JP2010537401A - 薄いsoiの集積化のためのmosトランジスタおよびその製造方法 - Google Patents
薄いsoiの集積化のためのmosトランジスタおよびその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 230000010354 integration Effects 0.000 title abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 239000012212 insulator Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 21
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- 238000002513 implantation Methods 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 230000001939 inductive effect Effects 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- -1 boron ions Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- WVEIBSXNFJMONP-UHFFFAOYSA-N [Ta].[K] Chemical compound [Ta].[K] WVEIBSXNFJMONP-UHFFFAOYSA-N 0.000 description 1
- FWGZLZNGAVBRPW-UHFFFAOYSA-N alumane;strontium Chemical compound [AlH3].[Sr] FWGZLZNGAVBRPW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910001439 antimony ion Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- IQONKZQQCCPWMS-UHFFFAOYSA-N barium lanthanum Chemical compound [Ba].[La] IQONKZQQCCPWMS-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- XBYNNYGGLWJASC-UHFFFAOYSA-N barium titanium Chemical compound [Ti].[Ba] XBYNNYGGLWJASC-UHFFFAOYSA-N 0.000 description 1
- YIMPFANPVKETMG-UHFFFAOYSA-N barium zirconium Chemical compound [Zr].[Ba] YIMPFANPVKETMG-UHFFFAOYSA-N 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- DKDQMLPMKQLBHQ-UHFFFAOYSA-N strontium;barium(2+);oxido(dioxo)niobium Chemical compound [Sr+2].[Ba+2].[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O DKDQMLPMKQLBHQ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
Abstract
Description
このトレンチ内に高誘電率材料が蒸着され、仕事関数用の材料層が高誘電率材料を覆うように形成される。歪みのかけられたシリコンを含む材料層の表面は露出され、この歪みのかけられたシリコンを含む材料層内に不純物ドープされた領域が形成される。
MOSトランジスタは、NチャネルMOSトランジスタ(NMOSトランジスタ)であっても、PチャネルMOSトランジスタ(PMOSトランジスタ)であってもよい。MOSの構成要素を製造するうえでの各種ステップは周知であるので、簡素化のために、従来の多くのステップは、本文では簡潔に記載するか、周知のプロセスの詳細を記載せずに、全体として省略するものとする。
Claims (10)
- MOSトランジスタ(100)の製造方法であって、
埋め込み絶縁層(104)を覆うシリコン層(106)を設けるステップと、
前記シリコン層を覆うように、シリコンを含む材料層(108)をエピタキシャル成長させるステップと、
前記シリコンを含む材料層内にトレンチ(112)をエッチングし、前記シリコン層を露出させるステップと、
前記トレンチ内に、ゲート絶縁体(138)とゲート電極(140)とを含むMOSトランジスタゲートスタック(148)を形成するステップと、
前記MOSトランジスタゲートスタックを注入マスクとして使用して、前記シリコンを含む材料層内に導電性決定型イオンを注入するステップ(142)と、を含む、方法。 - 前記シリコン層(106)を設けるステップは、厚みが約6nm以下のシリコン層を設けるステップを含む、請求項1記載の方法。
- 前記シリコンを含む材料層(108)をエピタキシャル成長させるステップは、歪み誘起ドーパントの存在下で前記シリコンを含む材料層をエピタキシャル成長させるステップを含む、請求項1記載の方法。
- 前記シリコンを含む材料層(108)をエピタキシャル成長させるステップは、導電性決定型ドーパントの存在下で前記シリコンを含む材料層をエピタキシャル成長させるステップを含む、請求項1記載の方法。
- 前記MOSトランジスタゲートスタック(148)を形成するステップは、
前記トレンチ内前記シリコン層(106)を覆うように誘電材料(132)を蒸着するステップと、
前記誘電材料を覆うように仕事関数材料(134)を蒸着するステップと、を含む請求項1記載の方法。 - 前記誘電材料(132)を蒸着するステップは、高誘電率の誘電材料を蒸着するステップを含む、請求項5記載の方法。
- 前記トレンチ(112)のエッチングステップ後に、前記トレンチ内に界面層(114)を形成するステップをさらに含む、請求項1記載の方法。
- 前記トレンチ(112)のエッチングステップ後に、前記トレンチのサイドウォール(124)の周りにスペーサ(130)を形成するステップをさらに含む、請求項1記載の方法。
- 前記仕事関数材料(134)の蒸着ステップ後に、キャップ層(136)を蒸着するステップをさらに含む、請求項1記載の方法。
- 前記キャップ層(136)を蒸着するステップは、多結晶シリコン層を蒸着するステップを含む、請求項9記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/838,982 | 2007-08-15 | ||
US11/838,982 US20090045458A1 (en) | 2007-08-15 | 2007-08-15 | Mos transistors for thin soi integration and methods for fabricating the same |
PCT/US2008/008816 WO2009023081A1 (en) | 2007-08-15 | 2008-07-18 | Mos transistors for thin soi integration and methods for fabricating the same |
Publications (2)
Publication Number | Publication Date |
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JP2010537401A true JP2010537401A (ja) | 2010-12-02 |
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JP (1) | JP5444222B2 (ja) |
