TWI385733B - 互補金氧半導體製程之金屬閘極電晶體及其製造方法 - Google Patents
互補金氧半導體製程之金屬閘極電晶體及其製造方法 Download PDFInfo
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- TWI385733B TWI385733B TW095100491A TW95100491A TWI385733B TW I385733 B TWI385733 B TW I385733B TW 095100491 A TW095100491 A TW 095100491A TW 95100491 A TW95100491 A TW 95100491A TW I385733 B TWI385733 B TW I385733B
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- Prior art keywords
- forming
- region
- metal oxide
- conductive metal
- barrier layer
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 title claims description 55
- 239000002184 metal Substances 0.000 title claims description 55
- 230000008569 process Effects 0.000 title description 21
- 238000004519 manufacturing process Methods 0.000 title description 4
- 230000000295 complement effect Effects 0.000 title description 3
- 238000003672 processing method Methods 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 claims description 54
- 229910044991 metal oxide Inorganic materials 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 47
- 230000004888 barrier function Effects 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 30
- 125000006850 spacer group Chemical group 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 18
- 238000007254 oxidation reaction Methods 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 230000003064 anti-oxidating effect Effects 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910004200 TaSiN Inorganic materials 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 239000003963 antioxidant agent Substances 0.000 claims 1
- 230000003078 antioxidant effect Effects 0.000 claims 1
- 238000005253 cladding Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 98
- 229910052732 germanium Inorganic materials 0.000 description 29
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 29
- 239000006117 anti-reflective coating Substances 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 230000008901 benefit Effects 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- 239000007943 implant Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 241000252506 Characiformes Species 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- SIOXCQVDGDVRSM-UHFFFAOYSA-B [Hf+4].[Hf+4].[Hf+4].OC(CC([O-])=O)(CC([O-])=O)C([O-])=O.OC(CC([O-])=O)(CC([O-])=O)C([O-])=O.OC(CC([O-])=O)(CC([O-])=O)C([O-])=O.OC(CC([O-])=O)(CC([O-])=O)C([O-])=O Chemical compound [Hf+4].[Hf+4].[Hf+4].OC(CC([O-])=O)(CC([O-])=O)C([O-])=O.OC(CC([O-])=O)(CC([O-])=O)C([O-])=O.OC(CC([O-])=O)(CC([O-])=O)C([O-])=O.OC(CC([O-])=O)(CC([O-])=O)C([O-])=O SIOXCQVDGDVRSM-UHFFFAOYSA-B 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- -1 hafnium aluminate Chemical class 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0172—Manufacturing their gate conductors
- H10D84/0174—Manufacturing their gate conductors the gate conductors being silicided
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0172—Manufacturing their gate conductors
- H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0184—Manufacturing their gate sidewall spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/043,337 US7109079B2 (en) | 2005-01-26 | 2005-01-26 | Metal gate transistor CMOS process and method for making |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200636875A TW200636875A (en) | 2006-10-16 |
| TWI385733B true TWI385733B (zh) | 2013-02-11 |
Family
ID=36697371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095100491A TWI385733B (zh) | 2005-01-26 | 2006-01-05 | 互補金氧半導體製程之金屬閘極電晶體及其製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7109079B2 (enExample) |
| JP (1) | JP4685882B2 (enExample) |
| KR (1) | KR101185685B1 (enExample) |
| CN (1) | CN100483687C (enExample) |
| TW (1) | TWI385733B (enExample) |
| WO (1) | WO2006081003A2 (enExample) |
Families Citing this family (77)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4429036B2 (ja) * | 2004-02-27 | 2010-03-10 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US7588988B2 (en) | 2004-08-31 | 2009-09-15 | Micron Technology, Inc. | Method of forming apparatus having oxide films formed using atomic layer deposition |
| US20060172480A1 (en) * | 2005-02-03 | 2006-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Single metal gate CMOS device design |
| US7687409B2 (en) | 2005-03-29 | 2010-03-30 | Micron Technology, Inc. | Atomic layer deposited titanium silicon oxide films |
| US7572695B2 (en) * | 2005-05-27 | 2009-08-11 | Micron Technology, Inc. | Hafnium titanium oxide films |
| JP2007019396A (ja) * | 2005-07-11 | 2007-01-25 | Renesas Technology Corp | Ｍｏｓ構造を有する半導体装置およびその製造方法 |
| US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
| US7972974B2 (en) | 2006-01-10 | 2011-07-05 | Micron Technology, Inc. | Gallium lanthanide oxide films |
| US7579282B2 (en) * | 2006-01-13 | 2009-08-25 | Freescale Semiconductor, Inc. | Method for removing metal foot during high-k dielectric/metal gate etching |
| US7510956B2 (en) * | 2006-01-30 | 2009-03-31 | Fressscale Semiconductor, Inc. | MOS device with multi-layer gate stack |
| US20070228480A1 (en) * | 2006-04-03 | 2007-10-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS device having PMOS and NMOS transistors with different gate structures |
