JP4685882B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4685882B2
JP4685882B2 JP2007552131A JP2007552131A JP4685882B2 JP 4685882 B2 JP4685882 B2 JP 4685882B2 JP 2007552131 A JP2007552131 A JP 2007552131A JP 2007552131 A JP2007552131 A JP 2007552131A JP 4685882 B2 JP4685882 B2 JP 4685882B2
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layer
region
gate
metal oxide
forming
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Expired - Fee Related
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JP2007552131A
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Japanese (ja)
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JP2008529274A5 (enExample
JP2008529274A (ja
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ザ サード、ジェームス ケイ． シェフェール
オー． アデテュテュ、オルブンミ
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0174—Manufacturing their gate conductors the gate conductors being silicided
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0184—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2007552131A 2005-01-26 2005-12-16 半導体装置及びその製造方法 Expired - Fee Related JP4685882B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/043,337 US7109079B2 (en) 2005-01-26 2005-01-26 Metal gate transistor CMOS process and method for making
PCT/US2005/045727 WO2006081003A2 (en) 2005-01-26 2005-12-16 Metal gate transistor for cmos process and method for making

Publications (3)

Publication Number Publication Date
JP2008529274A JP2008529274A (ja) 2008-07-31
JP2008529274A5 JP2008529274A5 (enExample) 2009-01-15
JP4685882B2 true JP4685882B2 (ja) 2011-05-18

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JP2007552131A Expired - Fee Related JP4685882B2 (ja) 2005-01-26 2005-12-16 半導体装置及びその製造方法

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Country Link
US (1) US7109079B2 (enExample)
JP (1) JP4685882B2 (enExample)
KR (1) KR101185685B1 (enExample)
CN (1) CN100483687C (enExample)
TW (1) TWI385733B (enExample)
WO (1) WO2006081003A2 (enExample)

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KR20070094807A (ko) 2007-09-21
KR101185685B1 (ko) 2012-09-24
TWI385733B (zh) 2013-02-11
TW200636875A (en) 2006-10-16
CN101091244A (zh) 2007-12-19
JP2008529274A (ja) 2008-07-31
WO2006081003A2 (en) 2006-08-03
CN100483687C (zh) 2009-04-29
US20060166424A1 (en) 2006-07-27
WO2006081003A3 (en) 2007-04-26
US7109079B2 (en) 2006-09-19

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