TW540276B - Solder point with low speed of consuming nickel - Google Patents
Solder point with low speed of consuming nickel Download PDFInfo
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- TW540276B TW540276B TW91117796A TW91117796A TW540276B TW 540276 B TW540276 B TW 540276B TW 91117796 A TW91117796 A TW 91117796A TW 91117796 A TW91117796 A TW 91117796A TW 540276 B TW540276 B TW 540276B
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本發明是有關於一種銲點結構 b 4-.ϊ 德拉丄 w 催纤細々口偁,且特y丨丨3 種错由控制銲 荷別疋有關於一 鎳層之間所產生的雍 k擇~點與接點之 返率。 ”5之鎳層的消耗 可或社在Μ現今資訊世代的社會下,電子產品已變成人槪 =:的曰常用品,而電子產品 成人類不 過封裝的步驟,曰Μ +处命AL Μ ; 1更疋日日片,必須透 用Ρ日制 日日片才旎與外部電路電性連接,比如9 4丨 用覆晶製程與基板電性造 品盆k1 比如疋利The present invention relates to a solder joint structure b 4-.ϊ 丄 丄 纤 催 催 々 偁, and special y 丨 丨 3 kinds of errors caused by the control of welding load 疋 k k generated between a nickel layer Select the return rate of ~ points and contacts. "The consumption of the nickel layer of 5 may be under the current information generation society of M, electronic products have become common products, and electronic products become human but packaging steps, said M + execution AL Μ; For more Japanese and Japanese films, you must use Japanese-made Japanese-Japanese films to electrically connect with external circuits, such as 9 4 丨 using a flip-chip process and the substrate electrical production basin k1 such as
刷電路拓f π : 連接,而基板可以再利用銲接盥HP 連接。其中晶片、基板及印刷電路ίί間: 的工作,祐日、萝坦w M i f疋貝貝冤千π件間電性連接 亚且還提供機械支撐。故銲點本身之機;Β Μ所庙 強,辉點盘雷^ & 歲械性貝要 2 ”、,1、電子兀件之接點間的銲接性質也 J成電子元件的損害。事實i,電子元件百分:八 均ΐ直接或間接來自銲點’故銲點本身性質及其銲 接性貝的提升便顯得相當重要。 、八、 -睛參照第1圖,其繪示習知電子元件之接點及銲點的 不意圖。一_般而言,電子元件1〇〇具有多個接點, 1圖中僅繪示其中的一個,接點丨丨〇視其應用範圍在業 界常習稱為鋒墊(s〇ldering Pad)或隆點金屬化層(under、 bump metallurgy)。其中接點11()可以是由一銅層112、一 錄層114及一金層116所構成,鎳層114係位在銅層112上, 金層11 6係位在鎳層11 4上,而銲點丨2 〇係形成在金層丨i 6 上。當銲點1 2 0尚未形成在接點丨丨〇上時,藉由金層丨丨6可 以防止接點11 0的表面氧化,並且當接點丨丨〇在與銲點1 2 〇The brush circuit topology f π: connection, and the substrate can be reused for soldering HP connection. Among them are wafers, substrates, and printed circuits: the work of Yori, Rotan, and others is electrically connected to each other and also provides mechanical support. Therefore, the solder joint itself is strong; the BM is strong, the bright spot disk is ^ & the old mechanical shell is 2 ",, 1, the soldering properties between the contacts of the electronic components are also damage to the electronic components. Facts i. Percentage of electronic components: Hachijun comes directly or indirectly from solder joints. Therefore, the properties of solder joints and the improvement of their solderability are very important. Refer to Figure 1 for details. It is not intended that the contacts and solder joints of the components. Generally speaking, the electronic component 100 has multiple contacts. Only one of them is shown in the figure. It is called a soldering pad or bump metallurgy. The contact 11 () can be composed of a copper layer 112, a recording layer 114, and a gold layer 116. Nickel The layer 114 is located on the copper layer 112, the gold layer 116 is located on the nickel layer 11 4 and the solder joint 丨 2 0 is formed on the gold layer 丨 i 6. When the solder joint 1 2 0 has not been formed on the contact丨 丨 〇, the gold layer 丨 丨 6 can prevent the surface oxidation of the contact 11 0, and when the contact 丨 丨 〇 and the solder joint 1 2 〇
9468twf.ptd 第4頁 540276 五、發明說明(2) 接合時,藉由金層11 6還可以增加銲點1 2 0與接點11 〇間的 潤濕(wetting)性質。而鎳層114的主要功用係作為銅層 11 2與知*點1 2 0間之擴散P早礙層’以防止銅層112直接鱼鮮 點1 2 0相接觸,而造成銅層11 2消耗太快的情形發生。而鲜 點120比如是含錫的合金。 在銲接之初,金層116會以極快的速度進入銲點12〇 内部,並形成(Au,Ni)Sn4化合物。在金層116消失後,其 底下的錄層114則開始與銲點120接觸,並反應生成Ni3Sn4 化合物,由於Ni3Sn4化合物的生成會使鎳層114消耗很 快,當鎳層11 4被消耗光之後,其底下的銅層丨丨2則會因 去鎳層114的屏障而開始快速地與銲點12〇反應。 二T反應相較於鮮點12°與鎳層114的反應= 上一個數Ϊ級以上。故在失去鎳層114之屏障後,晋陕 ,是銅層U2將被辉點12〇快速耗盡。繼錄们 ^9468twf.ptd Page 4 540276 V. Description of the invention (2) When bonding, the wetting property between the solder joint 1 2 0 and the contact 11 0 can be increased by the gold layer 116. The main function of the nickel layer 114 is to act as a diffusion layer P between the copper layer 11 2 and the known point 120, so as to prevent the copper layer 112 from directly contacting the fish fresh point 1 2 0, which causes the copper layer 112 to be consumed. Too fast happens. The fresh spot 120 is, for example, an alloy containing tin. At the beginning of welding, the gold layer 116 will enter the interior of the solder joint 120 at a very fast speed and form (Au, Ni) Sn4 compound. After the gold layer 116 disappears, the underlying recording layer 114 starts to contact the solder joint 120 and reacts to form a Ni3Sn4 compound. The formation of the Ni3Sn4 compound will cause the nickel layer 114 to be consumed quickly. After the nickel layer 114 is consumed, The copper layer underneath it will quickly react with the solder joint 120 by removing the barrier of the nickel layer 114. The two-T reaction is compared with the reaction with the nickel layer 114 at a fresh point of 12 ° = the previous order of magnitude or more. Therefore, after losing the barrier of the nickel layer 114, Jinshan is the copper layer U2 will be quickly depleted by the bright point 120. Recorders ^
