TWI493615B - 半導體的電化學蝕刻方法 - Google Patents

半導體的電化學蝕刻方法 Download PDF

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Publication number
TWI493615B
TWI493615B TW100145908A TW100145908A TWI493615B TW I493615 B TWI493615 B TW I493615B TW 100145908 A TW100145908 A TW 100145908A TW 100145908 A TW100145908 A TW 100145908A TW I493615 B TWI493615 B TW I493615B
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TW
Taiwan
Prior art keywords
metal
wafer
layer
semiconductor wafer
current
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TW100145908A
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English (en)
Chinese (zh)
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TW201246352A (en
Inventor
蓋瑞 韓
傑森Ａ 瑞斯
喬治Ｒ 阿蒂斯
Original Assignee
羅門哈斯電子材料有限公司
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Publication of TW201246352A publication Critical patent/TW201246352A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
TW100145908A 2010-12-13 2011-12-13 半導體的電化學蝕刻方法 TWI493615B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42259710P 2010-12-13 2010-12-13

Publications (2)

Publication Number Publication Date
TW201246352A TW201246352A (en) 2012-11-16
TWI493615B true TWI493615B (zh) 2015-07-21

Family

ID=45497721

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100145908A TWI493615B (zh) 2010-12-13 2011-12-13 半導體的電化學蝕刻方法

Country Status (7)

Country Link
US (2) US8603314B2 (enExample)
EP (1) EP2463410B1 (enExample)
JP (1) JP5868155B2 (enExample)
KR (1) KR20120065958A (enExample)
CN (1) CN102623324B (enExample)
SG (1) SG182081A1 (enExample)
TW (1) TWI493615B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8969122B2 (en) 2011-06-14 2015-03-03 International Business Machines Corporation Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom
CA2906781C (en) * 2013-03-15 2021-06-08 President And Fellows Of Havard College Fabrication of nanopores in atomically-thin membranes by ultra-short electrical pulsing
JP6545585B2 (ja) * 2014-10-16 2019-07-17 株式会社荏原製作所 基板ホルダおよびめっき装置
WO2017112880A1 (en) * 2015-12-22 2017-06-29 William Marsh Rice University Formation of porous silicon materials with copper-containing pores
JP6859150B2 (ja) * 2017-03-22 2021-04-14 株式会社荏原製作所 めっき装置及びめっき槽構成の決定方法
EP3438330B9 (de) * 2017-08-03 2024-08-14 Groz-Beckert KG Textilmaschinenwerkzeugteil und verfahren zur herstellung eines textilwerkzeugs
CN110148581B (zh) * 2018-02-10 2022-05-17 姜富帅 一种金属-半导体的金属化工艺及方法
CN109770438B (zh) * 2019-03-25 2023-07-25 云南中烟工业有限责任公司 一种镀膜硅基电子烟雾化芯片及其制备方法
CN118825128A (zh) * 2024-06-27 2024-10-22 浙江省冶金产品质量检验站有限公司 一种用于增强晶硅太阳能电池电镀铜粘附力的表面处理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200500502A (en) * 2003-06-26 2005-01-01 Atotech Deutschland Gmbh Aqueous acidic immersion plating solutions and methods for plating on aluminum and aluminum alloys
TW200929576A (en) * 2007-12-31 2009-07-01 Sino American Silicon Prod Inc Solar cell
TW200952184A (en) * 2008-06-03 2009-12-16 Univ Nat Taiwan Structure of mixed type heterojunction thin film solar cells and its manufacturing method
TW200952231A (en) * 2008-06-06 2009-12-16 Dc Solar Corp A large area flexible dye-sensitized solar cell and the electrochemical fabricating method thereof
TW201041152A (en) * 2009-02-09 2010-11-16 Nb Technologies Gmbh Silicon solar cell

