JP4995187B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- JP4995187B2 JP4995187B2 JP2008506293A JP2008506293A JP4995187B2 JP 4995187 B2 JP4995187 B2 JP 4995187B2 JP 2008506293 A JP2008506293 A JP 2008506293A JP 2008506293 A JP2008506293 A JP 2008506293A JP 4995187 B2 JP4995187 B2 JP 4995187B2
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- 239000004065 semiconductor Substances 0.000 title claims description 87
- 229910052751 metal Inorganic materials 0.000 claims description 155
- 239000002184 metal Substances 0.000 claims description 155
- 229910052721 tungsten Inorganic materials 0.000 claims description 27
- 229910052750 molybdenum Inorganic materials 0.000 claims description 25
- 229910052719 titanium Inorganic materials 0.000 claims description 18
- 229910052697 platinum Inorganic materials 0.000 claims description 17
- 229910052715 tantalum Inorganic materials 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 165
- 239000010408 film Substances 0.000 description 109
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 105
- 229910010271 silicon carbide Inorganic materials 0.000 description 105
- 239000010936 titanium Substances 0.000 description 36
- 239000011229 interlayer Substances 0.000 description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 28
- 239000010949 copper Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 17
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000007769 metal material Substances 0.000 description 8
- 239000002356 single layer Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910008807 WSiN Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- -1 TiN Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
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- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4941—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本実施の形態は、半導体領域上または半導体領域上の絶縁膜上に形成された電極上に、Pt,Ti,Mo,W,Taのうち少なくとも1種を含む第1金属層を形成し、第1金属層上に、Mo,W,Cuのうち少なくとも1種を含む第2金属層を形成し、第2金属層上に、Pt,Mo,Wのうち少なくとも1種を含む第3金属層を形成した、SiCパワーデバイスたる電力用半導体装置である。
本実施の形態は、実施の形態1に係る電力用半導体装置の変形例であって、上述の第3金属膜16を省略した構造の電力用半導体装置である。
Claims (1)
- 表面を有する半導体層(2)と、
前記半導体層の前記表面の少なくとも一部に露出するように前記半導体層内に形成された、所定の導電型の半導体領域(13)と、
前記半導体領域上に形成された第1絶縁膜(8)と、
前記半導体領域上に形成された電極(11)と、
前記電極上に形成され、かつ、Pt,Ti,Mo,W,Taのうち少なくとも1種を含み、かつ前記電極を構成する金属を含まない第1金属層(14)と、
前記第1金属層上に形成され、かつ、Mo,W,Cuのうち少なくとも1種を含み、かつ前記電極を構成する金属及び前記第1金属層を構成する金属を含まない第2金属層(15)と、
前記半導体層の前記表面上および/または前記第1絶縁膜の表面上であって前記電極が形成された領域以外の領域において、形成された第2絶縁膜(10)と
を備え、
前記第1および第2金属層は、前記第2絶縁膜上に延在しており、
前記電極と前記第2絶縁膜とが接触しないように、それらの間に前記第1金属層が存在する、電力用半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008506293A JP4995187B2 (ja) | 2006-03-22 | 2007-03-19 | 電力用半導体装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006078348 | 2006-03-22 | ||
JP2006078348 | 2006-03-22 | ||
JP2008506293A JP4995187B2 (ja) | 2006-03-22 | 2007-03-19 | 電力用半導体装置 |
PCT/JP2007/055514 WO2007108439A1 (ja) | 2006-03-22 | 2007-03-19 | 電力用半導体装置 |
Related Child Applications (1)
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JP2012071019A Division JP2012151498A (ja) | 2006-03-22 | 2012-03-27 | 電力用半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JPWO2007108439A1 JPWO2007108439A1 (ja) | 2009-08-06 |
JP4995187B2 true JP4995187B2 (ja) | 2012-08-08 |