成枝為脆弱,易發生斷路的現象。 I 因此本發明的目的就是一 =點所含的銅濃度,來選擇=-與,二二構’藉由 為達成本發明之上鎳層的消耗速率。 適於配置在一接點±,# '、目的,提出一種銲點, 设點上,接點至少白扭一 材質包括銅,ϋ由控制鋼在量2中銲點的 消耗速率。絲目而能夠降低接點之錄層中的錄被 540276 發明說明(3) a 依&照本發明的一較佳實施例,其中銲點的材質可以 5 a金 锡斜銅合金或錫銀銅合金。而上述之接點可 、 置在曰曰片上、基板上或印刷電路板上。另外,鎳層的 厚介t5〇〇J:矣到15微米之間,並且在鎳層*還可以曰添 γΠ'气磷、鈷、銅或釩。此外,銲點中銅的濃度係介於 0 · 0 5 %到5 %之間。 田 为汗,爪照奉發明的一較佳實施例,形成含有銅的 ===方式包括有四種,第一種方式係以電鍍或網板印刷 4 f i在施加銲料到接點上時,就直接施加含有銅的銲 U:種方式係將銲點與另一接點接合,而另-接點的 貝匕銅,使得另一接點的銅會擴散到銲點中;第三種 方式係將銲點與接點間還加入一銅層,而銅層的銅原^合 擴散到銲點中;第四種方式係在鎳層中還添加銅原子,ς 成一鎳銅合金,以增加接點與銲點之界面間銅的含量。7 再者,依照本發明的一較佳實施例,接點還包括一 銅層及一金層,而鎳層係位在銅層上,金層係位在鎳層 上’銲點係位在金層上,此時界面生成物可以為 ; 的(Cu,Au,Ni)6Sn5 化合物、或為(Cu,Au,Ni)6Sn 盘式Branching is fragile and prone to disconnection. Therefore, the object of the present invention is to select the copper concentration contained in one point, and to select = -and, di-binary structure 'to achieve the consumption rate of the nickel layer on the invention. Suitable for arranging a contact ±, # ', the purpose is to propose a solder joint. At the point of setting, the contact is at least white twisted. The material includes copper, and the consumption rate of the solder joint in volume 2 is controlled by the steel. It can reduce the recording in the recording layer of the contact 540276. Description of the invention (3) a According to a preferred embodiment of the present invention, the material of the solder joint can be 5 a gold-tin oblique copper alloy or tin-silver Copper alloy. The above contacts can be placed on a chip, a substrate or a printed circuit board. In addition, the thickness of the nickel layer is between 500 μm: 15 μm and 15 μm, and the nickel layer * may be added with γΠ ′ gas phosphorus, cobalt, copper, or vanadium. In addition, the copper concentration in the solder joint is between 0 · 0 5% and 5%. Tian Weihan, a claw according to a preferred embodiment of the invention, there are four ways to form copper containing ===. The first way is to plate or screen print 4 fi when applying solder to the contacts. Just apply the solder containing copper U: one way is to join the solder joint with another joint, and the copper of the other joint makes the copper of the other joint diffuse into the solder joint; the third way A copper layer is added between the solder joint and the contact, and the copper element of the copper layer diffuses into the solder joint. The fourth method is to add copper atoms to the nickel layer to form a nickel-copper alloy to increase Copper content at the interface between contacts and solder joints. 7 Furthermore, according to a preferred embodiment of the present invention, the contacts further include a copper layer and a gold layer, and the nickel layer is located on the copper layer, and the gold layer is located on the nickel layer. On the gold layer, the interface product at this time can be (Cu, Au, Ni) 6Sn5 compound, or (Cu, Au, Ni) 6Sn disc type
(Ni,Cu)3Sn4之混合形式的化合物。若是在不含有金声的 ^兄下’則界面生成物可以為連續形式的(Cu,Ni)6sJ化 a 勿、或為(Cu,Ni)6Sn5.(Ni,Cu)3Sn4 之混合形式 合物。 G 含的:述來選本二=構Compounds in the form of (Ni, Cu) 3Sn4. If it does not contain gold sound, the interface product can be continuous (Cu, Ni) 6sJa, or a mixture of (Cu, Ni) 6Sn5. (Ni, Cu) 3Sn4 . G Contains: Shulai Anthology II = Construction
9468twf.ptd $ 6頁 540276 五、發明說明(4) 生成物’以降低接點之鎳層的消耗速率。若接點在含有金 層的情況下’則可以選擇生成(Cu,Au,Ni)6Sn5化合物、 或(Cu,Au,Ni)6Sn5與(Ni,Cu)3Sn4之混合形式的化合 物’右接點在不含有金層的情況下,則可以選擇生成(Cu,9468twf.ptd $ 6 page 540276 V. Description of the invention (4) Product ’to reduce the consumption rate of the nickel layer of the contact. If the contact contains a gold layer, you can choose to generate (Cu, Au, Ni) 6Sn5 compounds, or (Cu, Au, Ni) 6Sn5 and (Ni, Cu) 3Sn4 mixed compounds' right contact In the absence of a gold layer, you can choose to generate (Cu,
Ni)6Sn5 化合物、或(Cu,Ni)6Sn5 與(Ni,Cn)3Sn4 之混合 形式的化合物。 為β讓本發明之上述和其他目的、特徵、和優點能更 明顯易懂’下文特舉一較佳實施例,並配合所附圖式,作 詳細說明如下: 圖式之標示說明: 100 電子元件 110 接點 112 銅層 114 鎳層 116 金層 120 銲點 200 晶片 210 接點 212 銅層 214 鎳層 216 金層 220 銲點 510 直線Ni) 6Sn5 compound, or a mixture of (Cu, Ni) 6Sn5 and (Ni, Cn) 3Sn4. For β to make the above and other objects, features, and advantages of the present invention more comprehensible, hereinafter, a preferred embodiment is described in detail, and in conjunction with the accompanying drawings, the detailed description is as follows: Symbols of the drawings: 100 electronics Element 110 contact 112 copper layer 114 nickel layer 116 gold layer 120 solder joint 200 wafer 210 contact 212 copper layer 214 nickel layer 216 gold layer 220 solder joint 510 straight
9468twf.ptd 第7頁 540276 五、發明說明(5) 520 直線 530 直線 800 晶片 810 接點 820 銲點 830 基板 840 接點 900 晶片 910 接點 912 銅層 914 錄層 916 金層 920 銲點 990 銅層 實施例 本發明欲藉由控制銲 銲點與接點之鎳層之間所產/ a w奶你丁,展反,+ 一仔 七姓既ΛΑ 4 , 门所產生的反應生成物,以降低接點 之錄層的消耗速率。盆中技Μ 一 不疋午,、甲接點及銲點的結構可以如第2圖 所不,接點210比如是配置在一晶片2〇〇上,而接點21〇是 由銅層212、鎳層214及金層216所構成,其中鎳層214可以 疋利用無電電鍍、電鍵、錢鍵或蒸錢的方式形成在銅層 212上’其中鎳層214的厚度比如是介於500埃到1微米之9468twf.ptd Page 7 540276 V. Description of the invention (5) 520 straight 530 straight 800 wafer 810 contact 820 solder joint 830 substrate 840 contact 900 wafer 910 contact 912 copper layer 914 recording layer 916 gold layer 920 solder joint 990 copper Layer Example The present invention intends to reduce the reaction products produced by the gate by controlling the production between the solder joint and the nickel layer of the joint. Consumption rate of the contact layer. In the middle of the basin, the structure of the A contacts and solder joints can be as shown in Figure 2. The contact 210 is configured on a wafer 200, and the contact 21 is a copper layer 212. , A nickel layer 214 and a gold layer 216, wherein the nickel layer 214 can be formed on the copper layer 212 by means of electroless plating, electrical bonding, coin bonding, or steaming. 1 micron
