JP2019169579A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2019169579A JP2019169579A JP2018055445A JP2018055445A JP2019169579A JP 2019169579 A JP2019169579 A JP 2019169579A JP 2018055445 A JP2018055445 A JP 2018055445A JP 2018055445 A JP2018055445 A JP 2018055445A JP 2019169579 A JP2019169579 A JP 2019169579A
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- copper
- semiconductor device
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- electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 255
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000010949 copper Substances 0.000 claims abstract description 162
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 141
- 229910052802 copper Inorganic materials 0.000 claims abstract description 141
- 229910052751 metal Inorganic materials 0.000 claims description 91
- 239000002184 metal Substances 0.000 claims description 91
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 73
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 71
- 238000000034 method Methods 0.000 claims description 38
- 229910052759 nickel Inorganic materials 0.000 claims description 30
- 239000010941 cobalt Substances 0.000 claims description 27
- 229910017052 cobalt Inorganic materials 0.000 claims description 27
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 27
- 238000009713 electroplating Methods 0.000 claims description 27
- 229910052742 iron Inorganic materials 0.000 claims description 26
- -1 iron ions Chemical class 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910001429 cobalt ion Inorganic materials 0.000 claims description 4
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims description 4
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims description 3
- 229910001453 nickel ion Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 116
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 63
- 229910052710 silicon Inorganic materials 0.000 description 63
- 239000010703 silicon Substances 0.000 description 63
- 238000007747 plating Methods 0.000 description 44
- 230000004888 barrier function Effects 0.000 description 34
- 239000000654 additive Substances 0.000 description 23
- 230000000996 additive effect Effects 0.000 description 23
- 229910000679 solder Inorganic materials 0.000 description 21
- 230000000694 effects Effects 0.000 description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- 229910052719 titanium Inorganic materials 0.000 description 14
- 239000000243 solution Substances 0.000 description 13
- 230000020169 heat generation Effects 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 9
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 229910001431 copper ion Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- ZXNLNZJZSYSNKM-UHFFFAOYSA-M potassium hydrogen peroxide hydroxide Chemical compound [OH-].[K+].OO ZXNLNZJZSYSNKM-UHFFFAOYSA-M 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
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- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Abstract
Description
第1の実施形態の半導体装置は、銅(Cu)を主成分とし、厚さが5μm以上50μm未満の第1の電極パッドと、銅を主成分とし、厚さが5μm以上50μm未満の電極層と、第1の電極パッドと電極層との間に設けられた半導体層と、を備える。
第2の実施形態の半導体装置は、第1の電極パッド及び電極層が、鉄(Fe)、コバルト(Co)、及び、ニッケル(Ni)から成る群から選ばれる少なくともいずれか一つの元素を含む点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については記述を省略する。
第3の実施形態の半導体装置は、銅(Cu)を主成分とし、鉄(Fe)、コバルト(Co)、及び、ニッケル(Ni)から成る群から選ばれる少なくともいずれか一つの元素を含み、厚さが5μm以上50μm未満の第1の電極パッドと、電極層と、第1の電極パッドと電極層との間に設けられた半導体層と、を備える。
11 半導体層
12 ソース電極パッド(第1の電極パッド)
13 ドレイン電極(電極層)
14 ゲート電極パッド(第2の電極パッド)
30 半導体チップ(半導体装置)
50 レジストパターン
100 半導体パッケージ(半導体装置)
102 ダイシングライン
P1 第1の面
P2 第2の面
W 半導体基板
Claims (17)
- 銅を主成分とし、厚さが5μm以上50μm未満の第1の電極パッドと、
銅を主成分とし、厚さが5μm以上50μm未満の電極層と、
前記第1の電極パッドと前記電極層との間に設けられた半導体層と、
