JP2012237060A5 - - Google Patents
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- Publication number
- JP2012237060A5 JP2012237060A5 JP2012092885A JP2012092885A JP2012237060A5 JP 2012237060 A5 JP2012237060 A5 JP 2012237060A5 JP 2012092885 A JP2012092885 A JP 2012092885A JP 2012092885 A JP2012092885 A JP 2012092885A JP 2012237060 A5 JP2012237060 A5 JP 2012237060A5
- Authority
- JP
- Japan
- Prior art keywords
- copper
- layer
- monovalent
- metal
- lower layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 3
- 229910001431 copper ion Inorganic materials 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical compound [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 claims description 3
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 7
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 239000003755 preservative agent Substances 0.000 claims 1
- 230000002335 preservative effect Effects 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000005749 Copper compound Substances 0.000 description 5
- 150000001880 copper compounds Chemical class 0.000 description 5
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- 229940108928 copper Drugs 0.000 description 3
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 229960003280 cupric chloride Drugs 0.000 description 2
- 229940045803 cuprous chloride Drugs 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 1
- 229960000355 copper sulfate Drugs 0.000 description 1
- SDFNZYMSEOUVIF-UHFFFAOYSA-N copper;methanesulfonic acid Chemical compound [Cu].CS(O)(=O)=O SDFNZYMSEOUVIF-UHFFFAOYSA-N 0.000 description 1
- QYCVHILLJSYYBD-UHFFFAOYSA-L copper;oxalate Chemical compound [Cu+2].[O-]C(=O)C([O-])=O QYCVHILLJSYYBD-UHFFFAOYSA-L 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161477155P | 2011-04-19 | 2011-04-19 | |
| US61/477,155 | 2011-04-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012237060A JP2012237060A (ja) | 2012-12-06 |
| JP2012237060A5 true JP2012237060A5 (enExample) | 2016-06-09 |
| JP5996244B2 JP5996244B2 (ja) | 2016-09-21 |
Family
ID=45976788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012092885A Expired - Fee Related JP5996244B2 (ja) | 2011-04-19 | 2012-04-16 | 半導体上の銅のめっき |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20140174936A1 (enExample) |
| EP (1) | EP2514856A3 (enExample) |
| JP (1) | JP5996244B2 (enExample) |
| KR (1) | KR20150127804A (enExample) |
| CN (1) | CN102787338B (enExample) |
| SG (1) | SG185227A1 (enExample) |
| TW (1) | TWI445847B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140008234A1 (en) * | 2012-07-09 | 2014-01-09 | Rohm And Haas Electronic Materials Llc | Method of metal plating semiconductors |
| FR3002545B1 (fr) * | 2013-02-22 | 2016-01-08 | Alchimer | Procede de formation d'un siliciure metallique a l'aide d'une solution contenant des ions or et des ions fluor |
| JP6367322B2 (ja) * | 2013-06-17 | 2018-08-01 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 湿式ウエハバックコンタクトを使用したシリコンビアを通した銅メッキのための方法 |
| CN104711648B (zh) * | 2013-12-17 | 2019-08-16 | Ykk株式会社 | 闪镀铜镀敷液 |
| TWI638424B (zh) * | 2014-11-10 | 2018-10-11 | 應用材料股份有限公司 | 利用濕式晶圓背側接觸進行銅電鍍矽穿孔的方法 |
| CN105154936A (zh) * | 2015-08-21 | 2015-12-16 | 无锡桥阳机械制造有限公司 | 一种稀土镧-铜-锌合金电镀液及其电镀方法 |
| WO2017127197A1 (en) | 2016-01-21 | 2017-07-27 | Applied Materials, Inc. | Process and chemistry of plating of through silicon vias |
