KR101185685B1 - Ｃｍｏｓ 프로세스를 위한 금속 게이트 트랜지스터 및 제조방법 - Google Patents

Ｃｍｏｓ 프로세스를 위한 금속 게이트 트랜지스터 및 제조방법 Download PDF

Info

Publication number
KR101185685B1
KR101185685B1 KR1020077017127A KR20077017127A KR101185685B1 KR 101185685 B1 KR101185685 B1 KR 101185685B1 KR 1020077017127 A KR1020077017127 A KR 1020077017127A KR 20077017127 A KR20077017127 A KR 20077017127A KR 101185685 B1 KR101185685 B1 KR 101185685B1
Authority
KR
South Korea
Prior art keywords
gate
forming
region
metal oxide
over
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020077017127A
Other languages
English (en)
Korean (ko)
Other versions
KR20070094807A (ko
Inventor
3세 제임스 케이. 셰퍼
올루분미 오. 어데투투
Original Assignee
프리스케일 세미컨덕터, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20070094807A publication Critical patent/KR20070094807A/ko
Application granted granted Critical
Publication of KR101185685B1 publication Critical patent/KR101185685B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0174—Manufacturing their gate conductors the gate conductors being silicided
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0184—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020077017127A 2005-01-26 2005-12-16 Ｃｍｏｓ 프로세스를 위한 금속 게이트 트랜지스터 및 제조방법 Expired - Fee Related KR101185685B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/043,337 US7109079B2 (en) 2005-01-26 2005-01-26 Metal gate transistor CMOS process and method for making
US11/043,337 2005-01-26
PCT/US2005/045727 WO2006081003A2 (en) 2005-01-26 2005-12-16 Metal gate transistor for cmos process and method for making

Publications (2)

Publication Number Publication Date
KR20070094807A KR20070094807A (ko) 2007-09-21
KR101185685B1 true KR101185685B1 (ko) 2012-09-24

Family

ID=36697371

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077017127A Expired - Fee Related KR101185685B1 (ko) 2005-01-26 2005-12-16 Ｃｍｏｓ 프로세스를 위한 금속 게이트 트랜지스터 및 제조방법

Country Status (6)

