JP5949516B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5949516B2
JP5949516B2 JP2012272987A JP2012272987A JP5949516B2 JP 5949516 B2 JP5949516 B2 JP 5949516B2 JP 2012272987 A JP2012272987 A JP 2012272987A JP 2012272987 A JP2012272987 A JP 2012272987A JP 5949516 B2 JP5949516 B2 JP 5949516B2
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Japan
Prior art keywords
layer
electrode layer
semiconductor device
manufacturing
contact formation
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JP2012272987A
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English (en)
Japanese (ja)
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JP2014120542A (ja
JP2014120542A5 (enExample
Inventor
岡　徹
徹 岡
田中　成明
成明 田中
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2012272987A priority Critical patent/JP5949516B2/ja
Priority to US14/105,018 priority patent/US9123635B2/en
Publication of JP2014120542A publication Critical patent/JP2014120542A/ja
Publication of JP2014120542A5 publication Critical patent/JP2014120542A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012272987A 2012-12-14 2012-12-14 半導体装置の製造方法 Active JP5949516B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012272987A JP5949516B2 (ja) 2012-12-14 2012-12-14 半導体装置の製造方法
US14/105,018 US9123635B2 (en) 2012-12-14 2013-12-12 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012272987A JP5949516B2 (ja) 2012-12-14 2012-12-14 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014120542A JP2014120542A (ja) 2014-06-30
JP2014120542A5 JP2014120542A5 (enExample) 2015-02-05
JP5949516B2 true JP5949516B2 (ja) 2016-07-06

Family

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JP2012272987A Active JP5949516B2 (ja) 2012-12-14 2012-12-14 半導体装置の製造方法

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US (1) US9123635B2 (enExample)
JP (1) JP5949516B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6007769B2 (ja) * 2012-12-14 2016-10-12 豊田合成株式会社 半導体装置
JP6369366B2 (ja) * 2015-03-26 2018-08-08 豊田合成株式会社 半導体装置の製造方法
JP6631853B2 (ja) * 2015-09-25 2020-01-15 パナソニックＩｐマネジメント株式会社 半導体装置
JP6888224B2 (ja) * 2017-10-16 2021-06-16 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2783349B2 (ja) 1993-07-28 1998-08-06 日亜化学工業株式会社 ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法
JP3620926B2 (ja) * 1995-06-16 2005-02-16 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子
JP3625377B2 (ja) * 1998-05-25 2005-03-02 ローム株式会社 半導体発光素子
JP4003296B2 (ja) 1998-06-22 2007-11-07 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP4645753B2 (ja) 2003-02-06 2011-03-09 株式会社豊田中央研究所 Ｉｉｉ族窒化物半導体を有する半導体素子
JP4645034B2 (ja) 2003-02-06 2011-03-09 株式会社豊田中央研究所 Ｉｉｉ族窒化物半導体を有する半導体素子
JP2008053449A (ja) 2006-08-24 2008-03-06 Rohm Co Ltd 半導体装置およびその製造方法
JP2008205175A (ja) 2007-02-20 2008-09-04 Rohm Co Ltd 窒化物半導体素子の製造方法
JP4478175B2 (ja) 2007-06-26 2010-06-09 株式会社東芝 半導体装置
JP2009094427A (ja) * 2007-10-12 2009-04-30 Eudyna Devices Inc 発光素子の製造方法
JP2009117820A (ja) * 2007-10-16 2009-05-28 Rohm Co Ltd 窒化物半導体素子および窒化物半導体素子の製造方法
JP5390983B2 (ja) * 2008-08-08 2014-01-15 古河電気工業株式会社 電界効果トランジスタおよび電界効果トランジスタの製造方法
JP5325534B2 (ja) 2008-10-29 2013-10-23 株式会社東芝 窒化物半導体素子
JP2010205918A (ja) * 2009-03-03 2010-09-16 Sumitomo Electric Ind Ltd パワーデバイスおよびその製造方法
JP5453892B2 (ja) * 2009-04-15 2014-03-26 トヨタ自動車株式会社 窒化物半導体装置
JP5144585B2 (ja) * 2009-05-08 2013-02-13 住友電気工業株式会社 半導体装置およびその製造方法
JP4737471B2 (ja) 2009-10-08 2011-08-03 住友電気工業株式会社 半導体装置およびその製造方法

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Publication number Publication date
JP2014120542A (ja) 2014-06-30
US9123635B2 (en) 2015-09-01
US20140167062A1 (en) 2014-06-19

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