JP5444222B2 - 薄いsoiの集積化のためのmosトランジスタおよびその製造方法 - Google Patents
薄いsoiの集積化のためのmosトランジスタおよびその製造方法 Download PDFInfo
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- JP5444222B2 JP5444222B2 JP2010520979A JP2010520979A JP5444222B2 JP 5444222 B2 JP5444222 B2 JP 5444222B2 JP 2010520979 A JP2010520979 A JP 2010520979A JP 2010520979 A JP2010520979 A JP 2010520979A JP 5444222 B2 JP5444222 B2 JP 5444222B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 230000010354 integration Effects 0.000 title description 11
- 239000000463 material Substances 0.000 claims description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- 239000012212 insulator Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 16
- 239000007772 electrode material Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- -1 boron ions Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- WVEIBSXNFJMONP-UHFFFAOYSA-N [Ta].[K] Chemical compound [Ta].[K] WVEIBSXNFJMONP-UHFFFAOYSA-N 0.000 description 1
- FWGZLZNGAVBRPW-UHFFFAOYSA-N alumane;strontium Chemical compound [AlH3].[Sr] FWGZLZNGAVBRPW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910001439 antimony ion Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- IQONKZQQCCPWMS-UHFFFAOYSA-N barium lanthanum Chemical compound [Ba].[La] IQONKZQQCCPWMS-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- XBYNNYGGLWJASC-UHFFFAOYSA-N barium titanium Chemical compound [Ti].[Ba] XBYNNYGGLWJASC-UHFFFAOYSA-N 0.000 description 1
- YIMPFANPVKETMG-UHFFFAOYSA-N barium zirconium Chemical compound [Zr].[Ba] YIMPFANPVKETMG-UHFFFAOYSA-N 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- DKDQMLPMKQLBHQ-UHFFFAOYSA-N strontium;barium(2+);oxido(dioxo)niobium Chemical compound [Sr+2].[Ba+2].[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O DKDQMLPMKQLBHQ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L29/42312—Gate electrodes for field effect devices
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- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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Description
このトレンチ内に高誘電率材料が蒸着され、仕事関数用の材料層が高誘電率材料を覆うように形成される。歪みのかけられたシリコンを含む材料層の表面は露出され、この歪みのかけられたシリコンを含む材料層内に不純物ドープされた領域が形成される。
MOSトランジスタは、NチャネルMOSトランジスタ(NMOSトランジスタ)であっても、PチャネルMOSトランジスタ(PMOSトランジスタ)であってもよい。MOSの構成要素を製造するうえでの各種ステップは周知であるので、簡素化のために、従来の多くのステップは、本文では簡潔に記載するか、周知のプロセスの詳細を記載せずに、全体として省略するものとする。
Claims (5)
- MOSトランジスタ(100)の製造方法であって、
埋め込み絶縁層(104)を覆うシリコン層(106)を設けるステップと、
前記シリコン層を覆うように、シリコンを含む材料層(108)をエピタキシャル成長させるステップと、
前記シリコンを含む材料層内にトレンチ(112)をエッチングし、前記シリコン層を露出させるステップと、
前記トレンチ内に界面層(114)を形成するステップと、
前記界面層を覆う誘電材料層(128)を、全面的に蒸着するステップと、
前記トレンチ内にスペーサ(130)を形成する前記誘電材料層を異方性エッチングし、前記トレンチの底面にて前記界面層を露出させ、前記界面層を、少なくとも除去されていない状態で残すステップと、
直後に、前記界面層を覆い、且つ、高誘電率を有するゲート絶縁体(132)を前記トレンチ内に蒸着することによって、MOSトランジスタゲートスタック(148)を前記トレンチ内に形成し、前記界面層によって前記シリコン層と分離した前記ゲート絶縁体を覆うゲート電極材料(134)を蒸着するステップと、
前記MOSトランジスタゲートスタックと前記界面層とを注入マスクとして使用して、前記シリコンを含む材料層内に導電性決定型イオン(142)を注入して、前記界面層に隣接するソース/ドレイン領域(116,118)を形成するステップと、を含む、方法。 - 前記シリコン層(106)を設けるステップは、厚みが6nm以下のシリコン層を設けるステップを含む、請求項1記載の方法。
- 前記シリコンを含む材料層(108)をエピタキシャル成長させるステップは、歪み誘起ドーパントの存在下で前記シリコンを含む材料層をエピタキシャル成長させるステップを含む、請求項1記載の方法。
- 前記シリコンを含む材料層(108)をエピタキシャル成長させるステップは、導電性決定型ドーパントの存在下で前記シリコンを含む材料層をエピタキシャル成長させるステップを含む、請求項1記載の方法。
- 前記ゲート電極材料(134)の蒸着ステップ後に、多結晶シリコンからなるキャップ層(136)を蒸着するステップをさらに含む、請求項1記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US11/838,982 US20090045458A1 (en) | 2007-08-15 | 2007-08-15 | Mos transistors for thin soi integration and methods for fabricating the same |
US11/838,982 | 2007-08-15 | ||
PCT/US2008/008816 WO2009023081A1 (en) | 2007-08-15 | 2008-07-18 | Mos transistors for thin soi integration and methods for fabricating the same |
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JP2010537401A JP2010537401A (ja) | 2010-12-02 |
JP5444222B2 true JP5444222B2 (ja) | 2014-03-19 |
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US (1) | US20090045458A1 (ja) |
EP (1) | EP2186123A1 (ja) |
JP (1) | JP5444222B2 (ja) |
KR (1) | KR20100053559A (ja) |
CN (1) | CN101743630B (ja) |
TW (1) | TW200915478A (ja) |
WO (1) | WO2009023081A1 (ja) |
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WO2011068028A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, semiconductor device, and method for manufacturing the same |
JP2012212796A (ja) * | 2011-03-31 | 2012-11-01 | National Institute Of Advanced Industrial & Technology | 微細構造物の製造方法、該微細構造物の製造方法により製造される微細構造物、及び該微細構造物を有する電界効果型半導体素子 |
US9306010B2 (en) * | 2012-03-14 | 2016-04-05 | Infineon Technologies Ag | Semiconductor arrangement |
US20160064285A1 (en) * | 2013-03-27 | 2016-03-03 | Ps4 Luxco S.A.R.L.) | Manufacturing method for semiconductor device |
US10504821B2 (en) * | 2016-01-29 | 2019-12-10 | United Microelectronics Corp. | Through-silicon via structure |
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US20090045458A1 (en) | 2009-02-19 |
WO2009023081A1 (en) | 2009-02-19 |
TW200915478A (en) | 2009-04-01 |
EP2186123A1 (en) | 2010-05-19 |
KR20100053559A (ko) | 2010-05-20 |
JP2010537401A (ja) | 2010-12-02 |
CN101743630A (zh) | 2010-06-16 |
CN101743630B (zh) | 2011-10-05 |
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