9468twf.ptd 第8頁 540276 五、發明說明(6) -- 間;而金層216可以是利用無電電鍍、電鍍、濺鍍或蒸鑛 的方式形成在鎳層21 4上;而銲點2 20可以是利用電鑛”或^罔 板印刷加迴銲的方式形成在金層21 6上。然而本發明的接 點亦可以配置在一基板上或一印刷電路板上,其中鎳層可 以疋利用電鑛或無電電鐘的方式形成在銅層上,鎳層的厚 度比如是介於1微米到1 5微米之間;而金層可以是利用盔 電電鍍、或電鍍的方式形成在鎳層上;而銲點可以是利用 網板印刷加迴銲的方式或是植銲球加迴銲的方式形成在金 L上i另外,銲點220材質比如是錫敍合金加銅的材質或 錫銀合金加銅的材質,其詳細說明如下所述。 錫斜銅系列銲料與含鎳層之接點反應 凊參照第2A圖、第2B圖、第2c圖及第⑽圖,盆由给 2 A圖係繪示錫鉛合金之銲點與接$ ° 八中第 岡 ^ 安點1^接約2分鐘後的今相 圖,第2Β圖係繪示含有0.1wte% Cu 俊的金相 接點銲接約2分鐘後的金相圖,第2 、〇各』一口至之銲點與9468twf.ptd Page 8 540276 V. Description of the invention (6)-time; and the gold layer 216 can be formed on the nickel layer 21 4 by means of electroless plating, electroplating, sputtering or evaporation; and the solder joint 2 20 It can be formed on the gold layer 21 6 by means of “electric ore” or plate printing and re-soldering. However, the contacts of the present invention can also be arranged on a substrate or a printed circuit board, in which the nickel layer can be used. An electrical ore or non-electrical clock is formed on the copper layer. The thickness of the nickel layer is, for example, between 1 micrometer and 15 micrometers. The gold layer can be formed on the nickel layer by helmet electroplating or electroplating. The solder joints can be formed on the gold L by screen printing and reflow soldering or solder ball and reflow soldering. In addition, the material of the solder joint 220 is, for example, a tin alloy with copper or a tin-silver alloy. The material for adding copper is described in detail as follows. The reaction of the contact between the tin oblique copper series solder and the nickel-containing layer. Refer to Figure 2A, 2B, 2c, and ⑽. The solder joints of the tin-lead alloy are shown. The second phase of the 8th Middle School ^ Andian 1 ^ is about 2 minutes later. The first line shows 2Β FIG welded joint microstructure comprising 0.1wte% Cu Jun about 2 minutes after the phase diagram, the second, each square "to one of the pads and
Cu之锡錯銅合金之銲點與接點銲接㈤八、二=含有〇· 5wt· 〇/〇 第2D圖係繪示含有L5wt.% Cu之j2刀人1 里後的金相圖, 銲接約2分鐘後的金相圖。銲接前,、口金之銲點與接點 微米到1· 2微米之間,鎳層的厚声# έ二的厚度係約為0· 8 pa > / 1係約為6微米至ι| 8 間,而銅層的厚度係約為7微米。ώ π卞幻8镞未之 2C圖及第2D圖可知,隨著銅的漠声 曰、第2B圖、第 形式的生成物。當加入銅於銲點日使界面出現不同 接點間的界面生成物將由原先I的,辰度上升時,銲點與 尤早—、且連續之Ni3Sn4層Soldering and soldering of Cu-tin-copper alloys ㈤8, 2 = Contains 0.5wt. 〇 / 〇 The 2D picture shows a metallographic diagram of j2 knife 1 containing L5wt.% Cu. Welding approx. Metallographic picture after 2 minutes. Before welding, between the thickness of the gold joint and the contact micrometer to 1.2 micrometers, the thickness of the nickel layer is thick. The thickness is about 0 · 8 pa > / 1 is about 6 microns to ι | 8 The thickness of the copper layer is about 7 microns. Free 卞 卞 卞 8 镞 未 之 2C and 2D, we can see that with the indifference of copper, Figure 2B, the second form of the product. When copper is added to the solder joint and the interface appears different, the interface products between the joints will change from the original I, and the solder joint will be especially early—and continuous Ni3Sn4 layer.
540276 五、發明說明(7) -----—— (第2A圖),逐漸轉變為(Ni,Cu)3Sn4與(Cu,Au,n 之混合型式(第2B圖)。若加入銅於銲點中的濃度日±, 則鈐點與接點間的界面生成物將轉變為一連 |540276 V. Description of the invention (7) --------- (Figure 2A), gradually transformed into a mixed type of (Ni, Cu) 3Sn4 and (Cu, Au, n (Figure 2B). If copper is added in If the concentration in the solder joint is ±, the interface product between the joint and the joint will be transformed into a continuous |
Ni)6Sn5 層(第2C 圖及第2D 圖)。 '、 ,AU, 為更凸顯銅對界面生成物的影響,本研究特將 時間延長至4小時。請參照第3A圖及第3B圖,其中第“ 係繪示錫鉛合金之銲點與接點銲接約4小時後且維持在σ 225〇C下的金相圖,第3Β圖係繪示含有15wt% Cu之錫鉛 銅合金之銲點與接點銲接約4小時後且維持在225〇(:下的金 相圖。由第3A圖及第3B圖可知,雖然加入銅的銲點可長出 較厚的界面生成物,然而其接點中殘餘的鎳層也是較厚。 另外,經ΕΡΜΑ的鑑定可得知,在第3A圖中,接點與錫鉛合 金銲點間的界面生成物係為Ni3Sn4,在第3B圖中,接點與 含有1 · 5wt· % Cu之錫鉛銅合金銲點間的界面生成物係為 (Cu,Au,Ni)6Sn5。故銲接時,若使界面長出(Cu,Au, N i) 6 S η 5的確有利於降低接點中鎳層的消耗速率。 為了更快了解銲點於日常使用的狀態,加速銲點老 化之固態熱處理是常被使用的一種方式。本研究特於銲接 後再使銲點經160〇C之固態熱處理,以了解其於日常使用 的狀態。第4 A圖係繪示錫鉛合金之銲點與接點銲接約2 〇 〇 〇 小時後且維持在1 6 0oC下的金相圖,由第4 A圖可知經熱處 理後,除一層約13微米厚的Ni3Sn4生成外,界面上則更有 另一層約14微米厚的(Au, Ni)Sn4生成,而接點中鎳層的 厚度僅剩下約1. 7微米。Ni) 6Sn5 layer (Figure 2C and 2D). ',, AU, In order to highlight the effect of copper on interface products, this study extended the time to 4 hours. Please refer to FIG. 3A and FIG. 3B, wherein the “series” shows a metallographic diagram of soldering and soldering of a tin-lead alloy after about 4 hours and is maintained at σ 225 ° C, and the third series is a diagram containing 15wt% Cu tin-lead-copper alloy solder joints and joints were welded for about 4 hours and maintained at a metallurgical diagram below 225 °. It can be seen from Figures 3A and 3B that although copper-added solder joints can grow A thicker interface product is produced, but the nickel layer remaining in the contacts is also thicker. In addition, according to the EPA's identification, it can be seen that in Figure 3A, the interface product between the contact and the tin-lead alloy solder joint The system is Ni3Sn4. In Figure 3B, the interface product between the contact and the tin-lead-copper alloy solder joint containing 1.5 wt.% Cu is (Cu, Au, Ni) 6Sn5. Therefore, if the interface is Grow out (Cu, Au, Ni) 6 S η 5 is indeed beneficial to reduce the consumption rate of the nickel layer in the contact. In order to understand the state of the solder joint in daily use more quickly, solid state heat treatment to accelerate solder joint aging is often used A method of this study. After welding, the solder joint is subjected to a solid state heat treatment at 160 ° C to understand its state in daily use. Figure 4A shows a metallographic diagram of soldering and soldering of tin-lead alloy after about 2000 hours and maintained at 160oC. From Figure 4A, it can be seen that after heat treatment, a layer of about 13 microns is removed. 7 微米。 Outside the thick Ni3Sn4 generated, there is another layer of about 14 microns thick (Au, Ni) Sn4 generated on the interface, and the thickness of the nickel layer in the contact is only about 1. 7 microns.
