JP2012126999A5 - - Google Patents
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- Publication number
- JP2012126999A5 JP2012126999A5 JP2011270791A JP2011270791A JP2012126999A5 JP 2012126999 A5 JP2012126999 A5 JP 2012126999A5 JP 2011270791 A JP2011270791 A JP 2011270791A JP 2011270791 A JP2011270791 A JP 2011270791A JP 2012126999 A5 JP2012126999 A5 JP 2012126999A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- bifluoride
- semiconductor wafer
- silver
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 239000000203 mixture Substances 0.000 claims 6
- 229910052709 silver Inorganic materials 0.000 claims 5
- 239000004332 silver Substances 0.000 claims 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 4
- -1 tetrabutylammonium tetrafluoroborate Chemical compound 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 150000004673 fluoride salts Chemical class 0.000 claims 2
- 229910021645 metal ion Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 238000007747 plating Methods 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 claims 1
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 150000001413 amino acids Chemical class 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 150000004982 aromatic amines Chemical class 0.000 claims 1
- 150000001735 carboxylic acids Chemical class 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910001429 cobalt ion Inorganic materials 0.000 claims 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052500 inorganic mineral Inorganic materials 0.000 claims 1
- 239000011707 mineral Substances 0.000 claims 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims 1
- 229910001453 nickel ion Inorganic materials 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- ANOBYBYXJXCGBS-UHFFFAOYSA-L stannous fluoride Chemical compound F[Sn]F ANOBYBYXJXCGBS-UHFFFAOYSA-L 0.000 claims 1
- BZWNJUCOSVQYLV-UHFFFAOYSA-H trifluoroalumane Chemical compound [F-].[F-].[F-].[F-].[F-].[F-].[Al+3].[Al+3] BZWNJUCOSVQYLV-UHFFFAOYSA-H 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US42259710P | 2010-12-13 | 2010-12-13 | |
| US61/422,597 | 2010-12-13 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012126999A JP2012126999A (ja) | 2012-07-05 |
| JP2012126999A5 true JP2012126999A5 (enExample) | 2015-12-24 |
| JP5868155B2 JP5868155B2 (ja) | 2016-02-24 |
Family
ID=45497721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011270791A Expired - Fee Related JP5868155B2 (ja) | 2010-12-13 | 2011-12-12 | 半導体の電気化学エッチング |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8603314B2 (enExample) |
| EP (1) | EP2463410B1 (enExample) |
| JP (1) | JP5868155B2 (enExample) |
| KR (1) | KR20120065958A (enExample) |
| CN (1) | CN102623324B (enExample) |
| SG (1) | SG182081A1 (enExample) |
| TW (1) | TWI493615B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8969122B2 (en) | 2011-06-14 | 2015-03-03 | International Business Machines Corporation | Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom |
| US9656293B2 (en) * | 2013-03-15 | 2017-05-23 | President And Fellows Of Harvard College | Fabrication of nanopores in atomically-thin membranes by ultra-short electrical pulsing |
| JP6545585B2 (ja) * | 2014-10-16 | 2019-07-17 | 株式会社荏原製作所 | 基板ホルダおよびめっき装置 |
| WO2017112880A1 (en) * | 2015-12-22 | 2017-06-29 | William Marsh Rice University | Formation of porous silicon materials with copper-containing pores |
