JP2012527759A5 - - Google Patents
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- Publication number
- JP2012527759A5 JP2012527759A5 JP2012511350A JP2012511350A JP2012527759A5 JP 2012527759 A5 JP2012527759 A5 JP 2012527759A5 JP 2012511350 A JP2012511350 A JP 2012511350A JP 2012511350 A JP2012511350 A JP 2012511350A JP 2012527759 A5 JP2012527759 A5 JP 2012527759A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- contact
- oxide
- contact material
- electroless process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 26
- 238000000034 method Methods 0.000 claims 23
- 239000004065 semiconductor Substances 0.000 claims 21
- 238000000151 deposition Methods 0.000 claims 9
- 239000000126 substance Substances 0.000 claims 7
- 230000008021 deposition Effects 0.000 claims 6
- 229910045601 alloy Inorganic materials 0.000 claims 3
- 239000000956 alloy Substances 0.000 claims 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims 2
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 150000004715 keto acids Chemical class 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- -1 oxoacid anion Chemical class 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0908583.8 | 2009-05-19 | ||
| GBGB0908583.8A GB0908583D0 (en) | 2009-05-19 | 2009-05-19 | Semiconductor device contacts |
| PCT/GB2010/050804 WO2010133869A1 (en) | 2009-05-19 | 2010-05-18 | Semiconductor device contacts |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012527759A JP2012527759A (ja) | 2012-11-08 |
| JP2012527759A5 true JP2012527759A5 (enExample) | 2013-05-09 |
| JP5735490B2 JP5735490B2 (ja) | 2015-06-17 |
Family
ID=40834219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012511350A Active JP5735490B2 (ja) | 2009-05-19 | 2010-05-18 | 半導体素子接点 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8563434B2 (enExample) |
| EP (1) | EP2433296B1 (enExample) |
| JP (1) | JP5735490B2 (enExample) |
| GB (1) | GB0908583D0 (enExample) |
| WO (1) | WO2010133869A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011081322B4 (de) * | 2011-08-22 | 2015-03-26 | Siemens Aktiengesellschaft | Detektorelement, Strahlungsdetektor und medizinisches Gerät mit solchen Detektorelementen und Verfahren zum Erzeugen eines Detektorelements |
| CN102683490A (zh) * | 2012-05-09 | 2012-09-19 | 上海大学 | 在碲锌镉晶体表面制备In重掺杂的Au/In欧姆接触电极的方法 |
| GB201214567D0 (en) | 2012-08-15 | 2012-09-26 | Kromek Ltd | Detector and method of operation |
| DE102012215041A1 (de) * | 2012-08-23 | 2014-02-27 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines Halbleiterelementes eines direktkonvertierenden Röntgendetektors |
| CN112436062B (zh) * | 2020-12-01 | 2022-12-02 | 上海大学 | 用于碲锌镉辐射探测器的复合电极及其制备方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59227168A (ja) * | 1983-06-08 | 1984-12-20 | Fuji Electric Corp Res & Dev Ltd | 半導体放射線検出器 |
| JPH02152228A (ja) * | 1988-12-02 | 1990-06-12 | Matsushita Electric Ind Co Ltd | 半導体放射線検出器の製造方法 |
| JPH05145068A (ja) | 1991-11-21 | 1993-06-11 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| US5561082A (en) * | 1992-07-31 | 1996-10-01 | Kabushiki Kaisha Toshiba | Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide |
| JP2885616B2 (ja) * | 1992-07-31 | 1999-04-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JPH07321111A (ja) | 1994-05-26 | 1995-12-08 | Meidensha Corp | 無電解メッキによる集積回路の配線方法 |
| GB9717726D0 (en) | 1997-08-22 | 1997-10-29 | Univ Durham | Improvements in and relating to crystal growth |
| JP3486864B2 (ja) * | 1999-09-13 | 2004-01-13 | 株式会社トッパン エヌイーシー・サーキット ソリューションズ 富山 | 基板上の銅配線形成方法及び銅配線の形成された基板 |
| US7494927B2 (en) * | 2000-05-15 | 2009-02-24 | Asm International N.V. | Method of growing electrical conductors |
| US6455422B1 (en) * | 2000-11-02 | 2002-09-24 | Advanced Micro Devices, Inc. | Densification process hillock suppression method in integrated circuits |
| JP5135651B2 (ja) | 2001-05-15 | 2013-02-06 | 株式会社アクロラド | 半導体放射線検出素子 |
| JP2005220402A (ja) * | 2004-02-05 | 2005-08-18 | Asahi Kasei Corp | 金属酸化物分散体 |
| JP4407311B2 (ja) * | 2004-02-20 | 2010-02-03 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
| JP2007087735A (ja) * | 2005-09-21 | 2007-04-05 | Asahi Kasei Corp | 金属酸化物分散体 |
| JP2007109905A (ja) * | 2005-10-14 | 2007-04-26 | Hitachi Ltd | 放射線検出器 |
-
2009
- 2009-05-19 GB GBGB0908583.8A patent/GB0908583D0/en not_active Ceased
-
2010
- 2010-05-18 JP JP2012511350A patent/JP5735490B2/ja active Active
- 2010-05-18 WO PCT/GB2010/050804 patent/WO2010133869A1/en not_active Ceased
- 2010-05-18 EP EP10725837.8A patent/EP2433296B1/en active Active
- 2010-05-18 US US13/258,849 patent/US8563434B2/en active Active
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