9468twf.ptd 第10頁 五、發明說明(8) 若銲點内含有鋼 一番景象,如第4B圖 -、、j銲點與接點間的界面又是另 % Cu之錫鉛銅合金二在曰=’其中第4B圖係繪示含有0. 5)η 在160〇C下的金相圖。、^點與接點鲜接約2000小時後且維持 由ΕΡΜΑ、XRD及TEM的梦—|面上僅發現單一之生成物,經 Ni)6Sn5化合物。在録^疋,此界面生成物係為(Cu,Au, 外,並未發現有(Au,二士二,了(Cu^ Au,Ni)6Sn5 有銅時,的確可抑制(Au 、=在,這意謂當銲點内含 圖中,接點中錄層的厚的生成。另外,在第4B “圖所示的結果之後旱微米’在相較於第 幅降低接點中錄層的當薛點内含有銅時,可以大9468twf.ptd Page 10 V. Description of the invention (8) If the solder joint contains a scene of steel, as shown in Figure 4B, the interface between the solder joint and the joint is another Cu-Sn-Pb-Cu alloy. Zai = 'wherein Figure 4B is a metallographic diagram containing 0.5) η at 160 ° C. After about 2,000 hours of contact, contact, and contact were maintained and maintained. Only a single product was found on the surface of EPMA, XRD, and TEM. The Ni) 6Sn5 compound was found. In ^ 疋, the product of this interface is (Cu, Au, except that (Au, Ershi Er, (Cu ^ Au, Ni) 6Sn5) can be suppressed when there is copper (Au, = in This means that when the solder joint contains a picture, the thickness of the recording layer in the contact is generated. In addition, after the results shown in Figure 4B, the dry micron ' When the Xue point contains copper, it can be large
人全错為f/JV步了解在接點中不含金層的情況下,锡金LPeople are totally wrong for f / JV steps. Under the condition that the contact does not contain a gold layer, Sikkim L
之錄層的影響,本研究亦著手進行錫么 =::ίΛ 之銲接工作,其中錄層係形成在銅層上,D #終m Γ 錄層如第4C圖所示,其中第4C圖 :二不錫鉛合金之銲點與鎳/銅接點銲接約2000小時後且 、,寺在160〇C下的金相圖。相較於第4A圖,在第仏圖中由 於接點並不含有金層,故理所當然地此銲點是不會有(八小 Ni)Sn4生成的。此時在界面上,則僅發現單一之Νί3§η4, ^。值得注意的是,界面Ni3Sn4的厚度卻僅約9微米,此 厚度則明顯薄於第4A圖中界面Ni3Sn4之厚度。此結果意謂 當界面(Au,Ni)Sn4覆蓋於界面Ni3Sn4上時,非但未能產 生屏蔽作用,反有加速Ni3Sn4生長的效果,同時鎳層的消 耗速率亦會增加。The effect of the recording layer is also started in this study. Welding work of tin = :: ίΛ, in which the recording layer is formed on the copper layer, and the D #terminal m Γ recording layer is shown in Figure 4C, of which Figure 4C: After about 2000 hours of soldering of Ni-Cu lead and nickel / copper joints, the metallographic diagram of the temple at 160 ° C. Compared to Fig. 4A, since the contact does not contain a gold layer in Fig. 仏, it is natural that this solder joint will not have (eight small Ni) Sn4 generated. At this time on the interface, only a single Νί3§η4, ^ was found. It is worth noting that the thickness of the interface Ni3Sn4 is only about 9 microns, and this thickness is significantly thinner than the thickness of the interface Ni3Sn4 in FIG. 4A. This result means that when the interface (Au, Ni) Sn4 covers the interface Ni3Sn4, instead of failing to produce a shielding effect, it will have the effect of accelerating the growth of Ni3Sn4, and the consumption rate of the nickel layer will also increase.
