (ja) * 2018-02-09 2019-08-22 トヨタ自動車株式会社 半導体装置
US12057500B2 (en) * 2019-02-18 2024-08-06 Mitsubishi Electric Corporation Power semiconductor device and power converter
US10847647B2 (en) * 2019-03-14 2020-11-24 Cree, Inc. Power semiconductor devices having top-side metallization structures that include buried grain stop layers
WO2021028353A1 (en) 2019-08-09 2021-02-18 Abb Schweiz Ag Strain enhanced sic power semiconductor device and method of manufacturing
EP4071786B1 (en) * 2021-04-06 2025-11-05 Hitachi Energy Ltd Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4038498B2 (ja) * 2004-07-13 2008-01-23 新電元工業株式会社 半導体素子および半導体素子の製造方法
JP4091931B2 (ja) * 2004-07-13 2008-05-28 新電元工業株式会社 ＳｉＣ半導体装置およびＳｉＣ半導体装置の製造方法
JP4594113B2 (ja) * 2005-01-19 2010-12-08 新電元工業株式会社 半導体装置の製造方法
JP2008166504A (ja) * 2006-12-28 2008-07-17 Toshiba Corp 電界効果トランジスタおよびその製造方法
US8237172B2 (en) * 2007-10-24 2012-08-07 Panasonic Corporation Semiconductor device having a silicon carbide substrate with an ohmic electrode layer in which a reaction layer is arranged in contact with the silicon carbide substrate
JP2011091364A (ja) * 2009-07-27 2011-05-06 Kobe Steel Ltd 配線構造およびその製造方法、並びに配線構造を備えた表示装置
CN102227812A (zh) * 2009-10-05 2011-10-26 住友电气工业株式会社 半导体器件
JP6324914B2 (ja) * 2010-11-25 2018-05-16 三菱電機株式会社 炭化珪素半導体装置
JP5889171B2 (ja) * 2012-12-04 2016-03-22 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
JP6010773B2 (ja) * 2014-03-10 2016-10-19 パナソニックＩｐマネジメント株式会社 半導体素子及びその製造方法

Also Published As

Publication number Publication date
JP2017152667A (ja) 2017-08-31
EP3422389A1 (en) 2019-01-02
EP3422389A4 (en) 2019-10-23
CN108701596A (zh) 2018-10-23
KR20180116324A (ko) 2018-10-24
US20190058048A1 (en) 2019-02-21

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