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JP2008506293A Active JP4995187B2 (ja) | 2006-03-22 | 2007-03-19 | 電力用半導体装置 |
JP2012071019A Pending JP2012151498A (ja) | 2006-03-22 | 2012-03-27 | 電力用半導体装置 |
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JP2012071019A Pending JP2012151498A (ja) | 2006-03-22 | 2012-03-27 | 電力用半導体装置 |
Country Status (6)
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---|---|
US (2) | US8093598B2 (ja) |
JP (2) | JP4995187B2 (ja) |
KR (1) | KR101025438B1 (ja) |
CN (1) | CN101395701B (ja) |
DE (1) | DE112007000697B4 (ja) |
WO (1) | WO2007108439A1 (ja) |
Families Citing this family (17)
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JP5211666B2 (ja) * | 2007-12-06 | 2013-06-12 | 株式会社デンソー | 絶縁ゲートトランジスタ |
WO2010073991A1 (ja) * | 2008-12-23 | 2010-07-01 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2014225692A (ja) * | 2008-12-25 | 2014-12-04 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP5558392B2 (ja) | 2011-03-10 | 2014-07-23 | 株式会社東芝 | 半導体装置とその製造方法 |
JP2012253108A (ja) | 2011-06-01 | 2012-12-20 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
WO2012176503A1 (ja) * | 2011-06-23 | 2012-12-27 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
US9257283B2 (en) * | 2012-08-06 | 2016-02-09 | General Electric Company | Device having reduced bias temperature instability (BTI) |
JP5889171B2 (ja) * | 2012-12-04 | 2016-03-22 | 三菱電機株式会社 | 炭化珪素半導体装置及びその製造方法 |
JP6125420B2 (ja) * | 2013-12-26 | 2017-05-10 | 株式会社豊田中央研究所 | 半導体装置 |
WO2015115202A1 (ja) * | 2014-01-28 | 2015-08-06 | 三菱電機株式会社 | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
JP6246617B2 (ja) * | 2014-02-27 | 2017-12-13 | 株式会社豊田中央研究所 | 表面電極を備えている半導体チップ |
US9721915B2 (en) | 2014-04-16 | 2017-08-01 | Mitsubishi Electric Corporation | Semiconductor device |
JP6347442B2 (ja) * | 2014-08-19 | 2018-06-27 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置の製造方法 |
JP6772495B2 (ja) * | 2016-03-16 | 2020-10-21 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US11869840B2 (en) | 2018-07-03 | 2024-01-09 | Infineon Technologies Ag | Silicon carbide device and method for forming a silicon carbide device |
US11367683B2 (en) | 2018-07-03 | 2022-06-21 | Infineon Technologies Ag | Silicon carbide device and method for forming a silicon carbide device |
KR102199957B1 (ko) | 2019-10-11 | 2021-01-07 | 김현욱 | 파이프 자동 천공장치 |
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- 2007-03-19 KR KR1020087022914A patent/KR101025438B1/ko active IP Right Grant
- 2007-03-19 JP JP2008506293A patent/JP4995187B2/ja active Active
- 2007-03-19 WO PCT/JP2007/055514 patent/WO2007108439A1/ja active Application Filing
- 2007-03-19 US US12/162,998 patent/US8093598B2/en active Active
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Also Published As
Publication number | Publication date |
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US20120074508A1 (en) | 2012-03-29 |
DE112007000697B4 (de) | 2013-11-07 |
KR20080098425A (ko) | 2008-11-07 |
KR101025438B1 (ko) | 2011-03-28 |
US20090020766A1 (en) | 2009-01-22 |
JPWO2007108439A1 (ja) | 2009-08-06 |
DE112007000697T5 (de) | 2009-02-05 |
CN101395701A (zh) | 2009-03-25 |
WO2007108439A1 (ja) | 2007-09-27 |
CN101395701B (zh) | 2010-06-02 |
US8093598B2 (en) | 2012-01-10 |
JP2012151498A (ja) | 2012-08-09 |
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