JP2011023721A5 - - Google Patents

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Publication number
JP2011023721A5
JP2011023721A5 JP2010158372A JP2010158372A JP2011023721A5 JP 2011023721 A5 JP2011023721 A5 JP 2011023721A5 JP 2010158372 A JP2010158372 A JP 2010158372A JP 2010158372 A JP2010158372 A JP 2010158372A JP 2011023721 A5 JP2011023721 A5 JP 2011023721A5
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JP
Japan
Prior art keywords
nickel
intermetallic compound
containing layer
solder bump
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2010158372A
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English (en)
Japanese (ja)
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JP2011023721A (ja
JP5604665B2 (ja
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Publication date
Priority claimed from US12/501,686 external-priority patent/US8378485B2/en
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Publication of JP2011023721A publication Critical patent/JP2011023721A/ja
Publication of JP2011023721A5 publication Critical patent/JP2011023721A5/ja
Application granted granted Critical
Publication of JP5604665B2 publication Critical patent/JP5604665B2/ja
Active legal-status Critical Current
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JP2010158372A 2009-07-13 2010-07-13 銅の追加によるハンダ相互接続の改良 Active JP5604665B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/501,686 2009-07-13
US12/501,686 US8378485B2 (en) 2009-07-13 2009-07-13 Solder interconnect by addition of copper

Publications (3)

Publication Number Publication Date
JP2011023721A JP2011023721A (ja) 2011-02-03
JP2011023721A5 true JP2011023721A5 (enExample) 2013-07-18
JP5604665B2 JP5604665B2 (ja) 2014-10-08

Family

ID=43027609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010158372A Active JP5604665B2 (ja) 2009-07-13 2010-07-13 銅の追加によるハンダ相互接続の改良

Country Status (6)

Country Link
US (2) US8378485B2 (enExample)
EP (1) EP2276063A3 (enExample)
JP (1) JP5604665B2 (enExample)
KR (1) KR101704030B1 (enExample)
CN (1) CN101958259B (enExample)
TW (1) TWI394632B (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8378485B2 (en) 2009-07-13 2013-02-19 Lsi Corporation Solder interconnect by addition of copper
CN103180944A (zh) * 2010-10-25 2013-06-26 松下电器产业株式会社 电子元件的接合方式
US8268675B2 (en) * 2011-02-11 2012-09-18 Nordson Corporation Passivation layer for semiconductor device packaging
US8889995B2 (en) 2011-03-03 2014-11-18 Skyworks Solutions, Inc. Wire bond pad system and method
US8686537B2 (en) 2011-03-03 2014-04-01 Skyworks Solutions, Inc. Apparatus and methods for reducing impact of high RF loss plating
EP2681765B1 (en) * 2011-03-03 2022-04-06 Skyworks Solutions, Inc. Apparatus and method related to reduction of RF signal losses
KR101108548B1 (ko) * 2011-07-12 2012-01-30 김진철 이어폰 케이블 권취기구
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
US9099396B2 (en) * 2011-11-08 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same
US20130241058A1 (en) * 2012-03-16 2013-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Wire Bonding Structures for Integrated Circuits
KR20190058711A (ko) 2012-06-14 2019-05-29 스카이워크스 솔루션즈, 인코포레이티드 고조파 종단 회로를 포함하는 전력 증폭기 모듈 및 관련된 시스템, 장치, 및 방법
US10496977B2 (en) 2012-07-16 2019-12-03 Square, Inc. Storing and forwarding payment transactions
JP5893528B2 (ja) * 2012-07-27 2016-03-23 新日鉄住金マテリアルズ株式会社 無鉛はんだバンプ接合構造
JP2014116367A (ja) * 2012-12-06 2014-06-26 Fujitsu Ltd 電子部品、電子装置の製造方法及び電子装置
JP2014146652A (ja) 2013-01-28 2014-08-14 Toppan Printing Co Ltd 配線基板およびその製造方法
US9299680B2 (en) 2013-03-14 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure having dies with connectors
JP6046010B2 (ja) * 2013-09-09 2016-12-14 株式会社東芝 半導体装置及びその製造方法
US9723716B2 (en) 2013-09-27 2017-08-01 Infineon Technologies Ag Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure
GB2540060B (en) * 2014-03-27 2019-02-13 Intel Corp Hybrid interconnect for low temperature attach
JP6287759B2 (ja) * 2014-10-30 2018-03-07 トヨタ自動車株式会社 半導体装置とその製造方法
JP6281468B2 (ja) * 2014-10-30 2018-02-21 トヨタ自動車株式会社 半導体装置とその製造方法
US9881302B1 (en) 2014-12-11 2018-01-30 Square, Inc. Intelligent payment capture in failed authorization requests
US9576922B2 (en) 2015-05-04 2017-02-21 Globalfoundries Inc. Silver alloying post-chip join
DE102016103585B4 (de) * 2016-02-29 2022-01-13 Infineon Technologies Ag Verfahren zum Herstellen eines Package mit lötbarem elektrischen Kontakt
JP6729331B2 (ja) * 2016-11-30 2020-07-22 富士通株式会社 電子装置及び電子装置の製造方法
US10483221B2 (en) 2017-10-30 2019-11-19 Micron Technology, Inc. 3DI solder cup
KR102075681B1 (ko) 2018-11-16 2020-02-11 박민호 이어폰 전선 꼬임 방지장치
CN110682021B (zh) * 2019-11-11 2021-08-03 重庆理工大学 一种抑制界面imc生长的微焊点的制备方法
KR102837298B1 (ko) 2020-12-22 2025-07-23 삼성전자주식회사 반도체 패키지 및 그 제조 방법
EP4340011A4 (en) * 2021-12-31 2024-10-09 BOE Technology Group Co., Ltd. PRINTED CIRCUIT BOARD, FUNCTION BACK PLATE AND PREPARATION METHOD THEREFOR
US12446151B2 (en) 2022-02-24 2025-10-14 Boe Technology Group Co., Ltd. Circuit board and method for manufacturing the same, functional backplate, backlight module and display apparatus
CN118284842A (zh) 2022-10-31 2024-07-02 京东方科技集团股份有限公司 线路板、发光基板、背光模组及显示装置