Country Link
US (1) US7109079B2 (enExample)
JP (1) JP4685882B2 (enExample)
KR (1) KR101185685B1 (enExample)
CN (1) CN100483687C (enExample)
TW (1) TWI385733B (enExample)
WO (1) WO2006081003A2 (enExample)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4429036B2 (ja) * 2004-02-27 2010-03-10 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US20060172480A1 (en) * 2005-02-03 2006-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Single metal gate CMOS device design
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US7572695B2 (en) * 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
JP2007019396A (ja) * 2005-07-11 2007-01-25 Renesas Technology Corp Ｍｏｓ構造を有する半導体装置およびその製造方法
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7972974B2 (en) 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
US7579282B2 (en) * 2006-01-13 2009-08-25 Freescale Semiconductor, Inc. Method for removing metal foot during high-k dielectric/metal gate etching
US7510956B2 (en) * 2006-01-30 2009-03-31 Fressscale Semiconductor, Inc. MOS device with multi-layer gate stack
US20070228480A1 (en) * 2006-04-03 2007-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS device having PMOS and NMOS transistors with different gate structures
KR100729366B1 (ko) * 2006-05-19 2007-06-15 삼성전자주식회사 반도체 장치 및 그 형성 방법
US7655550B2 (en) * 2006-06-30 2010-02-02 Freescale Semiconductor, Inc. Method of making metal gate transistors
JP2008016538A (ja) * 2006-07-04 2008-01-24 Renesas Technology Corp Ｍｏｓ構造を有する半導体装置及びその製造方法
US9070759B2 (en) * 2006-09-25 2015-06-30 Infineon Technologies Ag Semiconductor device and method of making same
US7378713B2 (en) * 2006-10-25 2008-05-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with dual-metal gate structures and fabrication methods thereof
US7812414B2 (en) * 2007-01-23 2010-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid process for forming metal gates
JP2008210874A (ja) * 2007-02-23 2008-09-11 Toshiba Corp 半導体装置の製造方法
JP2008288364A (ja) * 2007-05-17 2008-11-27 Sony Corp 半導体装置および半導体装置の製造方法
US8173532B2 (en) 2007-07-30 2012-05-08 International Business Machines Corporation Semiconductor transistors having reduced distances between gate electrode regions
US20090045458A1 (en) * 2007-08-15 2009-02-19 Advanced Micro Devices, Inc. Mos transistors for thin soi integration and methods for fabricating the same
US8030709B2 (en) * 2007-12-12 2011-10-04 International Business Machines Corporation Metal gate stack and semiconductor gate stack for CMOS devices
US20090206416A1 (en) * 2008-02-19 2009-08-20 International Business Machines Corporation Dual metal gate structures and methods
US8536660B2 (en) * 2008-03-12 2013-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid process for forming metal gates of MOS devices
US7955926B2 (en) * 2008-03-26 2011-06-07 International Business Machines Corporation Structure and method to control oxidation in high-k gate structures
US7994036B2 (en) * 2008-07-01 2011-08-09 Panasonic Corporation Semiconductor device and fabrication method for the same
US20100038715A1 (en) * 2008-08-18 2010-02-18 International Business Machines Corporation Thin body silicon-on-insulator transistor with borderless self-aligned contacts
US20100044804A1 (en) * 2008-08-25 2010-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Novel high-k metal gate structure and method of making
US7947588B2 (en) * 2008-08-26 2011-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a CMOS device with doped conducting metal oxide as the gate electrode
US7816243B2 (en) * 2009-02-18 2010-10-19 United Microelectronics Corp. Semiconductor device and method of fabricating the same
US8026539B2 (en) * 2009-02-18 2011-09-27 Globalfoundries Inc. Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the same
US8350586B2 (en) 2009-07-02 2013-01-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus of deembedding
US8232154B2 (en) * 2009-09-21 2012-07-31 United Microelectronics Corp. Method for fabricating semiconductor device
US8617946B2 (en) * 2009-11-11 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits including metal gates and fabrication methods thereof
DE102009055395B4 (de) * 2009-12-30 2011-12-29 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Vordotiertes Halbleitermaterial für eine Metallgateelektrodenstruktur mit großem ε von p-und n-Kanaltransistoren
US8088685B2 (en) * 2010-02-09 2012-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Integration of bottom-up metal film deposition
US8436422B2 (en) * 2010-03-08 2013-05-07 Sematech, Inc. Tunneling field-effect transistor with direct tunneling for enhanced tunneling current
CN102237269B (zh) * 2010-04-21 2013-08-28 中国科学院微电子研究所 以氮化铝为势垒层的Mo基金属栅叠层结构的刻蚀方法
US8163620B2 (en) 2010-04-21 2012-04-24 Institute of Microelectronics, Chinese Academy of Sciences Method for etching Mo-based metal gate stack with aluminium nitride barrier
KR101675319B1 (ko) 2010-10-04 2016-11-14 삼성전자주식회사 반도체 소자의 제조 방법
DE102010063907B4 (de) * 2010-12-22 2018-03-29 Globalfoundries Dresden Module One Llc & Co. Kg Verfahren mit Deckschichtentfernung von Gateelektrodenstrukturen nach selektivem Bilden eines verformungsinduzierenden Halbleitermaterials
US9166020B2 (en) 2011-03-01 2015-10-20 United Microelectronics Corp. Metal gate structure and manufacturing method thereof
US8519487B2 (en) 2011-03-21 2013-08-27 United Microelectronics Corp. Semiconductor device
KR20120107762A (ko) * 2011-03-22 2012-10-04 삼성전자주식회사 반도체 소자의 제조 방법
US9384962B2 (en) 2011-04-07 2016-07-05 United Microelectronics Corp. Oxygen treatment of replacement work-function metals in CMOS transistor gates
US8530980B2 (en) 2011-04-27 2013-09-10 United Microelectronics Corp. Gate stack structure with etch stop layer and manufacturing process thereof
US9269634B2 (en) 2011-05-16 2016-02-23 Globalfoundries Inc. Self-aligned metal gate CMOS with metal base layer and dummy gate structure
US8841733B2 (en) 2011-05-17 2014-09-23 United Microelectronics Corp. Semiconductor device and method of fabricating the same
CN102420187B (zh) * 2011-06-07 2014-02-05 上海华力微电子有限公司 一种改善先栅极工艺中高k栅电介质pmos负偏置温度不稳定性效应的方法
