JP5830166B2 - オプトエレクトロニクス半導体チップ - Google Patents
オプトエレクトロニクス半導体チップ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 160
- 230000005693 optoelectronics Effects 0.000 title claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 35
- 239000004332 silver Substances 0.000 claims description 35
- 230000005855 radiation Effects 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 33
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 27
- 229910052719 titanium Inorganic materials 0.000 description 27
- 239000010936 titanium Substances 0.000 description 27
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 230000003595 spectral effect Effects 0.000 description 14
- 238000011161 development Methods 0.000 description 10
- 230000018109 developmental process Effects 0.000 description 10
- 238000002310 reflectometry Methods 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum tin oxide Chemical compound 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Description
本特許出願は、独国特許出願第102011102376.7号および独国特許出願第102011109942.9号の優先権を主張し、これらの文書の開示内容は参照によって本明細書に組み込まれている。
Claims (11)
- 半導体材料の半導体ボディ(1)と、p側コンタクト層(21a)と、n側コンタクト層(2)とを備えているオプトエレクトロニクス半導体チップ(10)であって、
− 前記半導体ボディ(1)が、放射を生成するための活性層(1a)を備えており、
− 前記半導体ボディがp側(1c)およびn側(1b)を備えており、前記p側(1c)と前記n側(1b)の間に前記活性層(1a)が配置されており、
− 前記p側コンタクト層(21a)が、前記半導体ボディ(1)の前記p側(1c)との電気的接触を形成するためのものであり、
− 前記n側コンタクト層(2)が、前記半導体ボディ(1)の前記n側(1b)との電気的接触を形成するためのものであり、
− 前記n側コンタクト層(2)がTCO層(2a)およびミラー層(2b)を含んでおり、前記TCO層(2a)が前記半導体ボディ(1)の前記n側(1b)と前記ミラー層(2b)との間に配置されており、
前記ミラー層(2b)が銀を含んでおり、
前記n側コンタクト層(2)が孔(22)によって前記p側(1c)を貫いて前記半導体ボディ(1)の前記n側(1b)に達しており、
前記TCO層(2a)が前記孔(22)において前記半導体ボディ(1)の前記n側(1b)と前記ミラー層(2b)との間に配置されている、
オプトエレクトロニクス半導体チップ。 - 前記n側コンタクト層が複数の孔によって前記p側を貫いて前記半導体ボディの前記n側に達しており、
前記TCO層が前記複数の孔において前記半導体ボディの前記n側と前記ミラー層との間に配置されている、
請求項1に記載のオプトエレクトロニクス半導体チップ。 - 前記p側コンタクト層(21a)および前記n側コンタクト層(2)が、前記半導体ボディ(1)の同じ側に配置されている、
請求項1または請求項2に記載のオプトエレクトロニクス半導体チップ。 - − 前記p側コンタクト層(21a)が、前記半導体ボディ(1)の前記p側(1c)に直接隣接しており、
− 前記n側コンタクト層(2)が、前記半導体ボディ(1)とは反対の前記p側コンタクト層(21a)の側に配置されており、
− 前記p側コンタクト層(21a)と前記n側コンタクト層(2)との間に電気的絶縁層(3)が配置されている、
請求項3に記載のオプトエレクトロニクス半導体チップ。 - − 前記ミラー層(2b)が前記孔(22)の中に延在している、
請求項1から請求項4のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記TCO層(2a)がZnOまたはITOを含んでいる、
請求項1から請求項5のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記TCO層(2a)が0.5nmより大きい厚さを示す、
請求項1から請求項6のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記TCO層(2a)が、15nm〜25nmの範囲内(両端値を含む)の厚さを示す、
請求項7に記載のオプトエレクトロニクス半導体チップ。 - 前記半導体ボディ(1)が傾斜側面(11)を備えている、
請求項1から請求項8のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記半導体ボディ(1)がGaN系である、
請求項1から請求項9のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記ミラー層(2b)は、前記半導体材料に直接には接触しない、
請求項1から請求項10のいずれかに記載のオプトエレクトロニクス半導体チップ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011102376.7 | 2011-05-25 | ||
DE201110102376 DE102011102376A1 (de) | 2011-05-25 | 2011-05-25 | Optoelektronischer Halbleiterchip |
DE201110109942 DE102011109942A1 (de) | 2011-08-10 | 2011-08-10 | Optoelektronischer Halbleiterchip |
DE102011109942.9 | 2011-08-10 | ||
PCT/DE2012/100118 WO2012159615A2 (de) | 2011-05-25 | 2012-04-26 | Optoelektronischer halbleiterchip |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014515555A JP2014515555A (ja) | 2014-06-30 |
JP5830166B2 true JP5830166B2 (ja) | 2015-12-09 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014511739A Active JP5830166B2 (ja) | 2011-05-25 | 2012-04-26 | オプトエレクトロニクス半導体チップ |
Country Status (7)
Country | Link |
---|---|
US (4) | US9373765B2 (ja) |
EP (1) | EP2715809B1 (ja) |
JP (1) | JP5830166B2 (ja) |
KR (2) | KR101860973B1 (ja) |
CN (2) | CN106252482B (ja) |
TW (1) | TWI601312B (ja) |
WO (1) | WO2012159615A2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008051048A1 (de) * | 2008-10-09 | 2010-04-15 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper |
KR101827975B1 (ko) | 2011-10-10 | 2018-03-29 | 엘지이노텍 주식회사 | 발광소자 |
KR20160037060A (ko) * | 2014-09-26 | 2016-04-05 | 서울바이오시스 주식회사 | 발광소자 및 그 제조 방법 |
WO2016099061A1 (en) * | 2014-12-19 | 2016-06-23 | Seoul Viosys Co., Ltd. | Semiconductor light emitting device and method of manufacturing the same |
JP6624930B2 (ja) * | 2015-12-26 | 2019-12-25 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
DE102016101612A1 (de) * | 2016-01-29 | 2017-08-03 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
US12015103B2 (en) * | 2017-01-10 | 2024-06-18 | PlayNitride Display Co., Ltd. | Micro light emitting diode display panel with option of choosing to emit light both or respectively of light-emitting regions |
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TWI646680B (zh) * | 2017-01-10 | 2019-01-01 | 英屬開曼群島商錼創科技股份有限公司 | 微型發光二極體晶片以及顯示面板 |
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WO2012159615A3 (de) | 2013-05-23 |
KR20140029490A (ko) | 2014-03-10 |
EP2715809A2 (de) | 2014-04-09 |
US9741902B2 (en) | 2017-08-22 |
US20160260870A1 (en) | 2016-09-08 |
CN103563104A (zh) | 2014-02-05 |
KR20180055922A (ko) | 2018-05-25 |
TWI601312B (zh) | 2017-10-01 |
US20170317240A1 (en) | 2017-11-02 |
CN106252482B (zh) | 2019-08-23 |
US9373765B2 (en) | 2016-06-21 |
JP2014515555A (ja) | 2014-06-30 |
CN106252482A (zh) | 2016-12-21 |
EP2715809B1 (de) | 2019-06-05 |
CN103563104B (zh) | 2016-08-31 |
US20140197435A1 (en) | 2014-07-17 |
WO2012159615A2 (de) | 2012-11-29 |
US10115867B2 (en) | 2018-10-30 |
KR101860973B1 (ko) | 2018-05-24 |
US20190044031A1 (en) | 2019-02-07 |
TW201251120A (en) | 2012-12-16 |
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