KR (1) | KR20100053559A (ja) |
CN (1) | CN101743630B (ja) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012212796A (ja) * | 2011-03-31 | 2012-11-01 | National Institute Of Advanced Industrial & Technology | 微細構造物の製造方法、該微細構造物の製造方法により製造される微細構造物、及び該微細構造物を有する電界効果型半導体素子 |
WO2014156923A1 (ja) * | 2013-03-27 | 2014-10-02 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置の製造方法 |
JP2015167247A (ja) * | 2009-12-04 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 半導体素子 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9306010B2 (en) | 2012-03-14 | 2016-04-05 | Infineon Technologies Ag | Semiconductor arrangement |
US10504821B2 (en) * | 2016-01-29 | 2019-12-10 | United Microelectronics Corp. | Through-silicon via structure |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6469057A (en) * | 1987-09-10 | 1989-03-15 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPH04139764A (ja) * | 1990-10-01 | 1992-05-13 | Canon Inc | 絶縁ゲート薄膜トランジスタの製造方法 |
JP2001274389A (ja) * | 2000-03-28 | 2001-10-05 | Toshiba Corp | 半導体装置およびその製造方法 |
US20050090066A1 (en) * | 2003-10-22 | 2005-04-28 | International Business Machines Corporation | Method and manufacture of thin silicon on insulator (soi) with recessed channel and devices manufactured thereby |
JP2005167068A (ja) * | 2003-12-04 | 2005-06-23 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2005175082A (ja) * | 2003-12-09 | 2005-06-30 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2005332993A (ja) * | 2004-05-20 | 2005-12-02 | Sanyo Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2006060046A (ja) * | 2004-08-20 | 2006-03-02 | Toshiba Corp | 半導体装置 |
FR2880190A1 (fr) * | 2004-12-24 | 2006-06-30 | Commissariat Energie Atomique | Structure amelioree de transistor sur film mince semi-conducteur |
JP2007500936A (ja) * | 2003-07-31 | 2007-01-18 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | ゲートの枯渇を低減した注入ゲート電極を有する電界効果型トランジスタ、及び、このトランジスタを製造する方法 |
JP2007013025A (ja) * | 2005-07-04 | 2007-01-18 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタおよびその製造方法 |
JP2007019513A (ja) * | 2005-07-06 | 2007-01-25 | Infineon Technologies Ag | 埋め込みゲートを有する半導体装置及びその製造方法 |
JP2008515190A (ja) * | 2004-09-27 | 2008-05-08 | インテル コーポレイション | 金属ゲート電極半導体デバイス |
JP2008529274A (ja) * | 2005-01-26 | 2008-07-31 | フリースケール セミコンダクター インコーポレイテッド | Cmosプロセス用金属ゲート・トランジスタ及びその製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5998288A (en) * | 1998-04-17 | 1999-12-07 | Advanced Micro Devices, Inc. | Ultra thin spacers formed laterally adjacent a gate conductor recessed below the upper surface of a substrate |
US6392271B1 (en) * | 1999-06-28 | 2002-05-21 | Intel Corporation | Structure and process flow for fabrication of dual gate floating body integrated MOS transistors |
US6555891B1 (en) * | 2000-10-17 | 2003-04-29 | International Business Machines Corporation | SOI hybrid structure with selective epitaxial growth of silicon |
TWI288472B (en) * | 2001-01-18 | 2007-10-11 | Toshiba Corp | Semiconductor device and method of fabricating the same |
US6787424B1 (en) * | 2001-02-09 | 2004-09-07 | Advanced Micro Devices, Inc. | Fully depleted SOI transistor with elevated source and drain |
US6774000B2 (en) * | 2002-11-20 | 2004-08-10 | International Business Machines Corporation | Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures |
US7256104B2 (en) * | 2003-05-21 | 2007-08-14 | Canon Kabushiki Kaisha | Substrate manufacturing method and substrate processing apparatus |
DE10351237B4 (de) * | 2003-10-31 | 2010-09-16 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines Transistors mit erhöhten und/oder verspannten Drain- und Sourcegebieten und Transistor |
