JP2017152667A - オーミック電極 - Google Patents
オーミック電極 Download PDFInfo
- Publication number
- JP2017152667A JP2017152667A JP2016088311A JP2016088311A JP2017152667A JP 2017152667 A JP2017152667 A JP 2017152667A JP 2016088311 A JP2016088311 A JP 2016088311A JP 2016088311 A JP2016088311 A JP 2016088311A JP 2017152667 A JP2017152667 A JP 2017152667A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- electrode layer
- ohmic contact
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 59
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 41
- 238000009792 diffusion process Methods 0.000 claims abstract description 25
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910021334 nickel silicide Inorganic materials 0.000 claims abstract description 25
- 239000010936 titanium Substances 0.000 claims abstract description 25
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 22
- 239000011701 zinc Substances 0.000 claims abstract description 20
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 16
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 5
- 239000011575 calcium Substances 0.000 claims abstract description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 3
- 239000010949 copper Substances 0.000 claims description 62
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 15
- 238000010438 heat treatment Methods 0.000 description 51
- 238000004544 sputter deposition Methods 0.000 description 26
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 22
- 229910010271 silicon carbide Inorganic materials 0.000 description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 239000007789 gas Substances 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000006104 solid solution Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8213—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using SiC technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】SiC半導体装置に用いるオーミック電極が、SiC半導体層の上に形成され、ニッケルおよびニッケルシリサイドからなるグループから選択される材料からなるオーミックコンタクト層と、オーミックコンタクト層の上に形成され、ニッケルの拡散を防止するバリア層と、バリア層の上に形成され、亜鉛、ニッケル、チタン、マンガン、カルシウムのうち少なくとも1種以上を含む銅合金からなる電極層とを含む。
【選択図】図1
Description
スパッタガス:アルゴン
ガス圧: 2mTorr
パワー: RF400W
温度: 800℃
雰囲気: 窒素
スパッタガス:アルゴン
ガス圧: 2mTorr
パワー: RF150W(Niターゲット)、DC400W(Siターゲット)
スパッタガス:アルゴン
ガス圧: 2〜10mTorr
パワー: DC260〜500W
スパッタガス:アルゴン
ガス圧: 2mTorr
パワー: DC260〜500W
スパッタガス:アルゴン、窒素
ガス圧: 2mTorr
パワー: DC260〜500W
スパッタガス:アルゴン+窒素(全流量に対する窒素ガス流量比:30%)
ガス圧: 2mTorr
パワー: DC500W
スパッタガス:アルゴン+窒素(全流量に対する窒素ガス流量比:50〜90%)
ガス圧: 2mTorr
パワー: DC500〜1000W
スパッタガス:アルゴン
ガス圧: 2mTorr
パワー: DC260〜500W
2 エピタキシャル層
3 p型領域
4 n型領域
5 絶縁膜
6 ゲート電極
10 ソース電極
20 ドレイン電極
11、21 オーミックコンタクト層
12、22 バリア層
13、23 電極層
100 SiC−MOSFET
Claims (6)
- SiC半導体装置に用いるオーミック電極であって、
SiC半導体層の上に形成され、ニッケルおよびニッケルシリサイドからなるグループから選択される材料からなるオーミックコンタクト層と、
該オーミックコンタクト層の上に形成され、ニッケルの拡散を防止するバリア層と、
該バリア層の上に形成され、亜鉛、ニッケル、チタン、マンガン、カルシウムのうち少なくとも1種以上を含む銅合金からなる電極層と、を含むことを特徴とするオーミック電極。 - 上記バリア層は、銅に対して非固溶の元素または銅と化合物を形成する元素で構成されることを特徴とする請求項1に記載のオーミック電極。
- 上記バリア層は、モリブデン、タンタル、タングステン、ニオブ、チタンおよびこれらの窒化物からなるグループから選択される材料からなることを特徴とする請求項1または2に記載のオーミック電極。
- 上記電極層に含まれる亜鉛、ニッケルの量は、0.1at%以上、3at%以下、チタンの量は0.1at%以上、0.5at%以下、マンガン、カルシウムの量は、0.1at%以上、1at%以下であることを特徴とする請求項1〜3のいずれかに記載のオーミック電極。
- 上記バリア層の膜厚は、10nm以上、100nm以下であることを特徴とする請求項1〜4のいずれかに記載のオーミック電極。
- 請求項1〜5のいずれかに記載のオーミック電極を含むことを特徴とするSiC半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17756136.2A EP3422389A4 (en) | 2016-02-24 | 2017-02-02 | OHMIC ELECTRODE |
US16/079,457 US20190058048A1 (en) | 2016-02-24 | 2017-02-02 | Ohmic electrode |
CN201780013111.8A CN108701596A (zh) | 2016-02-24 | 2017-02-02 | 欧姆电极 |
PCT/JP2017/003816 WO2017145694A1 (ja) | 2016-02-24 | 2017-02-02 | オーミック電極 |
KR1020187026713A KR20180116324A (ko) | 2016-02-24 | 2017-02-02 | 오믹 전극 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016032693 | 2016-02-24 | ||
JP2016032693 | 2016-02-24 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017152667A true JP2017152667A (ja) | 2017-08-31 |
JP2017152667A5 JP2017152667A5 (ja) | 2019-10-10 |
JP6690985B2 JP6690985B2 (ja) | 2020-04-28 |
Family
ID=59739131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016088311A Active JP6690985B2 (ja) | 2016-02-24 | 2016-04-26 | オーミック電極 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20190058048A1 (ja) |
EP (1) | EP3422389A4 (ja) |
JP (1) | JP6690985B2 (ja) |
KR (1) | KR20180116324A (ja) |
CN (1) | CN108701596A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019140234A (ja) * | 2018-02-09 | 2019-08-22 | トヨタ自動車株式会社 | 半導体装置 |
