JP2008529274A5 - - Google Patents

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Publication number
JP2008529274A5
JP2008529274A5 JP2007552131A JP2007552131A JP2008529274A5 JP 2008529274 A5 JP2008529274 A5 JP 2008529274A5 JP 2007552131 A JP2007552131 A JP 2007552131A JP 2007552131 A JP2007552131 A JP 2007552131A JP 2008529274 A5 JP2008529274 A5 JP 2008529274A5
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JP
Japan
Prior art keywords
forming
region
barrier layer
metal oxide
resistant barrier
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JP2007552131A
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English (en)
Japanese (ja)
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JP4685882B2 (ja
JP2008529274A (ja
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Priority claimed from US11/043,337 external-priority patent/US7109079B2/en
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Publication of JP2008529274A publication Critical patent/JP2008529274A/ja
Publication of JP2008529274A5 publication Critical patent/JP2008529274A5/ja
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Publication of JP4685882B2 publication Critical patent/JP4685882B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007552131A 2005-01-26 2005-12-16 半導体装置及びその製造方法 Expired - Fee Related JP4685882B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/043,337 US7109079B2 (en) 2005-01-26 2005-01-26 Metal gate transistor CMOS process and method for making
PCT/US2005/045727 WO2006081003A2 (en) 2005-01-26 2005-12-16 Metal gate transistor for cmos process and method for making

Publications (3)

Publication Number Publication Date
JP2008529274A JP2008529274A (ja) 2008-07-31
JP2008529274A5 true JP2008529274A5 (enExample) 2009-01-15
JP4685882B2 JP4685882B2 (ja) 2011-05-18

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JP2007552131A Expired - Fee Related JP4685882B2 (ja) 2005-01-26 2005-12-16 半導体装置及びその製造方法

Country Status (6)

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US (1) US7109079B2 (enExample)
JP (1) JP4685882B2 (enExample)
KR (1) KR101185685B1 (enExample)
CN (1) CN100483687C (enExample)
TW (1) TWI385733B (enExample)
WO (1) WO2006081003A2 (enExample)

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