第11頁 540276 五、發明說明(9) 由第4A圖、第4B圖及第4C圖可清楚看到,當界面生 成(Cu,Au,Ni )6Sn5時,鎳層的消耗速率最慢。此係因 (Cu,ju’ Ni)6Sn5中所含鎳的濃度遠低於Ni3Sn4中所含 錄的濃度,同時(Cu,Au,Ni)6Sn5生長速率又較Ni3Sn4 上Γ兩項因素’故造成(Cu,Au,Ni)6Sn5所消耗 的鎳最j ,如第4C圖所示,鎳層厚度還留有71微米。相 反的,當(Au,Ni)Sn4覆蓋於界面時,其 卻反有加快的作用,如第“圖所二 以成鎳^層厚度所剩最少(1 · 7微米)。 第5圖係繪示是熱處理時間對Ni 3 6Sn5生長厚度作圓的钍婁 甘忐古U, Nl) 名曰作圖的果,其中直線5l〇表示錫鉛合金之 、干”、、 “鎳/鋼接點上Ni3Sn4的生長速率·亩蠄主 錫鉛合金之銲駐产力自土贫皮手,直線520表示 530表示含有Γ 的生長速率;直線 接點上(Cu L : R U二錯銅合金之銲點在^ 固態熱處理時,,(/ n 長速率。由第5圖可得知在 慢。 & (CU,AU,Nl)6Sn5的生長速率比Ni3Sn4為 大,而m述λ實/證明’銅對錫錯鲜接系統影響極 =之鎳層之間所產生的反應:降::擇銲點與接 消耗速率。 风物’以降低接點之鎳層的 錫銀銅系列错斗 彳鲜枓與含鎳層之接點反應 ^ ^明下階段則將進一 ^ ^时銅浪度對錫銀銅銲 540276 五 L、發明說明(10) 系統的影響’其中錫銀銅銲點係形成在一接點上,而在本 貫施例中’接點比如是由鋼層、錄層及金層所構成,其中 鎳層係位在銅層上’而金層係位在鎳層上,銲點係形成在 金層上’其結構如第2圖所示,在此便不再贅述。如第6A 圖、第6B圖及第6C圖所示,其中第6人圖係繪示以―3 5Ag (w^/Q)之銲點與接點銲接約2分鐘後的金相圖,第6β圖係 繪不Sn-4Ag-0. 5Cu (wt· %)之銲點與接點銲接約2 ^ 相圖,第 6C 圖係繪示811一3.5Ag^75(:u (wt ;點銲接f/鐘後的金相圖。由第6A圖、第6B圖:第6C、 圖可知,Ik者銅濃度的不同會使界面出現不同 物。當加入銅於銲點中的濃 弋的生成 間之界面生成物❿由原H二锡銀銅銲點與接點 6Α圖所示),逐漸轉變為( 連,之Ni3Sn4層(如第 的濃度更高時,則界面生点f = 。、若加人銅於銲點中Page 11 540276 V. Description of the invention (9) It can be clearly seen from Figures 4A, 4B and 4C that when the interface generates (Cu, Au, Ni) 6Sn5, the consumption rate of the nickel layer is the slowest. This is due to the fact that the concentration of nickel in (Cu, ju 'Ni) 6Sn5 is much lower than the concentration contained in Ni3Sn4, and that the growth rate of (Cu, Au, Ni) 6Sn5 is higher than that of Γ on Ni3Sn4. (Cu, Au, Ni) 6Sn5 consumes the most nickel. As shown in FIG. 4C, the thickness of the nickel layer is 71 micrometers. In contrast, when (Au, Ni) Sn4 covers the interface, it has an accelerating effect, as shown in Figure 2, where the thickness of the nickel layer is the smallest (1.7 microns). Figure 5 is a drawing Shown is the result of the heat treatment time rounding the growth thickness of Ni 3 6Sn5. U, Nl) is the result of the famous mapping, where the line 510 indicates the tin-lead alloy, dry, and nickel-steel contacts. The growth rate of Ni3Sn4 · The soldering capacity of the main tin-lead alloy is from the poor soil, the straight line 520 indicates that 530 indicates the growth rate containing Γ; on the straight contact (Cu L: RU Erco copper alloy solder joint is at ^ During solid-state heat treatment, (/ n long rate. It can be seen from Figure 5 that it is slow. &Amp; (CU, AU, Nl) 6Sn5 has a higher growth rate than Ni3Sn4, and the above-mentioned λ is true / proven 'copper to tin The reaction between the nickel layer and the nickel layer of the wrong connection system: drop :: select the welding point and the rate of consumption of the joint. The object of the tin-silver-copper series of the counterattack to reduce the nickel layer of the contact: fresh and nickel The layer's contact response ^ ^ The next stage will be further ^ ^ At the time of the copper wave on the tin-silver brazing 540276 five L, description of the invention (10) system ' The tin-silver-copper solder joint is formed on a contact. In the present embodiment, the contact is composed of a steel layer, a recording layer, and a gold layer, where the nickel layer is located on the copper layer. The layer is located on the nickel layer, and the solder joints are formed on the gold layer. Its structure is shown in Figure 2 and will not be repeated here. As shown in Figures 6A, 6B, and 6C, where The 6-person diagram is a metallographic diagram of ―3 5Ag (w ^ / Q) solder joint and contact after about 2 minutes of welding. The 6β diagram is not Sn-4Ag-0. 5Cu (wt ·%) The phase diagram of the solder joint and the joint is about 2 ^, and the 6C diagram is a metallographic diagram of 811-3.5Ag ^ 75 (: u (wt; spot welding f / minute). From Figures 6A and 6B : In Figure 6C, it can be seen that the difference in copper concentration between Ik and the interface will result in different objects. When copper is added to the solder joint, the interface products between the copper and copper joints will be formed from the original H ditin-silver-copper solder joints and contacts. As shown in Figure 6A), it gradually changes to (continuously, the Ni3Sn4 layer (if the concentration is higher, the interface origin point f =), if copper is added to the solder joint
Ni)6Sn5層(如第6C圖所-、:轉變為一連續之(Cu,Au, 種不同含量的銀〇卩不。此外,本研究亦嘗試加入各 影響,結果發現銀對界面反應 對界面反應的 說,錫銀銅銲料與含鎳 =㈢貝不大。換句話 之濃度變化而影響。、.、θ 、界面反應,最主要是受銅 值得釐清的是,雖-^ 響,但錫銀銅銲接系% 1 …同樣受銅濃度變化的影 卻稍細。例如當锡 妾系統受銅影 〇·5 wU之鋼時’在?心〜〇^ 銲^同樣μNi) 6Sn5 layer (as shown in Fig. 6C-: is transformed into a continuous (Cu, Au, silver with different content). In addition, this study also tried to add various effects, and found that silver reacted on the interface to the interface. In terms of reaction, tin-silver-copper solder is not so much as containing nickel = ㈢ shell. In other words, the concentration change is affected. .., θ, interface reactions are mainly affected by copper. It is worth clarifying that although-^, but The tin-silver-copper welding system% 1… is also slightly affected by the change in copper concentration. For example, when the tin alloy system is affected by the copper effect of 0.5 wU steel, it is' in the heart ~ 〇 ^ Welding the same μ
