JP2012237060A5 - - Google Patents
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- Publication number
- JP2012237060A5 JP2012237060A5 JP2012092885A JP2012092885A JP2012237060A5 JP 2012237060 A5 JP2012237060 A5 JP 2012237060A5 JP 2012092885 A JP2012092885 A JP 2012092885A JP 2012092885 A JP2012092885 A JP 2012092885A JP 2012237060 A5 JP2012237060 A5 JP 2012237060A5
- Authority
- JP
- Japan
- Prior art keywords
- copper
- layer
- monovalent
- metal
- lower layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 6
- ARUVKPQLZAKDPS-UHFFFAOYSA-L Copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 4
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 4
- 239000005751 Copper oxide Substances 0.000 claims description 3
- 229910001431 copper ion Inorganic materials 0.000 claims description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical compound [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 claims description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 2
- 239000003638 reducing agent Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052803 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 230000002335 preservative Effects 0.000 claims 1
- 239000003755 preservative agent Substances 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000005749 Copper compound Substances 0.000 description 5
- 150000001880 copper compounds Chemical class 0.000 description 5
- ORTQZVOHEJQUHG-UHFFFAOYSA-L Copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- 229940108928 Copper Drugs 0.000 description 3
- OXBLHERUFWYNTN-UHFFFAOYSA-M Copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 229960003280 cupric chloride Drugs 0.000 description 2
- 229940045803 cuprous chloride Drugs 0.000 description 2
- 229960000355 Copper Sulfate Drugs 0.000 description 1
- 229960004643 Cupric oxide Drugs 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- SDFNZYMSEOUVIF-UHFFFAOYSA-N copper;methanesulfonic acid Chemical compound [Cu].CS(O)(=O)=O SDFNZYMSEOUVIF-UHFFFAOYSA-N 0.000 description 1
- QYCVHILLJSYYBD-UHFFFAOYSA-L copper;oxalate Chemical compound [Cu+2].[O-]C(=O)C([O-])=O QYCVHILLJSYYBD-UHFFFAOYSA-L 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
Description
１種以上の銅イオン源はめっき組成物中で可溶性である一価および二価銅化合物の形態で提供されうる。第二銅イオン（Ｃｕ２＋）を第一銅イオン（Ｃｕ＋）に還元し、そして第一銅イオンを一価の状態に維持するために、１種以上の還元剤がめっき組成物中に含まれる。一価銅めっき組成物に含まれうる銅化合物には、これに限定されないが、ホウフッ化銅、シュウ酸第二銅、塩化第一銅、塩化第二銅、硫酸銅、酸化銅およびメタンスルホン酸銅が挙げられる。塩化第一銅および塩化第二銅は一価銅イオン源として含まれうるが、好ましい銅化合物は酸化銅、硫酸銅、メタンスルホン酸銅および他の従来の非ハロゲン水溶性銅塩である。典型的には、銅化合物は硫酸銅およびメタンスルホン酸銅である。１種以上の銅化合物は一価銅組成物中に１ｇ／Ｌ〜４０ｇ／Ｌ、または例えば、５ｇ／Ｌ〜３０ｇ／Ｌの量で含まれうる。
Claims (7)
- ａ）前面、裏面およびＰＮ接合を含む半導体を提供し、下層を含む導電トラックのパターンを前記前面が含み、かつ前記裏面が金属接点を含んでおり；
ｂ）前記半導体を、第二銅イオンを第一銅イオンに還元し、かつ第一銅イオンを一価の状態に維持する１種以上の還元剤を含む一価銅めっき組成物と接触させ；並びに
ｃ）導電トラックの下層上に銅層を光誘起めっきによってめっきする；
ことを含む方法。 - 下層がニッケル、コバルト、パラジウム、銀またはモリブデンから選択される金属を含む、請求項１に記載の方法。
- 下層がケイ化金属である請求項１または２に記載の方法。
- 一価銅めっき組成物が、酸化銅、硫酸銅およびメタンスルホン酸銅から選択される１種以上の銅イオン源を含む、請求項１〜３のいずれか１項に記載の方法。
- 銅層が１μｍ〜５０μｍの厚さである、請求項１〜４のいずれか１項に記載の方法。
- 金属フラッシュ層または有機はんだ付け性保存剤を銅層上に堆積させることをさらに含む、請求項１〜５のいずれか１項に記載の方法。
- 一価銅めっき組成物のｐＨが７〜１２である請求項１〜６のいずれか１項に記載の方法。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161477155P | 2011-04-19 | 2011-04-19 | |
| US61/477,155 | 2011-04-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012237060A JP2012237060A (ja) | 2012-12-06 |
| JP2012237060A5 true JP2012237060A5 (ja) | 2016-06-09 |
| JP5996244B2 JP5996244B2 (ja) | 2016-09-21 |
Family
ID=45976788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012092885A Expired - Fee Related JP5996244B2 (ja) | 2011-04-19 | 2012-04-16 | 半導体上の銅のめっき |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20140174936A1 (ja) |
| EP (1) | EP2514856A3 (ja) |
| JP (1) | JP5996244B2 (ja) |
| KR (1) | KR20150127804A (ja) |
| CN (1) | CN102787338B (ja) |
| SG (1) | SG185227A1 (ja) |
| TW (1) | TWI445847B (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140008234A1 (en) * | 2012-07-09 | 2014-01-09 | Rohm And Haas Electronic Materials Llc | Method of metal plating semiconductors |