WO2020170813A1 (ja) * | 2019-02-18 | 2020-08-27 | 三菱電機株式会社 | 電力用半導体装置および電力変換装置 |
JP2022544218A (ja) * | 2019-08-09 | 2022-10-17 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 歪み強化型SiCパワー半導体デバイスおよび製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10847647B2 (en) * | 2019-03-14 | 2020-11-24 | Cree, Inc. | Power semiconductor devices having top-side metallization structures that include buried grain stop layers |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006032456A (ja) * | 2004-07-13 | 2006-02-02 | Shindengen Electric Mfg Co Ltd | 半導体素子および半導体素子の製造方法 |
JP2006032457A (ja) * | 2004-07-13 | 2006-02-02 | Shindengen Electric Mfg Co Ltd | SiC半導体装置およびSiC半導体装置の製造方法 |
JP2014110362A (ja) * | 2012-12-04 | 2014-06-12 | Mitsubishi Electric Corp | 炭化珪素半導体装置及びその製造方法 |
JP2015109474A (ja) * | 2010-11-25 | 2015-06-11 | 三菱電機株式会社 | 炭化珪素半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4594113B2 (ja) * | 2005-01-19 | 2010-12-08 | 新電元工業株式会社 | 半導体装置の製造方法 |
JP2008166504A (ja) * | 2006-12-28 | 2008-07-17 | Toshiba Corp | 電界効果トランジスタおよびその製造方法 |
JP4690485B2 (ja) * | 2007-10-24 | 2011-06-01 | パナソニック株式会社 | 半導体素子の製造方法 |
JP2011091364A (ja) * | 2009-07-27 | 2011-05-06 | Kobe Steel Ltd | 配線構造およびその製造方法、並びに配線構造を備えた表示装置 |
US8963163B2 (en) * | 2009-10-05 | 2015-02-24 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
JP6010773B2 (ja) * | 2014-03-10 | 2016-10-19 | パナソニックIpマネジメント株式会社 | 半導体素子及びその製造方法 |
-
2016
- 2016-04-26 JP JP2016088311A patent/JP6690985B2/ja active Active
-
2017
- 2017-02-02 KR KR1020187026713A patent/KR20180116324A/ko not_active Application Discontinuation
- 2017-02-02 EP EP17756136.2A patent/EP3422389A4/en not_active Withdrawn
- 2017-02-02 CN CN201780013111.8A patent/CN108701596A/zh active Pending
- 2017-02-02 US US16/079,457 patent/US20190058048A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006032456A (ja) * | 2004-07-13 | 2006-02-02 | Shindengen Electric Mfg Co Ltd | 半導体素子および半導体素子の製造方法 |
JP2006032457A (ja) * | 2004-07-13 | 2006-02-02 | Shindengen Electric Mfg Co Ltd | SiC半導体装置およびSiC半導体装置の製造方法 |
JP2015109474A (ja) * | 2010-11-25 | 2015-06-11 | 三菱電機株式会社 | 炭化珪素半導体装置 |
JP2014110362A (ja) * | 2012-12-04 | 2014-06-12 | Mitsubishi Electric Corp | 炭化珪素半導体装置及びその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019140234A (ja) * | 2018-02-09 | 2019-08-22 | トヨタ自動車株式会社 | 半導体装置 |
WO2020170813A1 (ja) * | 2019-02-18 | 2020-08-27 | 三菱電機株式会社 | 電力用半導体装置および電力変換装置 |
JP2022544218A (ja) * | 2019-08-09 | 2022-10-17 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 歪み強化型SiCパワー半導体デバイスおよび製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6690985B2 (ja) | 2020-04-28 |
CN108701596A (zh) | 2018-10-23 |
EP3422389A4 (en) | 2019-10-23 |
KR20180116324A (ko) | 2018-10-24 |
US20190058048A1 (en) | 2019-02-21 |
EP3422389A1 (en) | 2019-01-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6690985B2 (ja) | オーミック電極 | |
JP4995187B2 (ja) | 電力用半導体装置 | |
JP4140648B2 (ja) | SiC半導体用オーミック電極、SiC半導体用オーミック電極の製造方法、半導体装置および半導体装置の製造方法 | |
JP5524905B2 (ja) | パワー半導体素子用Al合金膜 | |
TWI582851B (zh) | Electrode structure and semiconductor device | |
JPWO2008018342A1 (ja) | 炭化ケイ素半導体装置およびその製造方法 | |
JP2019102896A (ja) | アルミニウム合金膜 | |
JP6125420B2 (ja) | 半導体装置 | |
JP6160541B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP6151089B2 (ja) | 半導体装置およびその製造方法 | |
WO2017145694A1 (ja) | オーミック電極 | |
JP4038498B2 (ja) | 半導体素子および半導体素子の製造方法 | |
JP6057032B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP2008171890A (ja) | 半導体装置用電極膜 | |
JPS6015970A (ja) | 半導体装置 | |
US20160372371A1 (en) | Methods for forming low resistivity interconnects | |
JP2004289008A (ja) | 半導体集積回路装置およびその製造方法 | |
TWI493706B (zh) | Semiconductor element and manufacturing method of semiconductor element | |
JP2017168679A (ja) | 炭化珪素半導体素子および炭化珪素半導体素子の製造方法 | |
JP6407355B2 (ja) | 半導体装置およびその製造方法 | |
JP6458525B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP2012243878A (ja) | 半導体電極構造 | |
JP6632392B2 (ja) | 炭化珪素半導体装置 | |
JP2012243877A (ja) | 半導体電極構造 | |
JP5846779B2 (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190328 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190828 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200114 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200221 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200310 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200409 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6690985 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |