JP2018206828A5 - - Google Patents
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- JP2018206828A5 JP2018206828A5 JP2017107499A JP2017107499A JP2018206828A5 JP 2018206828 A5 JP2018206828 A5 JP 2018206828A5 JP 2017107499 A JP2017107499 A JP 2017107499A JP 2017107499 A JP2017107499 A JP 2017107499A JP 2018206828 A5 JP2018206828 A5 JP 2018206828A5
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- region
- insulator
- oxide
- compound layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004020 conductor Substances 0.000 claims 19
- 239000012212 insulator Substances 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 11
- 150000001875 compounds Chemical class 0.000 claims 10
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017107499A JP2018206828A (ja) | 2017-05-31 | 2017-05-31 | 半導体装置、および半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017107499A JP2018206828A (ja) | 2017-05-31 | 2017-05-31 | 半導体装置、および半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018206828A JP2018206828A (ja) | 2018-12-27 |
| JP2018206828A5 true JP2018206828A5 (enExample) | 2020-07-16 |
Family
ID=64958137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017107499A Withdrawn JP2018206828A (ja) | 2017-05-31 | 2017-05-31 | 半導体装置、および半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2018206828A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102744478B1 (ko) | 2019-02-28 | 2024-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| WO2021038363A1 (ja) * | 2019-08-29 | 2021-03-04 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
| TW202129877A (zh) * | 2019-08-30 | 2021-08-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| JP2022143580A (ja) * | 2021-03-17 | 2022-10-03 | キオクシア株式会社 | 半導体装置及び半導体記憶装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100858088B1 (ko) * | 2007-02-28 | 2008-09-10 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
| JP5708910B2 (ja) * | 2010-03-30 | 2015-04-30 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
| CN118588742A (zh) * | 2014-02-21 | 2024-09-03 | 株式会社半导体能源研究所 | 半导体膜、晶体管、半导体装置、显示装置以及电子设备 |
| TWI672804B (zh) * | 2014-05-23 | 2019-09-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| WO2016016776A1 (ja) * | 2014-07-31 | 2016-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の評価方法 |
| JP6683503B2 (ja) * | 2015-03-03 | 2020-04-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6851166B2 (ja) * | 2015-10-12 | 2021-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2017
- 2017-05-31 JP JP2017107499A patent/JP2018206828A/ja not_active Withdrawn
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