JP2019169579A5 - - Google Patents

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Publication number
JP2019169579A5
JP2019169579A5 JP2018055445A JP2018055445A JP2019169579A5 JP 2019169579 A5 JP2019169579 A5 JP 2019169579A5 JP 2018055445 A JP2018055445 A JP 2018055445A JP 2018055445 A JP2018055445 A JP 2018055445A JP 2019169579 A5 JP2019169579 A5 JP 2019169579A5
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JP
Japan
Prior art keywords
semiconductor device
less
electrode pad
thickness
electrode
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Pending
Application number
JP2018055445A
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English (en)
Japanese (ja)
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JP2019169579A (ja
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Priority to JP2018055445A priority Critical patent/JP2019169579A/ja
Priority claimed from JP2018055445A external-priority patent/JP2019169579A/ja
Priority to US15/998,401 priority patent/US10985104B2/en
Publication of JP2019169579A publication Critical patent/JP2019169579A/ja
Publication of JP2019169579A5 publication Critical patent/JP2019169579A5/ja
Pending legal-status Critical Current

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JP2018055445A 2018-03-23 2018-03-23 半導体装置及びその製造方法 Pending JP2019169579A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018055445A JP2019169579A (ja) 2018-03-23 2018-03-23 半導体装置及びその製造方法
US15/998,401 US10985104B2 (en) 2018-03-23 2018-08-15 Semiconductor device having electrode pad and electrode layer intervening semiconductor layer inbetween and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018055445A JP2019169579A (ja) 2018-03-23 2018-03-23 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2019169579A JP2019169579A (ja) 2019-10-03
JP2019169579A5 true JP2019169579A5 (enExample) 2020-03-05

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JP2018055445A Pending JP2019169579A (ja) 2018-03-23 2018-03-23 半導体装置及びその製造方法

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US (1) US10985104B2 (enExample)
JP (1) JP2019169579A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE212021000197U1 (de) * 2020-05-08 2022-01-19 Rohm Co., Ltd. Halbleitervorrichtung
US20220181290A1 (en) * 2020-12-03 2022-06-09 Semiconductor Components Industries, Llc Clip interconnect with micro contact heads
JP7750289B2 (ja) * 2021-07-01 2025-10-07 住友電気工業株式会社 差動信号伝送用ケーブル
IT202100021638A1 (it) * 2021-08-10 2023-02-10 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore, dispositivo a semiconduttore e assortimento di dispositivi a semiconduttore corrispondenti
JP7748924B2 (ja) * 2022-09-14 2025-10-03 株式会社東芝 半導体装置
JP7518317B1 (ja) * 2022-09-16 2024-07-17 ヌヴォトンテクノロジージャパン株式会社 半導体装置および実装基板
TWI881455B (zh) * 2023-09-07 2025-04-21 台星科企業股份有限公司 於晶圓基板背面貼合異質材料的方法
JP7745809B1 (ja) * 2024-03-26 2025-09-29 三菱電機株式会社 電力用半導体装置、電力用半導体装置の製造方法、電力用半導体モジュール及び電力変換装置

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US3892092A (en) 1974-05-17 1975-07-01 Buehler Ltd Automatic polishing apparatus
KR0144821B1 (ko) 1994-05-16 1998-07-01 양승택 저전원전압으로 작동가능한 갈륨비소 반도체 전력소자의 제조 방법
JP2004071886A (ja) 2002-08-07 2004-03-04 Renesas Technology Corp 縦型パワー半導体装置およびその製造方法
AU2003266560A1 (en) * 2002-12-09 2004-06-30 Yoshihiro Hayashi Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
JP4745251B2 (ja) * 2004-12-22 2011-08-10 三菱電機株式会社 半導体装置
JP2008305948A (ja) * 2007-06-07 2008-12-18 Denso Corp 半導体装置およびその製造方法
JP2010092895A (ja) * 2008-10-03 2010-04-22 Sanyo Electric Co Ltd 半導体装置及びその製造方法
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JP5045613B2 (ja) 2008-08-25 2012-10-10 三菱マテリアル株式会社 パワーモジュール用基板及びその製造方法
TW201015718A (en) 2008-10-03 2010-04-16 Sanyo Electric Co Semiconductor device and method for manufacturing the same
JP5428362B2 (ja) 2009-02-04 2014-02-26 富士電機株式会社 半導体装置の製造方法
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JPWO2015029152A1 (ja) 2013-08-28 2017-03-02 株式会社日立製作所 半導体装置
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