JP5996244B2 - 半導体上の銅のめっき - Google Patents

半導体上の銅のめっき Download PDF

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Publication number
JP5996244B2
JP5996244B2 JP2012092885A JP2012092885A JP5996244B2 JP 5996244 B2 JP5996244 B2 JP 5996244B2 JP 2012092885 A JP2012092885 A JP 2012092885A JP 2012092885 A JP2012092885 A JP 2012092885A JP 5996244 B2 JP5996244 B2 JP 5996244B2
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JP
Japan
Prior art keywords
copper
plating
layer
wafer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2012092885A
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English (en)
Japanese (ja)
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JP2012237060A5 (enExample
JP2012237060A (ja
Inventor
ゲーリー・ハム
ジェイソン・エイ．リーズ
リンユン・ウェイ
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/011—Electroplating using electromagnetic wave irradiation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Sustainable Energy (AREA)
JP2012092885A 2011-04-19 2012-04-16 半導体上の銅のめっき Expired - Fee Related JP5996244B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161477155P 2011-04-19 2011-04-19
US61/477,155 2011-04-19

Publications (3)

Publication Number Publication Date
JP2012237060A JP2012237060A (ja) 2012-12-06
JP2012237060A5 JP2012237060A5 (enExample) 2016-06-09
JP5996244B2 true JP5996244B2 (ja) 2016-09-21

Family

ID=45976788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012092885A Expired - Fee Related JP5996244B2 (ja) 2011-04-19 2012-04-16 半導体上の銅のめっき

Country Status (7)

Country Link
US (1) US20140174936A1 (enExample)
EP (1) EP2514856A3 (enExample)
JP (1) JP5996244B2 (enExample)
KR (1) KR20150127804A (enExample)
CN (1) CN102787338B (enExample)
SG (1) SG185227A1 (enExample)
TW (1) TWI445847B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140008234A1 (en) * 2012-07-09 2014-01-09 Rohm And Haas Electronic Materials Llc Method of metal plating semiconductors
FR3002545B1 (fr) * 2013-02-22 2016-01-08 Alchimer Procede de formation d'un siliciure metallique a l'aide d'une solution contenant des ions or et des ions fluor
KR102245104B1 (ko) * 2013-06-17 2021-04-26 어플라이드 머티어리얼스, 인코포레이티드 웨트 웨이퍼 백 콘택을 사용하여 실리콘 관통 비아들을 구리 도금하기 위한 방법
CN104711648B (zh) * 2013-12-17 2019-08-16 Ykk株式会社 闪镀铜镀敷液
TWI638424B (zh) * 2014-11-10 2018-10-11 應用材料股份有限公司 利用濕式晶圓背側接觸進行銅電鍍矽穿孔的方法
CN105154936A (zh) * 2015-08-21 2015-12-16 无锡桥阳机械制造有限公司 一种稀土镧-铜-锌合金电镀液及其电镀方法
US9935004B2 (en) 2016-01-21 2018-04-03 Applied Materials, Inc. Process and chemistry of plating of through silicon vias
EP3617350A1 (en) * 2018-08-31 2020-03-04 Tubacex Upstream Technologies, S.A. Method for coating a metal part destined to be subjected to high contact pressures and metal part obtained therefrom
CN114351227B (zh) * 2021-03-18 2023-08-25 青岛惠芯微电子有限公司 电镀挂具和电镀装置
CN114351224B (zh) * 2021-03-18 2023-08-25 青岛惠芯微电子有限公司 电镀挂具和电镀装置
CN114351226B (zh) * 2021-03-18 2023-08-25 青岛惠芯微电子有限公司 电镀挂具和电镀装置
CN114381789B (zh) * 2021-03-18 2023-08-25 青岛惠芯微电子有限公司 电镀挂具和电镀装置
CN114351202B (zh) * 2021-03-18 2023-08-25 青岛惠芯微电子有限公司 晶圆的电镀方法
CN114351225B (zh) * 2021-03-18 2023-08-25 青岛惠芯微电子有限公司 电镀挂具和电镀装置

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US4251327A (en) * 1980-01-14 1981-02-17 Motorola, Inc. Electroplating method
US5011567A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Method of fabricating solar cells
JPH0544075A (ja) * 1991-08-15 1993-02-23 Nippon Riironaale Kk 無電解銅めつき代替銅ストライクめつき方法
GB2264717A (en) * 1992-03-06 1993-09-08 Zinex Corp Cyanide-free copper plating bath
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US6261954B1 (en) * 2000-02-10 2001-07-17 Chartered Semiconductor Manufacturing, Ltd. Method to deposit a copper layer
KR20020092444A (ko) * 2001-02-23 2002-12-11 가부시키 가이샤 에바라 세이사꾸쇼 구리-도금 용액, 도금 방법 및 도금 장치
WO2002086196A1 (en) * 2001-04-19 2002-10-31 Rd Chemical Company Copper acid baths, system and method for electroplating high aspect ratio substrates
EP1308541A1 (en) * 2001-10-04 2003-05-07 Shipley Company LLC Plating bath and method for depositing a metal layer on a substrate
US20040108217A1 (en) * 2002-12-05 2004-06-10 Dubin Valery M. Methods for forming copper interconnect structures by co-plating of noble metals and structures formed thereby
CN100576578C (zh) * 2006-04-20 2009-12-30 无锡尚德太阳能电力有限公司 制备太阳电池电极的方法及其电化学沉积装置
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CN101257059B (zh) * 2007-11-30 2011-04-13 无锡尚德太阳能电力有限公司 一种电化学沉积太阳能电池金属电极的方法
EP2141750B1 (en) * 2008-07-02 2013-10-16 Rohm and Haas Electronic Materials LLC Method of light induced plating on semiconductors
EP2157209B1 (en) * 2008-07-31 2014-10-22 Rohm and Haas Electronic Materials LLC Inhibiting Background Plating

Also Published As

Publication number Publication date
TWI445847B (zh) 2014-07-21
KR20150127804A (ko) 2015-11-18
SG185227A1 (en) 2012-11-29
CN102787338B (zh) 2016-02-24
EP2514856A3 (en) 2016-09-21
EP2514856A2 (en) 2012-10-24
JP2012237060A (ja) 2012-12-06
TW201250068A (en) 2012-12-16
CN102787338A (zh) 2012-11-21
US20140174936A1 (en) 2014-06-26

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