| JP6859150B2 (ja) * | 2017-03-22 | 2021-04-14 | 株式会社荏原製作所 | めっき装置及びめっき槽構成の決定方法 |
| EP3438330B9 (de) * | 2017-08-03 | 2024-08-14 | Groz-Beckert KG | Textilmaschinenwerkzeugteil und verfahren zur herstellung eines textilwerkzeugs |
| CN110148581B (zh) * | 2018-02-10 | 2022-05-17 | 姜富帅 | 一种金属-半导体的金属化工艺及方法 |
| CN109770438B (zh) * | 2019-03-25 | 2023-07-25 | 云南中烟工业有限责任公司 | 一种镀膜硅基电子烟雾化芯片及其制备方法 |
| CN118825128A (zh) * | 2024-06-27 | 2024-10-22 | 浙江省冶金产品质量检验站有限公司 | 一种用于增强晶硅太阳能电池电镀铜粘附力的表面处理方法 |
Family Cites Families (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3041255A (en) | 1960-03-22 | 1962-06-26 | Metal & Thermit Corp | Electrodeposition of bright nickel |
| US3607480A (en) * | 1968-12-30 | 1971-09-21 | Texas Instruments Inc | Process for etching composite layered structures including a layer of fluoride-etchable silicon nitride and a layer of silicon dioxide |
| US4369099A (en) * | 1981-01-08 | 1983-01-18 | Bell Telephone Laboratories, Incorporated | Photoelectrochemical etching of semiconductors |
| JPS5884965A (ja) * | 1981-11-13 | 1983-05-21 | モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション | ニツケルめつき法 |
| GB8515532D0 (en) | 1985-06-19 | 1985-07-24 | Standard Telephones Cables Ltd | Surface alloys treatment |
| JPH0613366A (ja) * | 1992-04-03 | 1994-01-21 | Internatl Business Mach Corp <Ibm> | 多孔性シリコン膜およびデバイスを作成するための浸漬走査方法およびシステム |
| US5543333A (en) | 1993-09-30 | 1996-08-06 | Siemens Solar Gmbh | Method for manufacturing a solar cell having combined metallization |
| US5599520A (en) | 1994-11-03 | 1997-02-04 | Garces; Juan M. | Synthesis of crystalline porous solids in ammonia |
| US6277662B1 (en) * | 1999-06-03 | 2001-08-21 | Seiichi Nagata | Silicon substrate and forming method thereof |
| EP1132952B1 (en) * | 2000-03-10 | 2016-11-23 | Imec | Method for the formation and lift-off of porous silicon layers |
| JP3530149B2 (ja) * | 2001-05-21 | 2004-05-24 | 新光電気工業株式会社 | 配線基板の製造方法及び半導体装置 |
| US6787450B2 (en) | 2002-05-29 | 2004-09-07 | Micron Technology, Inc. | High aspect ratio fill method and resulting structure |
| US7400395B2 (en) | 2002-06-12 | 2008-07-15 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced raman spectroscopy (SERS) substrate |
| US7192860B2 (en) * | 2002-06-20 | 2007-03-20 | Honeywell International Inc. | Highly selective silicon oxide etching compositions |
| CN1436879A (zh) * | 2003-02-27 | 2003-08-20 | 复旦大学 | 发光多孔硅材料的制备方法 |
| WO2004094581A1 (en) | 2003-04-18 | 2004-11-04 | Ekc Technology, Inc. | Aqueous fluoride compositions for cleaning semiconductor devices |
| EP1644558B1 (en) * | 2003-05-12 | 2019-04-03 | Arkema Inc. | High purity electrolytic sulfonic acid solutions |
| US7407689B2 (en) * | 2003-06-26 | 2008-08-05 | Atotech Deutschland Gmbh | Aqueous acidic immersion plating solutions and methods for plating on aluminum and aluminum alloys |
| JP2005105409A (ja) * | 2003-09-08 | 2005-04-21 | Rikogaku Shinkokai | 多孔質シリコン構造体の製造方法および金属担持多孔質シリコンの製造方法 |
| US7368045B2 (en) * | 2005-01-27 | 2008-05-06 | International Business Machines Corporation | Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow |
| JP5249040B2 (ja) * | 2005-11-18 | 2013-07-31 | レプリソールス グループ エスアーエス | 電極およびその形成方法 |
| CN101055900A (zh) * | 2006-04-10 | 2007-10-17 | 上海太阳能科技有限公司 | 硅太阳电池 |
