CN101887862B - 用于共晶焊的硅片背面金属化工艺 - Google Patents

用于共晶焊的硅片背面金属化工艺 Download PDF

Info

Publication number
CN101887862B
CN101887862B CN2009100987099A CN200910098709A CN101887862B CN 101887862 B CN101887862 B CN 101887862B CN 2009100987099 A CN2009100987099 A CN 2009100987099A CN 200910098709 A CN200910098709 A CN 200910098709A CN 101887862 B CN101887862 B CN 101887862B
Authority
CN
China
Prior art keywords
tin
thick
layer
alloy
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009100987099A
Other languages
English (en)
Other versions
CN101887862A (zh
Inventor
余之江
马洁荪
傅劲松
王国庆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HUAYUE MICROELECTRONICS CO Ltd
Original Assignee
HUAYUE MICROELECTRONICS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HUAYUE MICROELECTRONICS CO Ltd filed Critical HUAYUE MICROELECTRONICS CO Ltd
Priority to CN2009100987099A priority Critical patent/CN101887862B/zh
Publication of CN101887862A publication Critical patent/CN101887862A/zh
Application granted granted Critical
Publication of CN101887862B publication Critical patent/CN101887862B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

一种用于共晶焊的硅片背面金属化工艺，属于半导体器件制造工艺技术领域。该发明工艺使用锡(Sn)、铜(Cu)或锡、锑(Sb)的合金，合金蒸发采用特定的工艺条件，完全达到常规使用金系合金材料工艺的技术性能，且工艺性能有所突破，能满足小到0.30毫米×0.30毫米尺寸的管芯封装，具有成本低和适用面广的优点。

Description

用于共晶焊的硅片背面金属化工艺
技术领域
该发明是一种用于共晶焊的硅片背面金属化工艺，属半导体工艺技术领域。工艺使用了锡(Sn)、铜(Cu)或锡(Sn)、锑(Sb)的合金，合金采用特定的蒸发工艺，完全达到常规金系合金的技术性能，且工艺性能有所突破，更适应市场化，能满足小到0.30毫米×0.30毫米尺寸的管芯封装。
背景技术
中国专利CN1571131公布了一种表层为单质层锡(Sn)的三层共晶焊背金工艺，由于表层锡的化学性质不稳定，易氧化变黑，压焊不牢固，且划片时背金层边缘不齐整，实际使用受到限制。
中国专利CN1466172公布了蒸镀砷金的背金工艺，砷金层约厚2微米，且金的含量在80％以上，金(Au)用量大，存在单片加工成本高的缺点。
目前，共晶焊硅片背面金属化主流工艺技术有两类：一类是由金和金/砷合金两层构成，见中国专利CN1466172；第二类由多层金属组成，底层是钒(V)、钛(Ti)或铬(Cr)，第二层是镍(Ni)，表面由金(Au)系合金组成。常规工艺采用蒸发，各金属层蒸发速率一般为10～20埃/秒。这两类技术都要用到金，且金是其中主要组分，因此共晶焊硅片背面金属化的成本很高，工艺有待改进。
发明内容
本发明解决的技术问题是，提供了一种新型工艺，该工艺不使用金(Au)，且组分简单，既有效降低了现有硅片共晶焊背金成本，又能满足小管芯封装要求。
本发明特征工艺表述：背金层由三层组成，首层是600～
Figure G2009100987099D00012
厚钛，第二层是3000～
Figure G2009100987099D00013
厚的镍，表层是8000～厚的锡/铜或锡/锑合金，锡、铜合金中锡含量(60±5)％，铜含量为(40±5)％；锡、锑合金中锡含量(90±5)％，锑含量为(10±5)％。表层合金层采用35～45埃
Figure G2009100987099D00015
/秒的蒸发工艺。
本发明工艺特点在于使用不含金(Au)的合金材料，且采取特定的蒸发工艺后适用于小管芯的共晶封装。
附图说明
硅片背面金属结构示意图：表面层④(最上层)为锡/铜或锡/锑合金层。
                        中间层③为镍金属层。
                        底层②(与硅片背面接触)为钛金属层。
                        基片①为硅片。
具体实施方式
加工工艺步骤依次为：
1.锡/铜或锡/锑合金材料备料。
2.硅片背面减薄，减薄后要求毛躁度5000～
Figure G2009100987099D00021
3.清洗。
4.清洗后一小时内硅片进蒸发炉蒸发。
5.蒸发。顺序为：600～
Figure G2009100987099D00022
厚的钛→3000～
Figure G2009100987099D00023
厚的镍→8000～
Figure G2009100987099D00024
厚的锡/铜或锡/锑合金。第一、二层蒸发速率为10～20埃/秒，第三层蒸发速率为35～45埃/秒。
6.硅片出炉后检测。