を備える半導体装置。 - 前記第1の電極パッドの端部の厚さが中央部の厚さより厚い請求項1記載の半導体装置。
- 前記電極層の端部の厚さと中央部の厚さが略同一である請求項1又は請求項2記載の半導体装置。
- 前記電極層の端部が前記半導体層の端部よりも内側にある請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1の電極パッド及び前記電極層が、鉄(Fe)、コバルト(Co)、及び、ニッケル(Ni)から成る群から選ばれる少なくともいずれか一つの元素を含む請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第1の電極パッド及び前記電極層の中の前記元素の含有量が0.01原子%以上0.4原子%以下である請求項5記載の半導体装置。
- 前記元素は銅の結晶粒界に偏析している請求項5又は請求項6記載の半導体装置。
- 銅を主成分とし、厚さが5μm以上50μm未満の第2の電極パッドを更に備え、前記半導体層は前記第2の電極パッドと前記電極層との間に設けられた請求項1ないし請求項7いずれか一項記載の半導体装置。
- 銅(Cu)を主成分とし、鉄(Fe)、コバルト(Co)、及び、ニッケル(Ni)から成る群から選ばれる少なくともいずれか一つの元素を含み、厚さが5μm以上50μm未満の第1の電極パッドと、
電極層と、
前記第1の電極パッドと前記電極層との間に設けられた半導体層と、
を備える半導体装置。 - 前記第1の電極パッドの中の前記元素の含有量が0.01原子%以上0.4原子%以下である請求項9記載の半導体装置。
- 前記元素は銅の結晶粒界に偏析している請求項9又は請求項10記載の半導体装置。
- 第1の面と第2の面とを有する半導体基板の前記第2の面の側の周辺部が残存するよう前記第2の面の側の中央部を薄くし、
前記第1の面の側にレジストパターンを形成し、
電界めっき装置を用い電解めっき法により、前記第1の面の側に銅(Cu)を主成分とし厚さが5μm以上50μm未満の第1の金属膜と、前記第2の面の側に銅を主成分とし厚さが5μm以上50μm未満の第2の金属膜とを同時に形成する半導体装置の製造方法。 - 前記半導体基板が前記第1の面に所定の幅を有するダイシングラインを有し、
前記第2の金属膜の前記ダイシングラインに対応する部分を除去し、
前記ダイシングラインに沿って前記半導体基板を切断し、前記半導体基板から複数の半導体チップを形成する請求項12記載の半導体装置の製造方法。 - 前記電解めっき法により、前記第1の金属膜及び前記第2の金属膜を形成する際に、電界めっき液中に、鉄イオン、コバルトイオン、及び、ニッケルイオンから成る群から選ばれる少なくともいずれか一つのイオンを添加する請求項12又は請求項13記載の半導体装置の製造方法。
- 前記電界めっき液の中の3価の前記イオンの濃度をモニタし、モニタした結果に基づき2価の前記イオンの供給を行う請求項14記載の半導体装置の製造方法。
- 前記電解めっき法により、前記第1の金属膜及び前記第2の金属膜を形成する際に、前記半導体基板の前記第1の面の側と前記第2の面の側に異なる電圧を印加する請求項12ないし請求項15いずれか一項記載の半導体装置の製造方法。
- 前記電解めっき法により、前記第1の金属膜及び前記第2の金属膜を形成した後に、前記電界めっき装置を、60℃以上の水を用いて洗浄する請求項12ないし請求項16いずれか一項記載の半導体装置の製造方法。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008305948A (ja) * | 2007-06-07 | 2008-12-18 | Denso Corp | 半導体装置およびその製造方法 |
JP2010092895A (ja) * | 2008-10-03 | 2010-04-22 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2085406B1 (ja) | 1970-04-17 | 1973-10-19 | Elf | |
US3892092A (en) | 1974-05-17 | 1975-07-01 | Buehler Ltd | Automatic polishing apparatus |
KR0144821B1 (ko) | 1994-05-16 | 1998-07-01 | 양승택 | 저전원전압으로 작동가능한 갈륨비소 반도체 전력소자의 제조 방법 |
JP2004071886A (ja) | 2002-08-07 | 2004-03-04 | Renesas Technology Corp | 縦型パワー半導体装置およびその製造方法 |
US7545040B2 (en) * | 2002-12-09 | 2009-06-09 | Nec Corporation | Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device |
WO2006068082A1 (ja) * | 2004-12-22 | 2006-06-29 | Mitsubishi Denki Kabushiki Kaisha | 半導体装置 |
US8283051B2 (en) | 2008-08-07 | 2012-10-09 | Jx Nippon Mining & Metals Corporation | Plated product having copper thin film formed thereon by electroless plating |
JP5045613B2 (ja) | 2008-08-25 | 2012-10-10 | 三菱マテリアル株式会社 | パワーモジュール用基板及びその製造方法 |
TW201015718A (en) | 2008-10-03 | 2010-04-16 | Sanyo Electric Co | Semiconductor device and method for manufacturing the same |
JP5428362B2 (ja) | 2009-02-04 | 2014-02-26 | 富士電機株式会社 | 半導体装置の製造方法 |
JP2011077460A (ja) | 2009-10-02 | 2011-04-14 | Toyota Motor Corp | 半導体装置と、その製造方法 |
US8502274B1 (en) * | 2012-04-06 | 2013-08-06 | Infineon Technologies Ag | Integrated circuit including power transistor cells and a connecting line |
CN104350604B (zh) * | 2012-06-29 | 2017-02-22 | 松下知识产权经营株式会社 | 太阳能电池组件和太阳能电池组件的制造方法 |
WO2015029152A1 (ja) | 2013-08-28 | 2015-03-05 | 株式会社日立製作所 | 半導体装置 |
US10109609B2 (en) * | 2014-01-13 | 2018-10-23 | Infineon Technologies Austria Ag | Connection structure and electronic component |
JP2015231033A (ja) * | 2014-06-06 | 2015-12-21 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6338937B2 (ja) * | 2014-06-13 | 2018-06-06 | ローム株式会社 | パワーモジュールおよびその製造方法 |
JP6916426B2 (ja) * | 2014-09-02 | 2021-08-11 | 株式会社Flosfia | 積層構造体およびその製造方法、半導体装置ならびに結晶膜 |
DE102016104256B3 (de) * | 2016-03-09 | 2017-07-06 | Infineon Technologies Ag | Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand |
-
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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