| US20070256937A1 (en) * | 2006-05-04 | 2007-11-08 | International Business Machines Corporation | Apparatus and method for electrochemical processing of thin films on resistive substrates |
| US20090139868A1 (en) * | 2007-12-03 | 2009-06-04 | Palo Alto Research Center Incorporated | Method of Forming Conductive Lines and Similar Features |
| JP2009147336A (ja) * | 2007-12-12 | 2009-07-02 | Rohm & Haas Electronic Materials Llc | 密着性の促進 |
| TWI351771B (en) * | 2007-12-31 | 2011-11-01 | Sino American Silicon Prod Inc | Solar cell |
| US20090188553A1 (en) * | 2008-01-25 | 2009-07-30 | Emat Technology, Llc | Methods of fabricating solar-cell structures and resulting solar-cell structures |
| NO20081386L (no) * | 2008-03-14 | 2009-09-15 | Rec Solar As | Method for texturing silicon surfaces and wafers thereof |
| TW200952184A (en) * | 2008-06-03 | 2009-12-16 | Univ Nat Taiwan | Structure of mixed type heterojunction thin film solar cells and its manufacturing method |
| TWI473312B (zh) * | 2008-06-06 | 2015-02-11 | Dc Solar Corp | 大面積染料敏化太陽能電池及其電化學製造方法 |
| EP2141750B1 (en) * | 2008-07-02 | 2013-10-16 | Rohm and Haas Electronic Materials LLC | Method of light induced plating on semiconductors |
| KR20110042083A (ko) * | 2008-07-28 | 2011-04-22 | 데이4 에너지 인코포레이티드 | 저온 정밀 에칭백 및 패시베이션 공정으로 제조되는 셀렉티브 에미터를 구비한 결정 실리콘 ｐｖ 셀 |
| EP2157209B1 (en) * | 2008-07-31 | 2014-10-22 | Rohm and Haas Electronic Materials LLC | Inhibiting Background Plating |
| US8003164B2 (en) * | 2008-09-19 | 2011-08-23 | Guardian Industries Corp. | Method of making a scratch-and etch-resistant coated glass article |
| AU2009326846A1 (en) | 2008-12-08 | 2011-06-30 | University Of South Australia | Formation of nanoporous materials |
| US8906218B2 (en) * | 2010-05-05 | 2014-12-09 | Solexel, Inc. | Apparatus and methods for uniformly forming porous semiconductor on a substrate |
| US8329046B2 (en) | 2009-02-05 | 2012-12-11 | Asia Union Electronic Chemical Corporation | Methods for damage etch and texturing of silicon single crystal substrates |
| DE102009008152A1 (de) * | 2009-02-09 | 2010-08-19 | Nb Technologies Gmbh | Siliziumsolarzelle |
| BRPI1007989A2 (pt) * | 2009-02-25 | 2016-03-01 | Avantor Performance Mat Inc | composição multiuso de limpeza de microeletrônicos á base de solvente orgânico ácido |
| CN101673785B (zh) * | 2009-09-25 | 2011-08-17 | 上海大学 | 嵌入式多孔硅结构减反射膜的制备方法 |
| EP2494635A4 (en) * | 2009-10-30 | 2016-08-17 | Univ Rice William M | STRUCTURED SILICON BATTERY ANODES |
| JP5734734B2 (ja) * | 2010-05-18 | 2015-06-17 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 半導体上に電流トラックを形成する方法 |
-
2011
- 2011-12-12 SG SG2011091659A patent/SG182081A1/en unknown
- 2011-12-12 EP EP11192951.9A patent/EP2463410B1/en not_active Not-in-force
- 2011-12-12 JP JP2011270791A patent/JP5868155B2/ja not_active Expired - Fee Related
- 2011-12-13 TW TW100145908A patent/TWI493615B/zh not_active IP Right Cessation
- 2011-12-13 US US13/324,332 patent/US8603314B2/en not_active Expired - Fee Related
- 2011-12-13 CN CN201110463350.8A patent/CN102623324B/zh not_active Expired - Fee Related
- 2011-12-13 KR KR20110134005A patent/KR20120065958A/ko not_active Withdrawn
-
2013
- 2013-06-22 US US13/924,547 patent/US9076657B2/en not_active Expired - Fee Related
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