Claims (1)

1.一种用于共晶焊的硅片背面金属化工艺，其特征在于：背面金属由三层组成，首层是
Figure FSB00000817937600011
厚钛，第二层是
Figure FSB00000817937600012
厚的镍，表层是
Figure FSB00000817937600013
厚的锡/铜合金；蒸发顺序为
Figure FSB00000817937600014
Figure FSB00000817937600015
厚的钛，
Figure FSB00000817937600016
厚的镍，
Figure FSB00000817937600017
厚的锡/铜合金，钛、镍层蒸发速率为10～20埃/秒，锡/铜合金层35～45埃/秒的蒸发工艺，所述的锡/铜合金中的锡含量为(60±5)％，铜含量为(40±5)％。
CN2009100987099A 2009-05-13 2009-05-13 用于共晶焊的硅片背面金属化工艺 Expired - Fee Related CN101887862B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009100987099A CN101887862B (zh) 2009-05-13 2009-05-13 用于共晶焊的硅片背面金属化工艺

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009100987099A CN101887862B (zh) 2009-05-13 2009-05-13 用于共晶焊的硅片背面金属化工艺

Publications (2)

Publication Number Publication Date
CN101887862A CN101887862A (zh) 2010-11-17
CN101887862B true CN101887862B (zh) 2012-12-05

Family

ID=43073704

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009100987099A Expired - Fee Related CN101887862B (zh) 2009-05-13 2009-05-13 用于共晶焊的硅片背面金属化工艺

Country Status (1)

Country Link
CN (1) CN101887862B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102254843B (zh) * 2011-06-27 2013-01-09 江阴新顺微电子有限公司 适用于共晶封装的半导体芯片背面金属化方法
CN103963375B (zh) * 2013-01-30 2016-12-28 苏州同冠微电子有限公司 硅片背面金属化共晶结构及其制造工艺
TWI616002B (zh) * 2013-12-30 2018-02-21 新世紀光電股份有限公司 發光晶片
CN104299922A (zh) * 2014-11-03 2015-01-21 苏州同冠微电子有限公司 背面金属化共晶工艺方法
CN106048543B (zh) * 2016-06-02 2018-08-03 泉州市依科达半导体致冷科技有限公司 半导体晶片表面真空镀膜工艺

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1386887A (zh) * 2002-04-29 2002-12-25 戴国水 无铅喷金料及其制备方法
CN1571131A (zh) * 2004-04-22 2005-01-26 吉林华微电子股份有限公司 半导体芯片背面共晶焊粘贴方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1386887A (zh) * 2002-04-29 2002-12-25 戴国水 无铅喷金料及其制备方法
CN1571131A (zh) * 2004-04-22 2005-01-26 吉林华微电子股份有限公司 半导体芯片背面共晶焊粘贴方法

Also Published As

Publication number Publication date
CN101887862A (zh) 2010-11-17

Similar Documents

Publication Publication Date Title
CN101887862B (zh) 用于共晶焊的硅片背面金属化工艺
CN100468713C (zh) 半导体晶片焊料凸块结构及其制造方法
US20240088087A1 (en) Electronic device with multi-layer contact and system
CN103681614B (zh) 凸块结构及其形成方法
US8309395B2 (en) Method of fabricating a high-temperature compatible power semiconductor module
TW201113962A (en) Chip having metal pillar structure
TWI458639B (zh) A method for selective metallization on a ceramic substrate
JP2011023721A5 (zh)
JP2003338517A (ja) 基板上に無鉛はんだ合金を形成する方法
CN103715171B (zh) 导电金属互联线及其制备方法
JP2008543049A5 (zh)
CN102064120A (zh) 一种基于铟凸点的无助焊剂回流工艺方法
JP5725061B2 (ja) パワーモジュール用基板、及びヒートシンク付パワーモジュール用基板
KR20180043282A (ko) 간격을 가진 나노로드 및 공정 합금을 이용한 저온 용접
KR101359733B1 (ko) 반도체 3차원 적층공정에서의 이중 확산방지층을 포함하는 범프 및 그 제조방법
WO2010047010A1 (ja) 半導体装置及びその製造方法
CN203242615U (zh) 一种电子产品用焊接基片
JP2008047604A5 (zh)
CN203013710U (zh) 半导体器件的封装件
CN104465573B (zh) 一种以FeNi合金或FeNiP合金作为反应界面层的柱状凸点封装结构
CN106653718B (zh) 用于共晶焊的硅片背面金属化结构及加工工艺
CN203456442U (zh) 低成本、高适用性共晶装片半导体芯片背面金属化结构
JP2011051015A5 (zh)
JP2734960B2 (ja) フリップチップバンプ及びその製造方法
JP2016149448A (ja) 半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121205

Termination date: 20190513