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3041255A (en) 1960-03-22 1962-06-26 Metal & Thermit Corp Electrodeposition of bright nickel
US3607480A (en) * 1968-12-30 1971-09-21 Texas Instruments Inc Process for etching composite layered structures including a layer of fluoride-etchable silicon nitride and a layer of silicon dioxide
US4369099A (en) * 1981-01-08 1983-01-18 Bell Telephone Laboratories, Incorporated Photoelectrochemical etching of semiconductors
JPS5884965A (ja) * 1981-11-13 1983-05-21 モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション ニツケルめつき法
GB8515532D0 (en) 1985-06-19 1985-07-24 Standard Telephones Cables Ltd Surface alloys treatment
JPH0613366A (ja) * 1992-04-03 1994-01-21 Internatl Business Mach Corp <Ibm> 多孔性シリコン膜およびデバイスを作成するための浸漬走査方法およびシステム
US5543333A (en) 1993-09-30 1996-08-06 Siemens Solar Gmbh Method for manufacturing a solar cell having combined metallization
US5599520A (en) 1994-11-03 1997-02-04 Garces; Juan M. Synthesis of crystalline porous solids in ammonia
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof
EP1132952B1 (en) * 2000-03-10 2016-11-23 Imec Method for the formation and lift-off of porous silicon layers
JP3530149B2 (ja) * 2001-05-21 2004-05-24 新光電気工業株式会社 配線基板の製造方法及び半導体装置
US6787450B2 (en) 2002-05-29 2004-09-07 Micron Technology, Inc. High aspect ratio fill method and resulting structure
US7400395B2 (en) 2002-06-12 2008-07-15 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced raman spectroscopy (SERS) substrate
US7192860B2 (en) * 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
CN1436879A (zh) * 2003-02-27 2003-08-20 复旦大学 发光多孔硅材料的制备方法
TW200505975A (en) 2003-04-18 2005-02-16 Ekc Technology Inc Aqueous fluoride compositions for cleaning semiconductor devices
ES2726013T3 (es) * 2003-05-12 2019-10-01 Arkema Inc Soluciones electrolíticas de ácido sulfónico de pureza elevada
JP2005105409A (ja) * 2003-09-08 2005-04-21 Rikogaku Shinkokai 多孔質シリコン構造体の製造方法および金属担持多孔質シリコンの製造方法
US7368045B2 (en) * 2005-01-27 2008-05-06 International Business Machines Corporation Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow
US20090071837A1 (en) * 2005-11-18 2009-03-19 Mikael Fredenberg Master electrode and method of forming it
CN101055900A (zh) * 2006-04-10 2007-10-17 上海太阳能科技有限公司 硅太阳电池
US20070256937A1 (en) * 2006-05-04 2007-11-08 International Business Machines Corporation Apparatus and method for electrochemical processing of thin films on resistive substrates
US20090139868A1 (en) * 2007-12-03 2009-06-04 Palo Alto Research Center Incorporated Method of Forming Conductive Lines and Similar Features
US20090196999A1 (en) * 2007-12-12 2009-08-06 Rohm And Haas Electronic Materials Llc Adhesion promotion
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
NO20081386L (no) * 2008-03-14 2009-09-15 Rec Solar As Method for texturing silicon surfaces and wafers thereof
EP2141750B1 (en) * 2008-07-02 2013-10-16 Rohm and Haas Electronic Materials LLC Method of light induced plating on semiconductors
KR20110042083A (ko) * 2008-07-28 2011-04-22 데이4 에너지 인코포레이티드 저온 정밀 에칭백 및 패시베이션 공정으로 제조되는 셀렉티브 에미터를 구비한 결정 실리콘 ｐｖ 셀
EP2157209B1 (en) * 2008-07-31 2014-10-22 Rohm and Haas Electronic Materials LLC Inhibiting Background Plating
US8003164B2 (en) * 2008-09-19 2011-08-23 Guardian Industries Corp. Method of making a scratch-and etch-resistant coated glass article
US20110253544A1 (en) 2008-12-08 2011-10-20 University Of South Australia Formation Of Nanoporous Materials
US8906218B2 (en) * 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US8329046B2 (en) 2009-02-05 2012-12-11 Asia Union Electronic Chemical Corporation Methods for damage etch and texturing of silicon single crystal substrates
EP2401655B1 (en) * 2009-02-25 2014-03-12 Avantor Performance Materials, Inc. Multipurpose acidic, organic solvent based microelectronic cleaning composition
CN101673785B (zh) * 2009-09-25 2011-08-17 上海大学 嵌入式多孔硅结构减反射膜的制备方法
KR20120093895A (ko) * 2009-10-30 2012-08-23 락히드 마틴 코오포레이션 구조화된 실리콘 배터리 애노드들
JP5734734B2 (ja) * 2010-05-18 2015-06-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 半導体上に電流トラックを形成する方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200500502A (en) * 2003-06-26 2005-01-01 Atotech Deutschland Gmbh Aqueous acidic immersion plating solutions and methods for plating on aluminum and aluminum alloys
TW200929576A (en) * 2007-12-31 2009-07-01 Sino American Silicon Prod Inc Solar cell
TW200952184A (en) * 2008-06-03 2009-12-16 Univ Nat Taiwan Structure of mixed type heterojunction thin film solar cells and its manufacturing method
TW200952231A (en) * 2008-06-06 2009-12-16 Dc Solar Corp A large area flexible dye-sensitized solar cell and the electrochemical fabricating method thereof
TW201041152A (en) * 2009-02-09 2010-11-16 Nb Technologies Gmbh Silicon solar cell

Also Published As

Publication number Publication date
EP2463410B1 (en) 2018-07-04
US8603314B2 (en) 2013-12-10
SG182081A1 (en) 2012-07-30
TW201246352A (en) 2012-11-16
US20120184098A1 (en) 2012-07-19
JP2012126999A (ja) 2012-07-05
EP2463410A3 (en) 2016-11-16
CN102623324A (zh) 2012-08-01
US20130288476A1 (en) 2013-10-31
CN102623324B (zh) 2014-12-10
EP2463410A2 (en) 2012-06-13
US9076657B2 (en) 2015-07-07
KR20120065958A (ko) 2012-06-21
JP5868155B2 (ja) 2016-02-24

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