US8673758B2 (en) 2011-06-16 2014-03-18 United Microelectronics Corp. Structure of metal gate and fabrication method thereof
US9490342B2 (en) 2011-06-16 2016-11-08 United Microelectronics Corp. Method for fabricating semiconductor device
TWI509667B (zh) * 2011-06-20 2015-11-21 United Microelectronics Corp 金屬閘極之結構及其製作方法
US8536038B2 (en) 2011-06-21 2013-09-17 United Microelectronics Corp. Manufacturing method for metal gate using ion implantation
US9269580B2 (en) 2011-06-27 2016-02-23 Cree, Inc. Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof
US8486790B2 (en) 2011-07-18 2013-07-16 United Microelectronics Corp. Manufacturing method for metal gate
US8551876B2 (en) 2011-08-18 2013-10-08 United Microelectronics Corp. Manufacturing method for semiconductor device having metal gate
US8872286B2 (en) 2011-08-22 2014-10-28 United Microelectronics Corp. Metal gate structure and fabrication method thereof
US8691681B2 (en) 2012-01-04 2014-04-08 United Microelectronics Corp. Semiconductor device having a metal gate and fabricating method thereof
US8860181B2 (en) 2012-03-07 2014-10-14 United Microelectronics Corp. Thin film resistor structure
US9093559B2 (en) * 2012-03-09 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of hybrid high-k/metal-gate stack fabrication
US9105623B2 (en) 2012-05-25 2015-08-11 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
US8883583B2 (en) * 2012-06-26 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, transistors, and methods of manufacture thereof
US8975666B2 (en) 2012-08-22 2015-03-10 United Microelectronics Corp. MOS transistor and process thereof
US9054172B2 (en) 2012-12-05 2015-06-09 United Microelectrnics Corp. Semiconductor structure having contact plug and method of making the same
US8735269B1 (en) 2013-01-15 2014-05-27 United Microelectronics Corp. Method for forming semiconductor structure having TiN layer
US9653300B2 (en) 2013-04-16 2017-05-16 United Microelectronics Corp. Structure of metal gate structure and manufacturing method of the same
US9159798B2 (en) 2013-05-03 2015-10-13 United Microelectronics Corp. Replacement gate process and device manufactured using the same
US9196542B2 (en) 2013-05-22 2015-11-24 United Microelectronics Corp. Method for manufacturing semiconductor devices
US8921947B1 (en) 2013-06-10 2014-12-30 United Microelectronics Corp. Multi-metal gate semiconductor device having triple diameter metal opening
US20150069534A1 (en) 2013-09-11 2015-03-12 United Microelectronics Corp. Semiconductor device and method for fabricating the same
US9105720B2 (en) 2013-09-11 2015-08-11 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
US9196546B2 (en) 2013-09-13 2015-11-24 United Microelectronics Corp. Metal gate transistor
US9231071B2 (en) 2014-02-24 2016-01-05 United Microelectronics Corp. Semiconductor structure and manufacturing method of the same
US10050147B2 (en) * 2015-07-24 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
CN106601605B (zh) 2015-10-19 2020-02-28 中芯国际集成电路制造(北京)有限公司 栅极堆叠结构、nmos器件、半导体装置及其制造方法
US10096596B2 (en) * 2015-12-15 2018-10-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having a plurality of gate structures
US11855005B2 (en) * 2021-06-21 2023-12-26 Globalfoundries U.S. Inc. Crackstop with embedded passive radio frequency noise suppressor and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255698B1 (en) 1999-04-28 2001-07-03 Advanced Micro Devices, Inc. Separately optimized gate structures for n-channel and p-channel transistors in an integrated circuit
US20050087870A1 (en) 2003-10-23 2005-04-28 Adetutu Olubunmi O. Semiconductor device and method of forming the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3804972B2 (ja) * 1994-10-04 2006-08-02 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体デバイス及びその製造方法
JPH10173169A (ja) * 1996-12-16 1998-06-26 Toshiba Corp 半導体装置及びその製造方法
JPH11214533A (ja) * 1998-01-29 1999-08-06 Nec Corp 半導体装置の製造方法
US6160282A (en) * 1998-04-21 2000-12-12 Foveon, Inc. CMOS image sensor employing silicide exclusion mask to reduce leakage and improve performance
EP1020922A3 (en) * 1998-12-28 2001-08-08 Infineon Technologies North America Corp. Insulated gate field effect transistor and method of manufacture thereof
JP2000208720A (ja) * 1999-01-13 2000-07-28 Lucent Technol Inc 電子デバイス、ｍｏｍキャパシタ、ｍｏｓトランジスタ、拡散バリア層
JP2001044428A (ja) * 1999-08-03 2001-02-16 New Japan Radio Co Ltd 半導体装置及びその製造方法
JP4074734B2 (ja) * 1999-10-29 2008-04-09 株式会社東芝 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
US6444512B1 (en) 2000-06-12 2002-09-03 Motorola, Inc. Dual metal gate transistors for CMOS process
US6423632B1 (en) 2000-07-21 2002-07-23 Motorola, Inc. Semiconductor device and a process for forming the same
US6429061B1 (en) * 2000-07-26 2002-08-06 International Business Machines Corporation Method to fabricate a strained Si CMOS structure using selective epitaxial deposition of Si after device isolation formation
KR20020056260A (ko) * 2000-12-29 2002-07-10 박종섭 반도체 소자의 금속 게이트 형성방법
JP3771801B2 (ja) * 2001-01-16 2006-04-26 株式会社ルネサステクノロジ 半導体装置
TW587302B (en) * 2001-03-07 2004-05-11 United Microelectronics Corp Manufacturing method for MOS capacitor
JP3779556B2 (ja) * 2001-03-27 2006-05-31 株式会社東芝 電界効果トランジスタ
US6518106B2 (en) 2001-05-26 2003-02-11 Motorola, Inc. Semiconductor device and a method therefor
US6894353B2 (en) 2002-07-31 2005-05-17 Freescale Semiconductor, Inc. Capped dual metal gate transistors for CMOS process and method for making the same
US6806126B1 (en) * 2002-09-06 2004-10-19 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor component
US6790719B1 (en) * 2003-04-09 2004-09-14 Freescale Semiconductor, Inc. Process for forming dual metal gate structures
KR20070045268A (ko) * 2004-08-24 2007-05-02 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스 및 그 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255698B1 (en) 1999-04-28 2001-07-03 Advanced Micro Devices, Inc. Separately optimized gate structures for n-channel and p-channel transistors in an integrated circuit
US20050087870A1 (en) 2003-10-23 2005-04-28 Adetutu Olubunmi O. Semiconductor device and method of forming the same