| EP3617350A1 (en) * | 2018-08-31 | 2020-03-04 | Tubacex Upstream Technologies, S.A. | Method for coating a metal part destined to be subjected to high contact pressures and metal part obtained therefrom |
| CN114351224B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 电镀挂具和电镀装置 |
| CN114351227B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 电镀挂具和电镀装置 |
| CN114351202B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 晶圆的电镀方法 |
| CN114351225B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 电镀挂具和电镀装置 |
| CN114381789B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 电镀挂具和电镀装置 |
| CN114351226B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 电镀挂具和电镀装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3041255A (en) | 1960-03-22 | 1962-06-26 | Metal & Thermit Corp | Electrodeposition of bright nickel |
| US4251327A (en) * | 1980-01-14 | 1981-02-17 | Motorola, Inc. | Electroplating method |
| US5011567A (en) * | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
| JPH0544075A (ja) * | 1991-08-15 | 1993-02-23 | Nippon Riironaale Kk | 無電解銅めつき代替銅ストライクめつき方法 |
| GB2264717A (en) * | 1992-03-06 | 1993-09-08 | Zinex Corp | Cyanide-free copper plating bath |
| US5750018A (en) * | 1997-03-18 | 1998-05-12 | Learonal, Inc. | Cyanide-free monovalent copper electroplating solutions |
| US6054173A (en) * | 1997-08-22 | 2000-04-25 | Micron Technology, Inc. | Copper electroless deposition on a titanium-containing surface |
| US6261954B1 (en) * | 2000-02-10 | 2001-07-17 | Chartered Semiconductor Manufacturing, Ltd. | Method to deposit a copper layer |
| CN1253606C (zh) * | 2001-02-23 | 2006-04-26 | 株式会社荏原制作所 | 镀铜溶液、镀敷方法和镀敷装置 |
| WO2002086196A1 (en) * | 2001-04-19 | 2002-10-31 | Rd Chemical Company | Copper acid baths, system and method for electroplating high aspect ratio substrates |
| EP1308541A1 (en) * | 2001-10-04 | 2003-05-07 | Shipley Company LLC | Plating bath and method for depositing a metal layer on a substrate |
| US20040108217A1 (en) * | 2002-12-05 | 2004-06-10 | Dubin Valery M. | Methods for forming copper interconnect structures by co-plating of noble metals and structures formed thereby |
| CN100576578C (zh) * | 2006-04-20 | 2009-12-30 | 无锡尚德太阳能电力有限公司 | 制备太阳电池电极的方法及其电化学沉积装置 |
| CN100533785C (zh) * | 2006-06-05 | 2009-08-26 | 罗门哈斯电子材料有限公司 | 镀敷方法 |
| US20080035489A1 (en) * | 2006-06-05 | 2008-02-14 | Rohm And Haas Electronic Materials Llc | Plating process |
| US8058164B2 (en) * | 2007-06-04 | 2011-11-15 | Lam Research Corporation | Methods of fabricating electronic devices using direct copper plating |
| CN101257059B (zh) * | 2007-11-30 | 2011-04-13 | 无锡尚德太阳能电力有限公司 | 一种电化学沉积太阳能电池金属电极的方法 |
| EP2141750B1 (en) * | 2008-07-02 | 2013-10-16 | Rohm and Haas Electronic Materials LLC | Method of light induced plating on semiconductors |
| EP2157209B1 (en) * | 2008-07-31 | 2014-10-22 | Rohm and Haas Electronic Materials LLC | Inhibiting Background Plating |
-
2012
- 2012-04-16 JP JP2012092885A patent/JP5996244B2/ja not_active Expired - Fee Related
- 2012-04-17 TW TW101113558A patent/TWI445847B/zh not_active IP Right Cessation
- 2012-04-17 EP EP12164359.7A patent/EP2514856A3/en not_active Withdrawn
- 2012-04-18 SG SG2012028395A patent/SG185227A1/en unknown
- 2012-04-19 KR KR1020120041124A patent/KR20150127804A/ko not_active Ceased
- 2012-04-19 CN CN201210189836.1A patent/CN102787338B/zh not_active Expired - Fee Related
- 2012-04-19 US US13/451,045 patent/US20140174936A1/en not_active Abandoned
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