CN108701596A - 欧姆电极 - Google Patents

欧姆电极 Download PDF

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Publication number
CN108701596A
CN108701596A CN201780013111.8A CN201780013111A CN108701596A CN 108701596 A CN108701596 A CN 108701596A CN 201780013111 A CN201780013111 A CN 201780013111A CN 108701596 A CN108701596 A CN 108701596A
Authority
CN
China
Prior art keywords
layer
electrode layer
electrode
barrier layer
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201780013111.8A
Other languages
English (en)
Chinese (zh)
Inventor
后藤裕史
坂本尚敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority claimed from PCT/JP2017/003816 external-priority patent/WO2017145694A1/ja
Publication of CN108701596A publication Critical patent/CN108701596A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/035—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon carbide [SiC] technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN201780013111.8A 2016-02-24 2017-02-02 欧姆电极 Pending CN108701596A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2016-032693 2016-02-24
JP2016032693 2016-02-24
JP2016088311A JP6690985B2 (ja) 2016-02-24 2016-04-26 オーミック電極
JP2016-088311 2016-04-26
PCT/JP2017/003816 WO2017145694A1 (ja) 2016-02-24 2017-02-02 オーミック電極

Publications (1)

Publication Number Publication Date
CN108701596A true CN108701596A (zh) 2018-10-23

Family

ID=59739131

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780013111.8A Pending CN108701596A (zh) 2016-02-24 2017-02-02 欧姆电极

Country Status (5)

Country Link
US (1) US20190058048A1 (enExample)
EP (1) EP3422389A4 (enExample)
JP (1) JP6690985B2 (enExample)
KR (1) KR20180116324A (enExample)
CN (1) CN108701596A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114207838A (zh) * 2019-08-09 2022-03-18 日立能源瑞士股份公司 应变增强型SiC功率半导体器件和制造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019140234A (ja) * 2018-02-09 2019-08-22 トヨタ自動車株式会社 半導体装置
JP7109650B2 (ja) * 2019-02-18 2022-07-29 三菱電機株式会社 電力用半導体装置および電力変換装置
US10847647B2 (en) * 2019-03-14 2020-11-24 Cree, Inc. Power semiconductor devices having top-side metallization structures that include buried grain stop layers
EP4071786B1 (en) * 2021-04-06 2025-11-05 Hitachi Energy Ltd Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032457A (ja) * 2004-07-13 2006-02-02 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置およびＳｉＣ半導体装置の製造方法
JP2006202883A (ja) * 2005-01-19 2006-08-03 Shindengen Electric Mfg Co Ltd 半導体装置および半導体装置の製造方法
JP2008166504A (ja) * 2006-12-28 2008-07-17 Toshiba Corp 電界効果トランジスタおよびその製造方法
CN101842878A (zh) * 2007-10-24 2010-09-22 松下电器产业株式会社 半导体元件及其制造方法
JP2011091364A (ja) * 2009-07-27 2011-05-06 Kobe Steel Ltd 配線構造およびその製造方法、並びに配線構造を備えた表示装置
CN102227812A (zh) * 2009-10-05 2011-10-26 住友电气工业株式会社 半导体器件
JP2015109474A (ja) * 2010-11-25 2015-06-11 三菱電機株式会社 炭化珪素半導体装置
US20150255544A1 (en) * 2014-03-10 2015-09-10 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and manufacturing method of the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4038498B2 (ja) * 2004-07-13 2008-01-23 新電元工業株式会社 半導体素子および半導体素子の製造方法
JP5889171B2 (ja) * 2012-12-04 2016-03-22 三菱電機株式会社 炭化珪素半導体装置及びその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032457A (ja) * 2004-07-13 2006-02-02 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置およびＳｉＣ半導体装置の製造方法
JP2006202883A (ja) * 2005-01-19 2006-08-03 Shindengen Electric Mfg Co Ltd 半導体装置および半導体装置の製造方法
JP2008166504A (ja) * 2006-12-28 2008-07-17 Toshiba Corp 電界効果トランジスタおよびその製造方法
CN101842878A (zh) * 2007-10-24 2010-09-22 松下电器产业株式会社 半导体元件及其制造方法
JP2011091364A (ja) * 2009-07-27 2011-05-06 Kobe Steel Ltd 配線構造およびその製造方法、並びに配線構造を備えた表示装置
CN102227812A (zh) * 2009-10-05 2011-10-26 住友电气工业株式会社 半导体器件
JP2015109474A (ja) * 2010-11-25 2015-06-11 三菱電機株式会社 炭化珪素半導体装置
US20150255544A1 (en) * 2014-03-10 2015-09-10 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and manufacturing method of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114207838A (zh) * 2019-08-09 2022-03-18 日立能源瑞士股份公司 应变增强型SiC功率半导体器件和制造方法

Also Published As

Publication number Publication date
US20190058048A1 (en) 2019-02-21
JP6690985B2 (ja) 2020-04-28
EP3422389A4 (en) 2019-10-23
EP3422389A1 (en) 2019-01-02
KR20180116324A (ko) 2018-10-24
JP2017152667A (ja) 2017-08-31

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