9468twf.ptd 第13頁 炙鮮點界面是生成單一 540276 五、發明說明(11) 之(Cu,Au,Ni)6Sn5 層(如第 2C 圖)。然而在 SnAg-0.5Cu 之 銲點界面,卻是長出(Ni,Cu)3Sn4與(Cu,Au,Ni)6Sn5兩 種化合物(如第6B圖)。 請參照第7A圖、第7B圖及第7C圖,其中第7A圖係繪 示Sn-3. 5Ag (wt· %)之銲點與接點銲接約30〇小時後且維持 在180〇C下的金相圖,第7B圖係繪示Sn-4Ag-0.5Cu (wt.%) 之銲點與接點銲接約3 〇 〇小時後且維持在丨8 〇〇c下的金相 圖,第7C圖係繪示Sn-3.5Ag-0.75Cu (wt·%)之銲點與接點 銲接約300小時後且維持在18〇〇(:下的金相圖。由第7A圖可 知,銲點不含銅時,則界面將有Ni3Sn4與(Au,Ni)Sn4兩 種化合物生成。由第7B圖可知,若錫銀銅銲點之銅濃度是 〇.5wt·% 時,則界面將生成(Ni,Cu)3Sn4 與(Cu,Au,Ni) 6SnJ兩種化a物’其中與錫錯銅銲點(如第圖所示)相似 的是’加入銅之銲严與接點間的界面同樣不會有(a,旧) l ,缺’而t盘即韻Λ不加人銅於銲點中可抑制(Au,Ni)Sn4的 pts .9468twf.ptd Page 13 The hot spot interface is to generate a single 540276 V. Invention description (11) of the (Cu, Au, Ni) 6Sn5 layer (as shown in Figure 2C). However, at the solder joint interface of SnAg-0.5Cu, two compounds ((Ni, Cu) 3Sn4 and (Cu, Au, Ni) 6Sn5) grow (see Fig. 6B). Please refer to Figures 7A, 7B, and 7C, where Figure 7A shows the solder joints and contacts of Sn-3. 5Ag (wt ·%) after about 30 hours and maintained at 180 ° C Fig. 7B shows a metallographic diagram of Sn-4Ag-0.5Cu (wt.%) Solder joints and contacts after 3,000 hours and maintained at 丨 800c. 7C is a metallographic diagram showing the solder joints and contacts of Sn-3.5Ag-0.75Cu (wt ·%) after being soldered for about 300 hours and maintained at 1800 (:). As can be seen from Fig. 7A, the solder joints When copper is not included, Ni3Sn4 and (Au, Ni) Sn4 compounds will be formed at the interface. As shown in Figure 7B, if the copper concentration of the tin-silver-copper solder joint is 0.5wt ·%, the interface will be generated ( Ni, Cu) 3Sn4 and (Cu, Au, Ni) 6SnJ are two kinds of a substance ', which is similar to the tin-copper solder joint (as shown in the figure) is' the interface between the soldering tightness of copper and the contact is also not the same There will be (a, old) l, lacking ', and the t disk, ie rhyme Λ, does not add copper to the solder joint, which can suppress (Au, Ni) Sn4 pts.
PbSn一0· 5Cu(wt· %)銲點 * &田L 又PbSn-0 · 5Cu (wt ·%) solder joint * & Tian L again
Au,Ni)6Sn5 (如第仙圖所?面僅生成單一之(CU, 點間的界面卻是生成(Ni不,但疋SnAg-0. 5Cu銲點與接 種化合物(如第7B圖所么C')3Sn4與(Cu,Au,Ni)6Sn^ 至0.75 wU時,則與接。右錫銀銅銲點之銅含量再提高 Cu)3Sn4與(Cu,Au,Ni)=的界面上仍是生成⑴, 然而在比較第7B圖盘第7f ^兩化合物(如第7C圖所示)。Au, Ni) 6Sn5 (As shown in the figure of the fairy, only a single (CU, but the interface between the points is generated (Ni is not, but 疋 SnAg-0. 5Cu solder joints and seed compounds (as shown in Figure 7B C ') 3Sn4 and (Cu, Au, Ni) 6Sn ^ to 0.75 wU are connected. The copper content of the right tin-silver-copper solder joint is further increased by Cu) 3Sn4 and (Cu, Au, Ni) =. It is generated, but the 7f ^ 2 compounds in the 7B panel are compared (as shown in FIG. 7C).
Sn^Ag-O^CuCwt.o;;,!! )知點中,(Ni,CU)3Sn4厚度較厚,而Sn ^ Ag-O ^ CuCwt.o ;;, !!) In the knowledge point, (Ni, CU) 3Sn4 is thicker, and
9468twf.ptd 第14頁 540276 五、發明說明(12) 剩餘鎳層的厚度較薄(如第7B圖所示);然而在9468twf.ptd Page 14 540276 V. Description of the invention (12) The thickness of the remaining nickel layer is thin (as shown in Figure 7B); however, in
Sn-3.5Ag-〇.75Cu (wt·%)銲點中,(Ni,Cu)3Sn4 溥,而剩餘鎳層的厚度較厚(如第7C圖所示)。由二=, 銅二有抑制(Au,Ni)Sn4生成的效果外,更有減緩⑻口’ u) Sn4生成的功效。故當銲點之銅濃度提高時,可 =制Ni3Sn4或(Ni,Cu)3Sn4的生長,並且可以大‘ 接點中鎳層的消耗速率。 田k級 接點上然而本發:月义可以應用在各種不同形式之含有錦層的 的鈀/鋅’/ΐί疋ί述之金/鎳/銅接點、鎳/銅接點或其他 或飢等 4 ’並且還可以將錄層中添加璘、録、銅 銲點/4/卜> π在本發明中並非僅限於利用錫銀銅為材料的 It:;材料的鮮點,亦可以利用錫銅為材料二 耗4 度的控制’而減緩接點中鎳層的消 到5 %之^。 ,β點中,銅的濃度比如是介於0· 05% 述。第再一者種方添Λ鋼於銲Β點中的方法有許多種,如下所 銲點時,就直接2疋在以電鍍或網板印刷的方式形成 ^ 就罝接形成含有銅的銲點。 ^ ^ ΛΓΛνν w ^ ^ ^ ^ ^ ^ ^ ^ 點820之一端侈凊拉土板間的銲點結構剖面示意圖。其中銲 端係連接A板831片_之接點810,而銲點82〇之另-運接基板830之接點84G。晶片81q的接點係含有—錄In the Sn-3.5Ag-.75Cu (wt ·%) solder joint, (Ni, Cu) 3Sn4 溥, and the thickness of the remaining nickel layer is thicker (as shown in FIG. 7C). From the two =, copper two has the effect of suppressing the production of (Au, Ni) Sn4, and it also has the effect of slowing the production of ’u ′ Sn4. Therefore, when the copper concentration of the solder joint is increased, the growth of Ni3Sn4 or (Ni, Cu) 3Sn4 can be increased, and the consumption rate of the nickel layer in the contact can be increased. However, this issue: Yueyi can be applied to various forms of palladium / zinc '/ 锦 ίΐί gold / nickel / copper contacts, nickel / copper contacts, or other You can also add 并且, 、, and copper solder joints to the recording layer / 4 / bu> π in the present invention is not limited to the use of tin-silver-copper as the material It :; the freshness of the material can also be The use of tin-copper as a material consumes 4 degrees of control, and the nickel layer in the contact is slowed down to 5% ^. In the β point, the copper concentration is, for example, between 0.05%. There are many ways to add Λ steel to the welding point B. For the following welding points, they are directly formed by electroplating or screen printing. ^ Then, a welding point containing copper is formed. . ^ ^ ΛΓΛνν w ^ ^ ^ ^ ^ ^ ^ ^ ^ Schematic cross-sectional view of the structure of the solder joint between the slabs at one end of point 820. Among them, the soldering end is connected to the contact 810 of the 831 sheet of the A board, and the soldering point 820 is connected to the contact 84G of the substrate 830. The contacts of chip 81q contain-record