Also Published As

Publication number Publication date
KR20070094807A (ko) 2007-09-21
JP4685882B2 (ja) 2011-05-18
TWI385733B (zh) 2013-02-11
TW200636875A (en) 2006-10-16
CN101091244A (zh) 2007-12-19
JP2008529274A (ja) 2008-07-31
WO2006081003A2 (en) 2006-08-03
CN100483687C (zh) 2009-04-29
US20060166424A1 (en) 2006-07-27
WO2006081003A3 (en) 2007-04-26
US7109079B2 (en) 2006-09-19

Similar Documents

Publication Publication Date Title
KR101185685B1 (ko) Ｃｍｏｓ 프로세스를 위한 금속 게이트 트랜지스터 및 제조방법
US6894353B2 (en) Capped dual metal gate transistors for CMOS process and method for making the same
CN100487911C (zh) 用于cmos工艺的双金属栅极晶体管及其制造方法
US6794281B2 (en) Dual metal gate transistors for CMOS process
US7879666B2 (en) Semiconductor resistor formed in metal gate stack
US8367495B2 (en) Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric material
US9373695B2 (en) Method for improving selectivity of epi process
US8357978B1 (en) Methods of forming semiconductor devices with replacement gate structures
US20080076216A1 (en) Method to fabricate high-k/metal gate transistors using a double capping layer process
US8378432B2 (en) Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloy
US20130181265A1 (en) Methods of Forming a Gate Cap Layer Above a Replacement Gate Structure and a Semiconductor Device That Includes Such a Gate Structure and Cap Layer
US20130043592A1 (en) Methods of Forming a Replacement Gate Comprised of Silicon and a Device Including Same
US7456066B2 (en) Variable width offset spacers for mixed signal and system on chip devices
US7981784B2 (en) Methods of manufacturing a semiconductor device
US8492259B2 (en) Method of forming metal gate structure
US7217610B2 (en) Method for fabricating a semiconductor product with a memory area and a logic area
US8502325B2 (en) Metal high-K transistor having silicon sidewalls for reduced parasitic capacitance
US20060157796A1 (en) Semiconductor device having dual gate electrode and related method of formation
US20090224324A1 (en) Semiconductor device and manufacturing method thereof
TWI509702B (zh) 具有金屬閘極之電晶體及其製作方法
TWI452652B (zh) 半導體元件及其製造方法
CN111415934A (zh) Pmos和nmos的集成结构及其制造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20150904

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20160905

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170919

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170919

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000