| FR3002545B1 (fr) * | 2013-02-22 | 2016-01-08 | Alchimer | Procede de formation d'un siliciure metallique a l'aide d'une solution contenant des ions or et des ions fluor |
| CN105308723B (zh) * | 2013-06-17 | 2019-01-01 | 应用材料公司 | 利用湿式晶片背面接触进行铜镀硅穿孔的方法 |
| CN104711648B (zh) * | 2013-12-17 | 2019-08-16 | Ykk株式会社 | 闪镀铜镀敷液 |
| TWI638424B (zh) * | 2014-11-10 | 2018-10-11 | 應用材料股份有限公司 | 利用濕式晶圓背側接觸進行銅電鍍矽穿孔的方法 |
| CN105154936A (zh) * | 2015-08-21 | 2015-12-16 | 无锡桥阳机械制造有限公司 | 一种稀土镧-铜-锌合金电镀液及其电镀方法 |
| WO2017127197A1 (en) | 2016-01-21 | 2017-07-27 | Applied Materials, Inc. | Process and chemistry of plating of through silicon vias |
| CN114351225B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 电镀挂具和电镀装置 |
| CN114351226B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 电镀挂具和电镀装置 |
| CN114351224B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 电镀挂具和电镀装置 |
| CN114351202B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 晶圆的电镀方法 |
| CN114351227B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 电镀挂具和电镀装置 |
| CN114381789B (zh) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | 电镀挂具和电镀装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3041255A (en) | 1960-03-22 | 1962-06-26 | Metal & Thermit Corp | Electrodeposition of bright nickel |
| US4251327A (en) * | 1980-01-14 | 1981-02-17 | Motorola, Inc. | Electroplating method |
| US5011567A (en) * | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
| JPH0544075A (ja) * | 1991-08-15 | 1993-02-23 | Nippon Riironaale Kk | 無電解銅めつき代替銅ストライクめつき方法 |
| GB2264717A (en) * | 1992-03-06 | 1993-09-08 | Zinex Corp | Cyanide-free copper plating bath |
| US5750018A (en) * | 1997-03-18 | 1998-05-12 | Learonal, Inc. | Cyanide-free monovalent copper electroplating solutions |
| US6054173A (en) * | 1997-08-22 | 2000-04-25 | Micron Technology, Inc. | Copper electroless deposition on a titanium-containing surface |
| US6261954B1 (en) * | 2000-02-10 | 2001-07-17 | Chartered Semiconductor Manufacturing, Ltd. | Method to deposit a copper layer |
| KR20020092444A (ko) * | 2001-02-23 | 2002-12-11 | 가부시키 가이샤 에바라 세이사꾸쇼 | 구리-도금 용액, 도금 방법 및 도금 장치 |
| WO2002086196A1 (en) * | 2001-04-19 | 2002-10-31 | Rd Chemical Company | Copper acid baths, system and method for electroplating high aspect ratio substrates |
| EP1308541A1 (en) * | 2001-10-04 | 2003-05-07 | Shipley Company LLC | Plating bath and method for depositing a metal layer on a substrate |
| US20040108217A1 (en) * | 2002-12-05 | 2004-06-10 | Dubin Valery M. | Methods for forming copper interconnect structures by co-plating of noble metals and structures formed thereby |
| CN100576578C (zh) * | 2006-04-20 | 2009-12-30 | 无锡尚德太阳能电力有限公司 | 制备太阳电池电极的方法及其电化学沉积装置 |
| CN100533785C (zh) * | 2006-06-05 | 2009-08-26 | 罗门哈斯电子材料有限公司 | 镀敷方法 |
| US20080035489A1 (en) * | 2006-06-05 | 2008-02-14 | Rohm And Haas Electronic Materials Llc | Plating process |
| US8058164B2 (en) * | 2007-06-04 | 2011-11-15 | Lam Research Corporation | Methods of fabricating electronic devices using direct copper plating |
| CN101257059B (zh) * | 2007-11-30 | 2011-04-13 | 无锡尚德太阳能电力有限公司 | 一种电化学沉积太阳能电池金属电极的方法 |
| EP2141750B1 (en) * | 2008-07-02 | 2013-10-16 | Rohm and Haas Electronic Materials LLC | Method of light induced plating on semiconductors |
| EP2157209B1 (en) * | 2008-07-31 | 2014-10-22 | Rohm and Haas Electronic Materials LLC | Inhibiting Background Plating |
-
2012
- 2012-04-16 JP JP2012092885A patent/JP5996244B2/ja not_active Expired - Fee Related
- 2012-04-17 TW TW101113558A patent/TWI445847B/zh not_active IP Right Cessation
- 2012-04-17 EP EP12164359.7A patent/EP2514856A3/en not_active Withdrawn
- 2012-04-18 SG SG2012028395A patent/SG185227A1/en unknown
- 2012-04-19 US US13/451,045 patent/US20140174936A1/en not_active Abandoned
- 2012-04-19 CN CN201210189836.1A patent/CN102787338B/zh not_active Expired - Fee Related
- 2012-04-19 KR KR1020120041124A patent/KR20150127804A/ko not_active Application Discontinuation
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