JP2008529274A - Cmosプロセス用金属ゲート・トランジスタ及びその製造方法 - Google Patents
Cmosプロセス用金属ゲート・トランジスタ及びその製造方法 Download PDFInfo
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823864—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
Abstract
Description
簡単さ及び明確さのために図面の要素が例示されており、必ずしも実寸に基づき図示されていないことは、当業者にとって明らかである。例えば、図中の幾つかの要素の寸法は、本発明の実施形態の理解を容易にするため、他の要素と比較して誇張されている。
Claims (20)
- 半導体装置を形成する方法であって、
第一領域を有する半導体基板を提供するステップと、
前記第一領域上にゲート誘電体を形成するステップと、
前記ゲート誘電体上に導電性金属酸化物を形成するステップと、
前記導電性金属酸化物上に耐酸化バリア層を形成するステップと、
前記耐酸化バリア層上にキャッピング層を形成するステップと
を備える方法。 - 請求項1記載の方法において、
前記第一領域はn型にドープされる方法。 - 請求項2記載の方法において、
前記導電性金属酸化物はPMOSゲート電極の少なくとも一部を形成する方法。 - 請求項2記載の方法において、
前記半導体基板は第二領域を有し、
前記第二領域はp型にドープされ、
前記半導体装置を形成する方法は、更に、前記耐酸化バリア層の上方と前記キャッピング層の下方とにNMOSゲート電極材料を形成するステップを備える方法。 - 請求項1記載の方法において、
NMOSゲート電極を形成するステップは、更に、TaC及びTaSiNからなる群より選択された材料を形成するステップを備える方法。 - 請求項1記載の方法において、
前記導電性金属酸化物を形成するステップは、更に、Ir,Mo,Ru,W,Os,Nb,Ti,V,Ni及びReからなる群より選択された元素を含む前記導電性金属酸化物を形成するステップを備える方法。 - 請求項6記載の方法において、
前記耐酸化バリア層を形成するステップは、更に、TiNを形成するステップを備える方法。 - 請求項1記載の方法において、
前記キャッピング層を形成するステップは、更に、ポリシリコン層を形成するステップを備える方法。 - 請求項1記載の方法において、
前記耐酸化バリア層を形成するステップは、前記半導体基板をアニーリングする前に行われる方法。 - 半導体装置を形成する方法であって、
第一領域及び第二領域を有する半導体基板を提供するステップであって、前記第一領域は前記第二領域と異なるドーパントを備えるステップと、
前記第一領域及び前記第二領域の上方にゲート誘電体を形成するステップと、
前記第一領域における前記ゲート誘電体上に導電性金属酸化物を形成するステップと、
前記第一領域における前記導電性金属酸化物上に耐酸化バリア層を形成するステップと、
前記第二領域における前記ゲート誘電体上に導電性材料を形成するステップと
を備える方法。 - 請求項10記載の方法は、更に
前記第一領域における前記耐酸化バリア層上にキャッピング層を形成し、前記第二領域において前記導電性材料を形成するステップを備える方法。 - 請求項11に記載の方法において、
前記キャッピング層を形成するステップは、更に、前記第一領域における耐酸化バリア層上にポリシリコン層を形成し、前記第二領域において前記導電性材料を形成するステップを備える方法。 - 請求項10記載の方法において、
前記第一領域はn型にドープされ、前記第二領域はp型にドープされる方法。 - 請求項10記載の方法において、
前記導電性金属酸化物はP−MOSゲート電極の少なくとも一部を形成し、前記導電性材料はN−MOSゲート電極の少なくとも一部を形成する方法。 - 請求項10記載の方法において、
前記導電性材料を形成するステップは、更に、TaC及びTaSiNからなる群より選択された材料を形成するステップを備える方法。 - 請求項10記載の方法において、
前記導電性金属酸化物を形成するステップは、更に、Ir,Mo,Ru,W,Os,Nb,Ti,V,Ni及びReからなる群より選択された元素を含む導電性金属酸化物を形成するステップからなる方法。 - 請求項10記載の方法において、
前記耐酸化バリア層を形成するステップは、更に、TiNを形成するステップを備える方法。 - 請求項10記載の方法において、
前記耐酸化バリア層を形成するステップは、前記半導体基板をアニーリングする前に行われる方法。 - 半導体装置であって、
第一領域を有する半導体基板と、
前記第一領域上にゲート誘電体と、
前記ゲート誘電体上に導電性金属酸化物と、
前記導電性金属酸化物上に耐酸化バリア層と、
前記耐酸化バリア層上にキャッピング層と
を備える半導体装置。 - 請求項19記載の半導体装置において、
前記導電性金属酸化物は、Ir,Mo,Ru,W,Os,Nb,Ti,V,Ni及びReからなる群より選択された元素を含み、前記耐酸化バリア層は、チタン及び窒素を含む半導体装置。
Applications Claiming Priority (2)
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US11/043,337 US7109079B2 (en) | 2005-01-26 | 2005-01-26 | Metal gate transistor CMOS process and method for making |
PCT/US2005/045727 WO2006081003A2 (en) | 2005-01-26 | 2005-12-16 | Metal gate transistor for cmos process and method for making |
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JP2008529274A true JP2008529274A (ja) | 2008-07-31 |
JP2008529274A5 JP2008529274A5 (ja) | 2009-01-15 |
JP4685882B2 JP4685882B2 (ja) | 2011-05-18 |
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JP2007552131A Expired - Fee Related JP4685882B2 (ja) | 2005-01-26 | 2005-12-16 | 半導体装置及びその製造方法 |
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US (1) | US7109079B2 (ja) |
JP (1) | JP4685882B2 (ja) |
KR (1) | KR101185685B1 (ja) |
CN (1) | CN100483687C (ja) |
TW (1) | TWI385733B (ja) |
WO (1) | WO2006081003A2 (ja) |
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Also Published As
Publication number | Publication date |
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TWI385733B (zh) | 2013-02-11 |
JP4685882B2 (ja) | 2011-05-18 |
TW200636875A (en) | 2006-10-16 |
KR101185685B1 (ko) | 2012-09-24 |
WO2006081003A2 (en) | 2006-08-03 |
CN101091244A (zh) | 2007-12-19 |
WO2006081003A3 (en) | 2007-04-26 |
US7109079B2 (en) | 2006-09-19 |
KR20070094807A (ko) | 2007-09-21 |
US20060166424A1 (en) | 2006-07-27 |
CN100483687C (zh) | 2009-04-29 |
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