JP2011211015A5 - - Google Patents

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Publication number
JP2011211015A5
JP2011211015A5 JP2010078239A JP2010078239A JP2011211015A5 JP 2011211015 A5 JP2011211015 A5 JP 2011211015A5 JP 2010078239 A JP2010078239 A JP 2010078239A JP 2010078239 A JP2010078239 A JP 2010078239A JP 2011211015 A5 JP2011211015 A5 JP 2011211015A5
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JP
Japan
Prior art keywords
layer
semiconductor
light emitting
light reflecting
protective layer
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Application number
JP2010078239A
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English (en)
Japanese (ja)
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JP5845557B2 (ja
JP2011211015A (ja
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Priority to JP2010078239A priority Critical patent/JP5845557B2/ja
Priority claimed from JP2010078239A external-priority patent/JP5845557B2/ja
Priority to US13/053,433 priority patent/US20110241047A1/en
Priority to CN201110073883.5A priority patent/CN102208513B/zh
Publication of JP2011211015A publication Critical patent/JP2011211015A/ja
Publication of JP2011211015A5 publication Critical patent/JP2011211015A5/ja
Application granted granted Critical
Publication of JP5845557B2 publication Critical patent/JP5845557B2/ja
Priority to US15/679,459 priority patent/US11335830B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010078239A 2010-03-30 2010-03-30 半導体発光素子の製造方法 Expired - Fee Related JP5845557B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010078239A JP5845557B2 (ja) 2010-03-30 2010-03-30 半導体発光素子の製造方法
US13/053,433 US20110241047A1 (en) 2010-03-30 2011-03-22 Photo-emission semiconductor device and method of manufacturing same
CN201110073883.5A CN102208513B (zh) 2010-03-30 2011-03-23 发光半导体器件及其制造方法
US15/679,459 US11335830B2 (en) 2010-03-30 2017-08-17 Photo-emission semiconductor device and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010078239A JP5845557B2 (ja) 2010-03-30 2010-03-30 半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2011211015A JP2011211015A (ja) 2011-10-20
JP2011211015A5 true JP2011211015A5 (enExample) 2013-04-11
JP5845557B2 JP5845557B2 (ja) 2016-01-20

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ID=44697251

Family Applications (1)

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JP2010078239A Expired - Fee Related JP5845557B2 (ja) 2010-03-30 2010-03-30 半導体発光素子の製造方法

Country Status (3)

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US (2) US20110241047A1 (enExample)
JP (1) JP5845557B2 (enExample)
CN (1) CN102208513B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5845557B2 (ja) 2010-03-30 2016-01-20 ソニー株式会社 半導体発光素子の製造方法
KR101125025B1 (ko) * 2010-07-23 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법
TW201414012A (zh) * 2012-09-26 2014-04-01 Chi Mei Lighting Tech Corp 發光裝置及其製作方法
JP6208051B2 (ja) * 2014-03-06 2017-10-04 大同特殊鋼株式会社 点光源発光ダイオード
CN105226160A (zh) * 2015-09-01 2016-01-06 中国科学院半导体研究所 化学镀银制作氮化镓基发光二极管反射镜金属层的方法
CN106057993B (zh) * 2016-08-18 2019-07-23 厦门市三安光电科技有限公司 一种薄膜垂直发光组件及其制作方法
JP6824501B2 (ja) * 2017-02-08 2021-02-03 ウシオ電機株式会社 半導体発光素子
CN111200046B (zh) * 2020-01-13 2022-06-03 广东省半导体产业技术研究院 Led芯片结构及其制作方法

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US1627900A (en) * 1926-08-23 1927-05-10 Eastman Kodak Co Process of coating aluminum surfaces
JP2003168823A (ja) * 2001-09-18 2003-06-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
TWI243488B (en) * 2003-02-26 2005-11-11 Osram Opto Semiconductors Gmbh Electrical contact-area for optoelectronic semiconductor-chip and its production method
KR100624411B1 (ko) * 2003-08-25 2006-09-18 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US7452803B2 (en) * 2004-08-12 2008-11-18 Megica Corporation Method for fabricating chip structure
EP1804301B1 (en) * 2004-10-19 2017-01-11 Nichia Corporation Semiconductor element
JP4819453B2 (ja) * 2005-09-12 2011-11-24 昭和電工株式会社 窒化ガリウム系半導体発光素子およびその製造方法
US7479663B2 (en) * 2005-09-12 2009-01-20 Showa Denko K.K. Gallium nitride-based semiconductor light emitting device and process for its production
KR100976311B1 (ko) * 2005-09-16 2010-08-16 쇼와 덴코 가부시키가이샤 질화물 반도체 발광장치 제조 방법
JP2007081312A (ja) * 2005-09-16 2007-03-29 Showa Denko Kk 窒化物系半導体発光素子の製造方法
KR100640496B1 (ko) * 2005-11-23 2006-11-01 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP2007157852A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
US7781247B2 (en) * 2006-10-26 2010-08-24 SemiLEDs Optoelectronics Co., Ltd. Method for producing Group III-Group V vertical light-emitting diodes
JP4367531B2 (ja) * 2007-06-06 2009-11-18 ソニー株式会社 発光素子における電極構造の形成方法、及び、積層構造体の形成方法
TWI350563B (en) * 2007-07-10 2011-10-11 Delta Electronics Inc Manufacturing method of light emitting diode apparatus
JP5310371B2 (ja) * 2009-08-10 2013-10-09 ソニー株式会社 半導体発光素子及びその製造方法
JP5845557B2 (ja) 2010-03-30 2016-01-20 ソニー株式会社 半導体発光素子の製造方法
JP5740901B2 (ja) 2010-10-15 2015-07-01 ソニー株式会社 発光装置および表示装置
JP6328497B2 (ja) 2014-06-17 2018-05-23 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子、パッケージ素子、および発光パネル装置

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