9468twf.pld 第15頁 540276 五、發明說明(13) 1,其中晶片8 0 G之接點81 〇結構可以是類似第2圖所示的 結構,或是類似前述各種含有鎳層的接點。而基板83〇之 接點840比如是由一銅層所構成,如此銲點82〇在與基板 830之接點840接合後,基板83〇之接點84〇中的銅便可以擴 散到鋒點820中,以增加銲點82〇中銅的濃度。並且可以藉 由拉近晶片8 0 0之接點8 1 〇與基板8 3 〇之接點8 4 0間的距離, 使得由基板8 3 0之接點8 4 0擴散到銲點8 2 〇中的銅,可以短 時間内到達晶片8 0 0之接點8 1 〇處,而影響晶片8 〇 〇之接點 8 1 0與銲點8 2 0間界面的性質。此外,還可以藉由減少銲點 820的質量,使得基板83〇之接點84〇僅需擴散少量的銅到 焊點820中,便可以大幅地增加銅離子在銲點82〇中的濃 度’而影響晶片8 0 0之接點8 1 0與銲點8 2 0間界面的性質。 另外,上述增加銅濃度的方式,亦可以應用於位在基板與 印刷電路板間的銲點中。 —第三種方式,請參照第9圖,其繪示依照本發明一較 仫貝知例之接點及録點的剖面示意圖。在銲點9 2 〇形成到 晶片900之接點910上前,還可以先預鍍上一銅層99〇到晶 片9 0 0之接點91 〇上。如此在輝點9 2 〇形成到銅層9 9 〇上之 後,銅層990中的銅原子會擴散到銲點92〇中,以增加銲點 920中銅的含量。其中晶片9〇〇之接點91〇比如是由銅層 91 2、鎳層9 1 4及金層9 1 6所構成,其詳細結構及製作方法 如第2圖所示,在此便不再贅述。然而亦可以在基板之接 點上形成一銅層,以增加基板之接點上的銲點中銅的濃 度’或者’亦可以在印刷電路板之接點上形成一銅層,以9468twf.pld Page 15 540276 V. Description of the invention (13) 1, wherein the contact point 81 of the chip 80G can be similar to the structure shown in FIG. 2 or similar to the foregoing various contacts containing a nickel layer. The contact 840 of the substrate 83 is composed of a copper layer, so that after the solder joint 82 is joined with the contact 840 of the substrate 830, the copper in the contact 84 of the substrate 83 can diffuse to the front point. 820 to increase the copper concentration in solder joint 820. In addition, the distance between the contact point 8 1 0 of the wafer 8 0 and the contact point 8 40 of the substrate 8 3 0 can be reduced, so that the contact point 8 4 0 of the substrate 8 3 0 can be diffused to the solder point 8 2 〇. The copper in the copper can reach the contact point 810 of the wafer 8000 in a short time, and affect the properties of the interface between the contact point 810 of the wafer 8000 and the solder joint 820. In addition, by reducing the quality of the solder joint 820, only a small amount of copper needs to be diffused into the solder joint 820 at the junction 84 of the substrate 83, and the concentration of copper ions in the solder joint 82 can be greatly increased. ' However, it affects the properties of the interface between the contact 8 1 0 and the solder 8 2 0 of the wafer 8 0. In addition, the above-mentioned method for increasing the copper concentration can also be applied to a solder joint located between a substrate and a printed circuit board. -The third method, please refer to FIG. 9, which shows a schematic cross-sectional view of contacts and recording points according to a comparative example of the present invention. Before the solder joint 9 200 is formed on the contact 910 of the wafer 900, a copper layer 9900 can be pre-plated on the wafer 9 900 on the contact 91. After the bright spot 920 is formed on the copper layer 990 in this way, the copper atoms in the copper layer 990 will diffuse into the solder joint 920 to increase the copper content in the solder joint 920. The contact 91 of the wafer 900 is composed of a copper layer 912, a nickel layer 914, and a gold layer 916. The detailed structure and manufacturing method are shown in FIG. 2 and will not be repeated here. To repeat. However, it is also possible to form a copper layer on the contacts of the substrate to increase the concentration of copper in the solder joints on the contacts of the substrate, or to form a copper layer on the contacts of the printed circuit board.
第16頁 540276 五、發明說明(14) 增加印刷電路板之接點上 施例中,銅層係預鑛在接點’ 、,s 、濃度。在上述的實 上,然而本發明並不侷= 亦即形成在金層 鍍在接點内,比如銅層传开: = ,亦可以將銅層預 至/銅/鎳/銅之接點結構。 ’、 夕成 弟四種方式,可〇 + i 接點與銲點之界面間銅的含接量。中的錦層添加銅,以增加 含的銅濃产斤,述來:禮’V月之銲點結構,係藉由控制銲點所 A J, [,/ ^ ^ ^ ,點與接點之鎳層之間所產生的反瘅 =,以降低接點之鎳層的消耗速率 :的情,下’則可以選擇生成(Cu,Au, 金 AU,N⑽以與⑻,Cu)3 物;若接點在不含有金層的情況下’則可以選i;; 雖然本發明已以一較佳實施例揭露如上 =限定本發明,任何熟習此技藝者, 本、並非 内夕可作些許之更動與潤飾,因此ί:;:: /、濩辄圍虽視後附之申請專利範圍所界定者為準。Page 16 540276 V. Description of the invention (14) Adding contacts to the printed circuit board In the embodiment, the copper layer is pre-mineralized at the contacts ′ ,, s, and concentration. In the above-mentioned reality, however, the present invention is not localized = that is, formed in the gold layer plated in the contact, for example, the copper layer is spread: =, the copper layer can also be preset to the copper / nickel / copper contact structure . ′, Xi Chengdi four ways, can 〇 + i contact point and solder joint interface copper content. Copper is added in the brocade layer to increase the copper concentration. The description is: Li'V's joint structure is controlled by controlling the joint AJ, [, / ^ ^ ^, nickel of points and contacts. The reaction between the layers = to reduce the consumption rate of the nickel layer of the contact: In the case of the following, you can choose to generate (Cu, Au, gold AU, N⑽ and ⑽, Cu) 3; if connected If you do not have a gold layer, then you can choose i; Although the present invention has been disclosed as above with a preferred embodiment = Limiting the present invention, anyone familiar with this skill can make some changes on this and not on the eve. Retouching, so ί:; :: /, 濩 辄 虽 Although the scope of the attached patent application is defined as the standard.