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545923A (en) 1993-10-22 1996-08-13 Lsi Logic Corporation Semiconductor device assembly with minimized bond finger connections
US5466635A (en) 1994-06-02 1995-11-14 Lsi Logic Corporation Process for making an interconnect bump for flip-chip integrated circuit including integral standoff and hourglass shaped solder coating
JP3060896B2 (ja) * 1995-05-26 2000-07-10 日本電気株式会社 バンプ電極の構造
US5918794A (en) 1995-12-28 1999-07-06 Lucent Technologies Inc. Solder bonding of dense arrays of microminiature contact pads
US5667132A (en) 1996-04-19 1997-09-16 Lucent Technologies Inc. Method for solder-bonding contact pad arrays
US5891756A (en) * 1997-06-27 1999-04-06 Delco Electronics Corporation Process for converting a wire bond pad to a flip chip solder bump pad and pad formed thereby
TW453137B (en) * 1997-08-25 2001-09-01 Showa Denko Kk Electrode structure of silicon semiconductor device and the manufacturing method of silicon device using it
US6013713A (en) 1997-11-06 2000-01-11 International Business Machines Corporation Electrode modification using an unzippable polymer paste
JP3968554B2 (ja) * 2000-05-01 2007-08-29 セイコーエプソン株式会社 バンプの形成方法及び半導体装置の製造方法
KR100398716B1 (ko) * 2000-06-12 2003-09-19 가부시키가이샤 히타치세이사쿠쇼 반도체 모듈 및 반도체 장치를 접속한 회로 기판
US6348399B1 (en) * 2000-07-06 2002-02-19 Advanced Semiconductor Engineering, Inc. Method of making chip scale package
US20020086520A1 (en) * 2001-01-02 2002-07-04 Advanced Semiconductor Engineering Inc. Semiconductor device having bump electrode
JP4656275B2 (ja) 2001-01-15 2011-03-23 日本電気株式会社 半導体装置の製造方法
US6689680B2 (en) 2001-07-14 2004-02-10 Motorola, Inc. Semiconductor device and method of formation
JP2003045908A (ja) 2001-08-01 2003-02-14 Toshiba Corp 半導体装置とその製造方法
TW540276B (en) * 2001-12-28 2003-07-01 Univ Nat Central Solder point with low speed of consuming nickel
JP2003303842A (ja) * 2002-04-12 2003-10-24 Nec Electronics Corp 半導体装置およびその製造方法
US20030219623A1 (en) 2002-05-21 2003-11-27 Kao Cheng Heng Solder joints with low consumption rate of nickel layer
DE10241589B4 (de) * 2002-09-05 2007-11-22 Qimonda Ag Verfahren zur Lötstopp-Strukturierung von Erhebungen auf Wafern
US7081372B2 (en) * 2003-07-09 2006-07-25 Chartered Semiconductor Manufacturing Ltd. Aluminum cap with electroless nickel/immersion gold
US7186645B2 (en) * 2003-10-13 2007-03-06 Intel Corporation Selective plating of package terminals
DE102005051857A1 (de) * 2005-05-25 2007-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. UBM-PAD, Lötkontakt und Verfahren zur Herstellung einer Lötverbindung
JP4305430B2 (ja) 2005-08-24 2009-07-29 ソニー株式会社 部品実装方法および部品実装体
DE102005055488A1 (de) 2005-11-18 2007-01-04 Infineon Technologies Ag Elektronische Struktur mit mehreren elektronischen Komponenten und Verfahren zu ihrer Herstellung
US20070238283A1 (en) 2006-04-05 2007-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Novel under-bump metallization for bond pad soldering
JP4597940B2 (ja) * 2006-10-26 2010-12-15 富士通セミコンダクター株式会社 外部接続端子
US8314500B2 (en) * 2006-12-28 2012-11-20 Ultratech, Inc. Interconnections for flip-chip using lead-free solders and having improved reaction barrier layers
WO2009013826A1 (ja) 2007-07-25 2009-01-29 Fujitsu Microelectronics Limited 半導体装置
JP4547411B2 (ja) 2007-10-05 2010-09-22 富士通株式会社 半導体装置、及び半導体装置の製造方法
JP2010040691A (ja) * 2008-08-04 2010-02-18 Ebara Corp 鉛フリーバンプ形成方法
US8378485B2 (en) 2009-07-13 2013-02-19 Lsi Corporation Solder interconnect by addition of copper

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