US20050151166A1 (en) * | 2004-01-09 | 2005-07-14 | Chun-Chieh Lin | Metal contact structure and method of manufacture |
US6921691B1 (en) * | 2004-03-18 | 2005-07-26 | Infineon Technologies Ag | Transistor with dopant-bearing metal in source and drain |
DE102004031119A1 (de) * | 2004-06-28 | 2006-01-19 | Infineon Technologies Ag | Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung |
US7704840B2 (en) * | 2006-12-15 | 2010-04-27 | Advanced Micro Devices, Inc. | Stress enhanced transistor and methods for its fabrication |
-
2007
- 2007-08-15 US US11/838,982 patent/US20090045458A1/en not_active Abandoned
-
2008
- 2008-07-18 CN CN2008800249318A patent/CN101743630B/zh not_active Expired - Fee Related
- 2008-07-18 KR KR1020107003302A patent/KR20100053559A/ko not_active Application Discontinuation
- 2008-07-18 WO PCT/US2008/008816 patent/WO2009023081A1/en active Application Filing
- 2008-07-18 JP JP2010520979A patent/JP5444222B2/ja not_active Expired - Fee Related
- 2008-07-18 EP EP08794585A patent/EP2186123A1/en not_active Withdrawn
- 2008-08-14 TW TW097130923A patent/TW200915478A/zh unknown
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6469057A (en) * | 1987-09-10 | 1989-03-15 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPH04139764A (ja) * | 1990-10-01 | 1992-05-13 | Canon Inc | 絶縁ゲート薄膜トランジスタの製造方法 |
JP2001274389A (ja) * | 2000-03-28 | 2001-10-05 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2007500936A (ja) * | 2003-07-31 | 2007-01-18 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | ゲートの枯渇を低減した注入ゲート電極を有する電界効果型トランジスタ、及び、このトランジスタを製造する方法 |
US20050090066A1 (en) * | 2003-10-22 | 2005-04-28 | International Business Machines Corporation | Method and manufacture of thin silicon on insulator (soi) with recessed channel and devices manufactured thereby |
JP2005167068A (ja) * | 2003-12-04 | 2005-06-23 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2005175082A (ja) * | 2003-12-09 | 2005-06-30 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2005332993A (ja) * | 2004-05-20 | 2005-12-02 | Sanyo Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2006060046A (ja) * | 2004-08-20 | 2006-03-02 | Toshiba Corp | 半導体装置 |
JP2008515190A (ja) * | 2004-09-27 | 2008-05-08 | インテル コーポレイション | 金属ゲート電極半導体デバイス |
FR2880190A1 (fr) * | 2004-12-24 | 2006-06-30 | Commissariat Energie Atomique | Structure amelioree de transistor sur film mince semi-conducteur |
JP2008529274A (ja) * | 2005-01-26 | 2008-07-31 | フリースケール セミコンダクター インコーポレイテッド | Cmosプロセス用金属ゲート・トランジスタ及びその製造方法 |
JP2007013025A (ja) * | 2005-07-04 | 2007-01-18 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタおよびその製造方法 |
JP2007019513A (ja) * | 2005-07-06 | 2007-01-25 | Infineon Technologies Ag | 埋め込みゲートを有する半導体装置及びその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015167247A (ja) * | 2009-12-04 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 半導体素子 |
JP2012212796A (ja) * | 2011-03-31 | 2012-11-01 | National Institute Of Advanced Industrial & Technology | 微細構造物の製造方法、該微細構造物の製造方法により製造される微細構造物、及び該微細構造物を有する電界効果型半導体素子 |
WO2014156923A1 (ja) * | 2013-03-27 | 2014-10-02 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
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EP2186123A1 (en) | 2010-05-19 |
US20090045458A1 (en) | 2009-02-19 |
TW200915478A (en) | 2009-04-01 |
CN101743630A (zh) | 2010-06-16 |
CN101743630B (zh) | 2011-10-05 |
KR20100053559A (ko) | 2010-05-20 |
WO2009023081A1 (en) | 2009-02-19 |
JP5444222B2 (ja) | 2014-03-19 |
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