第17頁 540276Page 540 276
圖 第1圖繪示習知電子 元件之接點及銲點的剖面示意 施例之接點及銲點的 第2圖繪示依照本發明一較佳魯 剖面示意圖。 第2 A圖纷不錫錯合金之错LA. 金相圖。 王之鲜點與接點銲接約2分鐘後的 第2B圖繪示含有O.lwt·% 加人入 44 _ U之錫叙1銅合金之辉點盥 接4銲接約2分鐘後的金相圖。 ”、〃 第2C圖繪示含有〇.5wt·% Cii$緦纽細人人 U之錫金σ銅合金之辉點斑 接“、、έ知接約2分鐘後的金相圖。 〃 第2D圖繪示含有I5wt·% Cu:?4l»私細人人 接點銲接約2分鐘後的金相圖。錫氣銅^金之銲點與 第3A圖、喻示錫乱i合金之鲜點與接 維持在225〇C下的金相圖。 设η』傻且 第3Β圖繪示含有Uwt.% CU之錫鉛銅合金之 接點銲接約4小時後且維持在225。^下的金相圖全之I占與 弟4 A圖繪示錫錯合金之録點叙拉 心奸點與接點銲接約2000小時 後且維持在1 6 0 〇 C下的金相圖。 第4B圖繪示含有0.5wt.% Cu之錫鉛銅合金之銲點與 接點銲接約2000小時後且維持在16〇〇(:下的金相圖。·· /、 第4C圖繪示錫鉛合金之銲點與鎳/銅接點銲接約2〇〇〇 小4後且維持在160〇C下的金相圖。 第5圖係繪示是熱處理時間對Ni3Sn4盥 (CU〇.7〇Au0.05Ni0.25)6Sn5生長厚度作圖/的結果。FIG. 1 is a schematic cross-sectional view of a contact and a solder joint of a conventional electronic component. FIG. 2 is a schematic cross-sectional view of a preferred contact according to the present invention. Figure 2 A. Miscellaneous tin alloys. LA. Metallographic diagram. Figure 2B of the welding of Wang Zhixian and the contact after about 2 minutes shows the metallographic phase containing 0.1% wt ·% of 44_ U tin tin 1 copper alloy bright spot welding 4 after about 2 minutes of welding Illustration. ", Fig. 2C shows the metallographic image of the tin-gold σ copper alloy containing 0.5wt ·% Cii $ 缌 人人 U, the tin-gold σ copper alloy, and" ". 〃 Figure 2D shows a metallurgical picture containing about 5 minutes of I5wt ·% Cu:? 4l »personal contact after welding. The solder joints of tin gas copper and gold are shown in Fig. 3A, and the metallographic diagrams of the fresh spots and joints of tin disorder i alloy are maintained at 2250C. Let η ″ be silly and FIG. 3B shows the soldering of the tin-lead-copper alloy containing Uwt.% CU for about 4 hours and the solder joint is maintained at 225. The following metallographic map I of Zhan and the younger brother 4 A shows the metallographic map of the tin point of Syrah alloy after the welding of the traitor and the contact is about 2000 hours and maintained at 16 00 C. Fig. 4B shows a metallographic diagram of a tin-lead-copper alloy containing 0.5 wt.% Cu after soldering to a joint for about 2,000 hours and maintained at 1600 (:). The metallographic diagram of the tin-lead alloy solder joint with the nickel / copper contact after about 2000 small 4 and maintained at 160 ° C. Figure 5 shows the heat treatment time for Ni3Sn4 (CU.7 〇Au0.05Ni0.25) 6Sn5 growth thickness mapping results.
9468twf.ptd 第18頁 540276 圖式簡單說明 第6A圖繪示Sn-3· 5Ag (wt· %)之銲點與接點銲接約2 分鐘後的金相圖。 第6B圖繪示Sn-4Ag-0.5Cu (wt·%)之銲點與接點鲜接 約2分鐘後的金相圖。 第6C圖繪示Sn - 3.5Ag-0.75Cu (wt·%)之銲點與接點 銲接約2分鐘後的金相圖。 第7A圖繪示Sn-3.5Ag (wt·%)之銲點與接點銲接約 300小時後且維持在1 8 0oC下的金相圖。 第7B圖繪示Sn-4Ag - 0.5Cu (wt·%)之銲點與接點銲接 約3 0 0小時後且維持在1 8 0〇C下的金相圖。 第7C圖繪示Sn-3.5Ag-0.75Cu (wt.%)之銲點與接點 銲接約3 0 0小時後且維持在1 8 0oC下的金相圖。 第8圖繪示依照本發明一較佳實施例之晶片與基板間 的銲點結構剖面示意圖。 第9圖繪示依照本發明一較佳實施例之接點及銲點的 剖面示意圖。9468twf.ptd Page 18 540276 Brief description of the drawing Figure 6A shows the metallographic picture of the soldering point of Sn-3 · 5Ag (wt ·%) after about 2 minutes. Fig. 6B shows a metallographic image of Sn-4Ag-0.5Cu (wt ·%) solder joint and contact freshly after about 2 minutes. Figure 6C shows a metallographic diagram of the solder joints and contacts of Sn-3.5Ag-0.75Cu (wt ·%) after about 2 minutes. Fig. 7A shows a metallographic diagram of Sn-3.5Ag (wt ·%) solder joints and contacts after being soldered for about 300 hours and maintained at 180 ° C. Figure 7B shows a metallographic diagram of Sn-4Ag-0.5Cu (wt ·%) solder joints and solder joints after about 300 hours and maintained at 1800 ° C. Figure 7C shows a metallographic diagram of the solder joints and contacts of Sn-3.5Ag-0.75Cu (wt.%) After being soldered for about 300 hours and maintained at 180 ° C. FIG. 8 is a schematic cross-sectional view of a solder joint structure between a wafer and a substrate according to a preferred embodiment of the present invention. FIG. 9 is a schematic cross-sectional view of a contact and a solder joint according to a preferred embodiment of the present invention.
9468twt.ptd 第19頁9468twt.ptd Page 19
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TW91117796A TW540276B (en) | 2001-12-28 | 2002-05-21 | Solder point with low speed of consuming nickel |
US10/414,043 US20030219623A1 (en) | 2002-05-21 | 2003-04-16 | Solder joints with low consumption rate of nickel layer |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI394632B (en) * | 2009-07-13 | 2013-05-01 | Lsi Corp | Improvement of solder interconnect by addition of copper |
US20160049564A1 (en) | 2014-08-13 | 2016-02-18 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
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2002
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI394632B (en) * | 2009-07-13 | 2013-05-01 | Lsi Corp | Improvement of solder interconnect by addition of copper |
US20160049564A1 (en) | 2014-08-13 | 2016-02-18 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
CN105374776A (en) * | 2014-08-13 | 2016-03-02 | 三星电子株式会社 | Semiconductor chip, semiconductor device, and method of manufacturing the same |
US10249604B2 (en) | 2014-08-13 | 2019-04-02 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
CN112071764A (en) * | 2014-08-13 | 2020-12-11 | 三星电子株式会社 | Semiconductor chip, semiconductor device and method for manufacturing the same |
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