KR20180116324A - 오믹 전극 - Google Patents

오믹 전극 Download PDF

Info

Publication number
KR20180116324A
KR20180116324A KR1020187026713A KR20187026713A KR20180116324A KR 20180116324 A KR20180116324 A KR 20180116324A KR 1020187026713 A KR1020187026713 A KR 1020187026713A KR 20187026713 A KR20187026713 A KR 20187026713A KR 20180116324 A KR20180116324 A KR 20180116324A
Authority
KR
South Korea
Prior art keywords
layer
electrode
electrode layer
heat treatment
ohmic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020187026713A
Other languages
English (en)
Korean (ko)
Inventor
히로시 고토
히사토시 사카모토
Original Assignee
가부시키가이샤 고베 세이코쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 고베 세이코쇼 filed Critical 가부시키가이샤 고베 세이코쇼
Priority claimed from PCT/JP2017/003816 external-priority patent/WO2017145694A1/ja
Publication of KR20180116324A publication Critical patent/KR20180116324A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H01L29/45—
    • H01L21/76829—
    • H01L21/76849—
    • H01L21/7685—
    • H01L21/8213—
    • H01L29/78—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/035—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon carbide [SiC] technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L2924/01028—

Landscapes

  • Electrodes Of Semiconductors (AREA)
KR1020187026713A 2016-02-24 2017-02-02 오믹 전극 Ceased KR20180116324A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2016-032693 2016-02-24
JP2016032693 2016-02-24
JP2016088311A JP6690985B2 (ja) 2016-02-24 2016-04-26 オーミック電極
JPJP-P-2016-088311 2016-04-26
PCT/JP2017/003816 WO2017145694A1 (ja) 2016-02-24 2017-02-02 オーミック電極

Publications (1)

Publication Number Publication Date
KR20180116324A true KR20180116324A (ko) 2018-10-24

Family

ID=59739131

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187026713A Ceased KR20180116324A (ko) 2016-02-24 2017-02-02 오믹 전극

Country Status (5)

Country Link
US (1) US20190058048A1 (enExample)
EP (1) EP3422389A4 (enExample)
JP (1) JP6690985B2 (enExample)
KR (1) KR20180116324A (enExample)
CN (1) CN108701596A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019140234A (ja) * 2018-02-09 2019-08-22 トヨタ自動車株式会社 半導体装置
JP7109650B2 (ja) * 2019-02-18 2022-07-29 三菱電機株式会社 電力用半導体装置および電力変換装置
US10847647B2 (en) * 2019-03-14 2020-11-24 Cree, Inc. Power semiconductor devices having top-side metallization structures that include buried grain stop layers
US12113131B2 (en) 2019-08-09 2024-10-08 Hitachi Energy Ltd Strain enhanced SiC power semiconductor device and method of manufacturing
EP4071786B1 (en) * 2021-04-06 2025-11-05 Hitachi Energy Ltd Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4091931B2 (ja) * 2004-07-13 2008-05-28 新電元工業株式会社 ＳｉＣ半導体装置およびＳｉＣ半導体装置の製造方法
JP4038498B2 (ja) * 2004-07-13 2008-01-23 新電元工業株式会社 半導体素子および半導体素子の製造方法
JP4594113B2 (ja) * 2005-01-19 2010-12-08 新電元工業株式会社 半導体装置の製造方法
JP2008166504A (ja) * 2006-12-28 2008-07-17 Toshiba Corp 電界効果トランジスタおよびその製造方法
WO2009054140A1 (ja) * 2007-10-24 2009-04-30 Panasonic Corporation 半導体素子およびその製造方法
JP2011091364A (ja) * 2009-07-27 2011-05-06 Kobe Steel Ltd 配線構造およびその製造方法、並びに配線構造を備えた表示装置
KR20120065962A (ko) * 2009-10-05 2012-06-21 스미토모덴키고교가부시키가이샤 반도체 장치
JP6324914B2 (ja) * 2010-11-25 2018-05-16 三菱電機株式会社 炭化珪素半導体装置
JP5889171B2 (ja) * 2012-12-04 2016-03-22 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
JP6010773B2 (ja) * 2014-03-10 2016-10-19 パナソニックＩｐマネジメント株式会社 半導体素子及びその製造方法

Also Published As

Publication number Publication date
US20190058048A1 (en) 2019-02-21
JP6690985B2 (ja) 2020-04-28
EP3422389A4 (en) 2019-10-23
EP3422389A1 (en) 2019-01-02
CN108701596A (zh) 2018-10-23
JP2017152667A (ja) 2017-08-31

Similar Documents

Publication Publication Date Title
JP6690985B2 (ja) オーミック電極
JP4995187B2 (ja) 電力用半導体装置
JP5668133B2 (ja) 広バンドギャップショットキー障壁デバイス用の多層拡散障壁
JP4591084B2 (ja) 配線用銅合金、半導体装置及び半導体装置の製造方法
JP5524905B2 (ja) パワー半導体素子用Ａｌ合金膜
CN104303269B (zh) 碳化硅半导体装置的制造方法
CN101536152B (zh) SiC半导体用欧姆电极、半导体装置及其制造方法
TWI582851B (zh) Electrode structure and semiconductor device
JP6160541B2 (ja) 炭化珪素半導体装置の製造方法
JP5357457B2 (ja) 半導体装置、半導体装置の製造方法、高キャリア移動度トランジスタおよび発光装置
JP4841844B2 (ja) 半導体素子
JP4091931B2 (ja) ＳｉＣ半導体装置およびＳｉＣ半導体装置の製造方法
WO2017145694A1 (ja) オーミック電極
JP6407355B2 (ja) 半導体装置およびその製造方法
JP6057032B2 (ja) 炭化珪素半導体装置の製造方法
JP2012243878A (ja) 半導体電極構造
JPS6015970A (ja) 半導体装置
JP5846779B2 (ja) 半導体装置及びその製造方法
JP5303008B2 (ja) 半導体素子及び半導体素子の製造方法
JP2017168679A (ja) 炭化珪素半導体素子および炭化珪素半導体素子の製造方法
JP2017157776A (ja) 電極膜、電極膜を有する半導体装置及び半導体装置の製造方法
JP2009124033A (ja) 半導体装置およびその製造方法
JP2012243877A (ja) 半導体電極構造
JP2016149412A (ja) 炭化珪素半導体装置の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000