| KR100729366B1 (ko) * | 2006-05-19 | 2007-06-15 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
| US7655550B2 (en) * | 2006-06-30 | 2010-02-02 | Freescale Semiconductor, Inc. | Method of making metal gate transistors |
| JP2008016538A (ja) * | 2006-07-04 | 2008-01-24 | Renesas Technology Corp | Ｍｏｓ構造を有する半導体装置及びその製造方法 |
| US9070759B2 (en) * | 2006-09-25 | 2015-06-30 | Infineon Technologies Ag | Semiconductor device and method of making same |
| US7378713B2 (en) * | 2006-10-25 | 2008-05-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices with dual-metal gate structures and fabrication methods thereof |
| US7812414B2 (en) * | 2007-01-23 | 2010-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid process for forming metal gates |
| JP2008210874A (ja) * | 2007-02-23 | 2008-09-11 | Toshiba Corp | 半導体装置の製造方法 |
| JP2008288364A (ja) * | 2007-05-17 | 2008-11-27 | Sony Corp | 半導体装置および半導体装置の製造方法 |
| US8173532B2 (en) | 2007-07-30 | 2012-05-08 | International Business Machines Corporation | Semiconductor transistors having reduced distances between gate electrode regions |
| US20090045458A1 (en) * | 2007-08-15 | 2009-02-19 | Advanced Micro Devices, Inc. | Mos transistors for thin soi integration and methods for fabricating the same |
| US8030709B2 (en) * | 2007-12-12 | 2011-10-04 | International Business Machines Corporation | Metal gate stack and semiconductor gate stack for CMOS devices |
| US20090206416A1 (en) * | 2008-02-19 | 2009-08-20 | International Business Machines Corporation | Dual metal gate structures and methods |
| US8536660B2 (en) * | 2008-03-12 | 2013-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid process for forming metal gates of MOS devices |
| US7955926B2 (en) * | 2008-03-26 | 2011-06-07 | International Business Machines Corporation | Structure and method to control oxidation in high-k gate structures |
| US7994036B2 (en) * | 2008-07-01 | 2011-08-09 | Panasonic Corporation | Semiconductor device and fabrication method for the same |
| US20100038715A1 (en) * | 2008-08-18 | 2010-02-18 | International Business Machines Corporation | Thin body silicon-on-insulator transistor with borderless self-aligned contacts |
| US20100044804A1 (en) * | 2008-08-25 | 2010-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Novel high-k metal gate structure and method of making |
| US7947588B2 (en) * | 2008-08-26 | 2011-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a CMOS device with doped conducting metal oxide as the gate electrode |
| US7816243B2 (en) * | 2009-02-18 | 2010-10-19 | United Microelectronics Corp. | Semiconductor device and method of fabricating the same |
| US8026539B2 (en) * | 2009-02-18 | 2011-09-27 | Globalfoundries Inc. | Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the same |
| US8350586B2 (en) | 2009-07-02 | 2013-01-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus of deembedding |
| US8232154B2 (en) * | 2009-09-21 | 2012-07-31 | United Microelectronics Corp. | Method for fabricating semiconductor device |
| US8617946B2 (en) * | 2009-11-11 | 2013-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits including metal gates and fabrication methods thereof |
| DE102009055395B4 (de) * | 2009-12-30 | 2011-12-29 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Vordotiertes Halbleitermaterial für eine Metallgateelektrodenstruktur mit großem ε von p-und n-Kanaltransistoren |
| US8088685B2 (en) * | 2010-02-09 | 2012-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integration of bottom-up metal film deposition |
| US8436422B2 (en) * | 2010-03-08 | 2013-05-07 | Sematech, Inc. | Tunneling field-effect transistor with direct tunneling for enhanced tunneling current |
| CN102237269B (zh) * | 2010-04-21 | 2013-08-28 | 中国科学院微电子研究所 | 以氮化铝为势垒层的Mo基金属栅叠层结构的刻蚀方法 |
| US8163620B2 (en) | 2010-04-21 | 2012-04-24 | Institute of Microelectronics, Chinese Academy of Sciences | Method for etching Mo-based metal gate stack with aluminium nitride barrier |
| KR101675319B1 (ko) | 2010-10-04 | 2016-11-14 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| DE102010063907B4 (de) * | 2010-12-22 | 2018-03-29 | Globalfoundries Dresden Module One Llc & Co. Kg | Verfahren mit Deckschichtentfernung von Gateelektrodenstrukturen nach selektivem Bilden eines verformungsinduzierenden Halbleitermaterials |
| US9166020B2 (en) | 2011-03-01 | 2015-10-20 | United Microelectronics Corp. | Metal gate structure and manufacturing method thereof |
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| KR20120107762A (ko) * | 2011-03-22 | 2012-10-04 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
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Also Published As
| Publication number | Publication date |
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| KR20070094807A (ko) | 2007-09-21 |
| KR101185685B1 (ko) | 2012-09-24 |
| JP4685882B2 (ja) | 2011-05-18 |
| TW200636875A (en) | 2006-10-16 |
| CN101091244A (zh) | 2007-12-19 |
| JP2008529274A (ja) | 2008-07-31 |
| WO2006081003A2 (en) | 2006-08-03 |
| CN100483687C (zh) | 2009-04-29 |
| US20060166424A1 (en) | 2006-07-27 |
| WO2006081003A3 (en) | 2007-04-26 |
| US7109079B2 (en) | 2006-09-19 |
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